CN101060090A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN101060090A
CN101060090A CNA2007100961155A CN200710096115A CN101060090A CN 101060090 A CN101060090 A CN 101060090A CN A2007100961155 A CNA2007100961155 A CN A2007100961155A CN 200710096115 A CN200710096115 A CN 200710096115A CN 101060090 A CN101060090 A CN 101060090A
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Prior art keywords
semiconductor device
conductive bumps
manufacture method
external cable
electrode
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CN101060090B (zh
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田中壮和
高桥康平
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NEC Electronics Corp
NEC Corp
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NEC Corp
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Abstract

一种半导体装置的制造方法，包括：在半导体器件上形成电极；在所述电极上形成导电凸起；把外部电线放置在所述导电凸起上；以及对所述外部电线和所述导电凸起进行激光焊接以建立电气连接。

Description

半导体装置的制造方法
技术领域
本发明涉及一种半导体装置的制造方法，具体涉及一种针对大电流或低电阻用途的半导体装置的制造方法。
背景技术
金属氧化物半导体场效应晶体管(MOSFET)用于消费电子产品-例如蜂窝电话、个人计算机和数字视听设备-中的电源，或者用于驱动承载大约1至200A的大电流的车辆电动机。因此，MOSFET需要具有大截面面积的厚外部电线。因此，为了吸取较大电流，已连接多个大约100至500μm的大规格连接线，作为MOSFET源电极的外部电线。
然而，这些连接线典型地通过超声键合或热压缩键合与源电极相连，而且要求键合面积为电线截面面积的大约1.5至3倍。然而，源电极或栅电极的面积被限制得较小，从而限制了电线截面面积的扩大。此外，更大的电线截面面积需要施加更高的压力以获得更大的键合强度，而且机械碰撞会对半导体器件造成损害。此外，大规格连接线的环形化(looping)导致了生产率的降低。
为了解决这些问题，日本未审专利申请公布No.2002-313851(Oono等)和No.2002-314018(Funato等)中描述了一种半导体装置及其制造方法，它使用平板电气路径构件取代连接线作为外部电线，以扩大外部电线的截面面积。图6A和6B分别为Oono所讲授的半导体器件(小轮廓封装(SOP)-8封装)的水平截面图和垂直截面图。
在图6A和6B的半导体装置101中，成型树脂102中包括有半导体器件105。在半导体器件105上，源电极104s和栅电极104g形成于上表面上，而漏电极(未示出)形成于下表面上。
8个引线之中的4个漏侧端子103d被集成到一个组中，以形成成型树脂102内的漏侧端子107d。半导体器件105被放置在漏侧端子107d之上，从而漏侧端子107d与漏电极(未示出)电气相连。在余下的4个引线之中，3个源侧端子103a被集成到一个组中，以形成成型树脂102内的源侧端子107s，而且一个栅侧端子103g形成了成型树脂102内的栅侧端子107g。
电气路径构件106把源侧端子107s与源电极104s电气相连。通过超声键合，以彼此直接接触的方式分别把在电气路径构件106的一端形成的电极侧连接部分106a与源电极104s相连，并把在电气路径构件106的另一端形成的引线侧连接部分106b与源侧端子107s相连。使用平板电气路径构件106允许流过源侧端子107s与源电极104s之间的电流路径的截面面积明显大于流过多个连接电线的电流路径的截面面积。一个连接电线108把栅侧端子107g与栅电极104g电气相连。
作为不会对半导体器件造成机械损害的一种键合技术，使用激光的电线键合是已知的。图7是示出了根据日本未审专利申请公布No.61-53737(图2)(Matsuda等)的半导体装置的截面图。半导体器件201放置在引线框的管芯垫203上。焊接电线205把放置在半导体器件201上的电极焊盘202与引线框的引线204电气相连。通过激光焊接把电线205与电极焊盘202相连。
然而，Oono等和Funato等讲授的超声键合工艺会因为超声振动而对半导体器件造成机械损害。此外，由于它是一种机械键合工艺，所以这种键合对于一些金属来说是困难的。
特别地，把半导体器件安装在引线框的管芯垫(岛)上这个步骤是在300℃或更高的温度下执行的；结果，在半导体器件的电极表面上形成了氧化物薄膜。为了在低温提供外部电线与电极之间的机械键合，需要破坏电极表面上的氧化物薄膜以暴露出新的表面。这样，超声振动被施加到彼此接触布置的外部电线和电极。然而，如果外部电线具有大截面面积，那么由于外部电线的振动而施加到电极的机械撞击变得较大，这将会使机械损害到达电极下方的半导体器件。具体地，MOSFET具有紧邻电极之下的有源单元，制成品将损坏。此外，所述键合难以用于具有厚表面氧化物薄膜的Cu等。
另一方面，Matsuda等讲授的激光键合工艺会对电极之下的半导体器件造成热损害。如上所述，大约100至500μm或更高的大规格电线用于减小电阻，以使MOSFET承载大电流。这与100至500μm的厚度相对应。另一方面，如Oono等所述，电极的厚度小至大约2至6μm。当对具有明显不同厚度的构件进行激光焊接时，激光强度的调整是极其困难的，这是因为高激光强度致使激光对半导体器件造成热损害，而低激光强度不能建立连接或获得期望的连接强度。
发明内容
根据本发明的一方面，提供了一种半导体装置的制造方法，包括：在半导体器件上形成电极；在所述电极上形成导电凸起；把外部电线放置在所述导电凸起上；以及对所述外部电线和所述导电凸起进行激光焊接以建立电气连接。
本发明提供了一种半导体装置的制造方法，能够防止对半导体器件的机械损害和热损害，并且提供了高可靠性和生产率。
附图说明
根据下文结合附图的描述，本发明的上述和其它目的、优点和特征将会更加明显，其中：
图1A是示出了根据本发明第一实施例的半导体装置的透视图；
图1B是沿着图1A中线X-X的截面图；
图2A是示出了根据本发明第一实施例的半导体装置制造方法的透视图；
图2B是沿着图2A中线X-X的截面图；
图3A是示出了根据本发明第二实施例的半导体装置的透视图；
图3B是沿着图3A中线X-X的截面图；
图4是示出了根据本发明第二实施例的、包括两个半导体器件的半导体装置的截面图；
图5A是示出了根据本发明第三实施例的半导体装置的平面图；
图5B是沿着图5A中线X-X的截面图；
图6A是示出了根据日本未审专利申请公布No.2002-313851的半导体装置的平面图；
图6B是图6A的截面图；以及
图7是示出了根据日本未审专利申请公布No.61-53737的半导体装置的截面图。
具体实施方式
这里参考示意性实施例对本发明进行描述。本领域的技术人员将认识到，使用本发明的教义可以实现许多替代的实施例，从而本发明不限于为了解释的目的而示出的实施例。
第一实施例
下文描述本发明的示范实施例。然而，本发明不限于下文所述的实施例。为了清楚地进行描述，对下文的描述和附图进行适当的简化。
下文参考附图对本发明的第一实施例进行详细描述。在第一实施例中，本发明应用于针对大电流或低电阻用途的半导体装置，其中把多个MOSFET结合成一个MOSFET。虽然单个晶体管通常承载大约0.1A的电流，然而这种晶体管能够承载大约1至200A的电流，而且能够用于消费电子产品中的电源、驱动车辆电动机等。
图1A是根据本发明第一实施例的半导体装置的透视图。图1B是沿着图1A中线X-X的截面图。如图1A和1B所示，半导体装置包括引线框的管芯垫(岛)1、半导体器件(管芯)2、电极焊盘3、导电凸起4和引线框的引线5。典型地，这些元件被环氧树脂等制成的成型树脂覆盖，并且除了引线5的一端(外部引线)之外被完全封装。
管芯垫1是引线框的一部分。引线框由主要包含Au、Cu、Ni、Ag、Al或Pd的金属制成。可以在管芯垫1的表面上形成金属材料。换句话说，如果需要，管芯垫1可以被镀上Ni、Ag等。
半导体器件(管芯)2(可以是垂直MOSFET)被放置在管芯垫1上。漏电极(未示出)被放置在半导体器件2的下表面上，并与管芯垫1相连。
如图1A所示，电极焊盘3被放置在半导体器件3上并包括源电极3a和栅电极3b。电极焊盘3可以是具有厚度为大约5μm的金属薄膜，所述金属薄膜主要包含Au、Cu、Ni、Ag、Al或Pd。
导电凸起4被放置在电极焊盘3上，并与电极焊盘3电气相连。导电凸起4由Au、Cu、Ni、Ag、Al、Pd或主要包含这些金属的合金而制成。还可以使用各种焊料。根据连接部分5a的厚度而适当地设置导电凸起4的高度。
特别地，把连接部分5a的厚度设置为导电凸起4的高度的1至30倍，以防止由于激光焊接而对半导体器件2造成热损害，并获得适合的键合强度。大于30倍将会使激光强度的调整变得极其困难。如果激光强度过高，那么激光到达电极焊盘3，甚至导电凸起4之下的半导体器件2，从而对半导体器件2造成了热损害。另一方面，如果激光强度过低，则不能建立连接或不能获得期望的连接强度。小于1倍不会对激光焊接造成任何问题；然而，如果连接部分5a的厚度过小，那么电阻的增大会导致针对大电流或低电阻用途的电气特性发生退化。把导电凸起4的高度设置为大约5μm或更大，以防止由于激光焊接而将热损害施加到半导体器件2。尽管连接部分5a的厚度取决于截面面积和电阻，该厚度应当至少为5μm。如果导电凸起4的高度更大，则连接部分5a的厚度可能小于导电凸起4的高度的1倍。然而，当小于1倍时电阻低。更为优选地，连接部分5a的厚度是导电凸起4的高度的1至10倍。
引线5是可能与管芯垫1相同或不同的引线框的一部分，并且根据本发明与外部电线相对应。引线5的一端(内部引线)被放置在导电凸起4上。如图1A所示，根据第一实施例的内部引线具有平板连接部分5a。连接部分5a和导电凸起4被激光焊接且彼此电气相连。可以根据期望的电流和电阻值来设计连接部分5a与导电凸起4之间的接触面积。引线5和导电凸起4不通过单独的电线等而直接连接。这消除了额外的连接部分，从而提供了更为可靠的半导体装置。引线5的另一端(外部引线)暴露在封装之外，并且典型地被焊接到印刷电路板上。可选择地，引线5的另一端可以和放置在另一个半导体器件的电极焊盘上的导电凸起激光焊接，从而通过引线5把两个半导体器件相连。
连接部分5a的面积可以大于电极焊盘3的面积，但是应当小于半导体器件2。这是因为激光焊接的定位是通过对半导体器件2的识别而执行的。这便于进行定位。
在MOSFET的典型结构中，栅电极放置在源电极之下，其间插入有绝缘薄膜。所述绝缘薄膜可以由BPSG(硼磷硅酸盐玻璃)、PSG(磷硅酸盐玻璃)等(即，添加磷或硼的氧化物硅玻璃)形成。如果激光焊接对绝缘薄膜造成了损害，那么MOSFET变得不可操作。因此，绝缘薄膜优选地由耐热材料形成。
下文描述根据本发明第一实施例的半导体装置的制造方法。准备引线框，该引线框具有引线5末端处的平板连接部分5a。可以通过冲压、蚀刻等在薄板金属材料上形成图案而形成引线框。连接部分5a形成于引线框的引线5末端，从而连接部分5a具有根据半导体器件2上的源电极3a和栅电极3b的尺寸和形状而给定的厚度。
如果需要，可以为连接部分5a镀上Ni、Ag等。特别地，Cu和Cu合金具有高导电性，因而适于作为引线框材料，但对激光的吸收不够。为了便于进行激光焊接，可以把具有高激光吸收率的Ni镀在表面上，或使用通过轧压Cu板上Ni板的叠层而获得的Cu-Ni覆层材料。还可以使用Cu-Ni合金。
这样，从半导体晶片中切出的每一个半导体器件2都放置在管芯垫1上，而且通过超声键合在电极焊盘3上形成导电凸起4。具体地，对用于导电凸起4的线状材料的末端进行加热使之融化以形成球状物，进行超声键合，然后进行切割，从而产生导电凸起4。每一个导电凸起4的尺寸可以具有大约30至200μm的直径，并具有大约25至90μm的高度，小于连接部分5a和根据Oono等和Funato等的平板电流路径构件，从而该步骤的超声键合不会对半导体器件2造成任何机械损害。焊料、银涂胶等可以把管芯垫1和半导体器件2电气相连。
用于产生导电凸起4的方法不限于上述超声键合。例如，可以通过在半导体晶片上进行电解电镀或无电镀来产生导电凸起4。形成具有约5至20μm厚度的导电凸起4是容易的。导电凸起4不限于球状，还可以是圆柱状或插头状。这个方法能够在同一时间在每一个半导体器件上产生导电凸起4，而且还能够减小由于超声键合而引起的机械损害。可以把导电凸起4的尺寸扩大为100μm或更大，这增大了激光焊接的面积，从而进一步减小了电阻。
之后，在源电极3a和栅电极3b上形成的导电凸起4与引线5的连接部分5a重叠。如稍早所述，引线5可以是与管芯垫1不同的引线框的引线。可以按照大约100μm的精度执行半导体器件2的定位用于激光焊接，这种定位是简单的。另一方面，为了按照Oono等所述而进行平板外部电线的超声键合，必须在平板外部电线的连接部分与半导体器件的电极紧密接触时，振动该连接部分。因而，必须执行所述定位，从而平板外部电线的连接部分不会从保护膜的开口伸出，在该开口处暴露半导体器件的电极。通常，半导体器件被具有开口的保护膜覆盖，所述开口用于暴露半导体器件的电极。通过机械操作来布置外部电线，目前定位精度大约为±25μm。为了减小所需的定位精度，必须扩大平板电气路径构件的连接部分与用于暴露半导体器件的电极的开口之间的空余距离(margin)。这需要增大半导体器件的尺寸或减小连接部分的尺寸(以增大电阻)。另一方面，在本发明中，导电凸起4被夹在引线5的连接部分5a与保护膜之间，以防止连接部分5a与保护膜之间发生接触。因此，可以偏离开口以暴露半导体器件的电极，而且允许大约为±100μm的位移。
这样，如图2A和2B所示，从引线5的顶部施加激光以部分地熔化引线5的连接部分5a和导电凸起4，从而对金属进行焊接。对于激光焊接，使用检流计能够实现一次连接，从而提高了生产率。即使连接部分5a与导电凸起4之间存在微小的间隙，连接部分5a和导电凸起4被激光焊接所熔化，从而键合在一起。尽管在图2A和2B中对所有的导电凸起4进行激光焊接，然而对所有的导电凸起4执行激光焊接不是必需的。
最后，通过成型树脂把引线5除了外部引线之外的部分密封起来，以便进行封装。
如上所述，根据本发明第一实施例的半导体装置的制造方法对连接部分5a和导电凸起4执行激光焊接，从而防止对半导体器件2造成机械损害。此外，通过使用导电凸起4，通过基于连接部分5a的厚度来调整导电凸起4的高度，可以避免对半导体器件2造成热损害。从而可以提供具有高可靠性和高生产率的半导体装置。
根据第一实施例的半导体装置的制造方法还具有如下优点。由于通过激光焊接而对引线5的连接部分5a和导电凸起4进行熔化和连接，所以可以对在其表面上具有厚氧化物膜从而难以通过超声键合而键合的金属进行键合。此外，由于这是其中仅在焊接部分产生热量的室温处理，所以可以防止引线框或半导体器件2的电极焊盘被氧化。此外，由于简单的定位、可以获得一次连接以及不需要电线环形化，所以生产率较高。
第二实施例
下文描述本发明的第二实施例。尽管在第一实施例中引线5和电极焊盘3上形成的导电凸起4是直接相连的，然而引线5和导电凸起4可以通过单独的连接构件相连。在第二实施例中，带状连接构件17用于引线框的引线5与导电凸起4之间的连接。因此，根据本发明，带状连接构件17与外部电线相对应。
图3A是根据本发明第二实施例的半导体装置的透视图，而图3B是沿着图3A中线X-X的截面图。在下文描述中，与第一实施例中相同的元件由相同的附图标记来表示，并且这里不会进行详细描述。
如图3A和3B所示，带状连接构件17的一端与引线5电气相连，而带状连接构件17的另一端还与导电凸起4电气相连。带状连接构件17由Au、Cu、Ni、Ag、Al、Pd或主要包含这些金属的合金而制成。通过激光焊接而形成带状连接构件17与导电凸起4和与引线5的连接。如图4所示，带状连接构件17的一端可以通过激光焊接与导电凸起14相连而不是与引线5相连，其中导电凸起14形成在和半导体器件2不同的另一个半导体器件12的电极焊盘13上，从而两个半导体器件通过带状连接构件17而连接。尽管在图4中半导体器件2和半导体器件12分别安装在管芯垫1和管芯垫11上，然而它们可以安装在同一个管芯垫上。
优选地，带状连接构件17的厚度是导电凸起4的高度的1至30倍，其原因与第一实施例中相同。对引线5的厚度没有具体限制。由于引线5的厚度通常大于带状连接构件17的厚度，所以能够执行稳定的激光焊接。
根据本发明第二实施例的半导体装置的制造方法对带状连接构件17和导电凸起4执行激光焊接，从而防止对半导体器件2造成机械损害。此外，通过使用导电凸起4，能够通过基于带状连接构件17的厚度来调整导电凸起4的高度而避免对半导体器件2造成热损害。从而可以提供具有高可靠性和高生产率的半导体装置。
第三实施例
下文描述本发明的第三实施例。第三实施例使用电线27在引线框的引线5与导电凸起4之间进行连接。因此，根据本发明，电线27与外部电线相对应。图5A是根据本发明第三实施例的半导体装置的平面图，而图5B是沿着图5A中线X-X的截面图。在下文描述中，与第一实施例中相同的元件由相同的附图标记来表示，并且这里不会进行详细描述。
如图5A和5B所示，形成于电线27一端的连接部分27b与引线5电气相连，而形成于电线27另一端的连接部分27a还与导电凸起4电气相连。电线27由Au、Cu、Ni、Ag、Al、Pd或主要包含这些金属的合金而制成。尽管电线27通常具有圆形截面，为了容易地对引线5和导电凸起4进行激光焊接，图5的示例中的电线27两端(连接部分27a和27b)具有平板形状。可以使用激光焊接把电线27的连接部分27b与另一个半导体器件的电极焊盘上形成的导电凸起相连，而不是与引线5相连，从而两个半导体器件通过电线27相连。
优选地，电线27的平板状连接部分27a的厚度是导电凸起4的高度的1至30倍，其原因与第一实施例中相同。为了更加容易地进行激光焊接，与引线框14焊接到一起的连接部分27b优选地也具有平板形状。
根据第三实施例的半导体装置的制造方法对连接部分27a和导电凸起4执行激光焊接，从而防止对半导体器件2造成机械损害。此外，通过使用导电凸起4，能够通过基于连接部分27a的厚度来调整导电凸起4的高度而避免对半导体器件2造成热损害。从而能够提供具有高可靠性和高生产率的半导体装置。
明显的是，本发明不限于上述实施例，在不背离本发明的范围和精神的前提下，可以对上述实施例进行修改和改变。

Claims (17)

1.一种半导体装置的制造方法，包括：
在半导体器件(2、12)上形成电极(3a、3b)；
在所述电极上形成导电凸起(4、14)；
把外部电线(5a、17、27a)放置在所述导电凸起上；以及
对所述外部电线和所述导电凸起进行激光焊接，以建立电气连接。
2.根据权利要求1所述的半导体装置的制造方法，其中
所述激光焊接从与所述外部电线接触所述导电凸起的表面相对的一侧施加激光(10)。
3.根据权利要求1或2所述的半导体装置的制造方法，其中
所述半导体装置用于1至200A的电流。
4.根据权利要求1或2所述的半导体装置的制造方法，其中
所述外部电线的厚度是所述导电凸起的高度的1至30倍。
5.根据权利要求1或2所述的半导体装置的制造方法，其中
基于所述外部电线的厚度而确定所述导电凸起的高度。
6.根据权利要求1或2所述的半导体装置的制造方法，其中
所述外部电线是引线框的引线。
7.根据权利要求6所述的半导体装置的制造方法，其中
所述半导体器件被放置在所述引线框的管芯垫(1)上。
8.根据权利要求6所述的半导体装置的制造方法，其中
所述半导体器件被放置在与所述引线框不同的引线框的管芯垫上。
9.根据权利要求1或2所述的半导体装置的制造方法，其中
所述半导体器件被放置在引线框的管芯垫上，而且
通过激光焊接把所述外部电线的一端与所述导电凸起相连，并且通过激光焊接把所述外部电线的另一端与所述引线框的引线相连。
10.根据权利要求1或2所述的半导体装置的制造方法，其中
所述半导体器件包括第一半导体器件(2)和第二半导体器件(12)，而且
通过激光焊接把所述外部电线的一端与所述第一半导体器件的所述导电凸起相连，并且通过激光焊接把所述外部电线的另一端与所述第二半导体器件的所述导电凸起相连。
11.根据权利要求1或2所述的半导体装置的制造方法，其中
所述半导体器件是金属氧化物半导体场效应晶体管。
12.根据权利要求1或2所述的半导体装置的制造方法，其中
所述激光焊接把激光施加到所述外部电线的多个位置。
13.根据权利要求1或2所述的半导体装置的制造方法，其中
所述导电凸起由包含Au、Cu、Ni、Ag、Al、Pd、Sn和Pb中至少一项的金属制成。
14.根据权利要求1或2所述的半导体装置的制造方法，其中
所述电极由包含Au、Cu、Ni、Ag、Al和Pd中至少一项的金属制成。
15.根据权利要求1或2所述的半导体装置的制造方法，其中
所述外部电线由包含Au、Cu、Ni、Ag、Al和Pd中至少一项的金属制成。
16.根据权利要求15所述的半导体装置的制造方法，其中
所述外部电线由表面镀有Ni的Cu或Cu合金制成。
17.根据权利要求15所述的半导体装置的制造方法，其中
所述电极和所述外部电线都由包含Au、Cu、Ni、Ag、Al和Pd中至少一项的金属制成。
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