CN103035542A - 用于生产功率半导体设置的方法 - Google Patents

用于生产功率半导体设置的方法 Download PDF

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Publication number
CN103035542A
CN103035542A CN2012103682287A CN201210368228A CN103035542A CN 103035542 A CN103035542 A CN 103035542A CN 2012103682287 A CN2012103682287 A CN 2012103682287A CN 201210368228 A CN201210368228 A CN 201210368228A CN 103035542 A CN103035542 A CN 103035542A
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Prior art keywords
metallization layer
top metallization
contact pin
welding
contact
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CN2012103682287A
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CN103035542B (zh
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K.古特
T.施托尔策
G.施特罗特曼
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

在用于生产功率半导体设置的方法中，提供具有顶侧的电介质绝缘载体和在所述顶侧上设置的顶部金属化层。还提供半导体芯片以及至少一个导电接触引脚，每一个引脚具有第一末端和相对的第二末端。所述半导体芯片被烧结或扩散焊接到顶部金属化层。在第一末端与顶部金属化层之间形成导电连接，其中接触引脚的导电连接材料与顶部金属化层的材料直接物理接触。

Description

用于生产功率半导体设置的方法
技术领域
本发明涉及一种用于生产功率半导体设置的方法。
背景技术
在许多功率半导体设置中，所述设置的内部和外部电连接是使用导电接触引脚实现的。然而，将这样的接触引脚电连接到所述设置的电路载体非常麻烦，并且常常需要人工工作。在生产功率半导体模块包装中，包装成本是商业成功的关键因素。从所述模块内部到模块外部的PCB（印刷电路板）的互连在该成本方面起到重要作用。因此，例如在US 6,483,128 B2中描述的“引脚铆接（pin-rivet）”工艺当前对于这样的包装是非常重要的，其允许按照自动化方式将引脚放置在基板上的任何位置。在传统的生产工艺中，至少一个半导体芯片和至少一个铆钉被拾取和放置到焊膏上，所述焊膏被施加到基板的金属化上。随后，在常见的焊接步骤中将所述至少一个半导体芯片和至少一个铆钉焊接到所述金属化，其中焊料首先被熔融并且随后被冷却到其熔点以下。随后将引脚插入到焊接的铆钉中。然而，诸如烧结或扩散焊接之类的新的连接技术对于将半导体芯片结合到基板的金属化是有价值的，但是对于将铆钉结合到基板的金属化则不具有吸引力，这是因为铆钉可能由于烧结所需的高压而被压坏并且因为扩散焊接通常是无糊膏工艺。为了继续已知的铆钉将需要在芯片组装之后选择性地配发焊膏以及第二焊料-熔炉（solder-furnace）步骤，这被认为变得过于昂贵。因此需要一种用于生产功率半导体设置的改进方法。
发明内容
根据用于生产功率半导体设置的方法的一个实施例，提供具有平面顶侧的电介质绝缘载体以及在所述平面顶侧上设置的顶侧金属化层。还提供至少一个半导体芯片以及每个包括第一末端和相对的第二末端的多个即N≥1个导电接触引脚。
所述半导体芯片和顶部金属化层通过设置在半导体芯片与顶部金属化层之间的连接层而结合，其中所述连接层通过扩散焊接或通过烧结而产生。对于每一个接触引脚，在所述接触引脚的第一末端与顶部金属化层之间形成导电连接，其中接触引脚的导电连接材料与金属化层的材料直接物理接触。
根据用于生产功率半导体设置的方法的另一个实施例，随后把多个接触引脚连接到电路载体的顶部金属化。该方法包括：
（a）提供半导体芯片；
（b）通过设置在半导体芯片与顶部金属化层之间的连接层将半导体芯片与顶部金属化层结合，其中所述连接层是通过扩散焊接或通过烧结产生的；
（c）提供具有顶侧的电介质绝缘载体和在所述顶侧上设置的顶部金属化层；
（d）提供接触引脚储备库（reservoir），所述接触引脚储备库能够提供多个接触引脚，每一个接触引脚具有第一末端和相对的第二末端；以及
（e）对于接触引脚储备库的多个接触引脚当中的每一个，在顶部金属化层与对应的接触引脚的第一末端之间形成导电连接，其中所述接触引脚的导电连接材料与顶部金属化层的材料直接物理接触。
在根据本发明的方法中，除非另行声明或者除非特定方法步骤要求在该特定方法步骤之前实施另一个方法步骤，否则这些单个方法步骤的顺序是任意的。
在阅读了下面的详细描述后并且在观看了附图后，本领域技术人员将认识到附加的特征和优点。
附图说明
参照下面的附图和描述可以更好地理解本发明。附图中的组件不一定是按比例的，相反重点在于示出本发明的原理。此外在附图中，相同的附图标记指代相应的部件。
图1（A）示出了射束熔接（beam weld）到电路载体的金属化的接触引脚。
图1（B）示出了具有笔直第一末端的接触引脚的侧视图。
图1（C）示出了具有被形成为凸缘的第一末端的接触引脚的侧视图。
图2（A）示出了具有中空轴杆以及射束熔接到电路载体的金属化的第一末端的接触引脚，其中所述射束延伸穿过所述中空轴杆。
图2（B）示出了具有中空轴杆和笔直第一末端的接触引脚。
图2（C）示出了具有中空轴杆及其第一末端处的内部凸缘的接触引脚。
图2（D）示出了具有在第一末端处闭合的中空轴杆的接触引脚。
图2（E）示出了具有中空轴杆的接触引脚，所述中空轴杆具有与第一末端远离间隔的集成引脚孔洞。
图3（A）示出了接触引脚如何被旋转熔接到电路载体的金属化。
图3（B）示出了具有笔直第一末端的接触引脚。
图3（C）示出了具有被形成为凸缘的第一末端的接触引脚。
图3（D）示出了具有中空轴杆和笔直第一末端的接触引脚。
图3（E）示出了具有中空轴杆和被形成为凸缘的第一末端的接触引脚。
图4示出了其中接触引脚被线性和扭转超声摩擦熔接到电路载体的金属化的工艺。
图5示出了其中接触引脚被电阻熔接到电路载体的金属化的工艺。
图6（A）到6（E）示出了其中接触引脚的第一末端被球焊到电路载体的金属化的球焊工艺的不同步骤。
图7（A）示出了具有第一末端和笔直第二末端的接触引脚，第一末端被球焊到电路载体的金属化。
图7（B）示出了具有第一末端、笔直第二末端和中空轴杆的接触引脚。
图7（C）示出了具有球焊到电路载体的金属化的第一末端和分叉的第二末端的接触引脚。
图7（D）示出了具有球焊到电路载体的金属化的第一末端以及被形成为母或公压合连接器的第二末端的接触引脚。
图7（E）示出了具有球焊到电路载体的金属化的第一末端以及被形成为机械补偿元件的轴杆的接触引脚。
图7（F）示出了被形成为具有球焊到电路载体的金属化的第一末端的软线的接触引脚。
图8示出了其中接触引脚被从卷绕的接触引脚线展开或者从储盒中取出的工艺。
图9示出了接触引脚在电路载体的顶部金属化中的最大没入深度。
图10示出了熔接到电路载体的顶部金属化层的多个接触引脚。
图11是图10的设置的顶视图。
图12（A）和12（B）示出了形成半导体芯片与顶部金属化层之间的烧结或扩散焊接的结合的不同步骤。
具体实施方式
在下面的详细描述中参照形成本说明书的一部分的附图，其中通过说明的方式示出了可以实践本发明的特定实施例。在这方面，参照所描述的附图的指向使用了诸如“顶部”、“底部”、“正面”、“背面”、“在前”、“在后”等等方向术语。由于实施例的组件可以被定位在多个不同的指向中，因此所述方向术语被用于说明的目的而绝不是进行限制。要理解的是，在不背离本发明的范围的情况下，可以利用其他实施例并且可以做出结构或逻辑的改变。因此，不要将下面的详细描述视为限制性意义，并且本发明的范围由所附权利要求书限定。要理解的是，除非另行具体声明，否则这里所描述的各个示例性实施例的特征可以彼此组合。
现在参照图1（A），示出了生产功率半导体模块的一个中间步骤，在该步骤中接触引脚3被安放到电路载体2。在一个后续步骤中，电路载体2被安放在模块外罩9中，所述模块外罩9在图1（A）中用虚线方式示出以便表明模块外罩9不一定是在熔接步骤期间安放的。
电路载体2包括：绝缘载体20，具有平面顶侧20t和底侧20b；附着到顶侧20t的平面顶部金属化21以及附着到底侧20t的可选的底部金属化22。顶侧20t的表面法线的方向被称为垂直方向v。顶部金属化21被结构化成包括导电线路和/或导电区域。可选的底部金属化22被形成为连续不中断的金属层。替换地，可选的底部金属化22也可以被结构化成包括导电线路和/或导电区域。
使用连接层4将至少一个功率半导体芯片1安放到顶部金属化21，所述功率半导体芯片1例如是MOSFET（金属氧化物半导体场效应晶体管）、IGBT（绝缘栅双极型晶体管）、JFET（结型场效应晶体管）、半导体闸流管、二极管或者原则上任何其他种类的半导体芯片。例如，连接层4可以是焊料层、扩散焊料层、烧结层、导电或电绝缘粘合剂。连接层4被用来将功率半导体芯片1与顶部金属化21机械结合，并且可选地还可以被用来将功率半导体芯片1电连接到顶部金属化21。
可选地，功率半导体芯片1的顶侧（即背对电路载体2的侧面）可以被电连接。
图1（A）到1（C）还示出接触引脚3具有第一末端31和与第一末端31相对的第二末端32。接触引脚3可以由单件制成，或者替换地由两件或更多件构成。例如，接触引脚3可以由金属制成，例如由铜、铝、基于铜的合金或者基于铝的合金（比如CuSn6、CuFe2P或CuZr）制成。
为了允许接触引脚3充当功率半导体设置的外部电连接器，接触引脚3后来可以从外罩9突出，从而可从外罩9的外部接进第二末端32。然而在图1（A）中，外罩9还没有被附着到电路载体2上，因为这只有在完成将接触引脚3安放在电路载体2上之后才将发生。
为了将第一末端32电连接并且机械连接到顶部金属化21，可以使用射束熔接方法。为此，图1（A）示出了提供熔接射束11的射束源10，所述熔接射束11例如是激光束或电子束。熔接射束11被引导到第一末端31与顶部金属化21之间的边界区域，以便产生第一末端31与顶部金属化21之间的熔接连接。在所述熔接工艺期间，可以用力F将接触引脚3压向顶部金属化21。
如在图1（B）和1（C）中进一步示出的那样，接触引脚3的第一末端31可以被形成为笔直末端或者具有凸缘311。这样的凸缘311用来增大接触引脚3与顶部金属化21之间的接触面积。由于凸缘311，与具有如图1（B）中所示的笔直第一末端31的接触引脚3的第一末端31的周长相比，第一末端31的周长增加。相应地，凸缘311帮助增加熔接连接的机械稳定性。
在图2（A）中示出了用于射束熔接的方法的另一个实施例。在该实施例中，接触引脚3具有中空轴杆30及其第二末端32处的开口35。开口35和中空轴杆30允许熔接射束11进入开口35并且延伸穿过中空轴杆30一直到在该处发生熔接的第一末端31。在该工艺中，熔接射束11的方向可以垂直于顶部金属化21的顶表面。这种熔接方法的优点在于没有四溅的熔渣。
为了允许这样的射束熔接方法，接触引脚3可以具有中空轴杆30和第二末端32处的开口35。图2（B）到2（E）示出了适当地形成的接触引脚3的一些实施例。
图2（B）的接触引脚3是笔直引脚，其分别具有笔直中空轴杆30以及笔直的第一和第二末端31和32。图2（C）的接触引脚3与图2（B）的接触引脚3的不同之处仅仅在于在其第一末端31处第一末端31具有内部凸缘312。由于内部凸缘312，第一末端31除了引脚孔洞36之外被闭合。图2（D）的接触引脚3与图2（B）和2（C）的接触引脚3的不同之处在于第一末端31被完全闭合。
根据图2（E）中示出的另一个实施例，中空轴杆30可以包括引脚孔洞37，其与第一和第二末端31、32都远离间隔并且限定中空轴杆30内部的狭窄通道。由于引脚孔洞37，在引脚孔洞37与第一末端31之间形成射束陷阱。所述射束陷阱把熔接射束11提供的能量保持在所述陷阱内部并且靠近第一末端31，这帮助加快熔接工艺。通过使用与第一末端31远离间隔的引脚孔洞37形成的这样的射束陷阱可以与任何中空接触引脚3相组合地实现，所述中空接触引脚3可以被射束熔接，因为熔接射束11在第二末端32处进入开口35并且延伸穿过中空轴杆30一直到第一末端31。具体来说，这样的射束陷阱可以与图2（B）到2（D）中示出的任何接触引脚3相组合地实现。
在图3（A）中示出了用于在接触引脚3的材料与电路载体2的顶部金属化21的材料之间形成直接物理连接的另一种方法。在该方法中，接触引脚3通过其对应的第一末端31被旋转熔接到顶部金属化21。为此，用力F将对应的接触引脚3通过其第一末端31压在顶部金属化21上，并且同时使其围绕与顶侧20t基本上垂直延伸的轴线旋转。从而生成摩擦热量，由此使接触引脚3和顶部金属化21的材料中的至少一个熔融。在后续的凝固之后，在接触引脚3与顶部金属化21之间存在熔接连接。
旋转熔接可以对于任何刚性接触引脚3发生。在图3（B）到3（E）中示出了适当的接触引脚的一些例子。图3（B）的接触引脚3是无空隙的实心引脚，其具有笔直第一末端31以及可选地具有笔直第二末端32。图3（C）的接触引脚3也是无空隙的实心引脚，其在其第一末端31处具有凸缘311以及可选地具有笔直第二末端32。图3（D）的接触引脚3被形成为笔直管道，其具有笔直中空轴杆30以及笔直第一和第二末端31、32。图3（E）的接触引脚3与图3（D）的接触引脚3的不同之处在于第一末端具有凸缘311。
在图4中示出了用于在接触引脚3的材料与电路载体2的顶部金属化21的材料之间形成直接物理连接的另一种方法。在该方法中，接触引脚3通过其对应的第一末端31被线性或扭转超声熔接到顶部金属化21。
对于在图4中针对左接触引脚3示出的线性超声熔接，用力F将接触引脚3通过其第一末端31压在顶部金属化21上。同时，在与垂直方向v基本上垂直延伸的方向x上在一个超声频率下线性地振动第一末端31。对于在图4中针对右接触引脚3示出的扭转超声熔接，用力F将接触引脚3通过其第一末端31压在顶部金属化21上。同时，围绕基本上垂直于顶侧20t延伸的轴线旋转接触引脚3，其中旋转的方向在一个超声频率下更改。
在线性和扭转超声熔接中都生成摩擦热量，由此使接触引脚3和顶部金属化21的材料中的至少一个熔融。在后续的凝固之后，在接触引脚3与顶部金属化21之间存在熔接连接。线性或扭转超声熔接可以对于任何刚性接触引脚3发生。已经参照图2（B）到2（E）和图3（B）到3（E）解释了适当的接触引脚的一些例子。
根据用于在接触引脚3的材料与电路载体2的顶部金属化21的材料之间形成直接物理连接的另一种方法，可以使用电阻熔接。如图5中所示，提供具有第一电极51和第二电极52的电流源5。第一电极51直接连接到接触引脚3，第二电极52直接连接到顶部金属化21。两个连接都可以在使接触引脚的第一末端31与顶部金属化的与第二电极52相连接的该部分电接触之前或之后建立。一旦在第一电极51与第二电极52之间存在电连接，电流就流过第一末端31与顶部金属化21之间的接触位置。由于对应的接触的电阻和伴随的功率损耗而生成热量，由此使接触引脚3和顶部金属化21的材料中的至少一个熔融。在后续的凝固之后，在接触引脚3与顶部金属化21之间存在熔接连接。电阻熔接可以对于任何导电的接触引脚3发生。已经参照图2（B）到2（E）和图3（B）到3（E）解释了适当的接触引脚的一些例子。然而任何其他导电接触引脚3也是适当的。
图6（A）到6（E）示出了其中接触引脚3的第一末端31被接合到电路载体2的顶部金属化21的球焊工艺的不同步骤。在图6（A）中，利用毛细管6固定具有笔直第一末端31的接触引脚3。随后如图6（B）中所示，经由毛细管6向接触引脚3施加高压电荷，以便熔融引脚3的第一末端31。从而，接触引脚3的第一末端31形成为球体。随后如图6（C）中所示，将第一末端31降低到顶部金属化21，所述顶部金属化21可以可选地被加热到至少125°C的温度。随后，用力F将第一末端31压在顶部金属化21上。同时，如图6（D）中所示，在侧向方向x上对第一末端31施加线性超声振动。热量、压力和超声能量的组合在所述球体与顶部金属化21之间产生熔接。接下来将接触引脚3从毛细管6穿出。
图7（A）到7（F）示出了其第一末端31被球焊到电路载体2的顶部金属化21的不同接触引脚3。在图7（A）中，引脚3的第一末端31是没有空隙的实心梁并且具有笔直第二末端32。图7（B）的接触引脚3也具有笔直第二末端32但是具有中空轴杆30。图7（C）中所示的接触引脚3是没有空隙的实心梁并且具有分叉的第二末端32。图7（D）的接触引脚3具有被形成为母压合连接器（左接触引脚3）或公压合连接器（右接触引脚3）的第二末端32。左侧的母压合连接器3具有用于容纳相应的公连接器的开口38。图7（E）示出了具有笔直第二末端32以及被形成为可以充当伸缩节（expansion bend）的机械补偿元件的轴杆的接触引脚3。最后，图7（F）示出了被形成为软线的接触引脚3。
上面描述的实施例中的接触引脚3被提供为单个接触引脚3。然而，为了使生产工艺自动化，随后可以把多个接触引脚3连接到电路载体2的顶部金属化21，如现在将参照图8解释的那样。在该方法中，提供具有顶侧20t和具有设置在顶侧20t上的顶部金属化21的电介质绝缘载体20。还提供接触引脚储备库12或13，其能够提供多个接触引脚3。
根据图8的右侧示出的接触引脚储备库12的第一实施例，提供配备有多个接触引脚3的储盒12。每一个接触引脚3具有第一末端31和相对的第二末端32。对于接触引脚储盒12的所述多个接触引脚3当中的每一个，在顶部金属化21与对应的接触引脚3的第一末端31之间以这样的方式产生导电连接：接触引脚3的材料与顶部金属化21的材料直接物理接触。为此，可以使用上面参照图1（A）到7描述的一种或更多种连接技术。
根据图8的左侧示出的接触引脚储备库的第二实施例，接触引脚储备库13可以是卷起的连续接触引脚线14，其因此可以按照卷筒的形式来提供。接触引脚线14具有第一末端31。多个接触引脚3的第一末端31与顶部金属化21之间的导电连接可以通过首先形成接触引脚线14的第一末端31与顶部金属化21之间的导电熔接或球焊连接而形成。之前或随后可以使用切割工具15切下一段接触引脚线14，以便获得接触引脚线14的新的第一末端31。随后可以在新的第一末端31与顶部金属化21之间形成导电熔接或球焊连接，以此类推。
图9示出了在完成了接触引脚3的第一末端32与顶部金属化21之间的连接形成之后，接触引脚3可以略微没入在顶部金属化21中。在图9中，t3表明接触引脚3在顶部金属化21中的没入深度。例如，没入深度t3是顶部金属化21的厚度d21与距离d3之间的差，而距离d3是接触引脚3与电介质绝缘载体20的顶侧20t之间的距离，所述没入深度t3可以小于0.1mm。
图10示出了一个半导体模块，其中多个接触引脚3随后被熔接到电路载体2的顶部金属化层21。图11是图10的设置的顶视图。熔接的接触引脚3可选地在不同的侧向方向x、y上可以具有小于或等于0.7mm的重复距离d33。此外，至少一个接触引脚3可以以小于或等于0.7mm的距离d31与半导体芯片1远离间隔。此外，至少一个接触引脚3可以以小于或等于0.7mm的距离d321与顶部金属化层21的侧向边缘21e远离间隔。顶部金属化层21的侧向边缘21e是在垂直于垂直方向v的方向上处于顶部金属化层21的顶侧的边缘。由于所使用的熔接技术，可以将大量的接触引脚3安放到顶部金属化层21。例如，熔接到顶侧金属化层21的接触引脚3的数目可以是至少十个。
图12（A）和（B）示出了形成半导体芯片1与基板2的顶部金属化层21之间的烧结或扩散焊接的结合的不同步骤。根据图12（A），在每一个半导体芯片1与顶部金属化层21之间设置连接材料4’。
如果将要在半导体芯片1与顶部金属化21之间形成扩散焊接结合，则连接材料4’可以是预成型焊料，例如包括锡的焊料，并且顶部金属化层21可以例如是铜层。根据图12（B），将半导体芯片1压在顶部金属化21上，从而使得对应的压力p特别作用在连接材料4’上。为了施加例如至少5巴的所需超压p（=超出周围大气压的差压），可以使用模具41、42。然而，也可以使用用于把半导体芯片1单独压在顶部金属化层21上或者用于把两个或更多半导体芯片1同时或相继压在顶部金属化层21上的任何其他方法。在施加超压p之前、之时或之后，熔融焊料4’。通过这样做，来自顶部金属化层21和/或来自半导体芯片1的金属化的铜扩散到流体焊料4’中并且形成金属间铜-锡相，比如Cu6Sn5和/或Cu3Sn。随后将流体焊料4’冷却到其固态，其中它形成连接层4。由于所述金属间铜-锡相具有至少415°C的熔点，因此半导体芯片1与顶部金属化层21之间的结合是温度稳定的，即使在高温下操作半导体芯片1也是如此。
如果将要在半导体芯片1与顶部金属化21之间形成烧结结合，则连接材料4’可以是含银糊膏。顶部金属化层21和半导体芯片1的面向金属化层21的该侧可以涂覆有贵金属（例如银或金），以便于后续的烧结工艺。
根据图12（B），将半导体芯片1压在顶部金属化21上，从而使得对应的压力p特别作用在连接材料4’上。为了施加例如至少20巴的所需超压p（=超出周围大气压的差压），可以使用模具41、42。然而，也可以使用用于把半导体芯片1单独压在顶部金属化层21上或者用于把两个或更多半导体芯片1同时或相继压在顶部金属化层21上的任何其他方法。在施加超压p之前、之时或之后，将连接材料4’加热到至少220°C的温度。从而，在半导体芯片1与顶部金属化层21之间形成烧结结合。
在本发明的任何实施例中，如参照图12（A）和（B）所描述的那样形成半导体芯片1与顶部金属化层21之间的烧结或扩散焊接的结合可以发生在如前所述的那样形成顶部金属化层21与一个或更多接触引脚3的第一末端31之间的导电连接的步骤之前。
在本发明的任何电路载体2中，顶部金属化21例如可以由铜制成或者包括至少90%（按重量计）铜，或者可以由铝制成或者包括至少90%（按重量计）铝。
与顶部金属化21的材料无关，绝缘载体20可以是陶瓷。例如，绝缘载体20可以包括以下材料当中的一种或者由其构成：氧化铝（Al2O3）；氮化铝（AlN）；氮化硅（Si3N4）。绝缘载体20的厚度d20的范围可以例如从0.2mm到2mm。在一些实施例中，电路载体2可以是直接铜焊基板（DCB基板），或者是直接铝焊基板（DAB基板），或者是活性金属钎焊基板（AMB基板）。
此外，与被用于顶部金属化21和绝缘载体20的材料无关，可以被用在本发明中的任何接触引脚3例如可以由铜制成或者包括至少90%（按重量计）铜，或者可以由铝制成或者包括至少90%（按重量计）铝。
本发明特别允许使用在基板2上的任何任意位置处放置的笔直引脚，也就是沿着基板2的边界以及与所述边界远离间隔放置。半导体模块的两个或更多或所有接触引脚可以具有完全相同的形状。例如，每一个单个接触引脚3可以具有至少50A的安培容量。出于冗余原因和/或为了开关高于50A的电流，可以并联连接两个或更多接触引脚3。这可以通过将两个或更多接触引脚3熔接到顶部金属化层21的相同部分从而该部分电连接到对应的接触引脚3来实现。
在顶部金属化层上所需的小面积以及与用于把接触引脚3放置在基板2上的任何位置（甚至在半导体芯片1之间）的新的组装工艺兼容的结合工艺帮助节省基板2上的布线面积，这是因为可以在第一末端31的上方垂直将输入或输出导出模块外罩6，而第一末端31则被直接熔接到金属化层上的所需位置。因此可以避免形成顶部金属化层21的不必要的导线。具体来说，不需要导体路径从顶部金属化的中心区域朝向基板2的外边缘延伸。
为了方便描述，使用诸如“在下”、“以下”、“下”、“之上”、“上”等等空间相对术语以便解释一个元件相对于第二个元件的定位。这些术语意图包含除了与在附图中描绘的指向不同的指向之外的不同器件指向。此外，诸如“第一”、“第二”等术语也被用来描述各个元件、区段、部分等等，并且也不意图进行限制。相同的术语在整个说明书中指代相同的元件。
这里所使用的术语“具有”、“含有”、“包含”、“包括”等等是开放性术语，其表明所述元件或特征的存在而不排除附加的元件或特征。除非上下文明确地另有所指，否则“一”、“一个”和“所述”意图包括复数以及单数。
鉴于前面的变型和应用范围，应当理解的是，本发明不受前面的描述限制也不受附图限制。相反，本发明仅由所附权利要求书及其法律等效表述限制。

Claims (25)

1.一种用于生产功率半导体设置的方法，包括：
提供具有平面顶侧的电介质绝缘载体和在所述平面顶侧上设置的顶部金属化层；
提供半导体芯片；
通过半导体芯片与顶部金属化层之间的连接层将半导体芯片与顶部金属化层结合，所述连接层是通过扩散焊接或通过烧结而产生的；
提供每个包括第一末端的多个即N≥1个导电接触引脚；以及
对于每一个接触引脚在顶部金属化层与第一末端之间形成导电连接，其中接触引脚的导电连接材料与顶部金属化层的材料直接物理接触。
2.如权利要求1所述的方法，其中所述顶侧金属化具有以下各项之一或二者：
至少100μm的厚度；
小于或等于2mm的厚度。
3.如权利要求1所述的方法，其中一个或更多或所有接触引脚与顶部金属化层之间的导电连接是熔接连接。
4.如权利要求1所述的方法，其中一个或更多或所有接触引脚与顶部金属化层之间的导电连接是通过以下各项之一产生的：
激光或电子束熔接；
电阻熔接；
旋转熔接；
摩擦熔接；
线性或扭转超声熔接；以及
球焊。
5.如权利要求1所述的方法，其中一个或更多或所有接触引脚的第一末端和顶部金属化层被形成为凸缘。
6.如权利要求1所述的方法，其中一个或更多或所有接触引脚包括具有矩形或圆形外周的轴杆。
7.如权利要求1所述的方法，其中一个或更多或所有接触引脚包括实心轴杆。
8.如权利要求1所述的方法，其中一个或更多或所有接触引脚包括中空轴杆。
9.如权利要求8所述的方法，其中：
一个或更多或所有接触引脚在对应的第二末端处包括开口；并且
对应的接触引脚与顶部金属化层之间的熔接连接是通过射束熔接方法产生的，其中熔接射束进入所述开口并且延伸穿过所述中空轴杆一直到第一末端。
10.如权利要求9所述的方法，其中对应的接触引脚的中空轴杆包括与第一和第二末端远离间隔且限定所述中空轴杆内部的狭窄通道的第一引脚孔洞。
11.如权利要求1所述的方法，其中一个或更多或所有接触引脚的第二末端被形成为以下各项之一：
分叉的末端；
机械补偿元件；
笔直末端；以及
公或母压合连接器。
12.如权利要求1所述的方法，其中一个或更多或所有接触引脚与顶部金属化层之间的熔接连接是以下各项中的至少一个：
无焊料；
无粘合剂；以及
无烧结连接层。
13.如权利要求1所述的方法，其中一个或更多或所有接触引脚由铜制成或者包括按重量计至少90%铜，或者由铝制成或者包括按重量计至少90%铝。
14.如权利要求1所述的方法，其中顶侧金属化由铜制成或者包括按重量计至少90%铜，或者由铝制成或者包括按重量计至少90%铝。
15.如权利要求1所述的方法，其中所述绝缘载体由陶瓷材料制成。
16.如权利要求1所述的方法，其中在顶部金属化层与一个或更多或所有接触引脚的第一末端之间形成导电连接之后，顶部金属化的厚度与在对应的接触引脚和顶侧之间的距离之间的差小于0.1mm。
17.如权利要求1所述的方法，其中至少一个接触引脚与半导体芯片之间的距离小于或等于0.7mm。
18.如权利要求1所述的方法，其中至少一个接触引脚与半导体芯片的侧向边缘之间的距离小于或等于0.7mm。
19.如权利要求1所述的方法，其中N≥2并且在第一末端与顶部金属化层之间形成熔接连接。
20.如权利要求19所述的方法，其中至少两个接触引脚以小于或等于0.7mm的重复距离设置。
21.一种用于生产功率半导体设置的方法，其中随后把多个即N≥2或N≥10个接触引脚连接到电路载体的顶部金属化层，所述方法包括：
（a）提供半导体芯片；
（b）通过设置在半导体芯片与顶部金属化层之间的连接层将半导体芯片与顶部金属化层结合，所述连接层是通过扩散焊接或通过烧结而产生的；
（c）提供具有顶侧的电介质绝缘载体和在所述顶侧上设置的顶部金属化层；
（d）提供接触引脚储备库，所述接触引脚储备库能够提供多个接触引脚，每一个接触引脚具有第一末端和相对的第二末端；以及
（e）对于接触引脚储备库的多个接触引脚当中的每一个，在顶部金属化层与对应的接触引脚的第一末端之间形成导电连接，其中接触引脚的导电连接材料与顶部金属化层的材料直接物理接触。
22.如权利要求21所述的方法，其中所述接触引脚储备库是卷筒上的连续接触引脚线，所述接触引脚线具有第一末端，所述方法包括：
（f）在接触引脚线的第一末端与顶部金属化层之间形成导电的熔接或球焊连接；
（g）切下一段接触引脚线以便获得接触引脚线的新的第一末端；以及
（h）重复步骤（f）和（g）至少一次。
23.如权利要求21所述的方法，其中所述接触引脚储备库是具有多个接触引脚的储盒，每个所述接触引脚具有插入的第一末端，所述方法包括随后在第一末端与顶部金属化层之间形成导电的熔接或球焊连接。
24.如权利要求21所述的方法，其中对于所述多个接触引脚当中的每一个，在顶部金属化层与对应的接触引脚的第一末端之间形成导电连接之后，顶部金属化层的厚度与在对应的接触引脚和顶侧之间的距离之间的差小于0.1mm。
25.如权利要求21所述的方法，包括在所述多个接触引脚的第一末端与顶部金属化层之间形成导电连接之前或之后将半导体芯片安放到顶部金属化层上。
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