JP2004207757A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract
【解決手段】半導体装置は、上面、及び当該上面と対向する下面、及び下面に設けられている外部電極を有する基板10と、複数の第1の電極30が設けられていて、複数の第1の電極の一部が導電性ワイヤ39により電気的に接続されて、基板の上面に搭載されている第1の半導体素子16と、複数の第2の電極32が設けられていて、第1の半導体素子の残りの一部の第1の電極に第2の電極が電気的に接続されて、第1の半導体素子上に搭載されている第2の半導体素子18とを具えている。
【選択図】図3
Description
日経エレクトロニクス、1994、2.14号p.59〜
図1を参照して、第1の参考例のBGA型半導体装置の主要構造につき説明する。なお、図1は、第1の参考例のBGA型半導体装置の構造を説明するための切り口断面を示す図である。
次に、図2の(A)、(B)および(C)を参照して、第1の参考例のBGA型半導体装置の製造方法につき説明する。なお、図2の(A)、(B)および(C)は、第1の参考例のBGA型半導体装置の製造方法を説明するための切り口断面を示す図である。
図3を参照して、この発明のBGA型半導体装置につき説明する。なお、図3は、この発明のBGA型半導体装置の主要構造を説明するための切り口断面を示す図である。
次に、図4および図5を参照して、この発明の第2の参考例のBGA型半導体装置の主要構造につき説明する。なお、図4は、第2の参考例のBGA型半導体装置の主要構造を説明するための斜視図であり、図5は、図4のX−X線に沿って切断した位置での切り口断面を示す図である。なお、図4は、図を明瞭にするため装置の内部構成を透過して示す。
次に、図6、図7および図8を参照して、第2の参考例のBGA型半導体装置の製造方法につき説明する。図6の(A)および(B)、図7の(A)および(B)並びに図8の(A)および(B)は、第2の参考例のBGA型半導体装置の製造方法を説明するための工程図である。
12:絶縁板
14:配線
15:スルーホール部
16:第1半導体素子
17:溝
18:第2半導体素子
20:第1金属バンプ
22:第2金属バンプ
24:ソルダーレジスト
26:封止樹脂
28:外部電極
30、32、34、36、43、47、48、50:電極
38、46:接着剤
39:ボンディングワイヤ
40:第3半導体素子
42:第4半導体素子
44:第3金属バンプ
100:第1積み重ね体
200:第2積み重ね体
Claims (9)
- 上面、及び当該上面と対向する下面、及び前記下面に設けられている外部電極を有する基板と、
複数の第1の電極が設けられていて、前記複数の第1の電極の一部が導電性ワイヤにより電気的に接続されて、前記基板の前記上面に搭載されている第1の半導体素子と、
複数の第2の電極が設けられていて、前記第1の半導体素子の残りの一部の前記第1の電極に前記第2の電極が電気的に接続されて、前記第1の半導体素子上に搭載されている第2の半導体素子と
を具えていることを特徴とする半導体装置。 - 前記基板は、前記上面に配線、及び当該配線の一部を露出させる絶縁層を有していて、
前記第1の半導体素子の前記複数の第1の電極の一部は、前記導電性ワイヤにより、前記露出している配線に接続されていて、前記複数の第1の電極の残りの一部は、導電体により、前記第2の半導体素子の前記第2の電極と電気的に接続されていることを特徴とする請求項1に記載の半導体装置。 - 前記基板は、前記上面から前記下面に貫通しているスルーホールを有していて、
前記配線は、前記スルーホールにより、前記外部電極と電気的に接続されていることを特徴とする請求項2に記載の半導体装置。 - 前記第1及び第2の半導体素子は、樹脂により封止されていることを特徴とする請求項1〜3のいずれか一項に記載の半導体装置。
- 前記第1の半導体素子は、前記第1の電極を露出させる保護膜を有していることを特徴とする請求項1〜4のいずれか一項に記載の半導体装置。
- 前記第2の半導体素子は、前記第2の電極を露出させる保護膜を有していることを特徴とする請求項1〜5のいずれか一項に記載の半導体装置。
- 上面、及び当該上面と対向する下面、前記上面から前記下面に貫通しているスルーホール、前記上面に設けられている第1の配線、前記下面に設けられている第2の配線、前記スルーホールに設けられていて、前記第1及び第2の配線を接続している第3の配線、及び前記第2の配線に接続されている外部電極を有する基板と、
導電性ワイヤにより、前記第1の配線に接続されて前記基板に搭載されている第1の半導体素子と、
導電性バンプにより、前記第1の半導体素子上に電気的に接続されて搭載されている第2の半導体素子と
を具えていることを特徴とする半導体装置。 - 前記第1及び第2の半導体素子は、樹脂により封止されていることを特徴とする請求項7に記載の半導体装置。
- 上面、及び当該上面と対向する下面、前記上面から前記下面に貫通しているスルーホール、前記上面に設けられている第1の配線、前記下面に設けられている第2の配線、前記スルーホールに設けられていて、前記第1及び第2の配線を接続している第3の配線、及び前記第2の配線に接続されている外部電極を有する基板を準備する工程と、
第1の半導体素子の複数の電極の一部と第2の半導体素子の電極同士を、導電性バンプを用いて、熱圧着により電気的に接合して積み重ね体を形成する工程と、
前記積み重ね体の前記第1の半導体素子側を前記基板上に搭載する工程と、
前記第1の半導体素子の前記複数の電極のうち、前記導電性バンプが接続されていない電極及び前記基板の前記第1の配線を、導電性ワイヤにより、電気的に接続する工程と
を含むことを特徴とする半導体装置の製造方法。
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JP2004095255A JP2004207757A (ja) | 2004-03-29 | 2004-03-29 | 半導体装置及びその製造方法 |
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JP9341516A Division JPH11177020A (ja) | 1997-12-11 | 1997-12-11 | 半導体実装構造およびその実装方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007288003A (ja) * | 2006-04-18 | 2007-11-01 | Sharp Corp | 半導体装置 |
JP2008187049A (ja) * | 2007-01-30 | 2008-08-14 | Toshiba Corp | システムインパッケージ装置 |
US8237289B2 (en) | 2007-01-30 | 2012-08-07 | Kabushiki Kaisha Toshiba | System in package device |
US8989663B2 (en) | 2009-03-18 | 2015-03-24 | Kabushiki Kaisha Toshiba | Portable terminal system using a contactless communication unit to enable access to application programs |
-
2004
- 2004-03-29 JP JP2004095255A patent/JP2004207757A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007288003A (ja) * | 2006-04-18 | 2007-11-01 | Sharp Corp | 半導体装置 |
JP2008187049A (ja) * | 2007-01-30 | 2008-08-14 | Toshiba Corp | システムインパッケージ装置 |
US8237289B2 (en) | 2007-01-30 | 2012-08-07 | Kabushiki Kaisha Toshiba | System in package device |
US8989663B2 (en) | 2009-03-18 | 2015-03-24 | Kabushiki Kaisha Toshiba | Portable terminal system using a contactless communication unit to enable access to application programs |
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