CN102412225A - Bga半导体封装及其制造方法 - Google Patents

Bga半导体封装及其制造方法 Download PDF

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CN102412225A
CN102412225A CN2011102812274A CN201110281227A CN102412225A CN 102412225 A CN102412225 A CN 102412225A CN 2011102812274 A CN2011102812274 A CN 2011102812274A CN 201110281227 A CN201110281227 A CN 201110281227A CN 102412225 A CN102412225 A CN 102412225A
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Prior art keywords
substrate
microballoon
semiconductor packages
bga semiconductor
semiconductor element
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CN2011102812274A
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CN102412225B (zh
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木村纪幸
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Ablic Inc
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Seiko Instruments Inc
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Abstract

本发明提供一种BGA半导体封装及其制造方法，能够通过使用简单基板，提供便宜的半导体部件，并且通过在密封体内埋入外部连接用微球，从而薄型且外部端子连接性优良。BGA半导体封装具有：基板，其搭载半导体元件；粘接剂，其粘接半导体元件和基板；导电性的微球，其嵌入到设置于基板上的通孔中；接合线，其电连接半导体元件和微球；以及密封体，其通过密封树脂，在基板的半导体元件面侧，密封半导体元件、粘接剂、微球的一部分以及接合线，微球的底面的至少一部分具有露出部，该露出部从密封体的底面穿过设置在基板上的通孔，作为外部连接用端子露出。

Description

BGA半导体封装及其制造方法
技术领域
本发明涉及BGA半导体封装的构造及其制造方法。
背景技术
伴随电子设备的小型轻量化以及高功能化的需要，要求高密度地安装搭载在电子设备上的半导体部件，近年来，要求更加小型且薄型、能够高集成化的半导体封装。
以如上所述的趋势为背景，与鸥翼式、无引线、BGA、晶片级封装等各种应用对应地公开有各种形式的半导体封装。进而，在当今要求商品低价格化的环境下，要求这些半导体封装除了具有小型、高集成化的功能以外，还能够更加廉价地提供。
如图7所示，属于与本发明有关的BGA(Ball Grid Array：球形触点陈列)类型的半导体封装具有：半导体元件1；粘接剂，用于向设置在基板2的下垫板(die pad)23上搭载半导体元件1；接合线6，用于连接设置在基板2上的多个布线20；以及密封树脂11，其密封半导体元件1、粘接剂、接合线6以及多个布线20，在另一个基板2的表面上具有如下构造：在外部连接部21上作为外部端子形成有焊锡球22。基板2使用以BT树脂(bismaleimide树脂)为代表的耐热基板，在一个面上形成有搭载半导体元件1的下垫板23和多个布线20，在另一个面上形成有外部连接部21，通过覆盖设置在基板2上的导电层的通孔4而连接各个面。在外部连接部21上，以格子状或交错状排列搭载有使半导体密封体和安装基板电连接、物理连接的焊锡球22。(例如，参照专利文献1)
【专利文献1】日本特开平7-193162号公报
【专利文献2】美国专利第5241133号
如上所述，在以往的BGA半导体封装中，由于使用金属引线框的半导体封装不同，并使用采用了耐热树脂基材的双面基板或多层布线基板，因此基板制造步骤复杂。例如，在制作基板时，需要制作用于形成搭载半导体元件的搭载面侧的布线和另一侧的外部连接端子的电路形成用掩模。除此之外，在制造基板时，需要形成用于抗蚀剂涂覆、曝光/显像、抗蚀剂构图、使布线与外部连接端子之间导通的贯通孔，以及电镀形成、抗蚀剂剥离处理、基板的贴合。因此，存在每片基板单价比金属引线框还高，总的封装成本变高的问题。
另外，在以往的BGA半导体封装中，将焊锡球搭载形成在基板上，作为用于连接安装基板之间的外部连接端子。其形成方法采用在基板的外部连接区域上涂布微量的焊膏或融合剂，将焊锡球粘接连接的方式。在上述方式中，当焊锡球或融合剂的涂布量产生偏差时，焊锡球与外部连接区域之间的接触面积产生偏差，在接触面积小的情况下，存在如下问题：焊锡球的连接强度降低，由于外部的振动或撞击而产生焊锡球的位置偏移、形成不良、脱落等的不良。
另外，如上所述，以往的BGA半导体封装存在如下问题：由于在外部连接端子上搭载形成焊锡球，因此，半导体封装的整体厚度会变厚焊锡球的高度量，阻碍薄型化。
发明内容
本发明正是为了解决上述三个问题而提出的，第一，由于采用不使用在以往的BGA半导体封装中使用的双面或多层基板的简单基板，因此能够生产便宜的封装。第二，本发明的BGA半导体封装采用将外部连接用端子的一部分埋入到密封体内的构造，因此密封体和外部连接用端子被牢固地连接，能够提高外部连接端子的连接强度。第三，通过采用将外部连接用端子的一部分埋入到封装的密封体内的构造，能够使封装薄型化外部连接用端子埋入到封装的密封体内的量。
如上所述，本发明提供一种用于解决以往的BGA半导体封装具有的上述问题的半导体封装及其制造方法。
用于解决上述问题的手段如下所述。
本发明的BGA半导体封装，该BGA半导体封装具有：半导体元件；基板，其搭载所述半导体元件；粘接剂，其粘接所述半导体元件和所述基板；导电性的微球，其嵌入到设置于所述基板上的通孔中；接合线，其电连接所述半导体元件和所述微球；以及密封体，其通过密封树脂，仅在所述基板的所述半导体元件的搭载面侧，密封所述半导体元件、所述粘接剂、所述微球的一部分以及所述接合线，其特征在于，所述微球的底面的至少一部分具有露出部，该露出部从所述密封体的底面穿过设置在所述基板上的通孔，作为外部连接用端子露出。
其特征在于，所述基板由树脂、玻璃环氧树脂、陶瓷或者玻璃组成的绝缘体构成，在所述基板上形成有圆柱状的通孔。
其特征在于，设置在所述基板上的通孔的直径比所述微球的直径小，所述基板的厚度比所述微球的直径小。
其特征在于，插入有所述微球的设置在所述基板上的通孔，通过外围配置或者阵列(区域)配置形成在所述密封体的底面。
其特征在于，设置在所述基板上的通孔的端面被进行倒角加工或锥面加工。
其特征在于，所述微球的材质由焊锡、金、银、铜、铝、钯或镍的单一金属材料构成，或者由焊锡、金、银、铜、铝、钯或镍中的几种金属的多层金属材料构成。
其特征在于，所述微球的中心部(芯)由具有弹力的树脂材料构成，所述微球是利用焊锡、金、银、铜、铝、钯或镍等的单一金属材料覆盖所述具有弹力的树脂材料的外周部而成的复合微球，或者是利用焊锡、金、银、铜、铝、钯或镍等中的几种金属的多层金属材料覆盖所述具有弹力的树脂材料的外周部而成的复合微球。
其特征在于，所述微球的上表面高度比固定在所述下垫板上的所述半导体元件的上表面高。
其特征在于，所述微球的上表面高度比固定在所述下垫板上的所述半导体元件的上表面低。
其特征在于，所述接合线由金线、铜线、铝线等的金属线构成。
其特征在于，所述微球的直径为5μm～500μm。
本发明的BGA半导体封装的制造方法，其特征在于，该BGA半导体封装的制造方法具有如下步骤：在所述基板上形成多个通孔；在形成有所述多个通孔的所述基板上搭载微球；在除了所述通孔以外的设置于所述微球搭载侧的区域中的所述下垫板部上，接合半导体元件；通过所述接合线电连接所述半导体元件和所述微球；通过密封树脂，密封所述半导体元件、所述下垫板、所述接合线以及所述微球的一部分；以及将所述密封体单片化成各个BGA半导体封装。
其特征在于，设置在所述基板上的所述通孔是通过钻孔加工、激光加工、图案蚀刻加工、或者使用模具的冲压加工而形成的。
其特征在于，在将所述微球搭载在所述基板的通孔的步骤中，所述微球是通过装配法、吸引法或者基板振动法来搭载的。
其特征在于，在使用所述接合线电连接所述半导体元件和所述微球的步骤中，在通过吸引固定、按压固定、基于粘接材料的固定、金属的溶融连接、超声波连接、或者超声波热压连接将所述微球固定在所述基板的通孔中的状态下，使用引线接合法来电连接。
其特征在于，在仅对所述引线接合之后的构造体的基板上表面侧进行树脂密封的步骤中，使用压注模法或者灌注法。
其特征在于，在将所述树脂密封之后的树脂密封体单片化的步骤中，使用切割法。
通过如上所述的手段，可以不使用在以往的BGA半导体封装中使用的双面基板或多层基板，因此，基板制造步骤得到简化，每片基板的单价得到降低，能够生产便宜的封装。
进而，在本发明的BGA半导体封装中，其特征在于，在密封体内埋入外部连接用球的一部分，封装的密封体保持外部连接用微球的主要体积部分，因此，密封体与外部连接用微球的连接变得牢固。
进而，通过在密封体内埋入外部连接用球的一部分，厚度变薄埋入量，能够实现封装整体的薄型化。
附图说明
图1是说明本发明的第1实施例的BGA半导体封装的构造的图。
图2是说明本发明的第1实施例的BGA半导体封装的制造方法的图。
图3是接着图2说明本发明的第1实施例的BGA半导体封装的制造方法的图。
图4是接着图3说明本发明的第1实施例的BGA半导体封装的制造方法的图。
图5是接着图4说明本发明的第1实施例的BGA半导体封装的制造方法的图。
图6是本发明的第1实施例的BGA半导体封装的剖面构造图。
图7是说明以往的BGA半导体封装的剖面图。
符号说明
1：半导体元件
2：基板
3：锥面
4：通孔
5：微球
6：接合线
7：吸引夹具
8：吸引孔
9：带
10：密封模具
11：密封树脂
12：粘接剂
20：布线
21：外部连接部
22：焊锡球
23：下垫板
24：压板
具体实施方式
以下，对本实施例的BGA半导体封装进行说明。
图1是表示本发明的实施例的BGA半导体封装的一例的图，(A)是表示从密封树脂侧透视密封体的概略结构的立体图，(B)是侧视图，(C)是俯视图。(D)是从外部端子侧透视密封体的立体图。
如图1所示，本实施例所示的BGA半导体封装是具有6个外部连接用端子的6引脚型的半导体封装。如图1(A)～(D)所示，该BGA半导体封装具有：半导体元件1；基板2，其搭载半导体元件1；粘接剂(未图示)，用于将半导体元件1粘接在基板2上；导电性的微球5，其嵌入在设置于基板2上的通孔4中；接合线6，其电连接半导体元件1和微球5；以及密封体，其通过密封树脂11，仅在基板2的半导体元件1侧，密封半导体元件1、粘接剂3、微球5的一部分以及接合线6。如图1(B)所示，微球5的底面的至少一部分具有露出部，该露出部从密封体的底面穿过设置在基板2上的通孔4，作为外部连接用端子露出。
如图1(A)、图1(B)所示，在本实施例的BGA半导体封装中，微球5同时具有与密封体内的半导体元件1之间的内部连接用布线的作用、和作为在与安装基板之间的连接中使用的外部连接用端子的作用。
接着，使用具体尺寸的例子，说明本实施例所示的BGA半导体封装。例如，使用绝缘性的粘接材料将厚度为150μm的半导体元件固定在下垫板区域上，该下垫板区域设置在形成于厚度为0.2mm的玻璃基板2上的6个外部连接用端子的中心位置。在此，将外部连接用端子的搭载间距设为0.5mm，将通孔直径设为0.22mm，将微球5的直径设为0.25mm。在此，设电连接半导体元件1和微球5的接合线6为直径20μm的金线。
在本实施例中使用的微球5是在塑料粒子表面实施镀镍接着实施镀金而成的球(参考积水化学：ミクロパ一ル(注册商标))。在本实施例中，半导体元件1的上表面部的高度比微球5的上表面部高，进行抬下(打ち下げ)的接线。但是，也可以是根据所要求的半导体器件内的尺寸、接合线的环高的制约条件，作为半导体元件1的上表面部的高度比微球5的上表面部低的构造，采用从半导体元件1向微球5抬上(打ち上げ)的接线形式。在抬上的接线形式时，能够通过调整微球5的直径的长度与设置在基板2上的通孔4的直径的长度之间相互的尺寸关系来应对，即，能够通过使微球5的直径＞＞通孔4的直径来应对。另外，也可以不改变微球5的直径与设置在基板2上的微球4的直径的相互的尺寸，而使半导体元件1的厚度变薄来应对。当与微球5连接的第二接合的连接点为微球5的上表面部的顶点时，接合的按压力稳定，能够进一步确保连接可靠性。
接着，使用按照每个步骤示出的图，说明本发明的实施例的BGA半导体封装的制造方法。图2(A)和图5(D)是俯视图，图2(B)～图5(C)以及图6是X1-X1剖面图。图2(A)、(B)分别是基板2的俯视图、剖视图。在基板2上形成有通孔4。例如，在本实施例的情况下，在纵70mm、横200mm、厚度0.2mm的玻璃环氧树脂基板上，使用钻孔加工，以0.5mm间距形成多个0.22mm的圆柱形的通孔。通孔被配置成排列在半导体元件的两侧。为了容易地将微球5搭载到通孔4，在通孔4的上表面部形成锥面3。基板2可以使用陶瓷、玻璃。加工方法也可以是激光加工、图案蚀刻加工、或者使用了模具的冲压加工。
接着，如图2(C)所示，在形成于基板2上的通孔4内，通过植球法搭载微球2。在此，也可以使用使基板2振动而将微球5搭载在通孔4内的振动法。在本实施例中使用的微球5由球的中心部(芯)具有弹力的树脂材料构成，利用从焊锡、金、银、铜、铝、钯等中选择出的单一金属或由这些金属构成的多层金属覆盖树脂材料的外周部。例如，使用在树脂材料的粒子表面上实施镀镍接着实施镀金而成的微球5(参考积水化学：ミクロパ一ル(注册商标))。在此，使用直径0.25mm的微球5。另外，也可以采用微球5的芯不使用树脂材料而由焊锡、金、银、铜、铝、钯等的单一金属构成的微球5或由将几种金属形成多层的多层金属构成的微球5。虽然微球的直径为0.25mm，但是可以根据封装的大小、引脚的数量等，在5μm到500μm之间进行选择。
接着，说明三种将各个微球5固定到设置于基板2上的通孔4中的方法。
首先，如图3(A)所示，在将微球5搭载在基板2上之后，利用压板24按压微球5的上表面，利用微球5的弹性变形或塑性变形固定在通孔4内。
另外，如图3(B)所示，也可以在将微球5搭载在基板2上之后，在基板2的下表面侧安装吸引微球5的吸引夹具(jig)7，从吸引孔8吸引吸引夹具7内的空气，使吸引夹具7内保持负压，将微球5固定在通孔4上。在使用了吸引夹具7的制造方法中，在接下来的芯片焊接步骤、引线接合步骤以及树脂密封步骤结束之前，在将吸引夹具7安装在基板2上的状态下流动。
另外，如图3(C)所示，也可以在将微球5搭载在基板2上之前，预先在基板2的下表面侧粘接UV带9，通过带的粘接材料将微球5固定在通孔4中。
接着，如图4所示，使用绝缘性的粘接材料12，将半导体元件1固定在固定有微球5的基板2上。
接着，如图5(A)所示，将半导体元件1和微球5电连接。通过使用了金线、铜线或铝线的引线接合法来进行连接。在此，使用20μm的金线，通过超声波热压法来电连接半导体元件1和微球5。
接着，如图5(B)所示，在密封模具10内，设置完成了引线接合的基板2，通过密封树脂11仅密封基板2的上表面侧。在此，通过压注模法(transfer mold)进行。在密封树脂时，也可以使用灌注(potting)法。图5(C)是表示树脂密封之后的密封体的图。另外，代替密封树脂，也可以对陶瓷、玻璃材料的中空主体进行配对加工。
接着，根据需要进行树脂的硫化处理，通过切割法将图5(D)所示的树脂密封体的俯视图的Y2-Y2部，单一元件化成各个BGA半导体封装。在单片化之后或者密封体的状态下实施半导体元件1的电特性检查。通过以上的制造方法，完成本发明的BGA半导体封装。图6是已完成的BGA半导体封装的剖面构造图。
另外，在本实施例中，构成外部连接端子的微球仅配置在半导体元件的两侧，但是显然也能够围绕半导体元件而配置在4条边上，这当然也落入到本发明的范围中。

Claims (20)

1.一种BGA半导体封装，其特征在于，该BGA半导体封装具有：
半导体元件；
基板，其搭载所述半导体元件；
粘接剂，其将所述半导体元件粘接在所述基板上；
导电性的微球，其一部分嵌入到设置于所述基板上的通孔中；
接合线，其电连接所述半导体元件和所述微球；以及
密封体，其通过密封树脂，仅在所述基板的所述半导体元件搭载面侧，密封所述半导体元件、所述粘接剂、所述微球中没有嵌入到所述通孔中的部分以及所述接合线，
所述微球的底面的至少一部分具有露出部，该露出部穿过设置在成为所述密封体的底面的所述基板上的通孔，作为外部连接用端子露出。
2.根据权利要求1所述的BGA半导体封装，其特征在于，所述基板由树脂、玻璃环氧树脂、陶瓷或者玻璃中的任意一种绝缘体构成。
3.根据权利要求1或2所述的BGA半导体封装，其特征在于，设置在所述基板上的通孔的形状为圆形。
4.根据权利要求3所述的BGA半导体封装，其特征在于，设置在所述基板上的通孔的直径比所述微球的直径小。
5.根据权利要求1或2所述的BGA半导体封装，其特征在于，所述基板的厚度比所述微球的直径小。
6.根据权利要求1或2所述的BGA半导体封装，其特征在于，插入有所述微球的设置在所述基板上的通孔配置在所述半导体元件的两侧、或者配置在围绕所述半导体元件的4条边上。
7.根据权利要求1或2所述的BGA半导体封装，其特征在于，设置在所述基板上的通孔的端面被进行倒角加工或锥面加工。
8.根据权利要求1或2所述的BGA半导体封装，其特征在于，所述微球的材质由从焊锡、金、银、铜、铝或钯中选择出的单一金属材料构成，或者由使用从焊锡、金、银、铜、铝以及钯中选择出的多种金属的多层金属材料构成。
9.根据权利要求1或2所述的BGA半导体封装，其特征在于，所述微球的中心部由具有弹力的树脂材料构成，所述微球是利用从焊锡、金、银、铜、铝或钯中选择出的单一金属材料覆盖所述具有弹力的树脂材料的外周部而成的复合微球，或者是利用使用从焊锡、金、银、铜、铝以及钯中选择出的多种金属的多层金属材料覆盖所述具有弹力的树脂材料的外周部而成的复合微球。
10.根据权利要求1或2所述的BGA半导体封装，其特征在于，所述微球的上表面高度比固定在所述基板上的所述半导体元件的上表面高。
11.根据权利要求1或2所述的BGA半导体封装，其特征在于，所述微球的上表面高度比固定在所述基板的所述半导体元件的上表面低。
12.根据权利要求1或2所述的BGA半导体封装，其特征在于，所述接合线由金线、铜线、铝线中的任意一种金属线构成。
13.根据权利要求1或2所述的BGA半导体封装，其特征在于，所述微球的直径为5μm到500μm。
14.一种BGA半导体封装的制造方法，其特征在于，该BGA半导体封装的制造方法具有如下步骤：
在基板上形成多个通孔；
在形成有所述多个通孔的所述基板上搭载微球；
在除了所述通孔以外的设置于所述微球搭载侧的区域中的所述基板上，接合半导体元件；
通过接合线电连接所述半导体元件和所述微球；
通过密封树脂，一体地分别密封所述半导体元件、所述基板、所述接合线以及所述微球的一部分，形成密封体；以及
将所述密封体单片化成各个BGA半导体封装。
15.根据权利要求14所述的BGA半导体封装的制造方法，其特征在于，在所述基板上形成多个通孔的步骤，是通过钻孔加工、激光加工、图案蚀刻加工、或者使用模具的冲压加工中的任意一个加工来进行的。
16.根据权利要求14所述的BGA半导体封装的制造方法，其特征在于，在将微球搭载在形成有所述多个通孔的所述基板上的步骤中，所述微球是通过装配法、吸引法或者基板振动法中的任意一个方法来搭载的。
17.根据权利要求14所述的BGA半导体封装的制造方法，其特征在于，所述BGA半导体封装的制造方法还具有如下步骤：将所述微球固定在形成于所述基板上的所述多个通孔中，所述微球是通过按压、吸引或者粘接材料中的任意一个来固定的。
18.根据权利要求17所述的BGA半导体封装的制造方法，其特征在于，在将所述微球固定在形成于所述基板上的所述多个通孔中的所述步骤中，利用所述粘接材料固定所述微球，是在将所述微球搭载在所述基板之前，使用预先粘接在所述基板的下表面侧的UV带的粘接剂进行固定的。
19.根据权利要求14所述的BGA半导体封装的制造方法，其特征在于，在通过密封树脂，一体地分别密封所述半导体元件、所述基板、所述接合线以及所述微球的一部分，形成密封体的步骤中，在通过按压、吸引或者粘接材料中的任意一个将所述微球固定在所述基板的通孔中的状态下，通过压注模法或者灌注法进行树脂密封。
20.根据权利要求14所述的BGA半导体封装的制造方法，其特征在于，在将所述密封体单片化成各个BGA半导体封装的步骤中，使用切割法。
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