JPS6447039A - Wire-bonding - Google Patents

Wire-bonding

Info

Publication number
JPS6447039A
JPS6447039A JP62205521A JP20552187A JPS6447039A JP S6447039 A JPS6447039 A JP S6447039A JP 62205521 A JP62205521 A JP 62205521A JP 20552187 A JP20552187 A JP 20552187A JP S6447039 A JPS6447039 A JP S6447039A
Authority
JP
Japan
Prior art keywords
wire
semiconductor element
chip
bonding surface
capillary chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62205521A
Other languages
Japanese (ja)
Other versions
JPH0748507B2 (en
Inventor
Kiyoaki Tsumura
Hitoshi Fujimoto
Shuichi Osaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62205521A priority Critical patent/JPH0748507B2/en
Publication of JPS6447039A publication Critical patent/JPS6447039A/en
Publication of JPH0748507B2 publication Critical patent/JPH0748507B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H—ELECTRICITY
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    • H01L2224/78—Apparatus for connecting with wire connectors
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H01L2224/78305—Shape of other portions
    • H01L2224/78306—Shape of other portions inside the capillary
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20109—Temperature range 350 C=<T<400 C, 623.15K =<T< 673.15K

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To realize a highly reliable connection of a wire to a wire bonding surface by a method wherein the dimensional ratio of the distance between a capillary chip end and a semiconductor element wire bonding surface to the diameter of a wire on the wire bonding surface is so established as to fall in a specified range. CONSTITUTION:A ball section of a copper wire 2 going through a capillary chip 1 is pressure-welded to an aluminum electrode 6a of a semiconductor element 6. The chip's static pressure is set at 100-130gr, the semiconductor element 6 is heated to 360-390 deg.C, and supersonic oscillation is applied to the capillary chip 1. In this process, it is so set that the ratio H/D, where H is the distance between an end 1a of the capillary chip 1 and D is the diameter of a wire on the aluminum electrode 6a, will be set at 1/6-1/400. Bonding is then accomplished of the wire to the aluminum-based electrode 6a of the semiconductor element 6.
JP62205521A 1987-08-18 1987-08-18 Wire bonding method Expired - Fee Related JPH0748507B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62205521A JPH0748507B2 (en) 1987-08-18 1987-08-18 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205521A JPH0748507B2 (en) 1987-08-18 1987-08-18 Wire bonding method

Publications (2)

Publication Number Publication Date
JPS6447039A true JPS6447039A (en) 1989-02-21
JPH0748507B2 JPH0748507B2 (en) 1995-05-24

Family

ID=16508256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62205521A Expired - Fee Related JPH0748507B2 (en) 1987-08-18 1987-08-18 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH0748507B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03208355A (en) * 1990-01-10 1991-09-11 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US5116783A (en) * 1989-01-13 1992-05-26 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
DE102004013617B4 (en) * 2003-03-25 2009-07-16 Suzuki Motor Corp., Hamamatsu-Shi Control for starting a motor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116783A (en) * 1989-01-13 1992-05-26 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JPH03208355A (en) * 1990-01-10 1991-09-11 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
DE102004013617B4 (en) * 2003-03-25 2009-07-16 Suzuki Motor Corp., Hamamatsu-Shi Control for starting a motor

Also Published As

Publication number Publication date
JPH0748507B2 (en) 1995-05-24

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