KR910015024A - 반도체장치 및 그 제조방법 - Google Patents
반도체장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR910015024A KR910015024A KR1019900018073A KR900018073A KR910015024A KR 910015024 A KR910015024 A KR 910015024A KR 1019900018073 A KR1019900018073 A KR 1019900018073A KR 900018073 A KR900018073 A KR 900018073A KR 910015024 A KR910015024 A KR 910015024A
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- South Korea
- Prior art keywords
- electrode pad
- aluminum electrode
- copper ball
- semiconductor element
- copper
- Prior art date
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/603—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 반도체 장치를 표시하는 단면도.
Claims (2)
- 리드후레임의 다이스패드와, 이 다이스패드 위에 설치되고, 알미늄전극패드 및 유리코드를 가지는 반도체 소자와, 이 반도체소자와 상기 다이스패드와를 고착하는 땜납이고, 상기 유리코트와 상기 알미늄전극패드와의 열팽창차에 의한 크랙을 발생시키지 않은 액상선온도를 가지는 땜납과, 상기 알미늄전극 패드에 와이야 본딩된 동극세선과를 구비한 것을 특징으로 하는 반도체장치.
- 동극세선의 선단부를 용융하여 동볼을 형성하고, 이 동볼의 형성으로부터 150ms이 내의 시간으로 상기 동볼을 반도체소자위의 A1전극패드까지 강하, 접속시켜, 계속하여, 상기 동볼의 높이가 25㎛이하로 되도록 동볼을 상기 알미늄전극패드에 눌러 접속 25㎛이하로 되도록 동볼을 상기 알미늄전극패드에 눌러 접속하는 것을 특징으로 하는 반도체장치의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2-1467 | 1990-01-10 | ||
JP2001467A JPH03208355A (ja) | 1990-01-10 | 1990-01-10 | 半導体装置及びその製造方法 |
SG155894A SG155894G (en) | 1990-01-10 | 1994-10-21 | Semiconductor device and method of producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910015024A true KR910015024A (ko) | 1991-08-31 |
KR940003563B1 KR940003563B1 (ko) | 1994-04-23 |
Family
ID=26334679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900018073A KR940003563B1 (ko) | 1990-01-10 | 1990-11-09 | 반도체 장치 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH03208355A (ko) |
KR (1) | KR940003563B1 (ko) |
DE (1) | DE4021031C2 (ko) |
GB (1) | GB2239829B (ko) |
SG (1) | SG155894G (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5455195A (en) * | 1994-05-06 | 1995-10-03 | Texas Instruments Incorporated | Method for obtaining metallurgical stability in integrated circuit conductive bonds |
US6376910B1 (en) * | 1999-06-23 | 2002-04-23 | International Rectifier Corporation | Solder-on back metal for semiconductor die |
CN102484080B (zh) * | 2009-06-18 | 2015-07-22 | 罗姆股份有限公司 | 半导体装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1457806A (en) * | 1974-03-04 | 1976-12-08 | Mullard Ltd | Semiconductor device manufacture |
DE2428373C2 (de) * | 1974-06-12 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von weichlötbaren Anschlußkontakten auf einer Halbleiteranordnung |
DE2628433B2 (de) * | 1976-06-24 | 1978-09-07 | Focke & Pfuhl, 3090 Verden | Packung mit Schieber und Hülse |
JPS5321771A (en) * | 1976-08-11 | 1978-02-28 | Sharp Kk | Electronic parts mounting structure |
JPS586143A (ja) * | 1981-07-02 | 1983-01-13 | Matsushita Electronics Corp | 半導体装置 |
JPS5873127A (ja) * | 1981-10-28 | 1983-05-02 | Hitachi Ltd | Icチツプのはんだ溶融接続方法 |
CH662007A5 (en) * | 1983-12-21 | 1987-08-31 | Bbc Brown Boveri & Cie | Method of soldering semiconductor components |
DE3523808C3 (de) * | 1984-07-03 | 1995-05-04 | Hitachi Ltd | Verfahren zum Löten von Teilen einer elektronischen Anordnung aus unterschiedlichen Werkstoffen und dessen Verwendung |
DE3446780A1 (de) * | 1984-12-21 | 1986-07-03 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen |
GB2178683A (en) * | 1985-07-11 | 1987-02-18 | Nat Semiconductor Corp | Improved semiconductor die-attach method and product |
DE3641524A1 (de) * | 1985-12-10 | 1987-06-11 | Mitsubishi Electric Corp | Verfahren zur herstellung eines halbleiterbauelements |
DE3641689A1 (de) * | 1985-12-24 | 1987-06-25 | Mitsubishi Electric Corp | Verfahren zur herstellung eines halbleiterbauelements und eines darin verwendeten halbleiterchips |
JPS63148646A (ja) * | 1986-12-12 | 1988-06-21 | Toshiba Corp | 半導体装置 |
JPH0748507B2 (ja) * | 1987-08-18 | 1995-05-24 | 三菱電機株式会社 | ワイヤボンデイング方法 |
JPH01201934A (ja) * | 1988-02-08 | 1989-08-14 | Mitsubishi Electric Corp | ワイヤボンディング方法及びキャピラリチップ |
JPH0817189B2 (ja) * | 1989-01-13 | 1996-02-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
-
1990
- 1990-01-10 JP JP2001467A patent/JPH03208355A/ja active Pending
- 1990-05-09 GB GB9010385A patent/GB2239829B/en not_active Expired - Fee Related
- 1990-07-02 DE DE4021031A patent/DE4021031C2/de not_active Expired - Fee Related
- 1990-11-09 KR KR1019900018073A patent/KR940003563B1/ko not_active IP Right Cessation
-
1994
- 1994-10-21 SG SG155894A patent/SG155894G/en unknown
Also Published As
Publication number | Publication date |
---|---|
DE4021031A1 (de) | 1991-07-11 |
GB2239829A (en) | 1991-07-17 |
JPH03208355A (ja) | 1991-09-11 |
GB2239829B (en) | 1994-07-06 |
GB9010385D0 (en) | 1990-06-27 |
SG155894G (en) | 1995-03-17 |
DE4021031C2 (de) | 1995-04-20 |
KR940003563B1 (ko) | 1994-04-23 |
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