KR910015024A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR910015024A
KR910015024A KR1019900018073A KR900018073A KR910015024A KR 910015024 A KR910015024 A KR 910015024A KR 1019900018073 A KR1019900018073 A KR 1019900018073A KR 900018073 A KR900018073 A KR 900018073A KR 910015024 A KR910015024 A KR 910015024A
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South Korea
Prior art keywords
electrode pad
aluminum electrode
copper ball
semiconductor element
copper
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KR1019900018073A
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English (en)
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KR940003563B1 (ko
Inventor
기요아끼 스무라
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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Publication of KR910015024A publication Critical patent/KR910015024A/ko
Application granted granted Critical
Publication of KR940003563B1 publication Critical patent/KR940003563B1/ko

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    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/603Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding
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Abstract

내용 없음

Description

반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 반도체 장치를 표시하는 단면도.

Claims (2)

  1. 리드후레임의 다이스패드와, 이 다이스패드 위에 설치되고, 알미늄전극패드 및 유리코드를 가지는 반도체 소자와, 이 반도체소자와 상기 다이스패드와를 고착하는 땜납이고, 상기 유리코트와 상기 알미늄전극패드와의 열팽창차에 의한 크랙을 발생시키지 않은 액상선온도를 가지는 땜납과, 상기 알미늄전극 패드에 와이야 본딩된 동극세선과를 구비한 것을 특징으로 하는 반도체장치.
  2. 동극세선의 선단부를 용융하여 동볼을 형성하고, 이 동볼의 형성으로부터 150ms이 내의 시간으로 상기 동볼을 반도체소자위의 A1전극패드까지 강하, 접속시켜, 계속하여, 상기 동볼의 높이가 25㎛이하로 되도록 동볼을 상기 알미늄전극패드에 눌러 접속 25㎛이하로 되도록 동볼을 상기 알미늄전극패드에 눌러 접속하는 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900018073A 1990-01-10 1990-11-09 반도체 장치 및 그 제조방법 KR940003563B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2-1467 1990-01-10
JP2001467A JPH03208355A (ja) 1990-01-10 1990-01-10 半導体装置及びその製造方法
SG155894A SG155894G (en) 1990-01-10 1994-10-21 Semiconductor device and method of producing the same

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KR910015024A true KR910015024A (ko) 1991-08-31
KR940003563B1 KR940003563B1 (ko) 1994-04-23

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DE (1) DE4021031C2 (ko)
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Publication number Priority date Publication date Assignee Title
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US6376910B1 (en) * 1999-06-23 2002-04-23 International Rectifier Corporation Solder-on back metal for semiconductor die
CN102484080B (zh) * 2009-06-18 2015-07-22 罗姆股份有限公司 半导体装置

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Publication number Priority date Publication date Assignee Title
GB1457806A (en) * 1974-03-04 1976-12-08 Mullard Ltd Semiconductor device manufacture
DE2428373C2 (de) * 1974-06-12 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von weichlötbaren Anschlußkontakten auf einer Halbleiteranordnung
DE2628433B2 (de) * 1976-06-24 1978-09-07 Focke & Pfuhl, 3090 Verden Packung mit Schieber und Hülse
JPS5321771A (en) * 1976-08-11 1978-02-28 Sharp Kk Electronic parts mounting structure
JPS586143A (ja) * 1981-07-02 1983-01-13 Matsushita Electronics Corp 半導体装置
JPS5873127A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd Icチツプのはんだ溶融接続方法
CH662007A5 (en) * 1983-12-21 1987-08-31 Bbc Brown Boveri & Cie Method of soldering semiconductor components
DE3523808C3 (de) * 1984-07-03 1995-05-04 Hitachi Ltd Verfahren zum Löten von Teilen einer elektronischen Anordnung aus unterschiedlichen Werkstoffen und dessen Verwendung
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen
GB2178683A (en) * 1985-07-11 1987-02-18 Nat Semiconductor Corp Improved semiconductor die-attach method and product
DE3641524A1 (de) * 1985-12-10 1987-06-11 Mitsubishi Electric Corp Verfahren zur herstellung eines halbleiterbauelements
DE3641689A1 (de) * 1985-12-24 1987-06-25 Mitsubishi Electric Corp Verfahren zur herstellung eines halbleiterbauelements und eines darin verwendeten halbleiterchips
JPS63148646A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
JPH0748507B2 (ja) * 1987-08-18 1995-05-24 三菱電機株式会社 ワイヤボンデイング方法
JPH01201934A (ja) * 1988-02-08 1989-08-14 Mitsubishi Electric Corp ワイヤボンディング方法及びキャピラリチップ
JPH0817189B2 (ja) * 1989-01-13 1996-02-21 三菱電機株式会社 半導体装置の製造方法

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DE4021031A1 (de) 1991-07-11
GB2239829A (en) 1991-07-17
JPH03208355A (ja) 1991-09-11
GB2239829B (en) 1994-07-06
GB9010385D0 (en) 1990-06-27
SG155894G (en) 1995-03-17
DE4021031C2 (de) 1995-04-20
KR940003563B1 (ko) 1994-04-23

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