GB9010385D0 - Semiconductor device and method of producing the same - Google Patents

Semiconductor device and method of producing the same

Info

Publication number
GB9010385D0
GB9010385D0 GB909010385A GB9010385A GB9010385D0 GB 9010385 D0 GB9010385 D0 GB 9010385D0 GB 909010385 A GB909010385 A GB 909010385A GB 9010385 A GB9010385 A GB 9010385A GB 9010385 D0 GB9010385 D0 GB 9010385D0
Authority
GB
United Kingdom
Prior art keywords
ball
semiconductor chip
less
electrode pad
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB909010385A
Other versions
GB2239829A (en
GB2239829B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB9010385D0 publication Critical patent/GB9010385D0/en
Publication of GB2239829A publication Critical patent/GB2239829A/en
Priority to GB9323785A priority Critical patent/GB2271073B/en
Application granted granted Critical
Publication of GB2239829B publication Critical patent/GB2239829B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L21/603—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding
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Abstract

A semiconductor device in accordance with the present invention includes a semiconductor chip 1 which is bonded to a die pad 3 by using a solder 17 having a liquidus line temperature of 370 DEG C or less which avoids cracking a glass layer 6. A copper ball formed by flaming out one end of a copper wire 8 is moved downward to an Al electrode pad 5 on the semiconductor chip and brought into contact for less than 150 ms also avoiding cracking the glasslayer. Plastic deformation then occurs so that the copper ball is pressed to the aluminum electrode pad in such a manner that the height of the copper ball is 25 gm or less. A silver plating 2 is utilized on the die pad and an Au-metallized layer 16 on the rear side of the semiconductor chip. The method also decreases the work hardening property of the Cu ball and prevent Al exclusion when the Cu ball is bonded to the Al electrode pad. <IMAGE>
GB9010385A 1990-01-10 1990-05-09 Semiconductor device and method of producing the same Expired - Fee Related GB2239829B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9323785A GB2271073B (en) 1990-01-10 1993-11-18 Method of producing a semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001467A JPH03208355A (en) 1990-01-10 1990-01-10 Semiconductor device and manufacture thereof
SG155894A SG155894G (en) 1990-01-10 1994-10-21 Semiconductor device and method of producing the same

Publications (3)

Publication Number Publication Date
GB9010385D0 true GB9010385D0 (en) 1990-06-27
GB2239829A GB2239829A (en) 1991-07-17
GB2239829B GB2239829B (en) 1994-07-06

Family

ID=26334679

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9010385A Expired - Fee Related GB2239829B (en) 1990-01-10 1990-05-09 Semiconductor device and method of producing the same

Country Status (5)

Country Link
JP (1) JPH03208355A (en)
KR (1) KR940003563B1 (en)
DE (1) DE4021031C2 (en)
GB (1) GB2239829B (en)
SG (1) SG155894G (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US6376910B1 (en) * 1999-06-23 2002-04-23 International Rectifier Corporation Solder-on back metal for semiconductor die
CN102484080B (en) * 2009-06-18 2015-07-22 罗姆股份有限公司 Semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1457806A (en) * 1974-03-04 1976-12-08 Mullard Ltd Semiconductor device manufacture
DE2428373C2 (en) * 1974-06-12 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Method for the production of solderable connection contacts on a semiconductor arrangement
DE2628433B2 (en) * 1976-06-24 1978-09-07 Focke & Pfuhl, 3090 Verden Pack with slider and sleeve
JPS5321771A (en) * 1976-08-11 1978-02-28 Sharp Kk Electronic parts mounting structure
JPS586143A (en) * 1981-07-02 1983-01-13 Matsushita Electronics Corp Semiconductor device
JPS5873127A (en) * 1981-10-28 1983-05-02 Hitachi Ltd Solder melting connection for ic chip
CH662007A5 (en) * 1983-12-21 1987-08-31 Bbc Brown Boveri & Cie Method of soldering semiconductor components
DE3523808C3 (en) * 1984-07-03 1995-05-04 Hitachi Ltd Process for soldering parts of an electronic arrangement made of different materials and its use
DE3446780A1 (en) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim METHOD AND JOINING MATERIAL FOR METALLICALLY CONNECTING COMPONENTS
GB2178683A (en) * 1985-07-11 1987-02-18 Nat Semiconductor Corp Improved semiconductor die-attach method and product
DE3641524A1 (en) * 1985-12-10 1987-06-11 Mitsubishi Electric Corp Method of fabricating a semiconductor component
DE3641689A1 (en) * 1985-12-24 1987-06-25 Mitsubishi Electric Corp Method of fabricating a semiconductor component and a semiconductor chip used therein
JPS63148646A (en) * 1986-12-12 1988-06-21 Toshiba Corp Semiconductor device
JPH0748507B2 (en) * 1987-08-18 1995-05-24 三菱電機株式会社 Wire bonding method
JPH01201934A (en) * 1988-02-08 1989-08-14 Mitsubishi Electric Corp Wire bonding and capillary chip
JPH0817189B2 (en) * 1989-01-13 1996-02-21 三菱電機株式会社 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
DE4021031A1 (en) 1991-07-11
GB2239829A (en) 1991-07-17
KR910015024A (en) 1991-08-31
JPH03208355A (en) 1991-09-11
GB2239829B (en) 1994-07-06
SG155894G (en) 1995-03-17
DE4021031C2 (en) 1995-04-20
KR940003563B1 (en) 1994-04-23

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