DE3641524A1 - Method of fabricating a semiconductor component - Google Patents

Method of fabricating a semiconductor component

Info

Publication number
DE3641524A1
DE3641524A1 DE19863641524 DE3641524A DE3641524A1 DE 3641524 A1 DE3641524 A1 DE 3641524A1 DE 19863641524 DE19863641524 DE 19863641524 DE 3641524 A DE3641524 A DE 3641524A DE 3641524 A1 DE3641524 A1 DE 3641524A1
Authority
DE
Germany
Prior art keywords
electrode
bonding
thermal treatment
wire
metal wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19863641524
Other languages
German (de)
Inventor
Kazumichi Machida
Jitsuiho Hirota
Masaaki Shimotomai
Seizo Omae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60278652A external-priority patent/JPS62136841A/en
Priority claimed from JP60278651A external-priority patent/JPS62136840A/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3641524A1 publication Critical patent/DE3641524A1/en
Ceased legal-status Critical Current

Links

Classifications

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  • Wire Bonding (AREA)

Abstract

In a method of fabricating a semiconductor component comprising a semiconductor chip whose electrode is connected to a conductor by means of a metal wire, a semiconductor chip is provided with an electrode in a preparatory step, a metal wire is bonded to said electrode and a thermal treatment is applied which is such that a deterioration and impairment of the bonded region between the electrode and the metal wire are prevented.

Description

Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung eines Halbleiterbauelementes, wie eines ICs (integrierte Schaltung) und eines diskreten oder Einzelhalbleiter-Bauelements, welches über einen Metalldraht mit einer Leitung, beispielsweise einer Leiterbahn, verbunden werden soll.The present invention relates to a method for the production of a semiconductor component, such as an IC (integrated circuit) and a discrete one or single semiconductor component, which over a Metal wire with a lead, for example one Conductor track to be connected.

In Fig. 1 ist ein Verfahren zum Bondieren, d.h. zum Herstellen einer Kontaktverbindung, eines Drahtes aus einem Halbleiterbauelement dargestellt. Diese Drahtbondierung oder Drahtkontaktierung soll eine auf einem Halbleiterchip 2 ausgebildete Aluminium­ elektrode 3 mittels eines Golddrahts 1 mit einer Leitung 4 aus einer Kupferlegierung verbinden, wobei diese Leitung einer Oberflächenbehandlung, wie bei­ spielsweise einer metallischen Überziehung mit Silber, unterzogen worden ist und ein haarröhrenförmiger Körper, d.h. ein Kapillarteil, das als Bondierungswerkzeug dient, benutzt wird.In Fig. 1 is a process for bonding, that is, for producing a contact compound represented a wire of a semiconductor device. This wire bonding or wire contact is intended to connect an aluminum electrode 3 formed on a semiconductor chip 2 by means of a gold wire 1 to a line 4 made of a copper alloy, this line being subjected to a surface treatment, such as a metallic coating with silver, and a hair-tubular body, ie a capillary part which serves as a bonding tool is used.

Um eine solche Verbindung zu erzielen, wird ein Ende des Golddrahtes 1 durch eine Lichtbogenheizein­ wirkung zum Fließen bzw. Schmelzen gebracht, woraufhin man es zu einer Kugel 1 a festwerden oder erstarren läßt. Anschließend wird die Kugel 1 a durch Kugelthermokom­ pression an die Aluminiumelektrode angeheftet (Fig. 1a und 1b). Daraufhin wird der Draht 1 abgeleitet und durch eine Steppkontaktierung (Fig. 1c und 1d) mit der Leitung 4 verbunden. Häufig wird zum Bondieren des Drahtes 1 das Thermoschallverfahren angewendet. In order to achieve such a connection, one end of the gold wire 1 is brought to flow or melting by an arc heating effect, whereupon it is solidified or solidified into a ball 1 a . Subsequently, the ball 1 a is attached by ball thermocompression to the aluminum electrode ( Fig. 1a and 1b). The wire 1 is then drained off and connected to the line 4 by a step contact (FIGS . 1c and 1d). The thermal sound method is often used to bond the wire 1 .

Da das für den Draht benutzte Gold teuer ist und eine langfristige Zuverlässigkeit und Dauerhaftigkeit der Verbindung zwischen Golddraht und Aluminiumelek­ trode nicht ausreichend hoch sind, werden im folgenden verschiedene alternative Materialien und Bondierungs­ techniken näher untersucht.Since the gold used for the wire is expensive and long-term reliability and durability the connection between gold wire and aluminum electrode trode are not sufficiently high, are the following various alternative materials and bonding techniques examined in more detail.

Die langfristige Zuverlässigkeit und Betriebs­ sicherheit an der Verbindung zwischen dem Metalldraht und der Elektrode des Halbleiterchips wird durch Interdiffusionen beeinflußt und beeinträchtigt, die mit der Zeit an dieser Grenze zwischen dem Metalldraht und der Elektrode des Halbleiterchips auftreten, und es bildet sich eine intermetallische Zusammensetzung oder Verbindung 6, bzw. es wächst eine derartige inter­ metallische Verbindung an der Grenzfläche, wie sie in Fig. 2 angedeutet ist. Dieses führt jedoch zu einer Verschlechterung der Eigenschaften des Bauelementes und kann ein Abschälen oder Ablösen der Leitung ver­ ursachen. Aus diesem Grunde ist die langfristige Zu­ verlässigkeit nur gering.The long-term reliability and operational safety at the connection between the metal wire and the electrode of the semiconductor chip is influenced and impaired by interdiffusions that occur over time at this boundary between the metal wire and the electrode of the semiconductor chip, and an intermetallic composition or connection forms 6 , or such an intermetallic compound grows at the interface as indicated in FIG. 2. However, this leads to a deterioration in the properties of the component and can cause peeling or detachment of the line. For this reason, long-term reliability is low.

Das Wachsen der intermetallischen Zusammensetzung ist erleichtert, wenn der Metalldraht aus Gold ist und die Elektrode des Halbleiterbauelementes aus Aluminium. Darüber hinaus tritt dieses Anwachsen der Verbindung oder des Kompounds leichter auf, wenn das Halbleiter­ bauelement in einer Hochtemperaturumgebung benutzt wird.The growth of the intermetallic composition is relieved when the metal wire is made of gold and the electrode of the semiconductor component made of aluminum. In addition, this connection growth occurs or the compound more easily if the semiconductor device used in a high temperature environment becomes.

Um dieses Anwachsen der intermetallischen Zu­ sammensetzung zu verhindern, könnten die Bondierungs­ bedingungen so eingestellt werden, daß die Reaktion während der Bondierung nur oberflächlich und flach ist. Jedoch würde hierdurch die Bondierungshaftfestigkeit vermindert und es könnte eine Ablösung des Drahtes die Folge sein. To cope with this growth of the intermetallic Zu could prevent the bonding Conditions are set so that the reaction is only superficial and flat during bonding. However, this would reduce the bond strength diminished and there could be a detachment of the wire be the result.  

Darüber hinaus unterscheidet sich beim konven­ tionellen Verfahren der Zustand der Bondierungskontak­ tierung von einem Punkt zum anderen. Hierdurch wird ebenfalls die langfristige Stabilität und Dauerhaftig­ keit vermindert.It also differs in the konven tional procedure of the state of bonding contact from one point to another. This will also long-term stability and durability reduced.

Der vorliegenden Erfindung liegt die Aufgabe zugrunde, die langfristige Zuverlässigkeit eines Halbleiterbauelementes zu verbessern, und zwar ins­ besondere, wenn das Halbleiterbauelement in einer Hochtemperaturumgebung benutzt wird.The object of the present invention is to achieve this underlying the long term reliability of a To improve semiconductor device, namely ins special if the semiconductor device in a High temperature environment is used.

Ferner soll durch die Erfindung ein Ablösen des Drahtes verhindert werden.Furthermore, the invention is intended to detach it of the wire can be prevented.

Durch die Erfindung wird ein Verfahren zur Her­ stellung eines Halbleiterbauelementes, welches einen Halbleiterchip aufweist, dessen Elektrode mittels eines Metalldrahtes mit einer Leitung verbunden ist, angege­ ben, welches Verfahren als Verfahrensschritte aufweist: Versehen des Halbleiterchips mit einer Elektrode in einem vorbereitenden Schritt, Bondieren eines Metall­ drahtes an diese Elektrode und Anwenden einer solchen Thermobehandlung, daß eine Verschlechterung und Beein­ trächtigung des bondierten Bereichs zwischen der Elek­ trode und dem Metalldraht verhindert ist.The invention provides a method for manufacturing position of a semiconductor device which a Has semiconductor chip, the electrode by means of a Metal wire is connected to a line, indicated ben, which method has as procedural steps: Providing the semiconductor chip with an electrode in a preparatory step, bonding a metal wire to this electrode and applying such Heat treatment that deterioration and deterioration the bonded area between the elec trode and the metal wire is prevented.

Im folgenden wird die Erfindung an Hand der Zeichnungen näher erläutert. Dabei zeigen: In the following the invention is based on the Drawings explained in more detail. Show:  

Fig. 1 in schematischer Weise die Ausführung der Drahtbondierung bzw. -kontaktierung, Fig. 1 shows schematically the embodiment of the wire bonding or -kontaktierung,

Fig. 2 die Deformation einer Elektrodenschicht, Fig. 2 shows the deformation of an electrode layer,

Fig. 3 eine schematische Darstellung eines Teils eines Halbleiterbauelementes, welches durch ein Verfahren gemäß einem Ausführungsbeispiel der vorlie­ genden Erfindung hergestellt worden ist, Fig. 3 is a schematic representation of a portion of a semiconductor device which has been manufactured by a method according to an embodiment of the constricting vorlie invention,

Fig. 4 ein Diagramm, das den Bereich von zu­ friedenstellende Ergebnisse liefernden Bedingungen darstellt, FIG. 4 is a diagram illustrating the range of conditions providing satisfactory results.

Fig. 5 ein Diagramm, das die Beziehung zwischen der Temperatur der Thermo- oder Wärmebehandlung und der resultierenden Bondierungsfestigkeit zeigt, und Fig. 5 is a graph showing the relationship between the temperature of the thermal or heat treatment and the resulting bonding strength, and

Fig. 6 eine schematische Darstellung, die eine in einem zweiten erfindungsgemäßen Ausführungsbeispiel ausgebildete Schutzschicht zeigt. Fig. 6 is a schematic illustration showing a protective layer formed in a second embodiment of the present invention.

Durch ein Ausführungsbeispiel des erfindungsge­ mäßen Verfahrens soll eine Halbleitervorrichtung oder ein Halbleiterbauelement hergestellt werden, wie es in Fig. 3 gezeigt ist, wobei dieses Halbleiterbauelement einen Halbleiterchip 2 mit einer Elektrode, beispiels­ weise einer auf der Oberfläche des Halbleiterchips 2 ausgebildeten Aluminiumelektrode 3 aufweist. Die Elek­ trode 3 ist mittels eines Metalldrahtes, wie bei­ spielsweise eines Kupferdrahtes 10 mit einer Leitung 4 verbunden. Eine Legierungs- (intermetallische Ver­ bindungs- oder Kompound-) Schicht 6 ist am bondierten Bereich zwischen dem kugelförmigen Bereich 10 a des Kupferdrahtes 10 und der Aluminiumelektrode 3 ausge­ bildet. An exemplary embodiment of the method according to the invention is intended to produce a semiconductor device or a semiconductor component, as shown in FIG. 3, this semiconductor component having a semiconductor chip 2 with an electrode, for example an aluminum electrode 3 formed on the surface of the semiconductor chip 2 . The elec trode 3 is connected by means of a metal wire, such as a copper wire 10 with a line 4 . An alloy (intermetallic compound or compound) layer 6 is formed on the bonded area between the spherical area 10 a of the copper wire 10 and the aluminum electrode 3 .

Das dargestellte Halbleiterbauelement wird in der folgenden Weise hergestellt. Zunächst wird in einem vorbereitenden Schritt der Halbleiterchip 2 mit einer Aluminiumelektrode 3 versehen.The semiconductor device shown is manufactured in the following manner. First, the semiconductor chip 2 is provided with an aluminum electrode 3 in a preparatory step.

Daraufhin wird der Draht 10 durch Kugelthermokom­ pression an die Elektrode 3 angeheftet. Für diese Kugel-Bondierung wird die Spitze des Drahtes erhitzt, so daß sich eine geschmolzene Kugel an der Spitze des Drahtes bildet. Die notwendige Erwärmung kann bei­ spielsweise durch Anlegen einer Hochspannung über die Drahtspitze und eine Entladeelektrode der Kapillare, die nicht als solche dargestellt ist, erzielt werden, wobei hierdurch eine Bogenentladung über die Drahtspitze und die Entladeelektrode verursacht wird. Die Kugel wird dabei, je mehr von diesem Draht zum Fließen ge­ bracht wird, immer größere Ausmaße annehmen. Dann wird die Kugel an die Elektrode gepreßt, wodurch eine Bon­ dierung erzielt wird. Dieses Verfahren ist ähnlich dem bereits an Hand von Fig. 1 beschriebenen Verfahren.The wire 10 is then attached to the electrode 3 by ball thermocompression. For this ball bonding, the tip of the wire is heated so that a molten ball forms on the tip of the wire. The necessary heating can be achieved in example by applying a high voltage across the wire tip and a discharge electrode of the capillary, which is not shown as such, thereby causing an arc discharge across the wire tip and the discharge electrode. The more this wire is made to flow, the ball will assume ever larger dimensions. Then the ball is pressed against the electrode, whereby a bonding is achieved. This method is similar to the method already described with reference to FIG. 1.

Die verschiedenen Bedingungen während des Bondier­ vorganges, einschließlich der Temperaturbedingungen und der Parameter (Amplitude, Frequenz) der Ultra­ schallschwingung können so eingestellt werden, daß eine wunschgemäße Bondierungskontaktierung erzielt wird. Entsprechend diesem Ausführungsbeispiel werden die Bedingungen so festgelegt, daß die Beschaffenheit des Bondierungskontaktes gerade so ist, daß seine Tiefe gerade dazu ausreicht, ein Ablösen bei einer geringen Kraft zu verhindern, und ferner ein abnormes Anwachsen der intermetallischen Verbindung an der Bondierungs­ zwischenschicht nicht zu verursachen. Eine solche Tiefe ist geringer als die Tiefe, die gemeinhin als notwendig erachtet werden würde, da ohne weitere Lösungsmaßnahmen eine solche Tiefe nicht ausreichen würde, um eine nor­ malerweise geforderte Bondierungskontaktfestigkeit zu liefern. The different conditions during the bond process, including temperature conditions and the parameters (amplitude, frequency) of the Ultra sound vibrations can be set so that a desired bonding contact is achieved. According to this embodiment, the Conditions determined so that the nature of the Bonding contact is just that its depth just enough, a detachment at a low Prevent force and abnormal growth the intermetallic compound on the bonding not to cause intermediate layer. Such depth is less than the depth that is commonly considered necessary would be considered as without further solution measures such a depth would not be sufficient to sometimes required bonding contact strength deliver.  

Nach der Bondierung wird eine Thermobehandlung angewandt. Die Thermo- oder Wärmebehandlung kann dem Zweck der Verbesserung der langfristigen Zuverlässig­ keit des bondierten Bereichs dienen. Die Bedingungen für die Wärmebehandlung sind in Fig. 4 dargestellt, in welcher ein zufriedenstellender Bereich in Ab­ hängigkeit von der Temperatur (°C) und der Erwärmungs­ zeit (Sekunden) definiert ist. Mit der zufriedenstel­ lenden Wärmebehandlung wird die Bondierungskontakt­ festigkeit des bondierten Bereichs verbessert, und die Beschaffenheit und der Zustand der Bondierung bzw. Verbindung werden gleichmäßig und einheitlich. Infolgedessen ist die langzeitmäßige Zuverlässigkeit und Betriebssicherheit insbesondere für die Benutzung in einer Hochtemperaturumgebung verbessert. Befindet sich die Temperatur über einem Wert von 360°C, so wirkt sich ein nachteiliger Effekt auf die Bauelement­ eigenschaften und -kenndaten aus. Die minimale Tempe­ ratur, unterhalb derer eine ausreichende Kontaktfestig­ keit nicht mehr erzielt werden kann, ist eine Funktion der Erwärmungszeit. Beispielsweise beträgt die minimale Temperatur bei einer Erwärmungszeit von 60 s ungefähr 230°C. Beträgt die Erwärmungszeit 10 s, so liegt die minimale Temperatur bei ungefähr 320°C.After the bonding, a thermal treatment is applied. The thermal or heat treatment can serve the purpose of improving the long-term reliability of the bonded area. The conditions for the heat treatment are shown in Fig. 4, in which a satisfactory range depending on the temperature (° C) and the heating time (seconds) is defined. With the satisfactory heat treatment, the bonding contact strength of the bonded area is improved, and the nature and condition of the bonding or connection become uniform and uniform. As a result, long-term reliability and operational safety are improved, especially for use in a high temperature environment. If the temperature is above a value of 360 ° C, an adverse effect on the component properties and characteristic data has an effect. The minimum temperature below which sufficient contact strength can no longer be achieved is a function of the heating time. For example, the minimum temperature for a heating time of 60 s is approximately 230 ° C. If the heating time is 10 s, the minimum temperature is approximately 320 ° C.

Die Beziehung zwischen der Temperatur und der resultierenden Bondierungskontaktfestigkeit ist in Fig. 5 dargestellt, wobei eine auf 30 s festgesetzte Erwärmungszeit zugrundegelegt wurde. Die sich in Richtung der Achse der Kontaktfestigkeit erstreckenden Balken geben die Verteilungen der resultierenden Kon­ takt- oder Kontakthaftfestigkeiten an, die den angege­ benen Temperaturen entsprechen. Die gestrichelte Linie bei 0,392 N (40 gf = 40 gram-force) zeigt die erfor­ derliche minimale Kontaktfestigkeit an. The relationship between the temperature and the resulting bonding contact strength is shown in FIG. 5, based on a heating time of 30 s. The bars extending in the direction of the axis of contact strength indicate the distributions of the resulting contact or contact adhesive strengths, which correspond to the specified temperatures. The dashed line at 0.392 N (40 gf = 40 gram-force) shows the required minimum contact strength.

Entsprechend dem obigen Ausführungsbeispiel wird die Diffusionsschicht stabilisiert und das abnorme Anwachsen der intermetallischen Verbindung verhindert. Dies ist der Fall wegen des relativ flachen, wenig tiefgehenden Bondierungskontakts nach dem Bondierungsvorgang. Mit der darauffolgen­ den Thermobehandlung wird die Bondierungskontakt­ festigkeit verbessert, so daß sowohl Haftfestigkeit als auch die Widerstandsfähigkeit des Kontakts gut sind.According to the above embodiment the diffusion layer is stabilized and that abnormal growth of the intermetallic compound prevented. This is because of the relative flat, little deep bonding contact after the bonding process. With the follow The thermal treatment is the bonding contact strength improved so that both adhesive strength as well as the resistance of the contact well are.

In einem zweiten Ausführungsbeispiel der Er­ findung dient diese Thermobehandlung nach dem Bondierungsschritt zudem dem Zweck der Ausbildung einer Schutzschicht auf der Oberfläche des bondier­ ten Bereichs. Beispielsweise wird nach der Bondierung eine Thermobehandlung in Luft bei einer Temperatur von ungefähr 300°C und für ungefähr 30 min angewandt, um eine Oxidschicht 7, wie sie in Fig. 6 gezeigt ist, auf der Oberfläche des bondierten Bereichs und auch der Oberfläche der Kugel 10 a und der Elektrode 3 aus­ zubilden, die sich jedoch insbesondere in der Zone des bondierten Bereichs erstrecken soll. Diese Oxid­ schicht 7 dient als eine Schutzschicht, um während der Benutzung des Bauelementes das Eintreten von Gasen in die Bondierungsschicht und somit das Anwachsen der intermetallischen Verbindung an dieser Bondierungs­ zwischenschicht zu verhindern. Durch diese Thermobe­ handlung wird der Bondierungskontakt stabilisiert und ein Ablösen des Drahtes wird verhindert. Damit sind Beeinträchtigungen und Verschlechterungen der Halb­ leiterbauelementkenndaten und -eigenschaften vermieden.In a second embodiment of the invention, this thermal treatment after the bonding step also serves the purpose of forming a protective layer on the surface of the bonded area. For example, after bonding, thermal treatment in air at a temperature of about 300 ° C and for about 30 minutes is applied to an oxide layer 7 , as shown in Figure 6, on the surface of the bonded area and also the surface of the ball 10 a and the electrode 3 to form, but which should extend in particular in the zone of the bonded area. This oxide layer 7 serves as a protective layer in order to prevent the entry of gases into the bonding layer and thus the growth of the intermetallic compound on this bonding intermediate layer during use of the component. This thermal treatment stabilizes the bonding contact and prevents the wire from coming off. Impairments and deteriorations in the semiconductor component characteristics and properties are thus avoided.

Anstelle der Oxidschicht kann auch eine Nitrid­ schicht als Schutzschicht ausgebildet werden. Dies kann erzielt werden, indem man die Thermobehandlung in einer Stickstoffatmosphäre durchführt. A nitride can also be used instead of the oxide layer layer can be formed as a protective layer. This can can be achieved by heat treatment in one Performs nitrogen atmosphere.  

Die Benutzung eines Kupferdrahtes ist deshalb von Vorteil, weil die Wachstumsrate des Kompounds am bondierten Bereich gering ist.The use of a copper wire is therefore beneficial because of the growth rate of the compound is low in the bonded area.

Anstelle des Kupferdrahtes können jedoch wahl­ weise auch andere Materialien wie beispielsweise Paladium, Aluminium, Silber oder deren Legierungen mit Zusatzstoffen und eine Kupferlegierung mit Zusatzstoffen verwendet werden.Instead of the copper wire you can choose other materials such as Palladium, aluminum, silver or their alloys with additives and a copper alloy with Additives are used.

Claims (11)

1. Verfahren zur Herstellung eines Halbleiterbauele­ ments, welches einen Halbleiterchip aufweist, dessen Elektrode mittels eines Metalldrahtes mit einer Leitung verbunden ist, welches Verfahren durch die folgenden Verfahrensschritte gekennzeichnet ist:
Versehen des Halbleiterchips mit einer Elektrode in einem vorbereitenden Schritt,
Bondieren eines Metalldrahtes an diese Elektrode, und
Anwendung einer solchen Thermobehandlung, daß eine Verschlechterung und Beeinträchtigung des bondierten Bereichs zwischen der Elektrode und dem Metalldraht verhindert sind.1. A method for producing a semiconductor component which has a semiconductor chip whose electrode is connected to a line by means of a metal wire, which method is characterized by the following method steps:
Providing the semiconductor chip with an electrode in a preparatory step,
Bonding a metal wire to this electrode, and
Applying such a heat treatment that deterioration and deterioration of the bonded area between the electrode and the metal wire are prevented. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß das Bondieren durch eine Kugelthermokompressions­ anheftung erzielt wird.2. The method according to claim 1, characterized, that bonding through a ball thermocompression attachment is achieved. 3. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Verfahrensschritt des Bondierens ein Erwärmen der Spitze des Drahtes zur Erzeugung einer geschmolze­ nen Kugel an der Drahtspitze und ein Anpressen dieser Kugel an die Elektrode umfaßt.3. The method according to claim 1, characterized, that the bonding step is heating the tip of the wire to produce a melted a ball on the tip of the wire and pressing it on Ball to the electrode. 4. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß das Bondieren so ausgeführt wird, daß eine Reaktion an diesem bondierten Bereich derart flach hervorgerufen wird, daß ein abnormes Anwachsen intermetallischer Ver­ bindungen an der Bondierungszwischenschicht nicht auf­ tritt. 4. The method according to claim 1, characterized, that the bonding is carried out so that a reaction caused so flat on this bonded area is that an abnormal increase in intermetallic ver bonds on the bonding intermediate layer occurs.   5. Verfahren nach Anspruch 4, dadurch gekennzeichnet, daß die Thermobehandlung unter Bedingungen durch­ geführt sind, die so geartet sind, daß sie die Bondierungshaftfestigkeit verbessern.5. The method according to claim 4, characterized, that the thermal treatment is carried out under conditions are led, which are such that they are the Improve bond strength. 6. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß die Thermobehandlung bei einer Temperatur durch­ geführt wird, die nicht höher als eine Temperatur ist, oberhalb derer die kennzeichnenden Eigenschaften des Halbleiterbauelementes nachteilig beeinflußt werden.6. The method according to claim 5, characterized, that the thermal treatment at a temperature which is not higher than a temperature above which the characteristic properties of the Semiconductor device are adversely affected. 7. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß die Thermobehandlung bei einer nicht über unge­ fähr 360°C liegenden Temperatur durchgeführt wird.7. The method according to claim 5, characterized, that the thermal treatment in a not over at a temperature of 360 ° C. 8. Verfahren nach Anspruch 7, dadurch gekennzeichnet, daß die Thermobehandlung bei einer Temperatur, die nicht unter ungefähr 230°C liegt, und für eine Zeit­ dauer von ungefähr 5 bis 60 s durchgeführt wird.8. The method according to claim 7, characterized, that the thermal treatment at a temperature that is not below about 230 ° C, and for a time duration of approximately 5 to 60 s. 9. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Thermobehandlung in einer eine Schutzschicht hervorrufenden Atmosphäre ausgeführt wird, um eine Schutzschicht auf der Oberfläche des bondierten Bereichs zwischen der Elektrode und dem Metalldraht auszubilden.9. The method according to claim 1, characterized, that the thermal treatment in a protective layer evoking atmosphere is carried out to a Protective layer on the surface of the bonded area form between the electrode and the metal wire. 10. Verfahren nach Anspruch 9, dadurch gekennzeichnet, daß die Schutzschicht eine Oxidschicht oder eine Nitridschicht ist. 10. The method according to claim 9, characterized, that the protective layer is an oxide layer or a Is nitride layer.   11. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Thermobehandlung in Luft bei einer Temperatur von ungefähr 300°C für ungefähr 30 min durchgeführt wird.11. The method according to claim 1, characterized, that the thermal treatment in air at a temperature from about 300 ° C for about 30 minutes becomes.
DE19863641524 1985-12-10 1986-12-05 Method of fabricating a semiconductor component Ceased DE3641524A1 (en)

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EP0365919A2 (en) * 1988-10-28 1990-05-02 International Business Machines Corporation Method of bonding gold or gold alloy wire to solder
DE3938152A1 (en) * 1989-01-13 1990-07-26 Mitsubishi Electric Corp METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
DE4021031A1 (en) * 1990-01-10 1991-07-11 Mitsubishi Electric Corp SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP1187200A2 (en) * 2000-09-01 2002-03-13 Nec Corporation Semiconductor device with an improved bonding pad structure
EP2339622A1 (en) * 2009-12-23 2011-06-29 Nxp B.V. Wirebonding Process

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0365919A2 (en) * 1988-10-28 1990-05-02 International Business Machines Corporation Method of bonding gold or gold alloy wire to solder
EP0365919A3 (en) * 1988-10-28 1991-07-24 International Business Machines Corporation Method of bonding gold or gold alloy wire to solder
DE3938152A1 (en) * 1989-01-13 1990-07-26 Mitsubishi Electric Corp METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
DE4021031A1 (en) * 1990-01-10 1991-07-11 Mitsubishi Electric Corp SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP1187200A2 (en) * 2000-09-01 2002-03-13 Nec Corporation Semiconductor device with an improved bonding pad structure
EP1187200A3 (en) * 2000-09-01 2004-03-31 NEC Compound Semiconductor Devices, Ltd. Semiconductor device with an improved bonding pad structure
EP2339622A1 (en) * 2009-12-23 2011-06-29 Nxp B.V. Wirebonding Process

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