JPS55118643A - Wire bonding process - Google Patents

Wire bonding process

Info

Publication number
JPS55118643A
JPS55118643A JP2593379A JP2593379A JPS55118643A JP S55118643 A JPS55118643 A JP S55118643A JP 2593379 A JP2593379 A JP 2593379A JP 2593379 A JP2593379 A JP 2593379A JP S55118643 A JPS55118643 A JP S55118643A
Authority
JP
Japan
Prior art keywords
bonding
ball bond
ball
bond
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2593379A
Other languages
Japanese (ja)
Inventor
Kenji Miyajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2593379A priority Critical patent/JPS55118643A/en
Publication of JPS55118643A publication Critical patent/JPS55118643A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48507—Material at the bonding interface comprising an intermetallic compound
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a semiconductor device which has large bonding strength and a high reliability by conducting a ball bonding in advance on an aluminum surface and stitch bonding on the ball bond. CONSTITUTION:A ball bond 3 is formed in advance on an aluminum 2 at predetermined position for the second bonding. Then, a ball bond 4 is formed on an aluminum surface 1 at predetermined position for the first bonding, and a stitch bond 5 is formed on the first ball bond 3. Thus, both the aluminum surfaces 1 and 2 become equal to the ball bond by the bonding wire, and slight Au-Al intermetallic compound is produced at both the bonds. Accordingly, it can increase the bonding strength at the second bonding portion.
JP2593379A 1979-03-06 1979-03-06 Wire bonding process Pending JPS55118643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2593379A JPS55118643A (en) 1979-03-06 1979-03-06 Wire bonding process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2593379A JPS55118643A (en) 1979-03-06 1979-03-06 Wire bonding process

Publications (1)

Publication Number Publication Date
JPS55118643A true JPS55118643A (en) 1980-09-11

Family

ID=12179570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2593379A Pending JPS55118643A (en) 1979-03-06 1979-03-06 Wire bonding process

Country Status (1)

Country Link
JP (1) JPS55118643A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442967A (en) * 1981-03-20 1984-04-17 U.S. Philips Corporation Method of providing raised electrical contacts on electronic microcircuits
JPH02114545A (en) * 1988-10-24 1990-04-26 Toshiba Corp Connection of wire bonding
US5060843A (en) * 1989-06-07 1991-10-29 Nec Corporation Process of forming bump on electrode of semiconductor chip and apparatus used therefor
US5124277A (en) * 1990-01-10 1992-06-23 Mitsubishi Denki Kabushiki Kaisha Method of ball bonding to non-wire bonded electrodes of semiconductor devices
US5292050A (en) * 1991-12-06 1994-03-08 Kabushuki Kaisha Toshiba Wire bonder
US5295619A (en) * 1992-05-22 1994-03-22 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
WO1994022166A1 (en) * 1993-03-19 1994-09-29 National Semiconductor Corporation A method of and arrangement for bond wire connecting together certain integrated circuit components
US5431329A (en) * 1993-05-21 1995-07-11 Rohm Co., Ltd. Method of forming a ball end for a solder wire
EP0753891A2 (en) * 1995-06-28 1997-01-15 Texas Instruments Incorporated Low loop wire bonding
US6426563B1 (en) 1999-06-28 2002-07-30 Sumitomo Electric Industries Semiconductor device and method for manufacturing the same
US7067413B2 (en) 2003-09-04 2006-06-27 Samsung Electronics Co., Ltd. Wire bonding method, semiconductor chip, and semiconductor package
US7404513B2 (en) 2004-12-30 2008-07-29 Texas Instruments Incorporated Wire bonds having pressure-absorbing balls
US7408119B2 (en) * 2003-10-15 2008-08-05 Agilent Technologies, Inc. Electrical interconnection for high-frequency devices

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442967A (en) * 1981-03-20 1984-04-17 U.S. Philips Corporation Method of providing raised electrical contacts on electronic microcircuits
JPH02114545A (en) * 1988-10-24 1990-04-26 Toshiba Corp Connection of wire bonding
US5060843A (en) * 1989-06-07 1991-10-29 Nec Corporation Process of forming bump on electrode of semiconductor chip and apparatus used therefor
US5124277A (en) * 1990-01-10 1992-06-23 Mitsubishi Denki Kabushiki Kaisha Method of ball bonding to non-wire bonded electrodes of semiconductor devices
US5292050A (en) * 1991-12-06 1994-03-08 Kabushuki Kaisha Toshiba Wire bonder
US5395037A (en) * 1992-04-22 1995-03-07 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
US5295619A (en) * 1992-05-22 1994-03-22 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
WO1994022166A1 (en) * 1993-03-19 1994-09-29 National Semiconductor Corporation A method of and arrangement for bond wire connecting together certain integrated circuit components
US5431329A (en) * 1993-05-21 1995-07-11 Rohm Co., Ltd. Method of forming a ball end for a solder wire
EP0753891A2 (en) * 1995-06-28 1997-01-15 Texas Instruments Incorporated Low loop wire bonding
EP0753891A3 (en) * 1995-06-28 1999-03-31 Texas Instruments Incorporated Low loop wire bonding
US6426563B1 (en) 1999-06-28 2002-07-30 Sumitomo Electric Industries Semiconductor device and method for manufacturing the same
US6784090B2 (en) 1999-06-28 2004-08-31 Sumitomo Electric Industries, Ltd. Semiconductor device and method for manufacturing the same
US7067413B2 (en) 2003-09-04 2006-06-27 Samsung Electronics Co., Ltd. Wire bonding method, semiconductor chip, and semiconductor package
US7408119B2 (en) * 2003-10-15 2008-08-05 Agilent Technologies, Inc. Electrical interconnection for high-frequency devices
US7404513B2 (en) 2004-12-30 2008-07-29 Texas Instruments Incorporated Wire bonds having pressure-absorbing balls

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