JP3133341B2 - 半導体ダイのための接触ピンおよび相互接続部を形成する方法 - Google Patents

半導体ダイのための接触ピンおよび相互接続部を形成する方法

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Publication number
JP3133341B2
JP3133341B2 JP08515500A JP51550096A JP3133341B2 JP 3133341 B2 JP3133341 B2 JP 3133341B2 JP 08515500 A JP08515500 A JP 08515500A JP 51550096 A JP51550096 A JP 51550096A JP 3133341 B2 JP3133341 B2 JP 3133341B2
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Prior art keywords
wire
substrate
contact
forming
pad
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JP08515500A
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JPH10507878A (ja
Inventor
エム． ファーンワース，ウォリン
アクラム，サルマン
ジー． ウッド，アラン
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マイクロン、テクノロジー、インコーポレーテッド
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    • Y10T29/49147—Assembling terminal to base
    • Y10T29/49149—Assembling terminal to base by metal fusion bonding

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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は全体として半導体の製造に関するものであ
り、更に詳しくいえば、能動半導体ダイに柔軟な金属接
触ピンおよびシリコン相互接続部を形成する方法に関す
るものである。接触ピンは、既知の良いダイの製造中に
パッケージされていないダイを試験するためにとくに適
する。
裸の半導体ダイすなわちパッケージされていない半導
体ダイは電子装置の製造において広く使用されている。
既知の良いダイ（KGD）は、パッケージされている同等
の製品と同じ品質および同じ信頼性を有する。既知の良
いダイに対する需要により、パッケージされていない半
導体ダイを試験するための試験手順が開発されるように
なった。
パッケージされていない半導体ダイの試験およびバー
ンインのために、キャリヤが従来の１チップパッケージ
を試験プロセス中に置く。キャリヤは、ダイと外部試験
回路を一時的に電気接続できるようにする相互接続要素
を通常含む。また、そのようなキャリヤは、ダイに損傷
を与えることなしに必要な試験手順を行えるようにしな
ければならない。台上の接合パッドが試験手続中に損傷
をとくに受けやすい。
最近、半導体製造者達は個別の、パッケージされてい
ないダイを試験するためのキャリヤを開発した。種々の
種類のキャリヤが、Corbett他に付与された米国特許第4
899107号、Wood他に付与されて、Micron Technology社
に譲渡された米国特許第53028950号、Elder他に付与さ
れた米国特許第5123850号、Malhi他に付与されて、Texa
s Instruments社に譲渡された米国特許第5073117号に
開示されている。
キャリヤの設計において考慮すべき重要な事柄の１つ
は、ダイにおける接触場所に一時的に電気的接続を行う
ための方法である。それらの接触場所は、ダイの表面上
に配置されている接合パッドまたは試験パッドなどのパ
ッドであるのが普通である。相互接続部は、ダイパッド
に物理的に接触して、それと電気的接続を行う接触構造
を含む。接触構造の例はワイヤ、針、およびバンプを含
む。電気的接触を行うための機構は、ダイパッドのもと
もとあった酸化物を尖った点で突き刺すこと、もともと
あった酸化物をバンプで破壊すなわちみがき取ること、
またはダイパッドを横切って動くようにされた接点でも
ともとあった酸化物をかき取ることを含む。
それら種々の接触構造は、試験中のダイパッドの接合
パッドに電気的接続を行うように設計されている。この
接続は低抵抗値で、オーム性であることが好ましい。低
抵抗値とは無視できる抵抗値を意味する。オーム性接続
は、接続部の両端に現れる電圧が両方向の電流の流れに
比例するような接続である。過去においては、接合パッ
ドに低抵抗値のオーム性接続を行い、しかもパッドが受
ける損傷を最小に押さえることは困難であった。接合パ
ッドの厚さは約１μだけにすることができ、したがっ
て、損傷を受けやすい。一般に、上記の各接触構造は接
合パッドの金属被覆を移動させて、パッドに損傷を与え
る。
低抵抗値のオーム性接続を形成することに加えて、接
触構造の性質が柔軟であることも望ましい。時には接合
パッドの構成が傾斜した表面形状すなわち粗い表面形状
を呈することがある。その理由は、キャリヤ内でのダイ
の装着構成、またはダイの表面を横切る接合パッドの不
均一な形状によることがある。したがって、接合パッド
の垂直場所に合致するようにされた柔軟な接点に対する
相互接続部を形成すると有利である。類似のやり方で、
接点を再使用するために接点が元の位置へ戻れるように
する弾性をその接点が持つことが望ましい。
上記のことから、半導体ダイを試験および製造するた
めの改良した接点構造に対する需要がこの技術に存在す
る。したがって、本発明の目的は、パッケージされてい
ない半導体ダイを試験するために適当な金属接触ピンを
得ることである。
本発明の別の目的は、一時的に相互接続するための接
点を形成するために使用でき、かつ能動半導体ダイ上に
接点を形成するためにも使用できる改良した接点構造を
得ることである。
本発明の更に別の目的は、柔軟で、弾性を持ち、かつ
接合パッドに一時的な電気的接続を行うようにされ、し
かもダイに損傷を与えることがない、改良した接触構造
を得ることである。
本発明のその他の目的、諸利点、および諸性能は説明
が進むにつれて一層明らかになるであろう。
本発明に従って、改良した接触構造、および接触構造
を形成するための方法が得られる。接触構造は、簡単に
述べれば、基板に取り付けられた金属接触ピンを有す
る。本発明の第１の実施の形態では、基板はシリコン相
互接続部であって、接触ピンは導電線に電気的に通じる
ようにして相互接続部に取り付けられる。第２の実施の
形態では、基板は能動半導体ダイであって、接触ピンが
ダイ上のダイパッド（たとえば、接合パッド、試験パッ
ド）に取り付けられる。いずれの場合にも、接触ピン
は、低抵抗値およびオーム性である接続する接触場所に
電気的接続を形成するのに適当である。
接触ピンが接触する相手方の接触場所に偏倚させられ
て電気的接続を行うにつれて、曲がることができるよう
にする柔軟な構造に接触ピンが形成される。例として、
接触ピンを持つ相互接続部と、平らな接合パッドを有す
るダイとを一緒に試験キャリヤ内に置くことができる。
相互接続部とダイが一緒にキャリヤ内で偏倚させられる
につれて、相互接続部上の接触ピンがダイ上の接合パッ
ドとの電気的接続を形成する。接触ピンの柔軟な構造の
ために、接続し合うトポグラフィーの変化を曲りにより
吸収できるようにされる。柔軟な構造は接触ピンのため
のたわむことができるばねセグメント、または接触ピン
のための曲げられた装着構成を含むことができる。ま
た、電気的接続の形成を容易にするために接触ピンは端
部上に接触ボールを含むことができる。
半導体ダイのダイパッドまたは相互接続部の基板に接
触ピンを取り付けるために２つの好適な方法がある。そ
れらの取り付け方法はワイやボンディングと溶接であ
る。取り付け作業中は、接触ピンにばねセグメントなど
の柔軟な構造を、局部加熱および局部曲げを用いて形成
する。ワイヤボンダまたは溶接器具と共にレーザ作業で
局部加熱および局部曲げを行うことができる。取り付け
作業中に接触ピンの加熱および曲げを行うために、加熱
した毛細管ワイヤ送り装置を用いることもできる。
図1A〜図1Eはワイヤボンディング法を用いて本発明に
従って半導体ダイ上に接触ピンを形成する工程を示す概
略横断面図である。
図２は柔軟な接触構造を得るために半導体ダイにある
角度でワイヤボンドされている接触ピンの概略横断面図
である。
図3Aはばねセグメントとして形成した柔軟な構造を有
する接触ピンを示す略図である。
図3Bは図3Aの接触ピンを形成するための、レーザとワ
イヤボンディング工具を用いる加熱法および成形法を示
す略図である。
図3Cは図3Aの接触ピンを形成するための、加熱した毛
細管工具を用いる加熱法および成形法を示す略図であ
る。
図4Aおよび図4Bはばねセグメントとして形成した柔軟
な構造を持つ他の実施の形態の接触ピンを示す。
図5A〜図5Eは溶接法を用いて本発明に従って半導体ダ
イ上に接触ピンを形成する工程を示す概略横断面図であ
る。
図6Aは本発明に従って形成した接触ピンを有する相互
接続部の斜視図である。
図6Bは図6Aの一部の拡大図である。
図6Cは電気的接続を行うために半導体ダイ上の平らな
接合パッドに係合する接触ピンの拡大横断面図である。
図7Aは本発明に従って形成した接触ピンを有する相互
接続部のばねセグメントを持つ一部を示す略図である。
図7Bは本発明に従って形成した接触ピンを有し、かつ
柔軟な構造を得るために相互接続部の基板に関してある
角度で装着された、相互接続部の一部を示す略図であ
る。
図８は本発明に従って形成した接触ピンの２つの異な
る実施の形態を有する相互接続部の斜視図である。
ここで図1Aないし図1Eを参照する。それらの図には能
動半導体ダイ10の上に接触ピンを形成する本発明の方法
が示されている。図1Aに示すように、半導体ダイ10はシ
リコン基板12を含む従来のダイである。基板12の上に集
積回路が形成されている。接合パッド14が集積回路に電
気的に通じる。製造作業中にダイ10をウェハーの上に製
造する。そのウェハーの上には他のダイが多数存在す
る。
ダイ10の接合パッド14は不動体層（図示せず）内に埋
め込まれる。接合パッド14は通常は、一辺が約100μｍ
の、多角形（たとえば、正方形）の金属パッドである。
それらのパッドは約50μｍないし100μｍの間隔で分離
される。通常は、接合パッド14は金属化法を用いてアル
ミニウム（Al）で形成する。半導体ダイ上に接合パッド
を形成するためにアルミニウム以外の金属を時に使用す
るが、アルミニウムが最も用いられている。ダイ上の集
積回路と外界との間で電気的接続を行うために、アルミ
ニウム接合パッド14を使用する。必要に応じて、ワイヤ
ボンディング、テープ自動化ボンディングまたはフリッ
プチップボンディングなどの種々の方法を用いて、接合
パッドへの電気的接続を行う。本発明により、柔軟な構
造で形成された接触ピンを用いてこの接続が行えるよう
にされる。
最初に図1Bに示すように、ダイ10を含んでいるウェハ
ー上にフォトレジスト層16を回転付着させる。フォトレ
ジスト層16を露光し、現像し、エッチングして開口部18
を持つマスクを形成する。開口部18を接合パッド14に整
列させる。開口部18の周辺形状は接合パッド14の周辺形
状と同じである。
次に、図1Cに示すように、銅などの導電材料で形成さ
れた中間パッド20を開口部18内と、接合パッド14の上と
に付着させる。中間パッド20の厚さは１μｍないし50μ
ｍのオーダーであって、接合パッド14とほぼ同じ寸法で
ある。中間パッド20の目的は、ニッケルなどのはんだ付
けできる材料で形成されたはんだパッド22（図1D）をア
ルミニウム接合パッド14に取り付けることができるよう
にすることである。はんだパッド22をアルミニウム接合
パッド14に直接付着できるが、銅などの材料で形成され
た中間パッド20がアルミニウム接合パッド14に一層容易
に接合する。
化学電解質めっき法を用いて中間パッド20を付着す
る。銅（Cu）、ニッケル（Ni）、金（Au）およびパラジ
ウム（Pd）を含む各種の金属を、金属イオンと還元剤を
含む水溶液を用いる無電解付着で付着することができ
る。付着される金属で貫通穴を充填することにより接点
を形成するために、化学めっきをしばしば使用する。例
として、Al上にCuを付着するためのこの応用では、水を
ベースとする溶液がCu＋＋イオンとアスコルビン酸還元
剤を含む。中間パッド20を接合パッド14の上に、フォト
レジスト層16の厚さより薄い厚さまでめっきする。これ
によって同じ開口部18を以後のめっき法に使用できるよ
うにされる。
次に、図1Dに示すように、銅パッド20の上にはんだパ
ッド22を付着する。はんだパッド22は化学めっき法を用
いて付着することもできる。例として、Ni＋イオンとジ
メチル・アミノボラン還元剤を含む水溶液を用いてニッ
ケルはんだパッド22を付着することができる。はんだパ
ッド22の厚さは１μｍから50μｍまでで、それの外周形
状は中間パッド20およびアルミニウム接合パッド14に一
致する。はんだパッド22は、ニッケル、ニッケル合金ま
たは金などの容易にはんだ付けできる材料で形成するこ
とができる。
次に、図1Eに示すように、接触ピン24をはんだパッド
22に取り付ける。接触ピン24は厚さが約１ないし５ミル
のワイヤで形成する。接触ピン24の適当な材料は銅、
金、ニッケル合金およびばね鋼合金を含む。ワイヤボン
ディング装置を用いて接触ピン24をはんだパッド22に取
り付ける。接触ピン24をはんだパッド22に直接接合し、
またははんだ材料25をワイヤボンディング作業中に使用
することができる。
ワイヤボンディング装置はこの技術で周知である。ワ
イヤボンディング装置はペンシルバニア州Horsham所在
のKulicke and Soffa社および日本の三菱電機によっ
て製造されている。Kulicke他に付与された米国特許第3
894671号およびフジモト他に付与された米国特許第4877
173号が代表的なワイヤボンディング装置を開示してい
る。
ワイヤボンディング作業中に、接触ピン24のベース25
（図1E）を形成するワイヤの端部を放電または水素トー
チで溶融状態まで加熱する。これにより融けた金属のボ
ールが接触ピン24のベース25上に生ずる。その後で、融
けたボールをボンディング工具ではんだパッド22に押し
付ける。融けたボールをはんだパッド22に押し付けてい
る間に超音波振動も融けたボールを加える。こうすると
ワイヤがはんだパッド22に機械的に接合される。その後
でワイヤを電気的に開く、すなわち切断して接触ピン24
を形成する。
ワイヤボンディング作業に続いて、フォトレジスト層
16を基板12から除去することができる。フォトレジスト
の形成に応じて、適当な湿式化学除去剤を用いて除去を
行うことができる。また、その後で、保護層（図示せ
ず）を基板12に付着して基板の表面を保護し、接触ピン
24の動きから接触ピン基板境界面にストレスが加えられ
ることを制限することができる。
図２を参照して、接触ピン24Aを基板12の平面に関し
て鋭角で配置することにより柔軟な構造を達成できる。
したがって、接触ピン24は、係合する部品（たとえば、
印刷回路板上の接点）に対してバイアスされるために、
矢印26で示すように曲がることができる。接触ピン24A
は、ワイヤボンディング装置のボンディング工具の適当
な操作によりある角度で配置することができる。
図3Aと図3Bを参照する。それらの図示の実施の形態に
おいては、接触ピン24Bのための他の柔軟な接触構造を
形成するための技術を示す。図3Aに示すように、接触ピ
ン24Bはばねセグメント34として形成された柔軟な構造
を含む。また、接触ピン24Bは端部に接触ボール32を含
む。接触ボール32は、相互接続部またはその他の基板
（たとえば、回路板）上に形成されている、パッドなど
の、係合する接触場所との電気的接続を容易にする。
図3Bは、柔軟なばねセグメント34を持つ成形された接
触ピン24Bを形成するための方法を示す。自動ワイヤボ
ンディング装置では、ｘ、ｙ、ｚ方向のワイヤボンディ
ング工具26の動きはコンピュータ制御の下にある。適切
なソフトウエアを用いて、ワイヤボンディング工具26を
ある経路上で動かして、ばねセグメント34（図3A）を形
成するためにある長さのワイヤを操作することができ
る。ばねセグメント34は図示のように平らなｓ字形セグ
メントを含み、またはらせん状によじられた多数のコイ
ルを形成することができる。ワイヤボンディング工具26
が指定された経路を通ってある長さのワイヤを動かすと
同時に、レンズ30により焦点を合わされているレーザ28
がワイヤの局部加熱を開始する。そうするとワイヤ材料
が軟化されるから、そのワイヤを希望の形に形成するこ
とができる。冷却するとその形は固定される。次に、レ
ーザ38または放電装置あるいは独立した切断部材を操作
してワイヤを切断する。接触ピン24Bの端部を加熱する
ためにレーザ28を用いて接触ボール32（図3A）を形成
し、かつ融けたボールを形成する。あるいは、接触ピン
24Bの端部に接触ボール（図3A）を形成するために、放
電装置または水素トーチを使用することができる。
図3Cは加熱毛細管ワイヤ送り装置を用いて、ある長さ
のワイヤを加熱および成形するための他の技術を示す。
この技術は、図3Bを参照して説明した技術と本質的に同
じである。この場合には、加熱要素31を有する毛細管工
具33がある経路中を動かされて、成形のための長さのワ
イヤを取り扱う。１つの適当な加熱毛細管工具38が、ペ
ンシルバニヤ州Horsham、Prudenntial Road 507,1900
4,所在のKulicke and Soffa社によって製造されてい
る。それはワイヤボンディング装置の部品である。
図4Aおよび図4Bは別の実施の形態の接触ピン24Cと24D
を示す。図4Aでは、接触ピン24Cは、多数のｓ形セグメ
ントを有するばねセグメント38で形成する。図4Bでは、
接触ピン24Dは、ベースが広い多数のｓ形セグメントを
有するばねセグメント40で形成する。各場合に、ばねセ
グメント38は図示のように平らにでき、またはらせんよ
じれで形成する。
次に図5A〜図5Eを参照する。それらの図は半導体ダイ
10の上に接触ピンを形成するための方法の他の実施の形
態を示す。この他の実施の形態の方法は接触ピン24W
（図5E）を、ワイヤボンディングではなくて溶接を用い
てダイ10の接合パッド14に取り付ける。
最初に、基板12と半導体ダイ10の接合パッド14との上
に短絡層36をブランケット付着する。短絡層36は銅など
の高導電性材料で形成することが好ましい。他の適当な
材料にはニッケルやアルミニウムが含まれる。短絡層
は、電解めっき、化学蒸着またはスパッタリングなどの
適当な金属付着法を用いて付着する。短絡層36は溶接電
流の電気的経路として機能する。これは、溶接電流によ
り悪影響を受けることがある集積回路から溶接電流をシ
ャントして遠ざけるのを支援する。
次に、図5Bに示すように、フォトレジスト層42を現像
し、エッチングして、開口部44のパターンを持つマスク
を形成する。各開口部44はフォトレジスト層42を通じて
短絡層36まで伸び、ダイ12の接合パッド14に整列させ
る。
次に、図5Cに示すように、開口部44内と、短絡層36の
上とに溶接パッド46を付着する。溶接パッド46は前記し
たように化学付着法を用いて付着する。溶接パッド46は
容易に溶接できる材料で形成する。適当な材料にはニッ
ケル、金および銅が含まれる。
次に図5Dに示すように、溶接法を用いて接触ピン24D
を溶接パッド46に溶接する。いくつかの実施の形態で
は、溶接パッド46は要しない。その理由は、接触ピン24
Wを短絡層に直接溶接できるからである。半導体製造の
ための溶接装置の構造は、ワイヤボンディング装置に類
似し、同じ目的のために使用する。適当な溶接装置が前
記ワイヤボンダ製造者により製造されている。電気回路
と、トーチ部品と、加工物ホルダーの接地とを少し変更
することにより、そのようなワイヤボンディング装置が
前記図3Dおよび図3Cで概略説明した諸機能（すなわち、
加熱および成形）を実行するためにワイヤボンディング
装置を改造することができる。
一般に、溶接装置は、２つの金属の境界面に溶融物質
を形成するのに必要な熱を発生するために電流を使用す
る。ここでの応用では、溶接電流は接触ピン24Wを通っ
て溶接パッド46へ流れる。ダイ10上に形成されている溶
接パッド６の全てを通じて電流を流すために、短絡層36
は閉じたループを提供する。溶接電流は各接触ピン24W
と、それのそれぞれの溶接パッド46との間の境界面に融
けた金属を生じて、それらの要素を一緒に接合する。
次に図5Eに示すように、フォトレジスト層42を除去す
る。また、短絡層にパターンを描き、エッチングしてベ
ースパッド48が形成されるようにする。これにより各ア
ルミニウム接合パッド14の上に積み重なった構造が形成
される。その構造はベースパッド48と、溶接パッド46
と、溶接された接触ピン24Wとを含む。また、基板12の
表面を保護し、接触ピンと溶接点との間の境界面に接触
ピン24Wの動きから加えられるストレスを制限するため
に、保護層（図示せず）を付着することができる。溶接
作業中は、接触ピン24Wを曲げて前記した柔軟な構造を
形成することができる。また、接触ピン24Wを形成する
ある長さのワイヤの加熱と動きとを同時に行うことによ
り、ばねセグメントを含む柔軟な構造をほぼ前記したよ
うにして形成することができる。
次に図6Aと図6Bを参照する。それらの図は、本発明に
従って形成した接触ピン56を持つ相互接続部50を示す。
相互接続部50は基板52と、製造と、後で相互接続部50を
使用する助けとして、基板52上に形成された回路線のパ
ターンとを含む。導電性金属を付着し、それにパターン
を描くことにより回路線54を形成することができる。整
列基準53のパターンも基板52上に形成する。
基板52の好適な材料は、シリコンダイの熱膨張率と同
じ熱膨張率を有するシリコンである。他の適当な材料に
はセラミック、およびサファイア上のシリコンが含まれ
る。相互接続部50は裸の半導体ダイすなわちパッケージ
していない半導体ダイを試験するためのキャリヤに使用
するようにされる。Wood他に付与された「パッケージし
ていないダイのための個別ダイ・バーンイン（Discrete
Die Burn−In For Nonpackaged Die）」という名
称の米国特許第5302891号が相互接続部を使用するキャ
リヤを開示している。
使用時には、相互接続部50を試験キャリヤの内部にダ
イに沿って置き、相互接続部50上に形成されている接触
ピン56をダイ上の接合パッドに接触させて置き、オーム
性の接触を行う。その後で相互接続部の回路線54を外部
試験回路に電気的に通じさせて置く。例として、過路線
54を試験回路に接続するキャリヤ上の外部コネクタにワ
イヤボンドすることができる。
図6Bに示すように、接触ピン56を回路線54上に形成す
る。回路線54は厚膜金属などの導電性材料で形成する。
その材料を基板52の上に付着したら（たとえば、スクリ
ーン印刷で）パターンを描く。図6Cに示すように、接触
ピン56はｃ形セグメント64を含む。また、接触ピン56は
ベース部68を含む。そのベース部は回路線54と、試験中
のダイの接合パッド70に接続するようにされた先端部66
とに取り付ける。接触ピン56は、ワイヤボンディング法
またははんだ法を用いて、ほぼ前記したようにして形成
することができる。接触ピンの寸法の例は直径が25.4〜
127ミクロン（１〜５ミル）、高さが76.2〜254ミクロン
（３〜10ミル）といったようなものである。
次に図7A、図7Bを参照する。それらの図には本発明に
従って形成した、接触ピンを有する相互接続部の別の実
施の形態を示す。図7Aで、相互接続部50Aはシリコン基
板52Aと、回路線54Aと、接触ピン60とを含む。接触ピン
60Aはほぼ前記したワイヤボンディング法を用いて回路
線54Aに形成する。接触ピン60は、回路線54Aに取り付け
られたベース部76と、ばねセグメント72と、試験中の接
合パッドに接触するために端部に形成された接触ボール
62とを含む。ボール62は、前記したように、ガス炎（た
とえば、水素ガス）または放電を用いて形成する。
図7Bを参照する。相互接続部50Bはシリコン基板52B
と、回路線54Bと、接触ピン60Bとを含む。また、接触ピ
ン60Bはベース部78と、試験中の接合パッドに接触する
ための接触ボール62Bとを含む。この場合には、接触ピ
ン60Bを鋭角で基板52Bに取り付けることにより、柔軟な
構造が達成される。いいかえると、接触ピン60Bの軸線
を基板52Bの面に関して鋭角を成して配置する。更に、
接触ピン60Bは、回路線54Bに直接取り付けるのではなく
て、回路線54Bに形成されている接合場所74を介して回
路線に取り付ける。接合場所74は導電層であって、ニッ
ケルなどの金属が好ましい。その接合場所74は回路線54
Bの上にめっきすなわち付着する。前と同様に、接触ボ
ール62Bはガス炎または放電を用いて形成する。
図８を参照する。相互接続部50Cはシリコン基板52C
と、基板52C上に形成された回路線54Cと、回路線54C上
に形成された２種類の接触ピン56と58とを含む。接触ピ
ン56については以前に説明した。接触ピン58はソケット
すなわち雌部材に接続するようにされたまっすぐなピン
である。試験中のダイのための試験キャリヤに相互接続
部50Cを使用すると、接触ピン56をダイ上の接触場所に
接触して置く。接触ピン58を外部試験回路に接触して置
く。
したがって、本発明は、能動半導体ダイ上の接点とし
て、またはパッケージされていない半導体ダイを試験す
るために有用な相互接続部上の接点として使用するため
に適当な接触ピンを形成するための方法を提供するもの
である。接触ピンは、係合する部品上の接点場所に電気
的接続を行っている間に、曲りを行えるようにする柔軟
な構造を含むのが好ましい。
以上本発明を好適な実施の形態について説明したが、
ここで表されている発明の概念の代わりの実施の形態が
以下の請求の範囲の中に含まれることを意図するもので
ある。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 ウッド，アラン ジー. アメリカ合衆国アイダホ州、ボーイズ、 イー．バセイルズ、コート、1366 (56)参考文献 特開 平４−65137（ＪＰ，Ａ) 特開 平１−257341（ＪＰ，Ａ) 特開 平４−240739（ＪＰ，Ａ) 特開 昭61−125027（ＪＰ，Ａ) 特開 平６−338540（ＪＰ，Ａ) 米国特許4667219（ＵＳ，Ａ) 国際公開90／11629（ＷＯ，Ａ１) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 301 H01L 21/60 311

Claims (37)

    (57)【特許請求の範囲】
  1. 【請求項１】半導体ダイ上の接触場所に電気的に接続す
    るようにされた接触構造を相互接続部上に形成する方法
    であって、 基板を用意する工程と、 ワイヤの一端を基板に取り付ける工程と、 ワイヤを加熱して柔軟な構造に成形する工程と、 ワイヤを切断して、先端が自由端である接触ピンを形成
    する工程と、 を備える、接触構造を相互接続部上に形成する方法。
  2. 【請求項２】請求項１記載の方法であって、基板へのワ
    イヤの取付けをワイヤボンディングで行う方法。
  3. 【請求項３】請求項１記載の方法であって、基板へのワ
    イヤの取り付けを溶接で行う方法。
  4. 【請求項４】請求項１記載の方法であって、ワイヤの加
    熱と成形とは、レーザと、ワイヤを所定の形に曲げるた
    めに操作するワイヤボンダ工具とにより行う方法。
  5. 【請求項５】請求項１記載の方法であって、ワイヤの加
    熱と成形を加熱した毛細管で行う方法。
  6. 【請求項６】請求項１記載の方法であって、ばねセグメ
    ントを含むようにワイヤを成形する方法。
  7. 【請求項７】請求項１記載の方法であって、ワイヤをそ
    れの先端部における接触ボールで成形する方法。
  8. 【請求項８】半導体ダイ上の接触場所に電気的接続を行
    うようにされた接触ピンを相互接続部のために形成する
    方法であって、 基板を形成する工程と、 基板に一端が取り付けられて、その後で切断するワイヤ
    で形成した、先端が自由端である金属ピンを、導電線に
    電気的に通じて基板上に形成する工程と、 基板に取り付けたワイヤを加熱および成形して柔軟なば
    ねセグメントを形成する工程とを備える、接触ピンを相
    互接続部のために形成する方法。
  9. 【請求項９】請求項８記載の方法であって、柔軟なばね
    セグメントがｃ形である方法。
  10. 【請求項１０】請求項８記載の方法であって、柔軟なば
    ねセグメントがｓ形である方法。
  11. 【請求項１１】請求項８記載の方法であって、ばねセグ
    メントはベースが広い方法。
  12. 【請求項１２】請求項８記載の方法であって、基板の面
    に関して鋭角でワイヤを基板に取り付ける方法。
  13. 【請求項１３】請求項８記載の方法であって、ワイヤの
    長さの端部に接触ボールを形成する工程を更に備える方
    法。
  14. 【請求項１４】請求項８記載の方法であって、ワイヤを
    基板上に形成されている接合場所に接合することにより
    ワイヤを基板に取り付ける方法。
  15. 【請求項１５】請求項８記載の方法であって、ワイヤを
    溶接により基板に取り付ける方法。
  16. 【請求項１６】半導体ダイ上の接触場所に電気的接続を
    行うようにされた接触ピンを相互接続部のために形成す
    る方法であって、 基板を形成する工程と、 基板上に導電線を形成する工程と、 基板に一端が接合されて、その後で切断するワイヤで形
    成した、先端が自由端である金属ピンを、導電線に電気
    的に通じて基板上に形成する工程と、 基板に接合したワイヤを加熱および成形して柔軟なばね
    セグメントを有する、先端が自由端である金属ピンを形
    成する工程とを備える、接触ピンを相互接続部のために
    形成する方法。
  17. 【請求項１７】請求項16記載の方法であって、レーザで
    ワイヤを加熱しながら、ワイヤボンディング工具を操作
    してワイヤを加熱し成形する方法。
  18. 【請求項１８】請求項16記載の方法であって、加熱素子
    を有する毛細管を操作してワイヤを加熱し成形する方
    法。
  19. 【請求項１９】請求項16記載の方法であって、基板の面
    に関して鋭角でばねセグメントを基板に取り付ける方
    法。
  20. 【請求項２０】請求項16記載の方法であって、ばねセグ
    メントは先端部が広い方法。
  21. 【請求項２１】請求項16記載の方法であって、ワイヤの
    端部にボールを形成する工程を更に備える方法。
  22. 【請求項２２】請求項16記載の方法であって、導電線は
    接合場所を含み、ワイヤを接合場所にワイヤボンドする
    方法。
  23. 【請求項２３】集積回路を有する基板と、集積回路に電
    気的に通じるダイパッドとを含む半導体ダイ上に接触構
    造を形成する方法であって、 はんだパッドをダイパッドに形成する工程と、 ワイヤボンディング法を用いて金属ワイヤの一端をはん
    だパッドに取り付ける工程と、 ワイヤボンドされた金属ワイヤを加熱して柔軟な構造に
    成形する工程と、 金属ワイヤを切断してダイパッド上に、先端が自由端で
    ある接触ピンを形成する工程とを備える、半導体ダイ上
    に接触構造を形成する方法。
  24. 【請求項２４】請求項23記載の方法であって、基板の面
    に関して鋭角で金属ワイヤを基板に取り付けて柔軟な構
    造を得る方法。
  25. 【請求項２５】請求項23記載の方法であって、ばねセグ
    メントを有する金属ワイヤがはんだパッドに取り付けら
    れた時に金属ワイヤを加熱し、成形して柔軟な構造を得
    る方法。
  26. 【請求項２６】請求項23記載の方法であって、金属ワイ
    ヤの端部に接触ボールを形成する方法。
  27. 【請求項２７】請求項23記載の方法であって、金属ワイ
    ヤをレーザで加熱し、ワイヤボンディング工具により金
    属ワイヤを成形する方法。
  28. 【請求項２８】請求項23記載の方法であって、金属ワイ
    ヤの加熱と成形を加熱した毛細管で行う方法。
  29. 【請求項２９】半導体ダイ上に形成されている集積回路
    に電気的に通じる複数のダイパッドを有する半導体ダイ
    上に接触構造を形成する方法であって、 ダイパッドに整列させられている開口部を有するマスク
    を基板上に形成する工程と、 ダイパッドを電気的に接続するために基板上に短絡層を
    形成する工程と、 ダイパッドに電気的に接続して溶接パッドを開口部内に
    形成する工程と、 溶接法を用いて金属ワイヤを溶接パッドに取り付ける工
    程と、 溶接作業中に金属ワイヤを加熱し、柔軟な構造に成形す
    る工程と、 金属ワイヤを切断して接触ピンを形成する工程と、 溶接パッドに接触している部分を除き、短絡層を除去す
    る工程とを備える、半導体ダイ上に接触構造を形成する
    方法。
  30. 【請求項３０】請求項29記載の方法であって、基板の面
    に関して鋭角で金属ワイヤを基板に取り付ける方法。
  31. 【請求項３１】請求項29記載の方法であって、加熱およ
    び成形工程中に接触ピンをばねセグメントで形成する方
    法。
  32. 【請求項３２】請求項29記載の方法であって、接触ピン
    の端部にボールを形成する方法。
  33. 【請求項３３】請求項29記載の方法であって、金属線を
    レーザで加熱する方法。
  34. 【請求項３４】請求項29記載の方法であって、金属ワイ
    ヤの加熱と成形を加熱した毛細管で行う方法。
  35. 【請求項３５】半導体ダイ上の接触場所に電気的に接続
    するようにされた接触構造を基板上に形成する方法であ
    って、 基板を用意する工程と、 ワイヤの一端を基板の面に関して鋭角で基板に取り付け
    る工程と、 ワイヤを切断して、先端が自由端である接触ピンを形成
    する工程と、 を備える、接触構造を基板上に形成する方法。
  36. 【請求項３６】請求項35記載の方法であって、前記基板
    が相互接続部を有することを特徴とする方法。
  37. 【請求項３７】請求項35記載の方法であって、前記基板
    が半導体ダイを有することを特徴とする方法。
JP08515500A 1994-11-07 1995-11-06 半導体ダイのための接触ピンおよび相互接続部を形成する方法 Expired - Lifetime JP3133341B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/335,262 US5495667A (en) 1994-11-07 1994-11-07 Method for forming contact pins for semiconductor dice and interconnects
US08/335,262 1994-11-07
US335,262 1994-11-07
PCT/US1995/014482 WO1996014659A1 (en) 1994-11-07 1995-11-06 Method for forming contact pins for semiconductor dice and interconnects

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JPH10507878A JPH10507878A (ja) 1998-07-28
JP3133341B2 true JP3133341B2 (ja) 2001-02-05

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0664960A1 (fr) 1994-02-01 1995-08-02 Roquette FrÀ¨res Composition de chewing-gum présentant une qualité organoleptique améliorée et procédé permettant de préparer un tel chewing-gum

Families Citing this family (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US6043563A (en) * 1997-05-06 2000-03-28 Formfactor, Inc. Electronic components with terminals and spring contact elements extending from areas which are remote from the terminals
US5476211A (en) 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5829128A (en) 1993-11-16 1998-11-03 Formfactor, Inc. Method of mounting resilient contact structures to semiconductor devices
US6295729B1 (en) * 1992-10-19 2001-10-02 International Business Machines Corporation Angled flying lead wire bonding process
US20050062492A1 (en) * 2001-08-03 2005-03-24 Beaman Brian Samuel High density integrated circuit apparatus, test probe and methods of use thereof
US7368924B2 (en) 1993-04-30 2008-05-06 International Business Machines Corporation Probe structure having a plurality of discrete insulated probe tips projecting from a support surface, apparatus for use thereof and methods of fabrication thereof
US6528984B2 (en) 1996-09-13 2003-03-04 Ibm Corporation Integrated compliant probe for wafer level test and burn-in
US6452406B1 (en) 1996-09-13 2002-09-17 International Business Machines Corporation Probe structure having a plurality of discrete insulated probe tips
US6442831B1 (en) 1993-11-16 2002-09-03 Formfactor, Inc. Method for shaping spring elements
US6064213A (en) * 1993-11-16 2000-05-16 Formfactor, Inc. Wafer-level burn-in and test
US6525555B1 (en) * 1993-11-16 2003-02-25 Formfactor, Inc. Wafer-level burn-in and test
US20070228110A1 (en) * 1993-11-16 2007-10-04 Formfactor, Inc. Method Of Wirebonding That Utilizes A Gas Flow Within A Capillary From Which A Wire Is Played Out
US6835898B2 (en) * 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US7084656B1 (en) 1993-11-16 2006-08-01 Formfactor, Inc. Probe for semiconductor devices
US7579269B2 (en) * 1993-11-16 2009-08-25 Formfactor, Inc. Microelectronic spring contact elements
US6741085B1 (en) * 1993-11-16 2004-05-25 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US7200930B2 (en) * 1994-11-15 2007-04-10 Formfactor, Inc. Probe for semiconductor devices
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US7073254B2 (en) 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US6836962B2 (en) 1993-11-16 2005-01-04 Formfactor, Inc. Method and apparatus for shaping spring elements
US6184053B1 (en) * 1993-11-16 2001-02-06 Formfactor, Inc. Method of making microelectronic spring contact elements
US6727580B1 (en) 1993-11-16 2004-04-27 Formfactor, Inc. Microelectronic spring contact elements
US6023103A (en) * 1994-11-15 2000-02-08 Formfactor, Inc. Chip-scale carrier for semiconductor devices including mounted spring contacts
US6482013B2 (en) 1993-11-16 2002-11-19 Formfactor, Inc. Microelectronic spring contact element and electronic component having a plurality of spring contact elements
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US20100065963A1 (en) * 1995-05-26 2010-03-18 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
US20020004320A1 (en) * 1995-05-26 2002-01-10 David V. Pedersen Attaratus for socketably receiving interconnection elements of an electronic component
JP3157005B2 (ja) * 1995-05-26 2001-04-16 フォームファクター，インコーポレイテッド ばね要素を成形するための方法及び装置
US6150186A (en) * 1995-05-26 2000-11-21 Formfactor, Inc. Method of making a product with improved material properties by moderate heat-treatment of a metal incorporating a dilute additive
US5597737A (en) * 1995-11-03 1997-01-28 Motorola Inc. Method for testing and burning-in a semiconductor wafer
US5831283A (en) 1995-11-30 1998-11-03 International Business Machines Corporation Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5593903A (en) * 1996-03-04 1997-01-14 Motorola, Inc. Method of forming contact pads for wafer level testing and burn-in of semiconductor dice
US6310484B1 (en) 1996-04-01 2001-10-30 Micron Technology, Inc. Semiconductor test interconnect with variable flexure contacts
US5773311A (en) * 1996-04-26 1998-06-30 Honeywell Inc. Method for providing a test connection and a permanent connection site on an unpackaged semiconductor die
WO1997043656A2 (en) * 1996-05-17 1997-11-20 Formfactor, Inc. Wafer-level burn-in and test
US6140702A (en) * 1996-05-31 2000-10-31 Texas Instruments Incorporated Plastic encapsulation for integrated circuits having plated copper top surface level interconnect
US6429120B1 (en) 2000-01-18 2002-08-06 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
US6020220A (en) * 1996-07-09 2000-02-01 Tessera, Inc. Compliant semiconductor chip assemblies and methods of making same
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
US5707881A (en) * 1996-09-03 1998-01-13 Motorola, Inc. Test structure and method for performing burn-in testing of a semiconductor product wafer
US7282945B1 (en) 1996-09-13 2007-10-16 International Business Machines Corporation Wafer scale high density probe assembly, apparatus for use thereof and methods of fabrication thereof
JP3504448B2 (ja) * 1996-10-17 2004-03-08 株式会社ルネサステクノロジ 半導体装置
US6417029B1 (en) 1996-12-12 2002-07-09 Tessera, Inc. Compliant package with conductive elastomeric posts
US6635514B1 (en) * 1996-12-12 2003-10-21 Tessera, Inc. Compliant package with conductive elastomeric posts
CN1265691C (zh) * 1996-12-19 2006-07-19 揖斐电株式会社 多层印刷布线板及其制造方法
US6690185B1 (en) 1997-01-15 2004-02-10 Formfactor, Inc. Large contactor with multiple, aligned contactor units
US6798224B1 (en) * 1997-02-11 2004-09-28 Micron Technology, Inc. Method for testing semiconductor wafers
US6060891A (en) * 1997-02-11 2000-05-09 Micron Technology, Inc. Probe card for semiconductor wafers and method and system for testing wafers
US7714235B1 (en) 1997-05-06 2010-05-11 Formfactor, Inc. Lithographically defined microelectronic contact structures
AU7491598A (en) * 1997-05-15 1998-12-08 Formfactor, Inc. Lithographically defined microelectronic contact structures
US6140150A (en) * 1997-05-28 2000-10-31 Texas Instruments Incorporated Plastic encapsulation for integrated circuits having plated copper top surface level interconnect
US6215196B1 (en) * 1997-06-30 2001-04-10 Formfactor, Inc. Electronic component with terminals and spring contact elements extending from areas which are remote from the terminals
US6114240A (en) 1997-12-18 2000-09-05 Micron Technology, Inc. Method for fabricating semiconductor components using focused laser beam
US6246245B1 (en) 1998-02-23 2001-06-12 Micron Technology, Inc. Probe card, test method and test system for semiconductor wafers
US6744346B1 (en) * 1998-02-27 2004-06-01 Micron Technology, Inc. Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece
US6217232B1 (en) 1998-03-24 2001-04-17 Micron Technology, Inc. Method and apparatus for aligning an optic fiber with an opto-electronic device
DE19821240C1 (de) 1998-05-12 1999-08-12 Siemens Ag Abschaltbarer Thyristor
US6705876B2 (en) * 1998-07-13 2004-03-16 Formfactor, Inc. Electrical interconnect assemblies and methods
US6452271B2 (en) 1998-07-31 2002-09-17 Micron Technology, Inc. Interconnect component for a semiconductor die including a ruthenium layer and a method for its fabrication
US6179659B1 (en) 1998-08-11 2001-01-30 Micron Technology, Inc. Electrical contact device and associated method of manufacture
US6967497B1 (en) * 1998-08-21 2005-11-22 Micron Technology, Inc. Wafer processing apparatuses and electronic device workpiece processing apparatuses
US6229322B1 (en) 1998-08-21 2001-05-08 Micron Technology, Inc. Electronic device workpiece processing apparatus and method of communicating signals within an electronic device workpiece processing apparatus
EP1129480A1 (en) * 1998-10-05 2001-09-05 Kulicke & Soffa Investments, Inc Semiconductor copper bond pad surface protection
JP2000200804A (ja) * 1998-10-30 2000-07-18 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
US6535393B2 (en) * 1998-12-04 2003-03-18 Micron Technology, Inc. Electrical device allowing for increased device densities
US6887723B1 (en) * 1998-12-04 2005-05-03 Formfactor, Inc. Method for processing an integrated circuit including placing dice into a carrier and testing
WO2000057472A1 (de) * 1999-03-24 2000-09-28 Infineon Technologies Ag Verfahren zum verbinden eines anschlussdrahtes mit einem anschlusskontakt eines integrierten schaltkreises
JP2000357671A (ja) * 1999-04-13 2000-12-26 Sharp Corp 金属配線の製造方法
US7215131B1 (en) * 1999-06-07 2007-05-08 Formfactor, Inc. Segmented contactor
US6544880B1 (en) * 1999-06-14 2003-04-08 Micron Technology, Inc. Method of improving copper interconnects of semiconductor devices for bonding
KR100596766B1 (ko) * 1999-06-28 2006-07-04 주식회사 하이닉스반도체 반도체 패키지의 외부 단자 구조
US7435108B1 (en) * 1999-07-30 2008-10-14 Formfactor, Inc. Variable width resilient conductive contact structures
US6713374B2 (en) 1999-07-30 2004-03-30 Formfactor, Inc. Interconnect assemblies and methods
US6388335B1 (en) * 1999-12-14 2002-05-14 Atmel Corporation Integrated circuit package formed at a wafer level
US6827584B2 (en) * 1999-12-28 2004-12-07 Formfactor, Inc. Interconnect for microelectronic structures with enhanced spring characteristics
US7211512B1 (en) * 2000-01-18 2007-05-01 Micron Technology, Inc. Selective electroless-plated copper metallization
US7262130B1 (en) 2000-01-18 2007-08-28 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US6420262B1 (en) * 2000-01-18 2002-07-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US20010017551A1 (en) * 2000-02-24 2001-08-30 Hembree David R. An electronic device workpiece processing intermediate member
US6426284B1 (en) 2000-03-20 2002-07-30 Illinois Tool Works Inc. Method of manufacturing wire bond pad
US6555757B2 (en) * 2000-04-10 2003-04-29 Ngk Spark Plug Co., Ltd. Pin solder jointed to a resin substrate, made having a predetermined hardness and dimensions
DE10017746B4 (de) * 2000-04-10 2005-10-13 Infineon Technologies Ag Verfahren zur Herstellung eines elektronischen Bauteils mit mikroskopisch kleinen Kontaktflächen
US7458816B1 (en) 2000-04-12 2008-12-02 Formfactor, Inc. Shaped spring
US6640432B1 (en) * 2000-04-12 2003-11-04 Formfactor, Inc. Method of fabricating shaped springs
US6674167B1 (en) * 2000-05-31 2004-01-06 Micron Technology, Inc. Multilevel copper interconnect with double passivation
US6423629B1 (en) * 2000-05-31 2002-07-23 Kie Y. Ahn Multilevel copper interconnects with low-k dielectrics and air gaps
US6462575B1 (en) 2000-08-28 2002-10-08 Micron Technology, Inc. Method and system for wafer level testing and burning-in semiconductor components
US6915928B2 (en) * 2001-01-29 2005-07-12 Pemstar, Inc. Fluid dispenser
US6523255B2 (en) * 2001-06-21 2003-02-25 International Business Machines Corporation Process and structure to repair damaged probes mounted on a space transformer
US20030008243A1 (en) * 2001-07-09 2003-01-09 Micron Technology, Inc. Copper electroless deposition technology for ULSI metalization
US6977515B2 (en) * 2001-09-20 2005-12-20 Wentworth Laboratories, Inc. Method for forming photo-defined micro electrical contacts
US6906540B2 (en) * 2001-09-20 2005-06-14 Wentworth Laboratories, Inc. Method for chemically etching photo-defined micro electrical contacts
EP1306898A1 (en) * 2001-10-29 2003-05-02 Dialog Semiconductor GmbH Sub-milliohm on-chip interconnection
US6759311B2 (en) 2001-10-31 2004-07-06 Formfactor, Inc. Fan out of interconnect elements attached to semiconductor wafer
KR100874541B1 (ko) * 2002-01-17 2008-12-16 아덴트 컨셉트, 인코포레이티드 유연한 전기 접촉수단
USRE41663E1 (en) 2002-01-17 2010-09-14 Ardent Concepts, Inc. Compliant electrical contact assembly
US6909056B2 (en) * 2002-01-17 2005-06-21 Ardent Concepts, Inc. Compliant electrical contact assembly
US7019222B2 (en) * 2002-01-17 2006-03-28 Ardent Concepts, Inc. Compliant electrical contact assembly
US7126062B1 (en) * 2002-01-17 2006-10-24 Ardent Concepts, Inc. Compliant electrical contact assembly
US6767817B2 (en) * 2002-07-11 2004-07-27 Micron Technology, Inc. Asymmetric plating
JP4088121B2 (ja) * 2002-08-14 2008-05-21 富士通株式会社 コンタクタの製造方法
US7388294B2 (en) * 2003-01-27 2008-06-17 Micron Technology, Inc. Semiconductor components having stacked dice
US6841883B1 (en) * 2003-03-31 2005-01-11 Micron Technology, Inc. Multi-dice chip scale semiconductor components and wafer level methods of fabrication
US6892927B2 (en) * 2003-04-24 2005-05-17 Intel Corporation Method and apparatus for bonding a wire to a bond pad on a device
US7042080B2 (en) * 2003-07-14 2006-05-09 Micron Technology, Inc. Semiconductor interconnect having compliant conductive contacts
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
JP4732360B2 (ja) 2003-11-14 2011-07-27 ウエントワース ラボラトリーズ，インコーポレイテッド 組立補助材が組み込まれたダイ設計
US7109068B2 (en) * 2004-08-31 2006-09-19 Micron Technology, Inc. Through-substrate interconnect fabrication methods
CN101053079A (zh) * 2004-11-03 2007-10-10 德塞拉股份有限公司 堆叠式封装的改进
US7371676B2 (en) * 2005-04-08 2008-05-13 Micron Technology, Inc. Method for fabricating semiconductor components with through wire interconnects
US7393770B2 (en) * 2005-05-19 2008-07-01 Micron Technology, Inc. Backside method for fabricating semiconductor components with conductive interconnects
CA2612473A1 (en) * 2005-06-17 2006-12-21 Shell Internationale Research Maatschappij B.V. Modified sulphur and product comprising modified sulphur as binder
US7589406B2 (en) * 2005-06-27 2009-09-15 Micron Technology, Inc. Stacked semiconductor component
US7429529B2 (en) * 2005-08-05 2008-09-30 Farnworth Warren M Methods of forming through-wafer interconnects and structures resulting therefrom
US7517798B2 (en) * 2005-09-01 2009-04-14 Micron Technology, Inc. Methods for forming through-wafer interconnects and structures resulting therefrom
US7307348B2 (en) * 2005-12-07 2007-12-11 Micron Technology, Inc. Semiconductor components having through wire interconnects (TWI)
JP2007165383A (ja) * 2005-12-09 2007-06-28 Ibiden Co Ltd 部品実装用ピンを形成したプリント基板
JP4654897B2 (ja) 2005-12-09 2011-03-23 イビデン株式会社 部品実装用ピンを有するプリント配線板の製造方法
JP4848752B2 (ja) * 2005-12-09 2011-12-28 イビデン株式会社 部品実装用ピンを有するプリント配線板及びこれを使用した電子機器
US8058101B2 (en) 2005-12-23 2011-11-15 Tessera, Inc. Microelectronic packages and methods therefor
US7659612B2 (en) 2006-04-24 2010-02-09 Micron Technology, Inc. Semiconductor components having encapsulated through wire interconnects (TWI)
US7836587B2 (en) * 2006-09-21 2010-11-23 Formfactor, Inc. Method of repairing a contactor apparatus
KR100847507B1 (ko) * 2007-02-07 2008-07-21 윌테크놀러지(주) 니들 및 이를 구비한 프로브 카드
DE102007036566A1 (de) * 2007-08-03 2009-02-19 Siemens Ag Federkontaktierung von elektrischen Kontaktflächen eines elektronischen Bauteils
US7888955B2 (en) * 2007-09-25 2011-02-15 Formfactor, Inc. Method and apparatus for testing devices using serially controlled resources
US7977959B2 (en) * 2007-09-27 2011-07-12 Formfactor, Inc. Method and apparatus for testing devices using serially controlled intelligent switches
US20090164931A1 (en) * 2007-12-19 2009-06-25 Formfactor, Inc. Method and Apparatus for Managing Test Result Data Generated by a Semiconductor Test System
US20090224793A1 (en) * 2008-03-07 2009-09-10 Formfactor, Inc. Method And Apparatus For Designing A Custom Test System
US8122309B2 (en) * 2008-03-11 2012-02-21 Formfactor, Inc. Method and apparatus for processing failures during semiconductor device testing
US8095841B2 (en) * 2008-08-19 2012-01-10 Formfactor, Inc. Method and apparatus for testing semiconductor devices with autonomous expected value generation
US7944225B2 (en) 2008-09-26 2011-05-17 Formfactor, Inc. Method and apparatus for providing a tester integrated circuit for testing a semiconductor device under test
US20100089578A1 (en) * 2008-10-10 2010-04-15 Nguyen Philip D Prevention of Water Intrusion Into Particulates
US8278752B2 (en) * 2009-12-23 2012-10-02 Intel Corporation Microelectronic package and method for a compression-based mid-level interconnect
US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
KR101075241B1 (ko) 2010-11-15 2011-11-01 테세라, 인코포레이티드 유전체 부재에 단자를 구비하는 마이크로전자 패키지
US20120146206A1 (en) 2010-12-13 2012-06-14 Tessera Research Llc Pin attachment
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
US8618659B2 (en) 2011-05-03 2013-12-31 Tessera, Inc. Package-on-package assembly with wire bonds to encapsulation surface
US8836136B2 (en) 2011-10-17 2014-09-16 Invensas Corporation Package-on-package assembly with wire bond vias
US9196588B2 (en) * 2011-11-04 2015-11-24 Invensas Corporation EMI shield
WO2013101226A1 (en) * 2011-12-30 2013-07-04 Intel Corporation Apparatus and method for automated sort probe assembly and repair
US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US9349706B2 (en) 2012-02-24 2016-05-24 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US8372741B1 (en) 2012-02-24 2013-02-12 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US9391008B2 (en) 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
US9443797B2 (en) 2012-09-14 2016-09-13 STATS ChipPAC Pte. Ltd. Semiconductor device having wire studs as vertical interconnect in FO-WLP
US9818734B2 (en) 2012-09-14 2017-11-14 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming build-up interconnect structures over a temporary substrate
US9385052B2 (en) 2012-09-14 2016-07-05 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming build-up interconnect structures over carrier for testing at interim stages
US9134343B2 (en) 2012-09-28 2015-09-15 Intel Corporation Sort probe gripper
US8975738B2 (en) 2012-11-12 2015-03-10 Invensas Corporation Structure for microelectronic packaging with terminals on dielectric mass
US8878353B2 (en) 2012-12-20 2014-11-04 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US9136254B2 (en) 2013-02-01 2015-09-15 Invensas Corporation Microelectronic package having wire bond vias and stiffening layer
DE102013211405B4 (de) * 2013-06-18 2020-06-04 Infineon Technologies Ag Verfahren zur herstellung eines halbleitermoduls
US9023691B2 (en) 2013-07-15 2015-05-05 Invensas Corporation Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation
US8883563B1 (en) 2013-07-15 2014-11-11 Invensas Corporation Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation
US9034696B2 (en) 2013-07-15 2015-05-19 Invensas Corporation Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
CN103500714B (zh) * 2013-09-30 2016-01-20 中南大学 一种利用激光制造折点的引线成弧方法
US9087815B2 (en) 2013-11-12 2015-07-21 Invensas Corporation Off substrate kinking of bond wire
US9082753B2 (en) 2013-11-12 2015-07-14 Invensas Corporation Severing bond wire by kinking and twisting
US9263394B2 (en) 2013-11-22 2016-02-16 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US9214454B2 (en) 2014-03-31 2015-12-15 Invensas Corporation Batch process fabrication of package-on-package microelectronic assemblies
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US9646917B2 (en) 2014-05-29 2017-05-09 Invensas Corporation Low CTE component with wire bond interconnects
US9412714B2 (en) 2014-05-30 2016-08-09 Invensas Corporation Wire bond support structure and microelectronic package including wire bonds therefrom
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9893017B2 (en) 2015-04-09 2018-02-13 STATS ChipPAC Pte. Ltd. Double-sided semiconductor package and dual-mold method of making same
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
US9911718B2 (en) 2015-11-17 2018-03-06 Invensas Corporation ‘RDL-First’ packaged microelectronic device for a package-on-package device
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
TWI578697B (zh) * 2015-12-07 2017-04-11 穩懋半導體股份有限公司 一種用於半導體元件封裝之保護結構
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor
KR102091813B1 (ko) * 2019-03-04 2020-03-20 (주)디팜스테크 부분 열처리된 초소형 반도체 번인 테스트 소켓용 콘택 핀 및 그 제조방법
JP6966815B2 (ja) * 2019-05-20 2021-11-17 株式会社新川 ピン状ワイヤ成形方法及びワイヤボンディング装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667219A (en) 1984-04-27 1987-05-19 Trilogy Computer Development Partners, Ltd. Semiconductor chip interface

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11629A (en) * 1854-08-29 Improved governor for
BE559732A (ja) * 1956-10-31 1900-01-01
US3227933A (en) * 1961-05-17 1966-01-04 Fairchild Camera Instr Co Diode and contact structure
US3266137A (en) * 1962-06-07 1966-08-16 Hughes Aircraft Co Metal ball connection to crystals
US3381081A (en) * 1965-04-16 1968-04-30 Cts Corp Electrical connection and method of making the same
US3894671A (en) * 1971-01-06 1975-07-15 Kulicke & Soffa Ind Inc Semiconductor wire bonder
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
JPS589330A (ja) * 1981-07-08 1983-01-19 Toshiba Corp ボンデイング方法
US4434347A (en) * 1981-08-19 1984-02-28 Fairchild Camera And Instrument Corporation Lead frame wire bonding by preheating
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
JPS6341037A (ja) * 1986-08-06 1988-02-22 Mitsubishi Electric Corp ワイヤボンデイング装置
US4873123A (en) * 1986-10-06 1989-10-10 International Business Machines Corporation Flexible electrical connection and method of making same
US5098305A (en) * 1987-05-21 1992-03-24 Cray Research, Inc. Memory metal electrical connector
JPH01313969A (ja) * 1988-06-13 1989-12-19 Hitachi Ltd 半導体装置
US5293073A (en) * 1989-06-27 1994-03-08 Kabushiki Kaisha Toshiba Electrode structure of a semiconductor device which uses a copper wire as a bonding wire
US5130768A (en) * 1990-12-07 1992-07-14 Digital Equipment Corporation Compact, high-density packaging apparatus for high performance semiconductor devices
US5302891A (en) * 1991-06-04 1994-04-12 Micron Technology, Inc. Discrete die burn-in for non-packaged die
US5158467A (en) * 1991-11-01 1992-10-27 Amp Incorporated High speed bare chip test socket
US5266912A (en) * 1992-08-19 1993-11-30 Micron Technology, Inc. Inherently impedance matched multiple integrated circuit module
US5366589A (en) * 1993-11-16 1994-11-22 Motorola, Inc. Bonding pad with circular exposed area and method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667219A (en) 1984-04-27 1987-05-19 Trilogy Computer Development Partners, Ltd. Semiconductor chip interface

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0664960A1 (fr) 1994-02-01 1995-08-02 Roquette FrÀ¨res Composition de chewing-gum présentant une qualité organoleptique améliorée et procédé permettant de préparer un tel chewing-gum

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KR100290625B1 (ko) 2001-08-07
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AU4232296A (en) 1996-05-31
JPH10507878A (ja) 1998-07-28
US5495667A (en) 1996-03-05

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