KR970707577A - 반도체 다이스 및 상호접속부를 위한 콘택 핀 형성 방법(method for forming contact pins for semiconductor dice and interconnects) - Google Patents

반도체 다이스 및 상호접속부를 위한 콘택 핀 형성 방법(method for forming contact pins for semiconductor dice and interconnects)

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Publication number
KR970707577A
KR970707577A KR1019970703032A KR19970703032A KR970707577A KR 970707577 A KR970707577 A KR 970707577A KR 1019970703032 A KR1019970703032 A KR 1019970703032A KR 19970703032 A KR19970703032 A KR 19970703032A KR 970707577 A KR970707577 A KR 970707577A
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KR
South Korea
Prior art keywords
wire
forming
substrate
contact
heat
Prior art date
Application number
KR1019970703032A
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English (en)
Other versions
KR100290625B1 (ko
Inventor
엠. 판워스 워렌
아크람 살만
지. 우드 앨런
Original Assignee
마이클 엘. 린치
마이크론 테크놀러지 인코포레이티드
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Publication of KR970707577A publication Critical patent/KR970707577A/ko
Application granted granted Critical
Publication of KR100290625B1 publication Critical patent/KR100290625B1/ko

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

매팅 콘택 위치에 전기적 접속을 형성하기에 적합한 콘택 핀들을 형성하는 방법이 제공된다. 제1실시예에 있어서, 콘택 핀들은 반도체 다이를 테스트하는데 이용되는 상호접속부상에 형성되어 다이의 본드 패드들과 전기적 접속을 구현하기에 접합하다. 제2실시예에 있어서, 콘택 핀들은 다이의 본드 패드들상에 직접 형성되어 패드들에 영구적 또는 일시적인 전기적 접속을 구현하는데 이용될 수 있다.
콘택 핀들은 다이 또는 상호접속부에 부착된 베이스부, 컴플리언트 스프링 부 및 상부에 부착된 콘택 볼을 포함한다. 콘택 핀들은 다이 또는 상호 접속부에 부착된 상태의 금속 와이어가 컴플리언트 구조가 되도록 그 금속 와이어를 동시에 열처리 및 성형하는 와이어 본딩 공정 또는 웰딩 공정의 이용으로 형성된다.

Description

반도체 다이스 및 상호접속부를 위한 콘택 핀 형성 방법(METHOD FOR FORMING CONTACT PINS FOR SEMICONDUCTOR DICE AND INTERCONNECTS)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 반도체 다이상에 본딩된 콘택 핀들의 단면도로서 컴플리언트 콘택 구조를 제공하기 위한 각도가 나타난다. 제3A도는 스프링 부를 가지는 컴플라언트 구조를 콘택 핀을 설명하기 위한 단면도이다. 제3B도는 레이저 및 와이어 본딩 도구를 사용하여 제3A의 콘택 핀을 형성하는 여처리 및 제공 공정을 설명하기 위한 도면이다. 제3C는 열 모세관 도구를 이용하여 제3A이 콘택 핀을 형성하는 열처리 및 제조 공정을 설명하기 위한 단면도이다. 제6A도는 본 발명에 따른 콘택 핀들을 가지는 상호접속부의 투시도이다. 제6B도는 제6A도의 일부분을 확대한 도면이다. 제6C도는 전기 접속을 구현하기 위하여 반도체 다이상의 평편한 본드 패드와 매팅 콘택 핀을 확대한 단면도이다.

Claims (34)

  1. 반도체 다이상의 콘택 위치에 전기적 접속을 구현하는데 적합한 콘택 구조를 상호접속부상에 형성하는 방법에 있어서, 기판을 제공하는 단계와, 상기 기판에 와이어를 부착하는 단계와, 컴플리언트 구조 내부로 상기 와이어를 열처리 및 성형하는 단계와, 콘택 핀을 형성하도록 상기 와이어를 절단하는 단계를 포함하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 상기 와이어는 와이어 본딩에 의해 상기 기판엥 부착됨을 특징으로 하는 방법.
  3. 제1항에 있어서, 상기 와이어는 웰딩에 의해 상기 기판에 부착됨을 특징으로 하는 방법.
  4. 제1항에 있어서, 상기 와이어는 미리설정된 모양으로 굽혀질 수 있도록 조절된 레이저 및 와이어 본더 도구로서 열처리 및 성형됨을 특징으로 하는 방법.
  5. 제1항에 있어서, 상기 와이어는 열 모세관 튜브로서 열처리 및 성형됨을 특징으로 하는 방법.
  6. 제1항에 있어서, 상기 와이어는 스프링 부를 포함하도록 성형됨을 특징으로 하는 방법.
  7. 제1항에 있어서, 상기 와이어는 그 상단부에 콘택 볼을 갖도록 성형됨을 특징으로 하는 방법.
  8. 반도체 다이상 콘택 위치에 전기적 접속을 구현하는데 적합한 상호접속부를 위한 콘택 핀을 형성하는 방법에 있어서, 상기 기판상에 도전 트레이스를 형성하는 단계와, 상기 도전 트레이스와 전기적으로 연결되도록 상기 기판상에 부착되고 절단된 와이어로 이루어진 금속 핀을 형성하는 단계와, 그리고, 상기 기판에 부착된 상태로 상기 와이어를 열처리 및 성형하여 컴플리언트 스프링 부를 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
  9. 제8항에 있어서, 상기 컴플리언트 스프링 부는 C 모양임을 특징으로 하는 방법.
  10. 제8항에 있어서, 상기 컴플리언트 스프링 부는 S 모양임을 특징으로 하는 방법.
  11. 제8항에 있어서, 상기 스프링 부는 그 하단부에서 더 큰 폭을 가짐을 특징으로 하는 방법.
  12. 제8항에 있어서, 상기 와이어는 상기 기판의 평면에 대하여 예각으로 부착됨을 특징으로 하는 방법.
  13. 제8항에 있어서, 상기 와이어의 상단부에 콘택 볼을 형성하는 단계를 추가로 가짐을 특징으로 하는 방법.
  14. 제8항에 있어서, 상기 와이어는 상기 기판상에 형성된 본드 사이트에 와이어 본딩되어 상기 기판에 부착됨을 특징으로 하는 방법.
  15. 제8항에 있어서, 상기 와이어는 웰딩으로 상기 기판에 부착됨을 특징으로 하는 방법.
  16. 반도체 다이상의 콘택 위치에 전기적 접속을 구현하는데 접합한 상호접속부를 위한 콘택 핀을 형성하는 방법에 있어서, 기판을 형성하는 단계와, 상기 기판상에 도전 트레이스를 형성하는 단계와, 상기 도전 트레이스와 전기적으로 연결되도록 상기 기판에 결합된 후 절단된 와이어로 이루어진 금속 핀을 형성하는 단계와, 그리고 결합된 와이어 상태로서 상기 금속 핀을 열처리 및 성형하여 컴플리언트 스프링 부를 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
  17. 제16항에 있어서, 상기 와이어를 레이저로서 열을 가하는 동안 와이어 본딩 도구를 조절하여 상기 와이어를 열처리 및 성형하는 단계를 포함하는 것을 특징으로 하는 방법.
  18. 제16항에 있어서, 상기 열처리 성분을 가지는 모세관 튜브를 조절하여 상기 와이어를 열처리 및 성형하는 단계를 포함하는 것을 특징으로 하는 방법.
  19. 제16항에 있어서, 상기 스프링 부는 상기 기판 평면에 대하여 예각으로 부착됨을 특징으로 하는 방법.
  20. 제16항에 있어서, 상기 스프링 부는 그 상부 보다 하부가 더 큰 폭을 가짐을 특징으로 하는 방법.
  21. 제16항에 있어서, 상기 와이어의 상단부에 볼을 형성하는 단계를 추가로 가짐을 특징으로 하는 방법.
  22. 제16항에 있어서, 상기 도전 트레이스는 본드 사이트 및 그에 결합된 와이어를 포함하는 특징으로 하는 방법.
  23. 집적회로를 가지는 기판과 그 기판과 전기적으로 연결되는 다이 패드를 포함하는 반도체 다이상에 콘택 구조를 형성하는 방법에 있어서, 상기 다이 패드 상에 솔더 패드를 형성하는 단계와, 와이어 본딩 공정을 이용하여 금속 와이어를 상기 솔더 패드에 부착하는 단계와, 와이어 본딩된 상태로 상기 금속 와이어를 열처리 및 성형하여 컴플리언트 구조를 형성하는 단계와, 그리고 상기 금속 와이어를 절단하여 상기 다이 패드상에 콘택 핀들을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
  24. 제23항에 있어서, 상기 금속 와이어는 상기 컴플리언트 구조를 제공하도록 상기 기판 평면에 대하여 예각으로 부착됨을 특징으로 하는 방법.
  25. 제23항에 있어서, 상기 컴플리언트 구조를 제공하도록 상기 솔더 패드에 부착된 상태로 상기 금속 와이어를 열처리 및 성형하여 스프링 부를 형성하는 단계를 추가로 가짐을 특징으로 하는 방법.
  26. 제23항에 있어서, 상기 금속 와이어의 상단부상에 콘택홀을 형성하는 단계를 추가로 가짐을 특징으로 하는 방법.
  27. 제23항에 있어서, 상기 금속 와이어는 레이저로서 열처리되고, 상기 금속 와이어는 조절 가능한 와이어 본딩 도구에 의해 성형됨을 특징으로 하는 방법.
  28. 제23항에 있어서, 상기 금속 와이어는 열 모세관 도구로서 열처리 및 성형됨을 특징으로 하는 방법.
  29. 다이상에 형성된 집적회로와 전기적으로 연결된 복수개의 다이 패드들을 가지는 상기 반도체 다이상에 콘택 구조를 형성하는 방법에 있어서, 상기 기판상에 상기 다이 패드들과 정렬된 개구부를 가지는 마스크를 형성하는 단계와, 상기 기판상에 상기 다이 패드들과 전기적으로 접속된 단층을 형성하는 단계와, 상기 다이패드들과 전기적으로 접촉하도록 상기 개구부내에 웰딩 패드들을 형성하는 단계와, 웰딩 공정을 이용하여 상기 웰딩 패드들에 금속 와이어를 부착하는 단계와, 상기 웰딩 공정동안 상기 금속 와이어를 열처리 및 성형하여 컴플리언트 구조를 형성하는 단계와, 상기 금속 와이어를 절단하여 콘택 핀들을 형성하는 단계와, 그리고 상기 웰딩 패드들과 접촉하는 영역을 제외한 상기 단층을 제거하는 단계를 포함함을 특징으로 하는 방법.
  30. 제29항에 있어서, 상기 금속 와이어는 상기 기판 평면에 대하여 예각으로 부착됨을 특징으로 하는 방법.
  31. 제29항에 있어서, 상기 콘택 핀들은 상기 열처리 및 성형 단계 동안 스프링부로서 형성됨을 특징으로 하는 방법.
  32. 제29항에 있어서, 상기 콘택 핀들의 상단부에 볼을 형성하는 단계를 추가로 가짐을 특징으로 하는 방법.
  33. 제29항에 있어서, 상기 금속 와이어는 레이저로서 열처리됨을 특징으로 하는 방법.
  34. 제29항에 있어서, 상기 금속 와이어는 열 모세관 도구로서 열처리 및 성형됨을 특징으로 하는 방법.
    ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.
KR1019970703032A 1994-11-07 1995-11-06 반도체 다이 및 상호 접속부를 위한 접촉핀 형성 방법 KR100290625B1 (ko)

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US08/335,262 US5495667A (en) 1994-11-07 1994-11-07 Method for forming contact pins for semiconductor dice and interconnects
US08/335,262 1994-11-07
PCT/US1995/014482 WO1996014659A1 (en) 1994-11-07 1995-11-06 Method for forming contact pins for semiconductor dice and interconnects

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KR970707577A true KR970707577A (ko) 1997-12-01
KR100290625B1 KR100290625B1 (ko) 2001-08-07

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