JPS6341037A - ワイヤボンデイング装置 - Google Patents

ワイヤボンデイング装置

Info

Publication number
JPS6341037A
JPS6341037A JP61185740A JP18574086A JPS6341037A JP S6341037 A JPS6341037 A JP S6341037A JP 61185740 A JP61185740 A JP 61185740A JP 18574086 A JP18574086 A JP 18574086A JP S6341037 A JPS6341037 A JP S6341037A
Authority
JP
Japan
Prior art keywords
wire bonding
ultrasonic horn
wire
thermal expansion
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61185740A
Other languages
English (en)
Inventor
Hitoshi Fujimoto
藤本 仁士
Hisao Masuda
桝田 久雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61185740A priority Critical patent/JPS6341037A/ja
Publication of JPS6341037A publication Critical patent/JPS6341037A/ja
Priority to US07/275,604 priority patent/US4877173A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • B23K20/007Ball bonding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554External layer
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    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/852Applying energy for connecting
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、超音波ホーンの振動によってICあるいはL
SI等の半導体集積回路素子にワイヤを接続するワイヤ
ボンディング装置に関する。
〔従来の技術〕
例えばIC等の半導体集積回路素子の組立工程において
は、金属細線によって半導体ベレットの電極と外部リー
ドの端子とを接続するワイヤボンディング工程がある。
従来、この種の工程には、ヒートブロックに保持された
リードフレーム上の半導体ベレットを、超音波ホーンの
振動によって外部リードにワイヤ接続するワイヤボンデ
ィング装置が使用されている。
〔発明が解決しようとする問題点〕
ところで、この種ワイヤポンディングmWの使用による
ワイヤボンディングは、例えば100μm四方のアルミ
バンド上に直径100μmのワイヤボールを圧着する超
精密作業であり、ボンディング位置の精度誤差をできる
だけ小さくすることが要求されている。
ところが、従来のワイヤポンディングWWにおいては、
例えばX−Yテーブルの動作ピンチやパターン認識の分
解能を小さくする設計変更によってボンディング位置の
精度誤差を許容範囲内に抑えることが考えられており、
このためその設計変更には自ずと限界があり、近年の電
極(半導体ベレット)サイズの小型化に伴いその精度誤
差を許容範囲(5μm)内に止まらせることができない
という問題があった。
本発明はこのような事情に俗みなされたもので、近年の
電極サイズの小型化に伴う要望に応じることができるワ
イヤボンディング装置を提供するものである。− 〔問題点を解決するための手段〕 本発明に係るワイヤポンディング装置は、超音波ホーン
を5X (1/106)/℃以下の熱膨張係数をもつ金
属材料で形成したものである。
〔作 用〕
本発明においては、ワイヤボンディング位置の精度誤差
を5μm以内に止まらせることができる。
〔実施例〕
第1図は本発明に係るワイヤポンディング装置を示す斜
視図、第2図はその要部を示す側面図である。同図にお
いて、符号1で示すものは同一平面上の2方向に移動す
るX−Yテーブル、2はこのX−Yテーブル1上に取り
付けられたボンディングへノド、3はこのボンディング
ヘッド2に取り付けられその先端部にキャピラリチップ
4を有する超音波ホーンである。この超音波ホーン3は
0.9X (1/106)/’Cの超低線熱膨張係数を
もつニッケル鋼(36%Ni:アンバー)からなる金属
材料で形成されている。5はrTVカメラ、6はヒート
ブロック、7はヒータ、8はフレーム押さえ、9はリー
ドフレーム、10はダイスパッド、11はボンディング
ポジション、12はICベレット、13はワイヤである
このように構成されたワイヤポンディング装置において
は、超音波ホーン3がアンバーからなる金属材料で形成
されているため、超音波ホーン3の熱膨張による伸張を
5μm以内に止まらせることができる。すなわち、ワイ
ヤボンディング位置の精度誤差を5μm以内に止まらせ
ることができる。
次に、前記したワイヤポンディング装置によるワイヤ接
続について説明する。
先ず、ICベレット12をダイアタッチしたリードフレ
ーム9をフレーム押さえ8によってヒートブロック6上
に保持する。次いで、このリードフレーム9をITVカ
メラ5を用いて自動位置決めし、X−Yテーブル1の駆
動によって超音波ホーン3をICベレ・ノド12の電極
の上方に121させた後、超音波ホーン3を下降させ、
キャピラリチップ12によってワイヤ13の先端部をI
Cベレット12の電極に押し付けて超音波を印加する。
このとき、ヒータ7によってヒートブロック6が加熱さ
れている。しかる後、超音波ホーン3を上昇させると共
に、X−Yテーブル1を駆動させてリードフレーム9の
リードポストにボンディングする。
このようにして超音波・熱圧着によるワイヤ接続を行う
ことができる。
この後、ワイヤ13の先端部を球状に形成してワイヤ接
続の1動作が完了するが、実施例の場合はICベレット
12上に多数の電極を有するため、前記した動作が多数
回繰り返される。
なお、本実施例においては超音波ホーン3のみに適用す
る例を示したが、熱変位を防止することは精密組立分野
では精度維持上張も重大な要素であり、このことからも
熱影響を直接受ける例えばヒートブロック6あるいはフ
レーム押さえ8等の構成部品にも適用することにより、
ワイヤ接続での位置精度をさらに高めることができる。
〔発明の効果〕
以上説明したように本発明によれば、超音波ホーンを5
X (1/10b)/℃以下の熱膨張係数をもつ金属材
料で形成したので、ワイヤボンディング位置の精度誤差
を5μm以内に止まらせることができ、近年の電極サイ
ズの小型化に伴う要望に応じることができる。また、ボ
ンディング位置の精度誤差が小さいことは高精度にワイ
ヤ接続することができるから、IC製品の品質を確実に
向上させることができる。
【図面の簡単な説明】
第1図は本発明に係るワイヤボンディング装置を示す斜
視図、第2図はその要部を示す側面図である。 3・・・・超音波ホーン、6・・・・ヒートブロック、
9・・・・リードフレーム、12・・・・ICペレット
。 代   理   人   大 岩 増 雄第1図 第2図    2

Claims (2)

    【特許請求の範囲】
  1. (1)ヒートブロック上に保持されたリードフレーム上
    のICペレットを超音波ホーンの振動によって外部リー
    ドにワイヤ接続するワイヤボンディング装置において、
    前記超音波ホーンを5×(1/10^6)/℃以下の熱
    膨張係数をもつ金属材料で形成したことを特徴とするワ
    イヤボンディング装置。
  2. (2)超音波ホーンの金属材料はアンバーである特許請
    求の範囲第1項記載のワイヤボンディング装置。
JP61185740A 1986-08-06 1986-08-06 ワイヤボンデイング装置 Pending JPS6341037A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61185740A JPS6341037A (ja) 1986-08-06 1986-08-06 ワイヤボンデイング装置
US07/275,604 US4877173A (en) 1986-08-06 1988-11-23 Wire bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61185740A JPS6341037A (ja) 1986-08-06 1986-08-06 ワイヤボンデイング装置

Publications (1)

Publication Number Publication Date
JPS6341037A true JPS6341037A (ja) 1988-02-22

Family

ID=16176030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61185740A Pending JPS6341037A (ja) 1986-08-06 1986-08-06 ワイヤボンデイング装置

Country Status (2)

Country Link
US (1) US4877173A (ja)
JP (1) JPS6341037A (ja)

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JPH06163647A (ja) * 1992-11-18 1994-06-10 Kaijo Corp ワイヤボンダ
JP2005179060A (ja) * 2003-12-22 2005-07-07 Xerox Corp カセットガイドの運動を用紙サイズの検出に適合させる機構及びその組み立て方法

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JP2516806B2 (ja) * 1989-02-27 1996-07-24 株式会社新川 ワイヤボンデイング方法及びその装置
US5086477A (en) * 1990-08-07 1992-02-04 Northwest Technology Corp. Automated system for extracting design and layout information from an integrated circuit
JPH05226407A (ja) * 1991-11-12 1993-09-03 Nec Corp 半導体装置の製造方法及び製造装置
JP3128715B2 (ja) * 1992-12-24 2001-01-29 株式会社新川 ボンデイング装置
US5322207A (en) * 1993-05-03 1994-06-21 Micron Semiconductor Inc. Method and apparatus for wire bonding semiconductor dice to a leadframe
US5350106A (en) * 1993-05-07 1994-09-27 Micron Semiconductor, Inc. Semiconductor wire bonding method
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
JP3005789B2 (ja) * 1993-11-25 2000-02-07 株式会社新川 ワイヤボンデイング装置
US5495667A (en) * 1994-11-07 1996-03-05 Micron Technology, Inc. Method for forming contact pins for semiconductor dice and interconnects
US5665654A (en) * 1995-02-10 1997-09-09 Micron Display Technology, Inc. Method for forming an electrical connection to a semiconductor die using loose lead wire bonding
US5813590A (en) * 1995-12-18 1998-09-29 Micron Technology, Inc. Extended travel wire bonding machine
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
US5775567A (en) * 1996-03-14 1998-07-07 International Business Machines Corporation Apparatus for wirebonding using a tubular piezoelectric ultrasonic transducer
US5626276A (en) * 1996-03-14 1997-05-06 International Business Machines Corporation Linkage drive mechanism for ultrasonic wirebonding
JPH1140595A (ja) * 1997-07-16 1999-02-12 Mitsubishi Electric Corp ワイヤ配線方法、このワイヤ配線方法に使用する配線分岐パッド、および、ボンディング装置、並びに、ワイヤ配線方法をコンピュータに実行させるためのプログラムを記録したコンピュータ読み取り可能な記録媒体
US6309891B1 (en) 1998-09-09 2001-10-30 Incyte Genomics, Inc. Capillary printing systems
US6158647A (en) * 1998-09-29 2000-12-12 Micron Technology, Inc. Concave face wire bond capillary
CN100355525C (zh) * 2005-04-20 2007-12-19 艾逖恩机电(深圳)有限公司 超声波焊线方法及其焊线装置

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US4249986A (en) * 1980-02-12 1981-02-10 Branson Ultrasonics Corporation High frequency horn with soft metallic coating
US4566181A (en) * 1983-04-08 1986-01-28 National Metal And Refining Company, Ltd. Rotational vibratory viscometer transducer and circuit
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Cited By (3)

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Publication number Priority date Publication date Assignee Title
JPH06163647A (ja) * 1992-11-18 1994-06-10 Kaijo Corp ワイヤボンダ
JP2829471B2 (ja) * 1992-11-18 1998-11-25 株式会社カイジョー ワイヤボンダ
JP2005179060A (ja) * 2003-12-22 2005-07-07 Xerox Corp カセットガイドの運動を用紙サイズの検出に適合させる機構及びその組み立て方法

Also Published As

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