JPS59181040A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59181040A
JPS59181040A JP58054467A JP5446783A JPS59181040A JP S59181040 A JPS59181040 A JP S59181040A JP 58054467 A JP58054467 A JP 58054467A JP 5446783 A JP5446783 A JP 5446783A JP S59181040 A JPS59181040 A JP S59181040A
Authority
JP
Japan
Prior art keywords
wire
copper
semiconductor device
pellet
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58054467A
Other languages
English (en)
Inventor
Takao Fujizu
隆夫 藤津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58054467A priority Critical patent/JPS59181040A/ja
Publication of JPS59181040A publication Critical patent/JPS59181040A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01031—Gallium [Ga]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体装置の製造方法に係り、特に多ピン接続
が必要な半導体装置全対象とするものである。
〔発明の技術的背景および七の問題点〕近年半導体装置
は一虐高密匿一集積化されておシ、これに伴い入出力端
子数が増加している。池方りエハブロセヌに２ける微細
化技術の進展に伴いベレットサイズは益々縮小している
ため、ペレットバンド間隔が縮小できなければ能動領域
以外の不要ヌペーヌが必要になる。
ペレットバンド間隔は通常２００μｍ程度であるが、金
線の熱圧着もしくは熱圧着、超音波併用によるボールボ
ンデ１ングでは使用するキャピラリ形状によりバンド間
最小距離が限定される。
これに対し超音波ウェッジボンデ１ングではより細いキ
ャピラリ全使用するからパッド間隔は１００μｍ程度に
でき、熱圧着ボンデ１ングの場合の半分程度でボンディ
ングできる。
そこで従来、入出力端子の多い多ピン型半導体装置では
ペレットをセラミックパッケージに収納して超音波ウェ
ッジボンディングを行っている。
超音波ウェッジボンデ１ングは通常３０μｍ程度の細い
アルミニウム・ワイヤを使用しているから、このまま樹
脂封止を行うとアルミニウムの腐食によシ接続不良が発
生する。この樹脂封止におけるオーブン不良を防ぐため
にアルミニウム・ワイヤヲ５０μｍ以上の太さにし半導
体装置の実使用時間範囲内では不良が出ないようにしよ
うとするとペレットパッド間の縮小ができない。これは
アルミニウム・ワイヤのつぶれ幅が大きいためである。
以上のようにアルミニウムワイヤによる超音波ウェッジ
ボンディングではセラミックパンケージを使用すること
になっている。
しかしながら、このセラミンクパッケージを用いること
により半導体装置のコヌトが置くなる欠点がある。
〔発明の目的〕
本発明は上述の点を考慮して左されたもので、多ピン型
半導体装置全安価に然も信頼性を低下させることなく製
造し得る方法を提供することを目的とする。
〔発明の概要〕
この目的達成のため、本発明′ｔは、銅系ワイヤ、銅系
ワイヤに金、銀を含む貴金總全祖楼し穴ワイヤ、金−ガ
リウムワ−１−１’、銀ワ／Ｉギ等全使用して超音波ウ
ェッジボンデ１ングした上でモールド樹脂封止する半導
体装置の製造方法μｍ供するものである。
以下本発明を一実施例について説明する。
〔発明の実施例〕
本発明方法を実施するために下記のリードフレームとボ
ンデ１ングワ１ヤを使用する。
（１）　　リードフレーム 銅系フレームもしくはチュアロトコノく−ルフレームま
たはこれらのフレームに卑金属であるニッケル等の被覆
を施したリードフレームを使用する。
（２）ボンデインクワ１ヤ 銅系ワ１−ｖ１銅糸ワ１ヤに金、鍮、ノゝラジウム等の
貴金属被覆を施したワイヤ、または銀ワ１ギ、パラジウ
ムワ１ヤ等が使用可能である。
これら（１）、　（２）’ｅ任意に組合わせて使用する
ことが可能である。ここでは銅フレームに銅ワ１ギを組
合わゼた場合について詳述する。
まず銅フレームにペレットをマウントしｆｃ後径３０μ
ｍ程度の銅ワ１ヤを使用し、超音波ワイヤボンデ１ング
にてペレットパッドとリードフレームと全接続する。こ
のボンデ１ングの終了後にモールド樹脂封止全行って半
導体装置とする。この実施列はフレーム、ワ／Ｉ−ｖと
も被覆（メッキ）ヲ要しない利点がある。
上記（１）に挙げたリードフレームと上記（２）に挙げ
たボンデ１ングワ／Ｉギとの能の糾合わせについても同
様の工程による半導体装置の組立ができる。
特にフレーム・ワイヤに被覆ケ施せば、耐腐食性は一層
向上する。
〔発明の効果〕
本発明は上述のように、耐腐食性のボンデ１ングワ１ギ
會用いて超音波ボンデ１ングを行いモールド樹脂封止し
て半導体装置全製造するようにしたものであり、まず超
音波ボンデ１ングによって接続を行うため、ボンデ１ン
グ、ノ＜ソド闇の寸法縮小ができ、ペレントサ１ズの縮
小および半導体装置パンケージの縮小が可能であり、ま
たモード・樹脂封止であるからセラミソクツくソケージ
に比べ廉価にパッケージ全形酸できる。しかもボンデ１
ング時に熱圧着に′Ｊ？ける２００〜２５０Ｃでの加熱
を要しないからボンデ１ング・ダメージを低減でき〜し
たがってマウント材料の耐熱渦朋低下が図れる。
さらに貴金属は使用するにしても被覆に用いる程度で済
まぜることもでき、ボンデ４ングワ１ヤのコヌトを低減
することができる。
出願人代理人　　　　　　　猪股　清

Claims (1)

  1. 【特許請求の範囲】 Ｌリードフレームにペレット全マウントシ、耐腐食性の
    ワイヤを用いて前記リードフレームと前記ベレットとを
    接続し、次いで前記リードフレームおよびペレッＩｆ樹
    脂會用いてモールド封止する半導体装置の製造方法。 ＆特許請求の範囲第１項記載の方法において、前記リー
    ドフレームは銅系材料により構成された半導体装置の製
    造方法。 ８、特許請求の範囲第１項記載の方法において、前記リ
    ードフレームは！ｌ′ｂ−アロイ・コパール製である半
    導体装置の製造方法。 ζ特許請求の範囲第１項記載の方法において、前記リー
    ドフレームは銅系材料または一１ｔｌニーアロトコバー
    ルに卑金属被覆を施したものである半導体装置の製造方
    法。 ５、特許請求の範囲第１項記載の方法において、前記ワ
    イヤは銅系ワイヤである半導体装置の製造方法。 ６、特許請求の範囲第１項記載の方法において、前記ワ
    イヤは銅系ワイヤに貴金属被覆を施したものである半導
    体装置の製造方法。
JP58054467A 1983-03-30 1983-03-30 半導体装置の製造方法 Pending JPS59181040A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58054467A JPS59181040A (ja) 1983-03-30 1983-03-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58054467A JPS59181040A (ja) 1983-03-30 1983-03-30 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPS59181040A true JPS59181040A (ja) 1984-10-15

Family

ID=12971469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58054467A Pending JPS59181040A (ja) 1983-03-30 1983-03-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59181040A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63293929A (ja) * 1987-05-27 1988-11-30 Hitachi Ltd ワイヤボンディング装置
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
JP2006261542A (ja) * 2005-03-18 2006-09-28 Nec Electronics Corp 半導体装置及びその製造方法
WO2011013527A1 (ja) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140839A (en) * 1975-05-30 1976-12-04 Nippon Electric Co Method of forming coatings of different metals
JPS5221769A (en) * 1975-08-11 1977-02-18 Fujitsu Ltd Mold ic producing system
JPS5712543A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140839A (en) * 1975-05-30 1976-12-04 Nippon Electric Co Method of forming coatings of different metals
JPS5221769A (en) * 1975-08-11 1977-02-18 Fujitsu Ltd Mold ic producing system
JPS5712543A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63293929A (ja) * 1987-05-27 1988-11-30 Hitachi Ltd ワイヤボンディング装置
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
JP2006261542A (ja) * 2005-03-18 2006-09-28 Nec Electronics Corp 半導体装置及びその製造方法
JP4666592B2 (ja) * 2005-03-18 2011-04-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2011013527A1 (ja) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
KR20120035093A (ko) 2009-07-30 2012-04-13 가부시키가이샤 닛데쓰 마이크로 메탈 반도체용 본딩 와이어
US8742258B2 (en) 2009-07-30 2014-06-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor

Similar Documents

Publication Publication Date Title
JP2706077B2 (ja) 樹脂封止型半導体装置及びその製造方法
US5384155A (en) Silver spot/palladium plate lead frame finish
US6703691B2 (en) Quad flat non-leaded semiconductor package and method of fabricating the same
JPS59181040A (ja) 半導体装置の製造方法
JP2000332162A (ja) 樹脂封止型半導体装置
JPS61236130A (ja) 半導体装置
JPH0357236A (ja) 樹脂封止型半導体装置の製造方法
JPH03149865A (ja) リードフレーム
JPH11145369A (ja) リードフレームおよびそれを用いた半導体装置ならびにその製造方法
JPS61292928A (ja) 半導体装置
JPS62213269A (ja) 半導体用リ−ドフレ−ム
JPS59201447A (ja) 半導体装置
JPH05211261A (ja) 半導体装置
JPH0846112A (ja) 半導体装置の製造方法
JP2005158771A (ja) 半導体装置およびその製造方法
KR20040004978A (ko) Ｌｏｃ 형 패키지를 갖는 반도체 장치
JP2000269399A (ja) リードフレームとこのリードフレームを用いた半導体装置
JPS6442845A (en) Electronic component and manufacture thereof
JPH09167822A (ja) 樹脂封止型半導体装置
JPH11135697A (ja) 半導体装置およびその製造方法
JPH0228260B2 (ja)
JPH03169057A (ja) 半導体装置
JP2002305267A (ja) 半導体装置およびその製造方法
JPH0362959A (ja) リードフレームの製造方法
JPH11274215A (ja) 半導体素子用ボンディングワイヤ