JPH05226399A - 半導体配線方法 - Google Patents

半導体配線方法

Info

Publication number
JPH05226399A
JPH05226399A JP4023654A JP2365492A JPH05226399A JP H05226399 A JPH05226399 A JP H05226399A JP 4023654 A JP4023654 A JP 4023654A JP 2365492 A JP2365492 A JP 2365492A JP H05226399 A JPH05226399 A JP H05226399A
Authority
JP
Japan
Prior art keywords
capillary
electrode
semiconductor element
wire
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4023654A
Other languages
English (en)
Inventor
Shinichi Abiko
晋一 安彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP4023654A priority Critical patent/JPH05226399A/ja
Publication of JPH05226399A publication Critical patent/JPH05226399A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【目的】 アルミ細線を用いた半導体配線装置で、半導
体素子を固定したまま、全方向の配線を行う。 【構成】 筒状のキャピラリー３A を使用し、キャピラ
リー３A を電極１へ斜めに下降させることにより、アル
ミ細線４の先端部の方向を決定しながら電極部の接合を
行う。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体配線方法に関
し、特にアルミ細線を用いた半導体配線方法に関する。
【０００２】
【従来の技術】従来のアルミ細線を用いた半導体配線装
置では、図２に示すように半導体素子の電極１に対し垂
直に降下し、電極１と外部リード２との間を往復するキ
ャピラリー３B を有している。キャピラリー３B には、
アルミ細線４が図２のように斜めに取り付けられてい
る。
【０００３】動作としては、最初にキャピラリー３B で
アルミ細線４を電極１へ押しつけ超音波振動で接合す
る。次にキャピラリー３B を外部リード２へ移動し、ア
ルミ細線４を外部リード２へ押しつけ、超音波振動で接
合する。
【０００４】次にキャピラリー３B の上昇時にアルミ細
線４を切断し、次の電極の接合に備える。
【０００５】尚、アルミ細線を使用した半導体の配線で
は、金線を用いる配線方法のように細線の先端を溶融
し、球を形成することが困難であるため、電極での接合
において図２のようにアルミ細線をそのまま接合するウ
ェッジ−ウェッジ接合法をとらなければならない。
【０００６】
【発明が解決しようとする課題】この従来のアルミ細線
を用いた半導体配線装置では、電極部と外部リード間の
キャピラリーの動きは、一方向のみにしか設定できない
ため、半導体素子の４辺のそれぞれの電極に配線を施す
ためには、１辺の配線を完了するたびに、半導体素子を
９０°回転しなければならない。
【０００７】そのため、装置の機構が複雑になり、ま
た、配線作業時間が長くなるという問題があった。
【０００８】本発明の目的は、半導体素子を固定したま
ま全方向の配線を行う半導体配線方法を提供することに
ある。
【０００９】
【課題を解決するための手段】前記目的を達成するた
め、本発明に係る半導体配線方法においては、半導体素
子の電極と外部リードの間の配線を行うキャピラリーが
半導体素子の電極部へ降下する際、半導体素子の電極部
に対するキャピラリーの入射角θを、０°＜θ＜９０°
に保つものである。
【００１０】
【作用】先端から０．１ｍｍ程度のアルミ細線を出した
筒状のキャピラリーを半導体素子の電極へ斜めに下降し
接地させ、超音波振動を加えることにより、アルミ細線
の先端は、キャピラリーの移動方向と反対側に折れ曲が
り接合する。
【００１１】
【実施例】次に本発明について図面を参照して説明す
る。図１は、本発明の一実施例を工程順に示す図であ
る。
【００１２】図１（Ａ）において、まず、筒状のキャピ
ラリー３A は、半導体素子の電極１の斜め上方に待機し
ている。このとき、キャピラリー３A の先端から０．１
ｍｍ程度のアルミ細線４を外へ出している。
【００１３】次に図１（Ｂ）に示すように、キャピラリ
ー３A は、半導体素子の電極１に対する入射角θを、０
°＜θ＜９０°に保ち、電極１へ向けて下降し、アルミ
細線４を電極１に超音波振動で接合する。このとき、ア
ルミ細線４の先端は、キャピラリー３A の移動方向と反
対の方向に折れ曲がる。
【００１４】次に図１（Ｃ）に示すように、キャピラリ
ー３A は、上昇しながら外部リード２へ移動し、アルミ
細線４を超音波振動で接合する。
【００１５】
【発明の効果】以上説明したように本発明は、筒状のキ
ャピラリーを使用し、そのキャピラリーを半導体素子の
電極へ斜めに下降させることにより、電極へのアルミ細
線の接合を実現したため、半導体素子自体を回転させる
ことなく、４辺の電極の配線が可能となる。
【図面の簡単な説明】
【図１】本発明の一実施例を工程順に示す図である。
【図２】従来例を工程順に示す図である。
【符号の説明】
１ 半導体素子の電極 ２ 外部リード ３A キャピラリー ４ アルミ細線

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】 半導体素子の電極と外部リードの間の配
    線を行うキャピラリーが半導体素子の電極部へ降下する
    際、半導体素子の電極部に対するキャピラリーの入射角
    θを、０°＜θ＜９０°に保つことを特徴とする半導体
    配線方法。
JP4023654A 1992-02-10 1992-02-10 半導体配線方法 Pending JPH05226399A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4023654A JPH05226399A (ja) 1992-02-10 1992-02-10 半導体配線方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4023654A JPH05226399A (ja) 1992-02-10 1992-02-10 半導体配線方法

Publications (1)

Publication Number Publication Date
JPH05226399A true JPH05226399A (ja) 1993-09-03

Family

ID=12116516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4023654A Pending JPH05226399A (ja) 1992-02-10 1992-02-10 半導体配線方法

Country Status (1)

Country Link
JP (1) JPH05226399A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015125671A1 (ja) * 2014-02-21 2015-08-27 株式会社新川 半導体装置の製造方法及びワイヤボンディング装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015125671A1 (ja) * 2014-02-21 2015-08-27 株式会社新川 半導体装置の製造方法及びワイヤボンディング装置
JPWO2015125671A1 (ja) * 2014-02-21 2017-03-30 株式会社新川 半導体装置の製造方法及びワイヤボンディング装置

Similar Documents

Publication Publication Date Title
TW201314801A (zh) 打線裝置及接合方法
JP3049526B2 (ja) 超音波ワイヤボンデイング方法
US6786392B2 (en) Wire bonding device and wire bonding method
WO2015125671A1 (ja) 半導体装置の製造方法及びワイヤボンディング装置
JPH05226399A (ja) 半導体配線方法
JPS6342855B2 (ja)
JP3128718B2 (ja) ワイヤボンデイング方法
JP3753685B2 (ja) ワイヤボンディング方法
JPH1116934A (ja) ワイヤボンディング方法
JPH056893A (ja) キヤピラリ、それによるバンプ製造方法及びそれによる半導体装置
JPS5948947A (ja) 半導体装置
JP2004296468A (ja) ワイヤボンディング構造及びワイヤボンディング方法
JP2715556B2 (ja) 液晶デバイスの接合方法
JPS6345001Y2 (ja)
JPS5919463B2 (ja) ワイヤボンデイング方法
JPH1116935A (ja) ワイヤボンディング装置
JPH04206841A (ja) 半導体装置用ワイヤボンダ装置
JPS6153737A (ja) 電子装置の組立法及び組立装置
JPH0455529B2 (ja)
JPS62156828A (ja) ワイヤボンデイング装置
JPH039525A (ja) バンプ形成方法及びその形成装置
JPS6324630A (ja) ワイヤボンデイング装置
JP2002368177A (ja) リードフレーム及び半導体装置
JPH01129429A (ja) ワイヤボンデイング装置用キヤピラリ
JPH04207045A (ja) リードフレームのワイヤボンディング方法