JP2715556B2 - 液晶デバイスの接合方法 - Google Patents

液晶デバイスの接合方法

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Publication number
JP2715556B2
JP2715556B2 JP1155303A JP15530389A JP2715556B2 JP 2715556 B2 JP2715556 B2 JP 2715556B2 JP 1155303 A JP1155303 A JP 1155303A JP 15530389 A JP15530389 A JP 15530389A JP 2715556 B2 JP2715556 B2 JP 2715556B2
Authority
JP
Japan
Prior art keywords
liquid crystal
aluminum
film
crystal device
aluminum wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1155303A
Other languages
English (en)
Other versions
JPH0320054A (ja
Inventor
喜文 北山
幸男 前田
徳人 浜根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1155303A priority Critical patent/JP2715556B2/ja
Publication of JPH0320054A publication Critical patent/JPH0320054A/ja
Application granted granted Critical
Publication of JP2715556B2 publication Critical patent/JP2715556B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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Description

【発明の詳細な説明】 産業上の利用分野 本発明は液晶デバイスにおいて、配線のレスキュー
や、ベアーの液晶ドライバーICをワイヤーで接続するた
めの接合方法に関する。
従来の技術 従来、液晶デバイスに液晶ドライバーICを直接搭載し
てワイヤーボンディングする場合の例を第2図に示す。
図において、101はガラス基板、102はITO配線膜、103は
銀ペースト、104は液晶ドライバーIC、105は液晶ドライ
バーICのアルミニウム電極、106は金ワイヤー、107はア
ルミニウム膜である。
第2図に示すように従来は、ガラス基板101条に形成
したインジウム・スズ・オキサイド(以下ITOと記す)
の配線膜102に部分的に真空蒸着、スパッタリングによ
ってアルミニウム膜107を形成しておく。次に銀ペース
ト103をガラス基板に塗布したのち、液晶ドライバーIC1
04をマウントして銀ペースト103を硬化させる。しかる
のち、液晶ドライバーIC104のアルミニウム電極105とガ
ラス基板101上のアルミニウム膜107をボールボンディン
グ法によって接続する。
発明が解決しようとする課題 しかしながら、このような方法ではアルミニウム膜10
7を形成しなければならないが、このアルミニウム膜107
を形成するには、たとえば真空蒸着→レジスト塗布→プ
リベーキング→ポストベーキング→エッチング→洗浄と
いった複雑な工程を経なければならなかった。また、こ
の複雑な工程を経ることによって液晶デバイスの歩留り
が低下するという問題もあった。
課題を解決するための手段 本発明はかかる問題点に鑑み、ガラス基板上に予め形
成されたインジウム・スズ・オキサイトの金属酸化膜の
配線にアルミニウムワイヤーを接続する方法において、
前記アルミニウムワイヤーをツールで押圧しながら超音
波で加振させて、前記アルミニウムワイヤーと前記酸化
膜の配線とを直接接合させる方法である。
作用 本発明によれば、アルミニウムワイヤーをツールで押
圧させながら超音波で加振させるため、大部分はアルミ
ニウムワイヤーとITO配線膜が接合され、一部はITO膜を
部分的に破壊して、アルミニウムワイヤーとITO膜の下
地であるガラス基板が部分的に接合される。したがっ
て、アルミニウムワイヤーとITO膜とは電気的に接続さ
れる。
実 施 例 第1図は本発明の一実施例の構成を説明するための概
略図である。この図において、1はガラス基板、2はIT
O配線膜、3は銀ペースト、4は液晶ドライバーIC、5
は液晶ドライバーICのアルミニウム電極、6はアルミニ
ウムワイヤー、7は超音波ホーン、8はワイヤー6をガ
イドする溝8aを先に有するツールである。
第1図に示すように、まずガラス基板1に銀ペースト
を塗布したのち液晶ドライバーIC4をマウントして銀ペ
ースト3を硬化させる。しかるのち、液晶ドライバーIC
4のアルミニウム電極5とアルミニウムワイヤー6を超
音波ホーン7の先端に取付けたツール8によって押圧さ
せながら超音波を加振させながら接合させる。つぎに、
アルミニウムワイヤー6の他端をガラス基板1上に形成
したITO配線膜2とを同様に超音波ホーン7の先端に取
付けたツール8によって押圧させながら超音波を加振さ
せて接合させる。
なお、ここでは液晶ドライバーICと液晶デバイスとの
接合であってたが、液晶デバイスのレスキューとしてIT
O配線膜間の接合にも使用できることはいうまでもな
い。
発明の効果 本発明によれば、従来のようにITO配線膜との電気的
接触をとるために特別にアルミニウム膜を形成する必要
はないため、工程が簡略化されるとともに、それに伴う
不良もなくなる。
【図面の簡単な説明】
第1図は本発明の一実施例を示す断面図、第2図は従来
の液晶デバイスの接合状態を示す断面図である。 1,101……基板、2,102……ITO配線膜、3,103……銀ペー
スト、4,104……液晶ドライバーIC、5,105……アルミニ
ウム電極、6,106……アルミニウムワイヤー、7……超
音波ホーン、8……ツール、107……アルミニウム膜。
フロントページの続き (56)参考文献 特開 昭60−130721(JP,A) 特開 昭60−144942(JP,A) 特開 昭64−44918(JP,A) 特開 平1−129429(JP,A) 特開 昭63−276278(JP,A) 特開 昭61−216355(JP,A)

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項1】ガラス基板上に予め形成されたインジウム
    ・スズ・オキサイトの金属酸化膜の配線にアルミニウム
    ワイヤーを接続する方法において、 前記アルミニウムワイヤーをツールで押圧しながら超音
    波で加振させて、前記アルミニウムワイヤーと前記酸化
    膜の配線とを直接接合することを特徴とした液晶デバイ
    スの接合方法。
JP1155303A 1989-06-16 1989-06-16 液晶デバイスの接合方法 Expired - Fee Related JP2715556B2 (ja)

Priority Applications (1)

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JP1155303A JP2715556B2 (ja) 1989-06-16 1989-06-16 液晶デバイスの接合方法

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JPH0320054A JPH0320054A (ja) 1991-01-29
JP2715556B2 true JP2715556B2 (ja) 1998-02-18

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010150351A1 (ja) * 2009-06-23 2010-12-29 東芝三菱電機産業システム株式会社 電極基体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216355A (ja) * 1985-03-20 1986-09-26 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用Al線
JPS6271111A (ja) * 1985-09-24 1987-04-01 三菱レイヨン株式会社 透明導電性基板およびその製造法
JPS63276278A (ja) * 1987-05-08 1988-11-14 Toa Nenryo Kogyo Kk 埋込み配線付き透明電極
JPH01129429A (ja) * 1987-11-16 1989-05-22 Mitsubishi Electric Corp ワイヤボンデイング装置用キヤピラリ

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