JP3810155B2 - ワイヤボンディング方法 - Google Patents

ワイヤボンディング方法 Download PDF

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Publication number
JP3810155B2
JP3810155B2 JP29412696A JP29412696A JP3810155B2 JP 3810155 B2 JP3810155 B2 JP 3810155B2 JP 29412696 A JP29412696 A JP 29412696A JP 29412696 A JP29412696 A JP 29412696A JP 3810155 B2 JP3810155 B2 JP 3810155B2
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Japan
Prior art keywords
bonding
conductive adhesive
wire
semiconductor chip
wiring electrode
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Expired - Fee Related
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JP29412696A
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JPH10144716A (ja
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幸宏 前田
俊夫 鈴木
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Denso Corp
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Denso Corp
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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、２つの電極を導線にて電気的に接続するワイヤボンディング方法に関する。
【０００２】
【従来の技術】
従来、配線基板等に設けられた配線電極を２次側ボンディングとして、Ａｕワイヤにてボンディングする場合において、配線材料とＡｕワイヤの接合性が悪いとき、特開平３−１８３１３９号公報に示すいわゆるボールボンディング手法が用いられる。
【０００３】
つまり、図３に示すように、配線電極２上に予めＡｕボール１０を形成し、半導体チップ４等の１次側ボンディングから引き出されたＡｕワイヤ１をこのＡｕボール１０の上にボンディングする。
【０００４】
【発明が解決しようとする課題】
しかしながら、このボールボンディング手法においては、製造上Ａｕボール１０が１つづつしか形成できないため、Ａｕボール１０を形成するのに時間がかかる。そして、配線電極２の数が多ければ多いほどＡｕボール１０の数も多くなり、より多くの時間を必要とする。その結果、配線電極２をＡｕワイヤ１で接合するのにかなりの時間を消費するという問題がある。
【０００５】
具体的には、Ａｕボールを１つ形成するためには約０．１（ｓ）の時間を必要とする。従って、例えば１チップの配線基板３に１００ピンのＡｕワイヤ１を施す場合には、約１０（ｓ）の時間がかかる。さらにこの配線基板３を多数チップ組み合わせるとなるとその分の時間、例えば配線基板３をｎチップ組み合わせるとＡｕボール１０を形成するのに１０×ｎ（ｓ）の時間がかかり、かなりの時間を消費する。
【０００６】
本発明は上記点に鑑みてなされたもので、配線電極を導線で接合する時間を短縮化することを目的とする。
【０００７】
【課題を解決するための手段】
本発明は上記目的を達成するため、以下の技術的手段を採用する。請求項１乃至３に記載の発明においては、基板上に形成された複数の２次ボンディング側の配線電極と、前記基板上に搭載された半導体チップの複数の１次ボンディング側電極とを導線で接続するワイヤボンディング方法において、導電性接着剤を、予め前記複数の２次ボンディング側の配線電極および前記基板上の半導体チップを搭載する部分に、同時に印刷する工程と、前記印刷された導電性接着剤上に半導体チップを搭載する工程と、前記印刷された導電性接着剤を硬化させる工程と、前記半導体チップの１次ボンディング側電極に導線をボンディングした後に、前記２次ボンディング側の配線電極上の硬化した導電性接着剤上に２次ボンディングを行うことを特徴とする。
【０００８】
このようなワイヤボンディング方法を適用することにより、従来必要とされた複数のＡｕボールを形成するために必要とする時間を削減することができる。なお、このように導電性接着剤を同時形成する場合、形成するＡｕボールの数が多くなればなる程上述した削減できる時間は多くなる。このため、形成する導電性接着剤の数が多い場合には特に有効である。
【０００９】
また、半導体チップを基板上に搭載する場合、半導体チップを基板上に固定する必要がある。この場合、これらを搭載する部分に接着剤やはんだ等を形成する工程が必要となる。このように、基板上に選択的に接着剤等を形成したい場合において、２次ボンディング側の配線電極上に導電性接着剤を形成すると同時に、基板上の半導体チップを搭載する部分にも、導電性接着剤を形成することにより、工程数の削減を図ることができる。
【００１０】
【発明の実施の形態】
以下、本発明の実施の形態を図に基づいて説明する。
本発明の一実施形態におけるＡｕワイヤ（導線）１を配線電極（導体）２にボンディングしたときの説明図を図１に示す。図１に示すように、セラミック基板３上に配線電極２が形成されている。この配線電極２はセラミック基板３に複数形成されており、その材質は銅（Ｃｕ）、ニッケル（Ｎｉ）又はフラッシュＡｕ等が用いられている。
【００１１】
また、このセラミック基板３上には半導体チップ（電子部品）４が搭載されている。この半導体チップ４には図示しないが複数の電極（導体）が形成されており、そのそれぞれの電極と配線電極２とをＡｕワイヤ１にて電気的に接続している。そして、このＡｕワイヤ１と配線電極２との間に硬化した導電性接着剤５が形成されており、これはＡｕワイヤ１と配線電極２との接続性を向上させるために形成されている。
【００１２】
また、この導電性接着剤５は、銀（Ａｇ）、アルミニウム（Ａｌ）、金（Ａｕ）等を主成分としたもので、本実施形態においてはＡｇの含有量が８０％以上のＡｇペーストを用いている。このようにＡｇの含有量を高くしているのは、Ａｕワイヤ１および配線電極２との電気的接続性を高めるためである。
次に、本実施形態におけるワイヤボンディング方法について図２（ａ）〜（ｄ）に基づいて説明する。
【００１３】
図２（ａ）に示すように、まずセラミック基板３に形成された配線電極２のうち２次ボンディングを行う部分の全てと、半導体チップ４が搭載されるダイマウント部４ａに穴が形成されたマスク６をセラミック基板３上に位置決めして搭載する。
そして、図２（ｂ）に示すように、このマスク６上から複数の配線電極２及びダイマウント部４ａ上に印刷手法により導電性接着剤５を同時に印刷する。このとき、配線電極２上の導電性接着剤５は、後述する硬化後に膜厚が２０μｍ以下（好ましくは１０μｍ以下）になるような厚さに形成する。これは導電性接着剤５の膜厚が厚いと、Ａｕワイヤ１を接合したときにＡｕワイヤ１の接合部分が細くなるため、導電性接着剤５の膜厚を薄くして、Ａｕワイヤ１との接合性を増加させるためである。
【００１４】
その後、図２（ｃ）に示すように、導電性接着剤５が形成されたダイマウント部４ａに半導体チップ４を搭載し、加熱処理により導電性接着剤５を硬化させ、半導体チップ４を固定する。このとき、配線電極２上の導電性接着剤５も同時に硬化し、配線電極２と導電性接着剤５が完全に電気的に接合した状態となる。
その後、図２（ｄ）に示すように、半導体チップ４に形成された電極側に１次ボンディングして、さらに配線電極２側に２次ボンディングし、ワイヤボンディングが終了する。
【００１５】
ここで、配線電極２には前述のように銅（Ｃｕ）、ニッケル（Ｎｉ）又はフラッシュＡｕが用いられているため、Ａｕワイヤ１との接合性が良くない。しかし、これらの間に、配線材料とＡｕワイヤ１に共に接合性が良いＡｇ等を主成分とする導電性接着剤５を形成しているため、Ａｕワイヤ１はこの導電性接着剤５と接合すれば良い。
【００１６】
従って、従来においては、ボールボンディング手法によりＡｕワイヤ１のボンディングを行っていたため、Ａｕボール１０を形成するために多くの時間がかかっていたが、導電性接着剤５は印刷手法により形成することができるため、短時間で多数の配線電極２上に形成することができる。従って、Ａｕボール１０を形成するのに必要とされていた時間を縮減することができる。なお、これに伴い製品のコストダウンを図ることができる。
【００１７】
そして、本実施形態に示すように、半導体チップ４をセラミック基板３に接着するための接着剤を、配線電極２に導電性接着剤５を形成する際に同時に形成しているため、このために必要とする工程を排除できる。
【００１８】
なお、本実施形態においては、半導体チップ４とセラミック基板３上に形成された配線電極２とのワイヤボンディングについて説明したが、これに限らず、例えば、セラミック基板３上に形成された配線電極２同士とのワイヤボンディングや、セラミック基板３上の配線電極２と他の基板上に形成された配線電極２等を接続する場合においても同様の効果が得られる。
【００１９】
また、本実施形態においては電子部品として半導体チップ４を挙げ、セラミック基板３のうちこの半導体チップ４を搭載する部分に導電性接着剤５を形成したが、これは半導体チップ４に限らず、例えばコンデンサ等セラミック基板３上に搭載する電子部品であれば適用できる。
セラミック基板３は、プリント基板であっても同様の効果が得られる。
【図面の簡単な説明】
【図１】本発明の一実施形態であって、半導体チップ４と配線電極２とをワイヤボンディングしたときの説明図である。
【図２】図１におけるワイヤボンディングの手順図である。
【図３】従来におけるワイヤボンディングの説明図である。
【符号の説明】
１…Ａｕワイヤ、２…配線電極、３…セラミック基板、４…半導体チップ、
４ａ…ダイマウント部、５…導電性接着剤、６…マスク。

Claims (3)

  1. 基板上に形成された複数の２次ボンディング側の配線電極と、前記基板上に搭載された半導体チップの複数の１次ボンディング側電極とを導線で接続するワイヤボンディング方法において、
    導電性接着剤を、予め前記複数の２次ボンディング側の配線電極および前記基板上の半導体チップを搭載する部分に、同時に印刷する工程と、
    前記印刷された導電性接着剤上に半導体チップを搭載する工程と、
    前記印刷された導電性接着剤を硬化させる工程と、
    前記半導体チップの１次ボンディング側電極に導線をボンディングした後に、前記２次ボンディング側の配線電極上の硬化した導電性接着剤上に２次ボンディングを行う工程とを有することを特徴とするワイヤボンディング方法。
  2. 前記導電性接着剤を形成する工程は、複数の２次ボンディング側の配線電極に対応する部分及び半導体チップの搭載部に対応する部分に、穴を有するマスクを前記基板上に位置決めする工程と、
    前記マスク上から導電性接着剤を印刷により形成する工程とを備えることを特徴とする請求項１に記載のワイヤボンディング方法。
  3. 前記導電性接着剤は、銀（Ａｇ）、アルミニウム（Ａｌ）又は金（Ａｕ）を主成分とした接着剤であることを特徴とする請求項１又は２のいずれか１つに記載のワイヤボンディング方法。
JP29412696A 1996-11-06 1996-11-06 ワイヤボンディング方法 Expired - Fee Related JP3810155B2 (ja)

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