TWI362078B - Gold bonding wire for semiconductor elements - Google Patents

Gold bonding wire for semiconductor elements Download PDF

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Publication number
TWI362078B
TWI362078B TW094141270A TW94141270A TWI362078B TW I362078 B TWI362078 B TW I362078B TW 094141270 A TW094141270 A TW 094141270A TW 94141270 A TW94141270 A TW 94141270A TW I362078 B TWI362078 B TW I362078B
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Taiwan
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mass
ppm
alloy
gold
balance
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TW094141270A
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English (en)
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TW200618146A (en
Inventor
Satoshi Teshima
Michitaka Mikami
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Tanaka Electronics Ind
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Publication of TW200618146A publication Critical patent/TW200618146A/zh
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Publication of TWI362078B publication Critical patent/TWI362078B/zh

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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  • Arc Welding In General (AREA)

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1362078 九、發明說明： 【發明所屬的技術領域】 本發明係有關半導體之積體電路元件上的電極及為連接電路 配線板之外部引線而用的半導體元件用金（Au)銲接線，更詳細 而言，係有關可使壓銲球之真圓度提高的半導體元件用肋銲接線。 【先前技術】 長久以來連接半導體裝置所用的丨C晶片電極與外部引線之線 鲁仏15 30/zm程度的線’由輝接線之强度較優的觀點，以純度go. gg 質量％以上的高純度金内添加有微量的元素之超細線係較常被使 用著。至於連接半導體元件用Au銲接線的方法之第一次壓銲方 式，以併用超音波之熱壓銲法係較主要的被使用著，以電弧加熱 方式加熱熔解銲接線尖端，利用表面張力使形成銲球後，使於 150〜30G°C之範ϋ内已加熱的半導體元件之電極上贿銲球部，其 後藉由超音波壓銲方式直接使銲接線娜銲接至外部引線側。爲 鲁使用作電晶體或1C等的半導體裝置，於·前述的銲接線之鲜接 後’以保護Si晶片、銲接線及Si晶片經與安裝的部分之引導框 架為目的，乃以環氧樹脂封裝。 最近，半導體裝置之小型化、高密度化的要求正予提高著， 為因應1C晶片之多腳（pin)化伴隨多腳化的狹窄間距⑽⑻ 化，Au焊接線之細線化即被要求著。尤其，隨著半導體裝置之更 高積體化及小型化、薄型化及高功能化，半導體裴置的大小正曰 益變小。由而，銲塾之大小亦由邊長1〇〇_咸少至邊長·『 5 1362078 爲避免由焊接線之細線化引起的銲接線本身之絶對的剛性之降 低、銲墊間隔之狹小化引起的相鄰銲接線間的短路，對銲接線方 面乃被要求需具有較高的裂斷應力。另外，於銲塾之間隔亦變成 狹小化時，為防止相鄰的壓銲銲球之接觸，對銲接線方面乃被要 求壓銲銲球直徑需具有較小的分散性。 於習用的銲接線方面，由於具有烈段應力及壓銲直徑之分散 性呈現相反的特性’故此二特性並未朗時成立。爲防止鲜接線 相互間的接觸，若提高銲接線强度時，則壓銲銲球直徑之分散性 即變大且壓銲銲球會接^反之，為減少壓銲銲球直徑之分散性， 若降低銲接龜麟，職糾_接線騎 間會接觸。目祕咖嘛，叫_== 實現0 若欲舉例説明與前述的銲接線有關的文獻，則如下所示。 【專利文獻丨】曰本特公平2-12022號公報 【專利文獻2】曰本專利第3 143 755公報 【專利文獻3】日本特開平5_179375號公報 【專利文獻4】曰本特6-145842號公報 【專利文獻5】日本細平㈣祕公報 【專利文獻6】曰本特開2004-22887號公報 【發明内容】 登曰月欲解决的輝翻 1362078 本發明之課題’係提供即使銲接線之線徑變細至23#m以下， 以有優越真81度賴銲銲球卿成，且具有能耐銲接雜流的裂 斷應力之半導體元件用Au銲接線。 本發明人為解決上述課題，經精心研究的結果，以至完成本 發明。亦即，若依本發明時’則可提供以下所示的半導體元件用 Au銲接線。 (1) 以由Au基體及機能性元素而成的Au合金而成，該An 基體係含有Be 3〜15質量ppm U4G質量_、U 質 量ppm ’餘量為au而成的虬合金，提高該au合金之壓銲銲球的 真圓度及該Au合金焊接線的裂斷應力為特徵的半導體元件用Au 銲接線。 (2) 以由基體及機能性元素而成的Au合金而成，該Au 土體係έ有Be 3~15質量ppm、Ca 3〜40質量ppm、La 3~20質 量ppm ’餘量為Au *成的Au合金，至於該機能性元素係含有^ 及/或Eu3 20質量ppm二該Au合金之壓銲銲球的真圓度及該 AU合金焊接線的撕應力為特制半導體元件用Au銲接線。 (3) 乂由Au基體及機能性元素而成的Au合金而成，該au 基體係含有Be 3〜15質量_、Ca 3~40質量ppm、La 3〜20質 ϊ ppm ’餘置為Au而成的Au合金，至於該機能性元素含有由啦、 Si及以之中選出的至少一種3〜20質量ppm，提高該Au合金之壓 銲銲球的真m度及該Au合金焊接線的綱應力為舰的半導體元 1362078 件用Αυ銲接線》 (4)以由Au基體及機能性元素而成的Au合金而成，該An 基體係含有Be 3〜15質量ppm、Ca 3〜40質量ppm、La 3〜20質 量PPm’餘量為Au而成的Au合金’至於該機能性元素，含有Sn3〜8〇 質量Ppm，提高該Au合金之壓銲銲球的真圓度及該Au合金焊接線 的裂斷應力為特徵的半導體元件用Au銲接線。 (5)以由Au基體及機能性元素而成的Au合金而成，該Au基 體係含有Be 3〜15質量ppm、Ca 3〜40質量ppm、La 3〜20質量 PPni ’餘量為Au而成的Au合金’至於該機能性元素，含有由Mg， 或Si選出的至少一種3~20質量ppm及γ 3〜20質量ppm，提高該 Au合金之壓銲銲球的真圓度及該Au合金焊接線的裂斷應力為特 徵的半導體元件用Au銲接線。 (6) 以由Au基體及機能性元素而成的Au合金而成，該 基體係含有Be 3〜15質量ppm、Ca 3〜40質量ppm、La 3〜20質 • 量PPm，餘量為Au而成的Au合金，至於該機能性元素，含有由 Mg或Si選出的至少一種3-20質量ppm及Ce及/或Eu 3〜20質量 ppm，提高該Au合金之壓銲銲球的真圓度及該Au合金焊接線的裂 斷應力為特徵的半導體元件用Au銲接線。 (7) 以由Au基體及機能性元素而成的Au合金而成，該Au 基體係含有Be 3〜15質量ppm、Ca 3〜40質量ppm、La 3〜20質 量ppm’餘量為Au而成的Au合金，至於該機能性元素，含有Sn3~80 8 1362078 質量PPm及Ce及/或Eu 3〜2〇質量，提高該Au合金之壓鲜鲜球的 真圓度及該Au合金谭接線的裂斷應力為特徵的半導體元件用如 銲接線。 (8) 以由Au基體及機能性元素而成的Au合金而成，該Au 基體系3有Be 3〜15質量ppm、Ca 3〜40質量ppm、La 3〜20質 量PPm ’餘量為Au而成的Au合金，至於該機能性元素，含有由 Mg或Si選出的至少一種3,質量ppm及Ce及/或Eu 3〜20質量 ppm再者γ 3〜20質量_，提高該Au合金之壓銲銲球的真圓度 及該AU合金焊接線的裂斷應力為特徵的半導體it件用Au銲接線二 (9) 以該Au基體所含有的Au之純度係99. 99質量％以上為 特徵的請求項卜8中任―項所述的半導體猶用Au鲜接線。 (10) 以該Au合金之壓銲銲球的真圓度為Q· 95]·阳之範圍 且》亥Au合金之裂斷應力在23 kg/mm2以上為特徵的請求項卜9中 任一項所述的半導體元件用Au銲接線^ (11) 以線徑在23ym以下為特徵的請求項M〇中任一 述的半導體元件用Au銲接線。 於本發明中的壓銲輝球之真圓度係如下所示般予以定義著。 亦即，自麟方向觀察由超細線製作銲接線並進行銲球銲接 之際的壓銲直徑時’以來自銲接機器的超音波的施加方向當作γ 轴，與Υ軸正㈣軸當作，以祕直徑之χ軸 數值為χ轴之數值⑹及取數值(y小因此藉：： 裝置對200條進行第一次壓銲’求取各自的χ軸之測定值（Xi) 及Y轴之測定值（y i )。因此，由此200條之中選擇任意的5〇條， 對該50條各自求取以Y軸之測定值（y i )除X軸之測定值（χ i ) 時的計算值。最後以此50條之計算值的平均值作爲壓銲銲球之真 圓度。 且’所使用的銲接線’如後述的實施例1〜53所舉般，雖為「拉 線加工’以線偟25ym、20/zm及15_時經最終熱處理，調整成 伸長率4%者。」，但如上述定義般，因採用線徑之比例，以此等 的尺度範圍未顯示線俚之大小等的影響。此外熔融銲球形成條件 或潰散之際的條件等，亦於一般的操作條件下，不影響本發明之 課題的壓銲銲球直徑之分散性或銲接線之強度。 於本發明之裂斷應力，細轉接線讀面積除於棚〜5〇〇 c熱處理經連續拉線製作的超細線之鋅絲並經調質成伸長率4 %時的裂斷應力之拉伸試驗的裂斷强度，作為裂斷應力。 發明之功妫 本發月之半導體元件用Au銲接線，係由Au基體及機能性元 、成的Au &金而成者，其線徑即使成爲以下的細線徑’ 呆持提π#接線本身之纟請剛性的狀態下，亦可使兼具壓鲜鲜 /真圓度的功效。結果，使於第-次壓銲着賴銲面積狹窄即 可即使進行焉密度實際封裝，相鄰的銲接線亦不致短路。 【實施方式】 1362078 於本發明之半導體元件用Au銲接線方面，該Au基體係由Be、 Ca、La與Au而成。本發明之^基體用的如係高純度金，其純度 為99· 99質量％以上’宜為99 9的質量％以上。至今爲止，前述 的Au基體較純金基體堅硬且增加瞧絲人所㈣，是，鲜接 線之線徑若由25«變細成23_時，麟耻魏㈣Au基體 之Au合金會過於變硬而具有半導體晶片容易龜裂的缺陷。 本發明人等探討麟找於即使添加多種_元素時亦可使硬
度及剛性穩定的Au基體時，含有Ca，Be及u合計75質量_ 以下二宜為59質量ppm以下的Au基體，可知對其他的添加元素 (機能性疋素）在硬度及剛性的觀點上係穩定的。雖然Be、La 及Ca不論何者對純金均係容易使熔融鲜球之形狀變形的元素，但
La及Ca不_何者均具有增加剛性之作用，以主要上具有 可取得全體的配衡之伽。級此等制明瞭減H Ca及
La之純度各自在99質量％以上，宜為99. 9質量％以上。 若依本發明之此如―Be_ca—La基體（au基體），係若將該 微置το素（ca，Be及La)之含量規定成指定的範圍時，可知會使 壓鲜鮮球之真®度提高。其含量騎形成銲齡之Au合金的全體 質量’ Be在3〜15質量ppm ’ ca在3〜40質量ppm，加上，La在 3〜20質量ppm的範圍，宜為以在7〜13質量卯⑺，以在厂別質 量PPm ’ La在8〜16質量_1的範圍。此、Ca或La若各自未滿3 量ppm時’製成鲜接線時的絶對剛性會降低，樹脂成形之際， 1362078 經予壓銲的銲接線會未能耐受·旨之_。將此現象稱作鋒接線 流動。尤其使線徑變窄成23卵以下時，此銲接線流動會大大地 出現此種傾向。若予添加Be超過15質量ppm時，則熱處理銲接 線並予調質成伸長率4%之際，會使銲接線之强度降低。若予添加
Ca超過40質量ppm時，或La超過2〇質量卯m時，則於銲球銲 接時的贿銲球之㈣喊不歡，壓銲銲球直徑之分散性會變 大。
Au基體内所含的該微量元素之合計量為9質量ppm以上，宜 為22質量ppm。 對此Au—Be—Ca—La基體已微量添加有機能性元素Ce或Eu 的 Au-Be-Ca-La-Ce 合金及 Au-Be-Ca-La-Eu 合金，係不 :何者右規；t微:fit素之含量成指定的範圍時，則可使裂斷應力 ，高，且使壓銲銲球之真圓度提高。A含量係對^合金的全體質 量，Be在3~15質量_，ca在3〜4G質量_，加上，La在3〜2〇 質量PPn的範圍，宜為Be在7~13質量_，Ca在？〜3〇質量卿， U在㈣質量ppm的範圍。Be、&或u若各自未滿3質量_ 時’製成銲接線時的絶對剛性會降低，經予壓銲的線會未能 耐受銲接線流動。尤其使線徑變窄成·m以下時，此鲜接線流 ^會大大地出現此麵向。若予添加Be _ 15 f量_時，則 熱處理銲接線並予調質成伸長率4%之際，會使輝接線之强度降 低。若予添加Ca超過40質量_時，或La超過2()質量_時， 12 • 断銲球銲接時_銲_球之變形即成不穩定，虔銲銲球直徑之 . 分散性會變大。 機能性7C素之Ce或Eu的純度係99質量％以上，宜為99. 9 質量％以上其$置係對形成薛接線之合金的全體質量，在 3 20質里ppm，宜為8~16質量卯⑺的範圍。&或肋係微細的分 政於Au-Be-Ca-12四元合金内，可知係可使麟應力顯著提高 _ 的70素。另外，使Ce或Eu所具的裂斷應力提高的功效，係即使 同時添加有機能性元素Si或Mg或Ga，或Sb或Sn或則 ，或Y的 微量元素’亦可知對Ce或Eu所具的裂斷應力之提高功效較難受 其和響但疋，Ce或Eu未滿3質量ppm時，則裂斷應力之提高功 效亦不足，又若予添加Ce或Eu超過20質量_時，則壓銲銲球 之刀散性會變大。因此Ce或Eu之範圍係如上所述般予以決定的。 對此Au-Be-Ca〜LaE9元合金已微量添加有機能性元素Mg、 φ Sl 或以的 AU—Be—Ca—La—此合金、Au-Be-Ca-La-Si 合金 或Au-Be-Ca-La-Ga合金，係若規定微量元素之含量成指定的 範圍時貝|!可使裂斷應力提高，且使壓銲辉球之真圓度提高。其 含量係對形成雜線之Au合金的全鮮量，％在3.質量卿, 在3 20質1 ppm ’加上，Ga在3 2〇質量_的範圍，宜為飑 在W質量酬，Si在？~18質量卿，加上質量_ $紅圍Mg Si或Ga若各自未滿3質量ppm時，則會成為不具提 真圓又之力效^予添加Mg超過2Q質量卿時，&超過質 1362〇78 責ppm時，或Ga超過20質量ppm時，則於銲球銲接時的壓銲銲 * 和_即成顿^，壓銲銲球纽之分散性會變大。因此Mg、 * Si或以之範圍係如上所述般予以決定的。 fe、Si或Ga之純度，係各自99質量％以上，宜為99 9質 *%以上。Mg、Si或Ga係微細的分散於Au —Be—Ca_u四元合 金内，可知係可使壓銲銲球之真圓度提高的元素。另外，使飑、 Si或Ga所具的使壓銲銲球之真圓度提高的功效，係即使同時添加 Φ Ce、Eu或Y的微量元素，亦可知較難受其影響。 對此Au-Be-Ga-Ura元合金已微4添加錢驗元素如、
Sb 或 Βι 的 Au~~Be—Ca—La—Sn 合金、Au—Be-Ca—La—Sb 合金 - 及Au—Be—Ca—La—Bi合金，係不論何者若規定微量元素之含量 * 成指定的範圍時，則可使裂斷應力提高，且使壓銲銲球之真圓度 提高。Au合金基體中的含量，係對形成銲接線之Au合金的全體質 春董’ Sb在3〜80質量ppm ’ Sn在3〜80質量ppm，加上，Bi在3~8〇 質量ppm的範圍，宜為不論何者均在〜質量ppm的範圍β、 或Bi若予添加各自未滿3質量ppm及8〇質量ppm以上時，則 牢固的形成壓銲銲球之真圓度的功效並不足，則麟球銲接時的 壓銲銲球之變形即成不穩定，壓銲銲球直徑之分散性會變大。 沾’ Sn或Bi之純度係99質量％以上，宜為99. 9質量％以 Sb Sn或Bi係微細的分散於Au—Be—Ca—La四元合金内， 可知係顯著的可使壓銲銲球之真圓度提高的元素。另外，使洗， 1362078
Sn或Bi所具的使壓銲銲球之真圓度提高的功效，係即使同時添加 Ce、Eu的微量元素，亦可知較難受其影響。 且，全部微量元素對本發明之AU合計，係1〇〇 ppm以下，宜 為20〜90 ppm的範圍。除以「99. 99質量％以上的Auj表示外， 因Au基體中的分散性良好，即使使銲接線之線徑由25,變窄成 23em以下時，亦可得穩定的真圓度。銲接線之線徑係25〜5//ηι， 宜為設成23〜8/zm。 其次，舉出實施例説明本發明。 實施例 於純度99. 999質量％之面純度Au内配合微量元素至成表1 所記載的數值（質量PPm)，在真空熔解爐熔解鑄造。對此進行拉 線加工，於線徑25ym、22以m、20//m及15；um時進行最終熱處 理’調整伸長率爲4%。在大氣中對此超細線藉由銲球壓銲方式進 行第一次壓銲至邊長60#m之A1銲墊上的半導體晶片時，在第一 次壓銲時所有的銲球係予成形於邊長60//m之A1銲墊内。其評估 結果示於表2。 除微量元素之成分組成變化成表3所示者以外，餘與實施例 同法取得熱處超細線。與實施例同法評估此超細線。其結果合併 表示於表4。 1362078 且裂斷應力」之評估係以如下所述般進行。於純度99. 999 質量％之高純度Au内配合微量元素至成表1所記載的數值（質量
Ppm)’在真空熔解爐熔解鑄造。對此進行拉線加工，於線徑扔仁讯、 22Mm、20ym及15/zm時進行最終熱處理，將已調整伸長率爲4 %的銲接線裁切成l〇cm長度，取各1〇條進行拉伸試驗，求取其 平均值並進行評估。平均值在23 kg/mm2以上者以◎記號表示，2〇 kg/mm以上至未滿23 kg/mm2者以〇記號表示，未滿20 kg/mm2以 上者以△表示。 「壓銲銲球之真圓度」之評估，係對上述方式製得的銲接線 進行第一次的銲接於Si晶片上的A1電極（A1厚度··約Mm)， 其後於經予鍍銀而由42合金而成的引線之間進行第二次銲接並進 仃接線。該時幅寬（span)爲3 mm，條數為2〇〇，採用已進行接 線的銲接線中任意的50條銲接線進行評估。測量與超音波之施加 方向平行的方向之壓銲直徑及垂直的方向之壓銲直徑，該比率在 0.95〜1.05之範圍内者以◎記號表示，在〇 9〇〜11()之範圍内者 (在〇·95~1·〇5之範圍内者除外）以〇記號表示，其他範圍者以 △記號表示。 「綜合評估」係於上述二種評估中，以◎具二個以上者為特 別良好者表示作◎，以◎具—個而無△者為良好者表示作〇，以 無◎及△者為普通者表示作△，以△具一個者表示作X。 由上述的結果顯而可知，本發明之Au合金銲接線若微量元素 1362078 之添加量係在規定值内時，可知超細線之線徑即使成爲23μm以 下亦可得令人滿意的壓銲功效。相對於此，習用的Au合金銲接線 之情况，微量元素之添加量係在規定值外，線徑在23//m以下之 情况，亦可知未能獲得銲接功效。
1362078 表1
編珑 Au Be (質量 ppm) Ca (質量 ppm) La (質董 ppm) Ce (質量 ppoOe Eu (質量 ppm) Ug (質量 ppm) Si (質量 ppm) Ga (質量 ppm) Sb (質量 ppm) Sn (質量 ppm) Bi (質董 ppn) Y (質量 ppo) 1 餘量 5 15 5 2 餘量 5 10 15 3 餘量 10 10 10 4 餘量 10 5 20 5 餘量 15 20 15 6 餘董 15 5 5 7 餘董 5 20 5 5 8 餘量 10 10 10 10 9 餘量 10 10 15 20 10 餘董 5 20 5 5 11 餘量 10 10 10 10 12 餘量 15 5 15 20 13 餘量 5 20 10 5 14 餘董 10 10 15 15 15 餘董 10 15 10 10 16 餘量 15 5 20 20 17 餘量 5 25 5 10 18 餘量 15 10 10 15 19 餘董 5 20 10 20 20 餘量 10 10 15 50 21 餘量 10 15 10 50 22 餘量 15 5 20 70 23 餘量 5 25 5 30 24 餘量 15 10 10 50 25 餘量 5 20 10 5 5 26 餘量 10 10 15 15 10 27 餘量 10 15 10 10 15 28 餘量 15 5 20 20 10 29 餘量 5 25 5 10 10 30 餘量 15 10 10 15 15 31 餘量 15 5 5 5 5 32 餘量 10 10 10 10 15 33 餘量 10 25 20 15 20 34 餘董 5 15 15 5 10 35 餘量 10 20 10 10 10 36 餘量 10 25 5 5 20 37 餘量 15 10 10 5 5 38 餘董 5 15 25 15 10 39 餘量 5 20 5 5 10 15 40 餘量 10 10 20 10 5 5 5 4! 餘董 10 20 10 15 30 42 餘量 10 10 10 10 50 43 餘t 5 5 15 10 70 44 餘量 10 25 15 5 30 45 餘董 10 10 10 10 50 46 餘量 5 20 '5 5 70 47 餘董 10 30 5 5 30 48 餘量 5 10 15 10 50 49 餘t 5 10 10 10 70 50 餘t 10 20 10 10 20 20 20 51 餘量 5 10 20 to 10 5 52 餘量 10 25 10 10 15 10 53 餘t 5 15 15 15 10 5 18 1362078 表2
表1的编號 線徑//m 真圓度 裝斷應力 综合烀估 1 25 〇 〇 Δ 2 25 ◎ 〇 〇 3 25 ◎ 〇 〇 4 22 〇 〇 Δ 5 22 〇 〇 △ 6 22 ◎ 〇 〇 7 20 〇 〇 Δ 8 20 ◎ ◎ ◎ 9 20 〇 ◎ 〇 10 15 〇 〇 Δ 11 15 〇 ◎ 〇 12 15 〇 〇 △ 13 25 〇 〇 △ 14 25 ◎ 〇 〇 15 25 ◎ 〇 〇 16 22 ◎ 〇 〇 17 22 〇 ◎ 〇 18 22 ◎ 〇 〇 19 20 ◎ 〇 〇 20 20 ◎ 〇 〇 21 20 ◎ 〇 〇 22 15 〇 〇 △ 23 15 〇 〇 Δ 24 15 ◎ 〇 〇 25 25 〇 ◎ 〇 26 25 ◎ ◎ ◎ 27 25 ◎ ◎ ◎ 28 22 ◎ 〇 0 29 22 〇 ◎ 〇 30 22 〇 〇 Δ 31 20 〇 〇 Δ 32 20 ◎ ◎ ◎ 33 15 〇 ◎ 〇 34 15 〇 ◎ 〇 35 15 ◎ ◎ ◎ 36 25 〇 〇 Δ 37 25 ◎ 〇 〇 38 25 〇 ◎ 〇 39 22 〇 〇 Δ 40 22 ◎ 〇 〇 41 22 〇 ◎ 〇 42 20 ◎ ◎ ◎ 43 20 ◎ 〇 〇 44 20 〇 ◎ 〇 45 15 ◎ ◎ ◎ 46 15 〇 ◎ 〇 47 15 〇 ◎ 〇 48 25 〇 〇 △ 49 25 〇 ◎ 〇 50 25 〇 ◎ 〇 51 22 〇 ◎ 〇 52 22 ◎ ◎ ◎ 53 22 〇 ◎ 〇 19 1362078 表3 编號 Au Be(質董 ppm) Ca(質量 ppm) La(質董 ppm) Ce(質量 ppm)e Eu(質量 ppm) Mg(質量 ppm) SK質董 ppm) Ga(質量 ppm) Sb(質量 ppm) Sn(質量 ppm) Bi(質量 ppm) Y(質量 ppra) 其他 微量元素 (質量ppm) 1 餘量 3.1 2.7 11.2 9.6 Pr 8.7 及 Sfli 3.6 2 餘量 14 3 5 10 3 Gd 6 3 餘量 14 3 5 10 3 A1 6 4 餘量 16 3 3 3 5 B 0.08 5 餘董 8 20 6 5 10 In 30 6 餘量 10 20 20 10 10 10 Pt 10 及 Gd 10 7 餘量 20 10 10 '8 餘量 5 50 !0 .9 餘量 10 10 2 10 餘量 5 10 5 2 11 餘量 10 30 15 30 12 餘量 15 5 15 30 13 餘量 5 15 10 2 14 餘量 10 20 20 30 15 餘董 10 5 5 2 16 餘量 5 15 5 30 17 餘量 5 25 10 2 18 餘量 5 10 20 30 19 餘量 15 30 10 15 1 1 20 餘董 5 5 15 15 30 30 30 21 餘量 10 20 10 10 50 50 22 餘量 10 30 10 10 30 20 1362078 表4
比較例的編珑 線授 真圓度 a斷應力 综合評估 1 20 〇 Δ X 2 20 〇 △ X 3 20 〇 △ X 4 15 Δ △ X 5 15 △ 〇 X 6 15 △ 〇 X 7 22 〇 Δ X 8 15 △ ◎ X 9 25 〇 △ X 10 20 Δ Δ X 11 25 Δ ◎ X 12 25 △ △ X 13 25 △ 〇 X 14 22 △ 〇 X 15 22 △ Δ X 16 22 △ △ X 17 20 △ 〇 X 18 20 △ 〇 X 19 20 △ 〇 X 20 22 Δ △ X 21 22 Δ 〇 X 22 22 △ ◎ X
【圖式簡單説明】 無 【主要元件符號說明】 無 21

Claims (1)

  1. l362〇78 g年df正 十、申請專利範圍： -- 1· 一種半導體元件用金銲接線，係以由金（Au)基體及機能 性元素而成的Au合金而成，其特徵在於該Au基體含有Be 3〜15質量ppm、Ca3〜40質量ppm、La3~2〇質量ppm，餘 量為Au而成的Au合金，至於該機能性元素係含有Ce及〆或 Eu 3〜20質量ppm，提高該Au合金之壓銲銲球的真圓度及該 Au合金焊接線的裂斷應力。 2. -種半導體元件用金_接線’細由金（Au)基體及機能 性元素而成的Au合金而成，其特徵在於該Au基體含有此 3〜15質量ppm、Ca3〜40質量ppm、La3〜2〇質量ppm，餘 量為Au而成的Au合金，至於該機能性元素含有由Mg或& 選出的至少-種3〜2G質量ppm，提高該Au合金之μ輝辉球 的真圓度及該Au合金焊接線的裂斷應力。 3. -種半導體兀件用金銲接線’係以由金（Au)基體及機能 性元素而成的An合金而成，其特徵在於該Au基體含有如 3]5質量ppm、Ca3〜40質量_、La3〜2〇質量_，餘 量為Au而成的Au合金’至於該機能性元素，含有Sn3 8〇 22 1362078 rf 哗年月月泛甘 貞置ppm，提高該All合金之壓銲銲球的真圓度及該Au合金 焊接線的裂斷應力。 4· 一種半導體元件用金銲接線，係以由金（Au)基體及機能 性元素而成的Au合金而成，其特徵在於該龅基體含有阶 3〜15質量ppm、Ca 3〜40質量ppm ' La 3〜20質量ppm，餘 量為Au而成的Au合金，至於該機能性元素，含有由啦，或 Si選出的至少一種3〜20質量ppm及Y 3〜20質量ppm，提高 該Αιι合金之壓銲銲球的真圓度及該Au合金焊接線的裂斷應 力0 5.—種半導體元件用金銲接線，係以由金（Au)基體及機能 性元素而成的Au合金而成，其特徵在於該Au基體含有Be 3〜15質量ppm、Ca 3〜40質量ppm、La 3〜20質量ppm，餘量 為Au而成的Au合金，至於該機能性元素，含有由Mg或& 選出的至少一種3〜20質量ppm及Ce及/或Eu3〜20質量ppm， 提高該Au合金之壓銲銲球的真圓度及該Au合金焊接線的裂 斷應力。 23 1362078 广_____， 厂，H ,J.O】年,l月白i— 千e 、弋六 _领 Χ·> 6·—種半導體元件用金銲接線’係以由金（Au)基體及機能 性元素而成的Au合金而成，其特徵在於該Au基體含有Be 3〜15質量ppm、Ca 3〜40質量ppm、La 3〜20質量ppm，餘量 為Au而成的Au合金，至於該機能性元素，含有sn3〜80質 量ppm及Ce及/或Eu 3〜20質量，提高該Au合金之壓銲銲 球的真圓度及該Au合金焊接線的裂斷應力。
    7. —種半導體元件用金銲接線，係以由金（Au)基體及機能 性元素而成的Au合金而成，其特徵在於該au基體含有Be 3〜15質量PPm、Ca 3〜40質量ppm、La 3〜20質量ppm，餘量 為Au而成的Au合金，至於該機能性元素，含有由啦或& 選出的至少一種3〜20質量_及Ce及/或⑹訃邡質量卯m， 再者Y 3〜20質量ppm，提高該Au合金之壓銲銲球的真圓度 及該Au合金焊接線的裂斷應力。 8. 根據請求項1〜7巾任—項所述的半導體元件用金鲜接線， 該金（AU)基體所含有的Au之純度係99. 99質量％以上。 9. 根據請求項8所述的半導體元件用金銲接線，該金（如） 24 1362078 嗶年石月丨巧二Οι 合金之壓銲銲球的真圓度為0. 95〜1. 05之範圍且該該Au合 金之裂斷應力在23 kg/mm2以上。 10.根據請求項9所述的半導體元件用金銲接線，該金銲接 線之線徑在23#m以下。 25
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EP1830398A4 (en) 2012-06-06

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