TW201444005A - 高速信號線用接合線 - Google Patents
高速信號線用接合線 Download PDFInfo
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Abstract
本發明之目的係提供一種銀-鈀-金(Ag-Pd-Au)基合金之高速信號線用接合線,其即使在接合線表面形成不穩定的硫化銀層時,仍無堅固的硫化銀(Ag2S)膜,並可傳輸穩定的數千兆赫(giga Hertz,GHz)帶等之超高頻信號。本發明之解決方法係提供一種高速信號線用接合線,其係由鈀(Pd)2.5~4.0質量%、金(Au)1.5~2.5質量%及剩餘部分為純度99.99質量%以上之銀(Ag)所構成之三元合金,其特徵為,該接合線剖面係由表皮膜與芯材所構成,該表皮膜係由在連續鑄造後所縮徑的連續鑄造面與表面偏析層所構成,該表面偏析層係由較芯材含量漸增之銀(Ag)且含量漸減之金(Au)之合金區域所構成。
Description
本發明係關於高速信號線用接合線,其連接半導體元件之焊墊電極與配線基板上之引線電極,特別是關於使用1至15千兆赫頻率的高速信號線用接合線。
近年來,伴隨半導體裝置製造技術之發展,將使用超過數千兆赫頻帶的超高頻之高速信號線用半導體積體電路裝置組裝於行動電話機等已逐漸增加。在高頻傳輸中,以往一般是持續使用純度99.99質量%以上之高純度金接合線。但是若於數千兆赫至十數千兆赫帶中使用通常之接合線將超高頻之高速.超高速信號線用之半導體元件與配線電極等連接時,由於超高頻信號流經接合線之表皮層,故超高頻信號所致高頻電阻將更形增大。因而,使用高純度金接合線是造成接收靈敏度或發送輸出等降低之原因。
因此吾人已就電阻係數(electrical resistivity)值相對於高純度金(Au)之2.4μΩcm,電阻係數值為1.6μΩcm純度99.99%之高純度銀(Ag)等之金屬線進行研討。然而,溶解.鑄造後洗淨之後,經過連續拉線再製造接合線之過程,因大量之高純度銀(Ag)金屬線過軟而不適於實用化。又,在大氣中銀(Ag)被硫化而在接合線之表皮層形成硫化銀(Ag2S)膜,並使熔融焊球變硬,故會有因焊球(FAB)而損及球焊
特性的缺點。因而,純銀接合線並不直接使用於流經數μm之表皮層的高頻傳輸,雖然在日本特開昭57-21830號公報中,有提案一種銀-鈀合金金屬線,但是在如見於日本特開2003-59963號公報(後述專利文獻1)般,其僅係對純銀接合線進行純金電鍍而將其實用化。如此,純銀接合線之所以未實用化,是因為其於作為用於超高頻之高速信號線前,並無法形成穩定的熔融焊球之故。亦即,若欲使用於焊球(FAB)所導致的球焊(ball bonding),而形成熔融焊球時,因形成於金屬線表面的堅固的硫化銀(Ag2S)會使熔融焊球變硬,故在第一接合時將會產生晶片破裂等。
另一方面,作為利用電導性高的銀之電阻係數之目的,已有開發出一種添加10000至55000質量ppm(1至5.5質量%)之金及1至100質量ppm之鉍於銀之銀-金二元系合金之接合線,且並未使其電阻係數值降低至如同目前廣泛使用的純度99%之金金屬線同樣之3.1μΩcm以下,此外亦已開發出在該金屬線添加了20000質量ppm以下鈀的銀-金-鈀三元系合金之接合線(日本特開2012-49198號公報(後述之專利文獻2))。在此,吾人認為將鈀之添加量設在20000質量ppm(2質量%)以下,是因為「若添加超過20000質量ppm時,焊球之硬度將變高,而發生球焊時之焊墊破損(參照同公報0021段落)」。
又,亦有揭示一種球焊用金屬線,其係選自鈣、銅、釓(Gd)、釤(Sm)的二種以上元素合計含有5至500重量ppm,選自鈀、金之一種以上之元素合計含有0.5至5.0重量%,其以外為由銀及不可避免雜質所構成(日本特開2012-151350號公報(後述專利文獻3))。但是,
該接合線係以球焊法來連接半導體元件之經鎳/鈀/金被覆的電極及電路配線基板之導體配線用之接合用金屬線(W),並非係將鋁(Al)合金(Al-Si-Cu等)焊墊電極接合者。因為「鋁(Al)與銀(Ag)的接合處易腐蝕」焊墊(參照日本特開2012-151350號公報(後述專利文獻3)0015段落)」。
此外,亦有揭示一種接合線,其「以銀(Ag)為主成分,包含選自10000至90000質量ppm之金(Au)、10000至50000質量ppm之鈀(Pd)、10000至30000質量ppm之銅(Cu)、10000至20000質量ppm之鎳(Ni)之至少一種以上之成分,其中氯(Cl)含量小於1質量ppm」(日本特開2012-99577號公報(後述專利文獻4))。但是,該接合線,如「波長380至560nm之光之反射率95%以上,故使用藍色系之發光的白色LED亦為有效(參照同公報0010段落)」所示為LED用,與高速信號線用接合線,在目的.效果上不同。
[專利文獻1]日本特開2003-59963號公報
[專利文獻2]日本特開2012-49198號公報
[專利文獻3]日本特開2012-151350號公報
[專利文獻4]日本特開2012-99577號公報
本發明之目的係提供一種銀-鈀-金基合金之高速信號線用接合線,其藉由在銀-鈀-金基合金之接合線表面,將高濃度之純
銀層及低濃度之金合金化層(以下稱為「高濃度純銀層」)予以偏析,而因該經偏析的均勻厚度之高濃度純銀層之形成,使得焊球(FAB)的接合特性變得良好之同時,即使放置於大氣中,可於一定期間中阻止硫化銀之形成或其行進至內部,並傳輸穩定的數千兆赫頻帶等之超高頻信號。
本發明用以解決課題之高速信號線用接合線之一,係一種含有微量添加元素的Ag-Pd-Au基合金接合線,其係以焊球(FAB)連接用於半導體元件之焊墊電極與配線基板上之引線電極,該接合線係由鈀(Pd)2.5至4.0質量%、金(Au)1.5至2.5質量%及剩餘部分為純度99.99質量%以上之銀(Ag)所構成之三元合金,該接合線表面係由在連續鑄造後經縮徑的連續鑄造面所構成,其接合線之剖面係由表面偏析層與芯材所構成,該表面偏析層係由較芯材含量漸增之銀(Ag)且含量漸減金之(Au)之合金區域所構成之高濃度純銀層。
又,用以解決本發明課題之高速信號線用接合線之一者係一含有微量添加元素之銀-鈀-金基合金接合線,其係以焊球(FAB)連接半導體元件之焊墊電極與配線基板上之引線電極,該接合線係由鈀(Pd)2.5至4.0質量%、金(Au)1.5至2.5質量%、以及銠(Rh)、銥(Ir)、釕(Ru)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、銦(In)、矽(Si)、鍺(Ge)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、釔(Y)、鑭(La)、鈣(Ca)或銪(Eu)中至少一種以上之添加微量元素其合計為5至300質量ppm,及剩餘部分為純度99.99質量%以上之銀(Ag)所構成之三元系合
金,該接合線表面由在連續鑄造後經縮徑的連續鑄造面所構成,而該接合線剖面由表面偏析層及芯材所構成,其表面偏析層係由含量較芯材漸增之銀(Ag)且含量漸減之金(Au)之合金區域所構成之高濃度純銀層。
又,本發明之用以解決課題之高速信號線用銀-鈀-金基合金接合線之較佳態樣之一係前述高速信號為1至15千兆赫之頻率。
又,本發明之用以解決課題之高速信號線用銀-鈀-金基合金接合線之較佳態樣之一為前述焊墊電極係純度99.9質量%以上之鋁(Al)金屬或0.5至2.0質量%之矽(Si)或銅(Cu)及剩餘部分純度99.9質量%以上之鋁(Al)合金。
又,用以解決本發明課題之高速信號線用銀-鈀-金基合金接合線之較佳態樣之一係前述焊墊電極係由金(Au)、鈀(Pd)或鉑(Pt)之表層所構成的電極墊。
此外,本發明之用以解決課題之高速信號線用銀-鈀-金基合金接合線,與純金接合線相同地,係用鑽石模(Diamond dice)使剖面減少率經99%以上縮徑,並連續地進行冷間拉線加工,其後藉由調質熱處理來調整接合線的機械性特性。該熱調質處理,溫度低、處理時間亦短,故高濃度純銀層之表面偏析層不會消失。
(主添加元素)
於本發明中,之所以使用純度99.99質量%以上之銀(Ag)於剩餘部分,係為了使銀(Ag)含量多的合金之表面偏析層均勻地
在金屬線全部邊緣形成之故。這是因為純度低時,因雜質之影響會使得銀(Ag)含量多的合金之表面偏析層厚度有不規則之虞。
於純銀接合線的情況中,硫化物比氧化物更穩定,故該硫化物較為不佳。以往的純銀接合線中,係在大氣中的高純度銀(Ag)表面上使表面的銀(Ag)變為離子,並與大氣中的硫化氫鍵結而形成硫化物。該硫化物雖最初於純銀線表面形成不穩定的硫化銀層,但硫化銀層最後會在純銀接合線的表面成長為數奈米左右的堅固的硫化銀(Ag2S)膜並確定保持於該純銀接合線之表面上。而且,吾人認為存在該表皮層的硫化合物將沿著結晶粒界移動並進一步進入純銀接合線內部,使堅固的硫化銀(Ag2S)膜擴展。
在純銀(Ag)中將鈀(Pd)及金(Au)予以合金化的大量之銀-鈀-金合金之情形,高濃度純銀層之硫化銀層之形成較純銀接合線更弱。而且,在本發明之銀-鈀-金基合金之情形,金(Au)的濃度從表層越往芯材內部將漸增,在芯材方面因有鈀(Pd)及金(Au)4.0至6.5質量%之含量,故得使形成於表面的硫化銀(Ag2S)膜持續進入至內部之時間延遲。
本發明將由銀-鈀-金基合金所構成的接合線之鈀(Pd)含量設成較金(Au)之含量更多之原因在於,以相對於耐硫化性較銀(Ag)更高價的銀-鈀基質之構成,在該銀-鈀基質中可使更高價之金(Au)所導致的表面偏析層形成之故。
於本發明中添加預定量的鈀(Pd)之目的在於使硫化之進行延遲。在濕氣多的環境下使用接合線之等情形時,因接合線表面
易於硫化,須使用金屬線本身為耐硫化性的由銀-鈀-金基合金所構成之金屬線。鈀(Pd)含量為2.5質量%時,因純銀接合線表面會形成堅固的硫化銀(Ag2S)膜因此得使其延遲。另一方面,若鈀(Pd)超過2.5質量%時,因銀濃度降低而使其高頻特性稍有惡化,因此作為超高頻信號線而言將不適當,然而由於有高濃度純銀層形成,故實用上至4.0質量%為止將不會產生影響。
又,鈀(Pd)係一使硬度顯著增加的合金化元素,鈀(Pd)含量為2.5質量%以上時,在形成焊球(FAB)時,熔融焊球之硬度變高而有導致球焊時晶片破裂之虞(參照專利文獻2第0021段落),然而藉由使金(Au)之含量增多並設置低熔點之高濃度純銀層,且鈀(Pd)含量在4.0質量%以內之範圍則得以解決此問題。此外,鈀(Pd)即使在高濃度純銀層中或芯材中亦維持大致固定之濃度。
本發明中,金(Au)之合金化元素比重較銀(Ag)及鈀(Pd)高,相對於銀-鈀基合金基質可發揮表面偏析效果。經表面偏析的高濃度純銀層,因係利用稀釋合金之固相.氣相間之表面現象者,故該高濃度純銀層可遍及接合線全周均勻地形成一定寬度之層。於該高濃度純銀層中,自金屬線表面觀察中心時,若銀(Ag)濃度漸減而變低時(第一圖上側之曲線),相反地金(Au)之合金化元素濃度將漸增而變高(第一圖下側之曲線)。接著,就會在金屬線內存在有銀(Ag)濃度相對高之高濃度純銀層區域與相對地低濃度之芯材區域之二區域。因此,即使在高濃度金屬線表面形成不穩定的硫化銀層,伴隨著與較銀(Ag)高價之合金化元素(鈀(Pd)及金(Au))之存在,在室溫大氣中使用接合線作為
製造後信號線為止之放置期間中,得使銀合金表面之硫化合物至內部的進行延遲之同時,亦延遲在銀合金表面堅固的硫化銀(Ag2S)膜之形成。
因高純度之金(Au)相對於高純度銀-鈀合金基質會產生表面偏析,若於連續鑄造時於高純度之銀(Ag)中添加鈀(Pd)及金(Au),銀(Ag)之高濃度區域與金(Au)之低濃度區域之高濃度純銀層將於表皮層附近形成環形狀。接合線的製造步驟中,若保持該高濃度層的狀態,以水進行冷卻等並以冷作方式進行連續拉線,則該高濃度層與細線的線徑將會等比例地縮徑。因而,此高濃度純銀層可利用於數千兆赫(Hz)以上之高頻信號中。
將直徑8mm之連續鑄造金屬線縮徑至20μm之接合線為止之情形(剖面減少率99.9%以上)中,接合線之表皮理論上會殘留著自表面數nm以下之銀(Ag)的高濃度層,實際上可自直徑8mm之連續鑄造金屬線至直徑20μm之金屬線之拉線階段中,觀察到如第一圖般之銀(Ag)的高濃度區域(第一圖上側之曲線)與金(Au)之低濃度區域(第一圖下側之曲線)之高濃度純銀層。
一般而言數千兆赫的高頻信號係在1μm左右的表層上傳遞,頻率越高則越在接近表面之處傳遞,故只要表面存在有高濃度銀(Ag)層,與以往不具有高濃度銀(Ag)層之接合線相比,其信號量將增加,並且可使信號波形穩定。
鈀(Pd)之範圍在2.5至4.0質量%時,若金(Au)之範圍在1.5至2.5質量%內,則FAB之熔融焊球將不會使晶片產生破裂,可獲得
穩定的接合特性。
(微量添加元素)
本發明之銀-鈀-金基合金,其中得添加總量為5~300質量ppm的銠(Rh)、釕(Ru)、銥(Ir)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、錳(Mn)、銦(In)、矽(Si)、鍺(Ge)、錫(Sn)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、鈦(Ti)、釔(Y)、鈣(Ca)、鑭(La)、銪(Eu)或銻(Sb)中的至少1種元素。該等微量添加元素雖不會使Ag-Pd-Au基合金的表面偏析層產生變化,然而由於其接合特性較無高濃度純銀層之Ag-Pd-Au基合金更具有效果,因此於本發明之Ag-Pd-Au基合金中亦予以採納。具體言之,熔融焊球與鋁(Al)金屬或鋁(Al)合金之焊墊電極之接合性,尤其是長期間之穩定性方面具有效果。又,在銀-鈀-金基合金於預定範圍內添加銠(Rh)、釕(Ru)、銥(lr)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、錳(Mn)、銦(In)、矽(Si)、鍺(Ge)、錫(Sn)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、鈦(Ti)、釔(Y)、鈣(Ca)、鑭(La)、銪(Eu)或銻(Sb)之元素時,得於不損及FAB之形狀下增加接合線之韌性。然而,若該等元素之合計小於5質量ppm,將不會產生添加後之效果,超過300質量ppm時,形成FAB時熔融焊球之結晶粒將變得過硬而產生晶片破裂。因此,本發明係使銠(Rh)、釕(Ru)、銥(Ir)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、錳(Mn)、銦(In)、矽(Si)、鍺(Ge)、錫(Sn)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、鈦(Ti)、釔(Y)、鈣(Ca)、鑭(La)、銪(Eu)或銻(Sb)之中的至少1種元素總量在5~300質量ppm的範圍。一般接合線中該等微量添加元素以合計在100質量ppm以下使
用者為多,因此該等微量添加元素較佳為5至100質量ppm。
此外,焊墊電極較佳為由鋁(Al)、鈀(Pd)或金(Au)或鉑(Pt)之表層所構成的電極墊。本發明之銀-鈀-金三元合金及銀-鈀-金三元系合金之接合線因具有低熔點之高濃度純銀層,故該等電極墊與FAB所致接合性良好。
本發明之銀-鈀-金三元合金及銀-鈀-金三元系合金之銀-鈀-金基合金接合線,可確實地使適合用於高速信號之傳輸的高濃度銀(Ag)之高濃度純銀層形成,因銀-鈀-金三元合金及銀-鈀-金三元系合金之芯材附加有高濃度純銀層及低濃度金(Au)層,故與焊墊之接合性較以往之接合線更良好,可形成適合穩定傳送數千兆至數十千兆赫之高頻信號的富銀合金的信號層。
又,本發明之銀-鈀-金基合金接合線,因高濃度純銀層之厚度薄,故具有金屬線本身之大機械強度,且具有與現有接合線相同的優異迴圈特性。
又,FAB特性等之接合特性,因低熔點之高濃度純銀層位於表層,故就熔融焊球與焊墊電極之接合性及次級接合性而言,具有比以往的接合線更優良的追加效果。特別是,於焊墊電極的表層係由鋁(Al)、鈀(Pd)或金(Au)或鉑(Pt)所構成之電極焊墊之情形下,其接合強度為穩定。
又,本發明之銀-鈀-金基合金接合線,因對接合線之機械強度產生影響的鈀(Pd)添加量為4.0質量%以下及金(Au)添加量為
2.5質量%以下,故亦無因低熔點之表面偏析層而導致形成FAB時熔融焊球之結晶粒變得過硬之情形。又,本發明之銀-鈀-金基合金接合線,即使在使用由純度99.9質量%以上之鋁(Al)金屬或0.5至2.0質量%之矽(Si)或銅(Cu)及剩餘部分純度99.9質量%以上之鋁(Al)合金構成之柔軟鋁墊之情形下,亦無因低熔點之表面偏析層而產生晶片破裂或墊片翹曲外翻產生之情形。結果,即使在室溫大氣中放置一定時間,亦不會於接合界面產生位移,具有可使高頻信號穩定傳送的效果。
第一圖為表示本發明高濃度純銀層分布之剖面示意圖,上方之曲線表示銀(Ag)濃度,下方之曲線表示金(Au)濃度。
第二圖係伴隨實施品1及比較品22之時間的電壓變化之圖形(L字形曲線及階梯形曲線)之圖。
第三圖表示實施品1之最表面附近的定性分析結果。
製作具有表1所示成分組成的銀-鈀-金三元合金及銀-鈀-金三元系合金(使兩者中鈀(Pd)及金(Au)之純度均為99.99質量%以上,銀(Ag)純度為99.999質量%以上,而作為微量添加元素,則使用銠(Rh)、釕(Ru)、銥(Ir)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、錳(Mn)、銦(In)、矽(Si)、鍺(Ge)、錫(Sn)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、鈦(Ti)、釔(Y)、鈣(Ca)、鑭(La)、銪(Eu)、銻(Sb)之合計5至300ppm)。又,其製造方法係與一般的純金接合線相同地進行
溶解,且於惰性氣體氛圍下連續鑄造至直徑8mm。接著將該連續鑄造之粗線用鑽石模進行減面率99.99%以上的連續拉線至20μm的最終線徑,再以濕式的冷作方式實施剖面減少率為99.99%以上之連續冷間拉線,並施予既定的調質熱處理,以製造線徑為20μm的本發明之接合線(以下稱「實施品」)1~21。
實施例1至9係關於申請專利範圍第1項之實施品,實施例10至21係關於申請專利範圍第2項之實施品。
[表1]
以與實施例相同之方式製造不在本發明組成範圍的表1所示成分組成之比較品的接合線22至25(以下稱為「比較品」)。
另外,比較品25與實施例相同地,係將連續鑄造的直徑8mm粗線以80℃的稀硝酸進行酸洗後所得的線材進行連續拉線(縮徑),並形成表層無表面偏析層之接合線。因此,比較品25的組成範圍雖在本發明的範圍內,但在酸洗此點與實施品不同。
此外,在本發明及比較例中之熱調質處理與金線之情形相同,其係於管狀爐調整溫度及速度,以調整拉伸斷裂試驗機所致的測定予以延伸成為預定值之熱處理,在該熱調質處理中,於實施品表面經偏析的環狀高濃度純銀層並未消失。
將具有實施品1之組成的銀-鈀-金基合金在惰性環境下連續鑄造成直徑8mm之粗線。將該粗線以冷水連續拉線,予以熱調質處理使其伸長率成為4%,以獲得直徑20μm之接合線。對於該接合線之銀(Ag)及金(Au)元素,進行自表層至中心方向之深度方向的歐格(Auger)分析。該結果係如第一圖上側之示意圖所示變成曲線及下側之曲線。
如第一圖之示意圖所示,實施品自表面至10nm附近存在高濃度銀(Ag)之漸減層,相對地,金(Au)之合金化元素則存在相反的低濃度之漸增層。此外,鈀(Pd)濃度雖無圖示,不過即使在高濃度純銀層中或芯材中均大致為固定。
將實施品1的接合線在室溫的大氣中放置30天,並用硫化膜厚測量機(CERMA PRECISION公司製QC-200),以連續電化學還原法測量最外層的硫化銀(Ag2S)的膜厚。其結果未檢測出硫化銀(Ag2S)膜。該結果顯示於第二圖的紅色線(L形曲線)。
將比較品22之接合線與實施品1相同地,在室溫之大氣中放置30天,測定硫化銀(Ag2S)膜厚。其結果,檢測出硫化銀(Ag2S)膜。使其如第二圖之綠線(階梯狀曲線)所示。
詳述之,第二圖是將伴隨時間的電壓變化予以圖形化者。在形成有硫化銀(Ag2S)的比較品22之情形,即使電壓在-0.25至-0.80V之區間隨時間變化的情形中,如第二圖之綠線(階梯狀曲線)所示,在硫化銀(Ag2S)膜存在之範圍,會產生電壓不變化的現象。另一方面,實施品1之接合線,在前述的電壓之區間,並未觀察到前述的階梯狀現象,而如第二圖之紅線(L字形曲線)所示,隨著時間之經過而產生電壓變化。因並無電壓無變化的區域,故可知實施品1之接合線最表面並未形成硫化銀(Ag2S)膜。
又,以掃描型歐格(Auger)分析裝置(VG公司製MICROLAB-310D)將實施品1最表面加以定性分析係檢測出硫(S)。該定性分析結果如第三圖所示。
如第三圖所示,可知在實施品1之接合線最表面存在有硫(S)。然而,由於第二圖之結果並未檢測出硫化銀(Ag2S)膜,實施品1的接合線的硫(S)與存在於最外層表面的銀(Ag)進行反應並未形成堅固的硫化銀(Ag2S)膜,而是物理性吸附之不穩定的硫化銀層的狀態。又,由第三圖顯然可知,在實施品1之接合線最表面之金屬元素並未檢測出銀(Ag)以外之鈀(Pd)與金
(Au),實質上僅為高濃度之銀(Ag)層,故以高速信號層而言為最適合的構成。
將該等實施品1~8、14~25及76及比較品77、78、80、81設置於泛用的打線接合機,在虛擬半導體IC(將測試圖案植入晶圓者,簡稱「測試元件群(TEG;Test Element Group)」)表面的70μm2的鋁焊墊(由鋁(Al)-1.0質量%Si-0.5質量%Cu合金所構成,在表面蒸鍍有20nm的金(Au)層)上,在噴附氮氣的氛圍下,以38μm為目標製作焊球(FAB),並在下述條件下進行球焊:基材的加熱溫度:200℃;迴路長度:5mm;迴路高度:220μm;壓接焊球直徑:50μm;壓接焊球高度:10μm。鋁飛濺量的測量方法係使用泛用的掃描型電子顯微鏡(Scanning electron microscope;SEM)從正上方觀察各打線的壓接焊球,並以壓接焊球的外圍部為基點,量測鋁從壓接焊球濺出至最遠的位置。濺出的鋁量未滿2μm的情況判定為○;超過2μm未滿4μm的情況為△;超過4μm為X。關於該鋁飛濺測試的評估結果如表2所示。
更進一步觀察關於該試片的晶片受損。晶片受損測試,係以氫氧化鈉水溶液將鋁焊墊溶解後,以實體顯微鏡觀察晶片的結果。表2中的「晶片受損測試」,存在些微損傷及裂縫的情況為X;完全無損傷及裂縫的情況為○,分別顯示於表2。
接著,信號波形的劣化測試係用四點探針量測法來進行測量。試片係使用實施品.比較品的線材(分別為線徑20μm、長度100mm)。測量係使用泛用性函數產生器,將10GHz、2V的脈衝波形發送至實施品線材及比較品線材,並用可測試10GHz頻帶頻率之脈衝波形的既定泛用數位示波器及探針來量測信號波形。測量用探針間隔為50mm。信號波形之劣化程度,係測量「向線材發送的輸出信號波形到達輸入電壓值為止」的延遲時
間。此處,從實驗結果可確認,以往的線材(Ca15ppm、Eu20ppm及剩餘部分為99.999質量%Au)的信號延遲時間為20%。因此,信號延遲時間的判定為:延遲時間與以往的線材相比,未滿20%的情況為○;延遲大於20%的情況為X。關於信號波形之劣化測試的實施品.比較品的線材的評估結果如表2所示。
使用與鋁飛濺測試相同的構件及評估裝置,對實施品線材及比較品線材,以打線接合機對專用的IC晶片進行接合,以100點為基準,使用Dage公司製的「萬能接合測試機(BT)(型式4000)」(商品名),對球焊時的壓接焊球之剪切強度進行評估。該壓接焊球的剪切評估結果如表2。
表2中,「焊球剪切」係顯示第一接合中之剪切負載值,○為12kg/mm2以上、△為10kg/mm2以上小於12kg/mm2,而×表示小於10kg/mm2或者發生球剝離之情形。
由表2結果明顯可知,就信號波形之劣化測試,本發明實施品1至21全部無觀察到劣化,相對於此,比較品22至25皆較差。
又,就鋁飛濺測試、晶片受損測試及壓接焊球之剪切強度測試,本發明之實施品1至21均為良好,相對於此,比較品22壓接焊球之剪切強度測試、比較品23與24之鋁飛濺測試及晶片受損測試均較差。
本發明之接合線,對數千兆赫乃至十數千兆赫之超高頻信號之傳輸而言為最適合的接合線,適於廣泛高頻信號之傳輸的信號用接合線之用途。
Claims (6)
- 一種高速信號線用接合線,其係以焊球(FAB)連接半導體元件之焊墊電極與配線基板上之引線電極用之銀-鈀-金基合金接合線,其特徵為,該接合線係由鈀(Pd)2.5至4.0質量%、金(Au)1.5至2.5質量%及剩餘部分純度99.99質量%以上之銀(Ag)所構成之三元合金,該接合線表面係由連續鑄造後所縮徑的連續鑄造面所構成,其接合線剖面係由表面偏析層及芯材所構成,該表面偏析層係由銀(Ag)含量自最表面朝向芯材漸減,且金(Au)含量漸增的合金區域所構成。
- 一種高速信號線用接合線,其係以焊球(FAB)連接半導體元件之焊墊電極與配線基板上之引線電極用之含有微量添加元素的銀-鈀-金基合金接合線,其特徵為,該接合線含有鈀(Pd)2.5至4.0質量%、金(Au)1.5至2.5質量%以及銠(Rh)、銥(Ir)、釕(Ru)、銅(Cu)、鎳(Ni)、鐵(Fe)、鎂(Mg)、鋅(Zn)、鋁(Al)、銦(In)、矽(Si)、鍺(Ge)、鈹(Be)、鉍(Bi)、硒(Se)、鈰(Ce)、釔(Y)、鑭(La)、鈣(Ca)或銪(Eu)中至少一種以上,由添加微量元素之合計為5至300質量ppm及剩餘部分為純度99.99質量%以上之銀(Ag)所構成之三元系合金,該接合線表面係由在連續鑄造後經縮徑的連續鑄造面所構成,其接合線剖面係由表面偏析層與芯材所構成,該表面偏析層係由銀(Ag)含量自最表面朝向芯材漸減,且金(Au)含量漸增之合金區域所構成。
- 如申請專利範圍第1或2項之高速信號線用接合線,其中前述接合線之銀(Ag)為純度99.999質量%以上。
- 如申請專利範圍第1或2項之高速信號線用接合線,其中前述高速信號為1至15千兆赫之頻率。
- 如申請專利範圍第1或2項之高速信號線用接合線,其中前述焊墊電極為純度99.9質量%以上之鋁(Al)金屬或0.5至2.0質量%之矽(Si)或銅(Cu)及剩餘部分為純度99.9質量%以上之鋁(Al)合金。
- 如申請專利範圍第1或2項之高速信號線用接合線,其中前述焊墊電極係由金(Au)、鈀(Pd)或鉑(Pt)之表層所構成之電極墊。
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SG11201608819VA (en) | 2014-04-21 | 2016-12-29 | Nippon Steel & Sumikin Mat Co | Bonding wire for semiconductor device |
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JP5669335B1 (ja) * | 2014-09-26 | 2015-02-12 | 田中電子工業株式会社 | 銀金合金ボンディングワイヤ |
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DE112015005172B4 (de) | 2015-07-23 | 2022-01-05 | Nippon Micrometal Corporation | Bonddraht für Halbleitervorrichtung |
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