CN104157625B - 高速信号线用接合线 - Google Patents
高速信号线用接合线 Download PDFInfo
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- CN104157625B CN104157625B CN201410108092.5A CN201410108092A CN104157625B CN 104157625 B CN104157625 B CN 104157625B CN 201410108092 A CN201410108092 A CN 201410108092A CN 104157625 B CN104157625 B CN 104157625B
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Abstract
本发明的目的是提供一种银‑钯‑金(Ag‑Pd‑Au)基合金的高速信号线用接合线,其即使在接合线表面形成不稳定的硫化银层时,仍无坚固的硫化银(Ag2S)膜,并可传输稳定的数千兆赫(giga Hertz,GHz)带等的超高频信号。本发明的解决方法是提供一种高速信号线用接合线,其是由钯(Pd)2.5~4.0质量%、金(Au)1.5~2.5质量%及剩余部分为纯度99.99质量%以上的银(Ag)所构成的三元合金,该接合线剖面是由表皮膜与芯材所构成,该表皮膜是由在连续铸造后所缩径的连续铸造面与表面偏析层所构成,该表面偏析层是由较芯材含量渐增的银(Ag)且含量渐减的金(Au)的合金区域所构成。
Description
技术领域
本发明是关于高速信号线用接合线,其连接半导体元件的焊垫电极与配线基板上的引线电极,特别是关于使用1至15千兆赫频率的高速信号线用接合线。
背景技术
近年来,伴随半导体装置制造技术的发展,将使用超过数千兆赫频带的超高频的高速信号线用半导体集成电路装置组装于移动电话机等已逐渐增加。在高频传输中,以往一般是持续使用纯度99.99质量%以上的高纯度金接合线。但是若于数千兆赫至十数千兆赫带中使用通常的接合线将超高频的高速·超高速信号线用的半导体元件与配线电极等连接时,由于超高频信号流经接合线的表皮层,故超高频信号所致高频电阻将更加增大。因而,使用高纯度金接合线是造成接收灵敏度或发送输出等降低的原因。
因此发明人已就电阻系数(electrical resistivity)值相对于高纯度金(Au)的2.4μΩcm,电阻系数值为1.6μΩcm纯度99.99%的高纯度银(Ag)等的金属线进行研究。然而,溶解·铸造后洗净之后,经过连续拉线再制造接合线的过程,因大量的高纯度银(Ag)金属线过软而不适于实用化。此外,在大气中银(Ag)被硫化而在接合线的表皮层形成硫化银(Ag2S)膜,并使熔融焊球变硬,故会有因焊球(FAB)而伤及球焊性能的缺点。因而,纯银接合线并不直接使用于流经数μm的表皮层的高频传输,虽然在日本特开昭57-21830号公报中,有公开一种银-钯合金金属线,但是在如日本特开2003-59963号公报(后述专利文献1)所公开的那样,其仅是对纯银接合线进行纯金电镀而将其实用化。如此,纯银接合线之所以未实用化,是因为其在作为用于超高频的高速信号线前,并无法形成稳定的熔融焊球的原因。也就是说,如果打算使用于焊球(FAB)所导致的球焊(ball bonding),而形成熔融焊球时,因形成于金属线表面的坚固的硫化银(Ag2S)会使熔融焊球变硬,故在第一焊接时将会产生晶片破裂等。
另一方面,作为利用电导性高的银的电阻系数的目的,已有开发出一种添加10000至55000质量ppm(1至5.5质量%)的金及1至100质量ppm的铋于银的银-金二元系合金的接合线,且并未使其电阻系数值降低至如同目前广泛使用的纯度99%的金金属线同样的3.1μΩcm以下,此外亦已开发出在该金属线添加了20000质量ppm以下钯的银-金-钯三元系合金的接合线(日本特开2012-49198号公报(后述的专利文献2))。在此,发明人认为将钯的添加量设在20000质量ppm(2质量%)以下,是因为“若添加超过20000质量ppm时,焊球的硬度将变高,而发生球焊时的焊垫破损(参照该公报0021段落)”。
此外,还公开一种球焊用金属线,其是选自钙、铜、钆(Gd)、钐(Sm)的二种以上元素合计含有5至500重量ppm,选自钯、金的一种以上的元素合计含有0.5至5.0重量%,其余为由银及不可避免杂质所构成(日本特开2012-151350号公报(后述专利文献3))。但是,该接合线是以球焊法来连接半导体元件的经镍/钯/金被覆的电极及电路配线基板的导体配线用的接合用金属线(W),并非是将铝(Al)合金(Al-Si-Cu等)焊垫电极接合的。因为“铝(Al)与银(Ag)的接合处易腐蚀”焊垫(参照日本特开2012-151350号公报(后述专利文献3)0015段落))。
此外,还公开一种接合线,其“以银(Ag)为主成分,包含选自10000至90000质量ppm的金(Au)、10000至50000质量ppm的钯(Pd)、10000至30000质量ppm的铜(Cu)、10000至20000质量ppm的镍(Ni)的至少一种以上的成分,其中氯(Cl)含量小于1质量ppm”(日本特开2012-99577号公报(后述专利文献4))。但是,该接合线,如“波长380至560nm的光的反射率95%以上,故使用蓝色系的发光的白色LED亦为有效(参照该公报0010段落)”所示为LED用,与高速信号线用接合线,在目的·效果上不同。
专利文献1:日本特开2003-59963号公报;
专利文献2:日本特开2012-49198号公报;
专利文献3:日本特开2012-151350号公报;
专利文献4:日本特开2012-99577号公报。
发明内容
发明要解决的问题本发明的目的是提供一种银-钯-金基合金的高速信号线用接合线,其借由在银-钯-金基合金的接合线表面,将高浓度的纯银层及低浓度的金合金 化层(以下称为“高浓度纯银层”)予以偏析,而因该经偏析的均匀厚度的高浓度纯银层的形成,使得焊球(FAB)的接合性能变得良好的同时,即使放置于大气中,可于一定期间中阻止硫化银的形成或其进入至内部,并传输稳定的数千兆赫频带等的超高频信号。
解决问题的方法本发明用以解决问题的高速信号线用接合线之一,是一种含有微量添加元素的Ag-Pd-Au基合金接合线,其是以焊球(FAB)连接用于半导体元件的焊垫电极与配线基板上的引线电极,该接合线是由钯(Pd)2.5至4.0质量%、金(Au)1.5至2.5质量%及剩余部分为纯度99.99质量%以上的银(Ag)所构成的三元合金,该接合线表面是由在连续铸造后经缩径的连续铸造面所构成,其接合线的剖面是由表面偏析层与芯材所构成,该表面偏析层是由较芯材含量渐增的银(Ag)且含量渐减的金(Au)的合金区域所构成的高浓度纯银层。
另外,用以解决本发明问题的高速信号线用接合线的一种是一含有微量添加元素的银-钯-金基合金接合线,其是以焊球(FAB)连接半导体元件的焊垫电极与配线基板上的引线电极,该接合线是由钯(Pd)2.5至4.0质量%、金(Au)1.5至2.5质量%、以及铑(Rh)、铱(Ir)、钌(Ru)、铜(Cu)、镍(Ni)、铁(Fe)、镁(Mg)、锌(Zn)、铝(A1)、铟(In)、硅(Si)、锗(Ge)、铍(Be)、铋(Bi)、硒(Se)、铈(Ce)、钇(Y)、镧(La)、钙(Ca)或铕(Eu)中至少一种以上的微量添加元素其合计为5至300质量ppm,及剩余部分为纯度99.99质量%以上的银(Ag)所构成的三元系合金,该接合线表面由在连续铸造后经缩径的连续铸造面所构成,而该接合线剖面由表面偏析层及芯材所构成,其表面偏析层是由含量较芯材渐增的银(Ag)且含量渐减的金(Au)的合金区域所构成的高浓度纯银层。
另外,本发明的用以解决本发明问题的高速信号线用银-钯-金基合金接合线的优选实施方式之一是前述接合线的银为纯度99.999质量%以上。
另外,本发明的用以解决问题的高速信号线用银-钯-金基合金接合线的优选实施方式之一是前述高速信号为1至15千兆赫的频率。
另外,本发明的用以解决问题的高速信号线用银-钯-金基合金接合线的优选实施方式之一为前述焊垫电极是(1)纯度99.9质量%以上的铝(A1)金属或(2)铝合金,其包含0.5至2.0质量%的硅(Si)或铜(Cu)及剩余部分纯度99.9质量%以上的铝(Al)。
另外,用以解决本发明问题的高速信号线用银-钯-金基合金接合线的优选实施方式之一是前述焊垫电极是由金(Au)、钯(Pd)或铂(Pt)的表层所构成的电极垫。
此外,本发明的用以解决问题的高速信号线用银-钯-金基合金接合线,与纯金接合线相同地,是用金刚石拉丝模(Diamond dice)使剖面减少率经99%以上缩径,并连续地进行冷间拉线加工,其后借由调质热处理来调整接合线的机械性性能。该热调质处理,温度低、处理时间亦短,故高浓度纯银层的表面偏析层不会消失。
主添加元素:
于本发明中,之所以使用纯度99.99质量%以上的银(Ag)于剩余部分,是为了使银(Ag)含量多的合金的表面偏析层均匀地在金属线全部边缘形成的缘故。这是因为纯度低时,因杂质的影响会使得银(Ag)含量多的合金的表面偏析层厚度有不规则的顾虑。
于纯银接合线的情况中,硫化物比氧化物更稳定,故该硫化物较为不佳。以往的纯银接合线中,是在大气中的高纯度银(Ag)表面上使表面的银(Ag)变为离子,并与大气中的硫化氢键结而形成硫化物。该硫化物虽最初于纯银线表面形成不稳定的硫化银层,但硫化银层最后会在纯银接合线的表面成长为数纳米左右的坚固的硫化银(Ag2S)膜并确定保持于该纯银接合线的表面上。而且,发明人认为存在该表皮层的硫化合物将沿着晶界移动并进一步进入纯银接合线内部,使坚固的硫化银(Ag2S)膜扩展。
在纯银(Ag)中将钯(Pd)及金(Au)予以合金化的大量的银-钯-金合金的情形,高浓度纯银层的硫化银层的形成较纯银接合线更弱。而且,在本发明的银-钯-金基合金的情形,金(Au)的浓度从表层越往芯材内部将渐增,在芯材方面因有钯(Pd)及金(Au)4.0至6.5质量%的含量,故得使形成于表面的硫化银(Ag2S)膜持续进入至内部的时间延迟。
本发明将由银-钯-金基合金所构成的接合线的钯(Pd)含量设成较金(Au)的含量更多的原因在于,以相对于耐硫化性较银(Ag)更高价的银-钯基质的构成,在该银-钯基质中可使更高价的金(Au)所导致的表面偏析层形成的缘故。
于本发明中添加预定量的钯(Pd)的目的在于使硫化的进行延迟。在湿气多的环境下使用接合线的情形时,因接合线表面易于硫化,须使用金属线本身为耐硫化性的由银-钯-金基合金所构成的金属线。钯(Pd)含量为2.5质量%时,因纯银接合线表面会形成坚固的硫化银(Ag2S)膜因此得使其延迟。另一方面,若钯(Pd)超过2.5质量%时,因银浓度降低而使其高频性能稍有劣化,因此作为超高频信号线而言将不适当,然而由于有高浓度纯银层形成,故实用上至4.0质量%为止将不会产生影响。
另外,钯(Pd)是一使硬度显著增加的合金化元素,钯(Pd)含量为2.5质量%以上时,在形成焊球(FAB)时,熔融焊球的硬度变高而有导致球焊时晶片破裂的顾虑(参照专利文献2第0021段落),然而借由使金(Au)的含量增多并设置低熔点的高浓度纯银层,且钯(Pd)含量在4.0质量%以内的范围则得以解决此问题。此外,钯(Pd)即使在高浓度纯银层中或芯材中亦维持大致固定的浓度。
表面偏析:
本发明中,金(Au)的合金化元素比重较银(Ag)及钯(Pd)高,相对于银-钯基合金基质可发挥表面偏析效果。经表面偏析的高浓度纯银层,因是利用稀释合金的固相·气相间的表面现象的,故该高浓度纯银层可遍及接合线全周均匀地形成一定宽度的层。于该高浓度纯银层中,自金属线表面观察中心时,若银(Ag)浓度渐减而变低时(图1上侧的曲线),相反地金(Au)的合金化元素浓度将渐增而变高(图1下侧的曲线)。接着,就会在金属线内存在有银(Ag)浓度相对高的高浓度纯银层区域与相对地低浓度的芯材区域的二区域。此即为表面偏析之现象。
因此,即使在高浓度金属线表面形成不稳定的硫化银层,伴随着与较银(Ag)高价的合金化元素(钯(Pd)及金(Au))的存在,在室温大气中使用接合线作为制造后信号线为止的放置期间中,得使银合金表面的硫化合物至内部的进行延迟的同时,亦延迟在银合金表面坚固的硫化银(Ag2S)膜的形成。
因高纯度的金(Au)相对于高纯度银-钯合金基质会产生表面偏析,若于连续铸造时于高纯度的银(Ag)中添加钯(Pd)及金(Au),银(Ag)的高浓度区域与金(Au)的低浓度区域的高浓度纯银层将于表皮层附近形成环形状。接合线的制造步骤中,若保持该高浓度层的状态,以水进行冷却等并以冷作方式进行连续拉线,则该高浓度层与细线的线径将会等比例地缩径。因而,此高浓度纯银层可利用于数千兆赫(Hz)以上的高频信号中。
将直径8mm的连续铸造金属线缩径至20μm的接合线为止的情形(剖面减少率99.9%以上)中,接合线的表皮理论上会残留着自表面数nm以下的银(Ag)的高浓度层,实际上可自直径8mm的连续铸造金属线至直径20μm的金属线的拉线阶段中,观察到如图1般的银(Ag)的高浓度区域(图1上侧的曲线)与金(Au)的低浓度区域(图1下侧的曲线)的高浓度纯银层。
一般而言数千兆赫的高频信号是在1μm左右的表层上传递,频率越高则越在接 近表面之处传递,故只要表面存在有高浓度银(Ag)层,与以往不具有高浓度银(Ag)层的接合线相比,其信号量将增加,并且可使信号波形稳定。
钯(Pd)的范围在2.5至4.0质量%时,若金(Au)的范围在1.5至2.5质量%内,则FAB的熔融焊球将不会使晶片产生破裂,可获得稳定的接合性能。
微量添加元素:
本发明的银-钯-金基合金,其中得添加总量为5~300质量ppm的铑(Rh)、钌(Ru)、铱(Ir)、铜(Cu)、镍(Ni)、铁(Fe)、镁(Mg)、锌(Zn)、铝(Al)、锰(Mn)、铟(In)、硅(Si)、锗(Ge)、锡(Sn)、铍(Be)、铋(Bi)、硒(Se)、铈(Ce)、钛(Ti)、钇(Y)、钙(Ca)、镧(La)、铕(Eu)或锑(Sb)中的至少1种元素。这些微量添加元素虽不会使Ag-Pd-Au基合金的表面偏析层产生变化,然而由于其接合性能较无高浓度纯银层的Ag-Pd-Au基合金更具有效果,因此于本发明的Ag-Pd-Au基合金中亦予以采纳。具体而言,熔融焊球与铝(A1)金属或铝(A1)合金的焊垫电极的接合性,尤其是长期间的稳定性方面具有效果。另外,在银-钯-金基合金于预定范围内添加铑(Rh)、钌(Ru)、铱(lr)、铜(Cu)、镍(Ni)、铁(Fe)、镁(Mg)、锌(Zn)、铝(Al)、锰(Mn)、铟(In)、硅(Si)、锗(Ge)、锡(Sn)、铍(Be)、铋(Bi)、硒(Se)、铈(Ce)、钛(Ti)、钇(Y)、钙(Ca)、镧(La)、铕(Eu)或锑(Sb)的元素时,得于不伤及FAB的形状下增加接合线的韧性。然而,若这些元素的合计小于5质量ppm,将不会产生添加后的效果,超过300质量ppm时,形成FAB时熔融焊球的结晶粒将变得过硬而产生晶片破裂。因此,本发明是使铑(Rh)、钌(Ru)、铱(Ir)、铜(Cu)、镍(Ni)、铁(Fe)、镁(Mg)、锌(Zn)、铝(Al)、锰(Mn)、铟(In)、硅(Si)、锗(Ge)、锡(Sn)、铍(Be)、铋(Bi)、硒(Se)、铈(Ce)、钛(Ti)、钇(Y)、钙(Ca)、镧(La)、铕(Eu)或锑(Sb)之中的至少1种元素总量在5~300质量ppm的范围。一般接合线中这些微量添加元素以合计在100质量ppm以下使用者为多,因此这些微量添加元素优选为5至100质量ppm。
此外,焊垫电极优选为由铝(Al)、钯(Pd)或金(Au)或铂(Pt)的表层所构成的电极垫。本发明的银-钯-金三元合金及银-钯-金三元系合金的接合线因具有低熔点的高浓度纯银层,故这些电极垫与FAB所致接合性良好。
本发明的银-钯-金三元合金及银-钯-金三元系合金的银-钯-金基合金接合线,可确实地使适合用于高速信号的传输的高浓度银(Ag)的高浓度纯银层形成,因银-钯-金三元合金及银-钯-金三元系合金的芯材附加有高浓度纯银层及低浓度金(Au)层,故与焊 垫的接合性较以往的接合线更良好,可形成适合稳定传送数千兆至数十千兆赫的高频信号的富银合金的信号层。
另外,本发明的银-钯-金基合金接合线,因高浓度纯银层的厚度薄,故具有金属线本身的大机械强度,且具有与现有接合线相同的优异循环性能。
另外,FAB性能等的接合性能,因低熔点的高浓度纯银层位于表层,故就熔融焊球与焊垫电极的接合性及次级接合性而言,具有比以往的接合线更优良的追加效果。特别是,于焊垫电极的表层是由铝(Al)、钯(Pd)或金(Au)或铂(Pt)所构成的电极焊垫的情形下,其接合强度为稳定。
另外,本发明的银-钯-金基合金接合线,因对接合线的机械强度产生影响的钯(Pd)添加量为4.0质量%以下及金(Au)添加量为2.5质量%以下,故亦无因低熔点的表面偏析层而导致形成FAB时熔融焊球的结晶粒变得过硬的情形。另外,本发明的银-钯-金基合金接合线,即使在使用由纯度99.9质量%以上的铝(Al)金属或0.5至2.0质量%的硅(Si)或铜(Cu)及剩余部分纯度99.9质量%以上的铝(Al)合金构成的柔软铝垫的情形下,亦无因低熔点的表面偏析层而产生晶片破裂或垫片翘曲外翻产生的情形。结果,即使在室温大气中放置一定时间,亦不会于接合界面产生位移,具有可使高频信号稳定传送的效果。
附图说明
图1为表示本发明高浓度纯银层分布的剖面示意图,上方的曲线表示银(Ag)浓度,下方的曲线表示金(Au)浓度。
图2是伴随实施品1及比较品22的时间的电压变化的图形(L字形曲线及阶梯形曲线)的图。
图3表示实施品1的最表面附近的定性分析结果。
具体实施方式
以下通过具体实施例详细说明本发明的实施过程和产生的有益效果,旨在帮助阅读者更好地理解本发明的实质和特点,不作为对本案可实施范围的限定。
制作具有表1所示成分组成的银-钯-金三元合金及银-钯-金三元系合金(使两者中钯(Pd)及金(Au)的纯度均为99.99质量%以上,银(Ag)纯度为99.999质量%以上,而 作为微量添加元素,则使用铑(Rh)、钌(Ru)、铱(Ir)、铜(Cu)、镍(Ni)、铁(Fe)、镁(Mg)、锌(Zn)、铝(Al)、锰(Mn)、铟(In)、硅(Si)、锗(Ge)、锡(Sn)、铍(Be)、铋(Bi)、硒(Se)、铈(Ce)、钛(Ti)、钇(Y)、钙(Ca)、镧(La)、铕(Eu)、锑(Sb)的合计5至300ppm)。另外,其制造方法是与一般的纯金接合线相同地进行溶解,且于惰性气体氛围下连续铸造至直径8mm。接着将该连续铸造的粗线用金刚石拉丝模进行减面率99.99%以上的连续拉线至20μm的最终线径,再以湿式的冷作方式实施剖面减少率为99.99%以上的连续冷成型拉线,并施予既定的调质热处理,以制造线径为20μm的本发明的接合线(以下称“实施品”)1~21。
实施例1至9是按照如下技术方案制备的实施品:
一种高速信号线用接合线,该接合线是由钯2.5至4.0质量%、金1.5至2.5质量%及剩余部分纯度99.99质量%以上的银所构成的三元合金,该接合线表面是由连续铸造后所缩径的连续铸造面所构成,其接合线剖面是由表面偏析层及芯材所构成,该表面偏析层是由银含量自最表面朝向芯材渐减,且金含量渐增的合金区域所构成。
实施例10至21是按照如下技术方案制备的实施品:
一种高速信号线用接合线,该接合线含有钯2.5至4.0质量%、金1.5至2.5质量%以及铑、铱、钌、铜、镍、铁、镁、锌、铝、铟、硅、锗、铍、铋、硒、铈、钇、镧、钙或铕中至少一种以上,由微量添加元素的合计为5至300质量ppm及剩余部分为纯度99.99质量%以上的银所构成的三元系合金,
该接合线表面是由在连续铸造后经缩径的连续铸造面所构成,其接合线剖面是由表面偏析层与芯材所构成,该表面偏析层是由银含量自最表面朝向芯材渐减,且金含量渐增的合金区域所构成。
比较例
以与实施例相同的方式制造不在本发明组成范围的表1所示成分组成的比较品的接合线22至25(以下称为“比较品”)。
另外,比较品25与实施例相同地,是将连续铸造的直径8mm粗线以80℃的稀硝酸进行酸洗后所得的线材进行连续拉线(缩径),并形成表层无表面偏析层的接合线。因此,比较品25的组成范围虽在本发明的范围内,但在酸洗此点与实施品不同。
此外,在本发明及比较例中的热调质处理与金线的情形相同,其是于管状炉调整温度及速度,以调整拉伸断裂试验机所致的测定予以延伸成为预定值的热处理,在该热调质处理中,于实施品表面经偏析的环状高浓度纯银层并未消失。
高浓度纯银层的确认
将具有实施品1的组成的银-钯-金基合金在惰性环境下连续铸造成直径8mm的粗线。将该粗线以冷水连续拉线,予以热调质处理使其伸长率成为4%,以获得直径20μm的接合线。对于该接合线的银(Ag)及金(Au)元素,进行自表层至中心方向的深度方向的俄歇(Auger)分析。该结果是如图1上侧的示意图所示变成曲线及下侧的曲线。
如图1的示意图所示,实施品自表面至10nm附近存在高浓度银(Ag)的渐减层,相对地,金(Au)的合金化元素则存在相反的低浓度的渐增层。此外,钯(Pd)浓度虽无图示,不过即使在高浓度纯银层中或芯材中均大致为固定。
硫化银的确认
将实施品1的接合线在室温的大气中放置30天,并用硫化膜厚测量机(CERMAPRECISION公司制QC-200),以连续电化学还原法测量最外层的硫化银(Ag2S)的膜厚。其结果未检测出硫化银(Ag2S)膜。该结果显示于图2的L形曲线(黑色圆点标注的线)。
将比较品22的接合线与实施品1相同地,在室温的大气中放置30天,测定硫化银(Ag2S)膜厚。其结果,检测出硫化银(Ag2S)膜。使其如图2的阶梯状曲线(空白菱形标注的线)所示。
详述之,图2是将伴随时间的电压变化予以图形化的。在形成有硫化银(Ag2S)的比较品22的情形,即使电压在-0.25至-0.80V的区间随时间变化的情形中,如图2的阶梯状曲线所示,在硫化银(Ag2S)膜存在的范围,会产生电压不变化的现象。另一方 面,实施品1的接合线,在前述的电压的区间,并未观察到前述的阶梯状现象,而如图2的L字形曲线所示,随着时间的经过而产生电压变化。因并无电压无变化的区域,故可知实施品1的接合线最表面并未形成硫化银(Ag2S)膜。
另外,以扫描型俄歇(Auger)分析装置(VG公司制MICROLAB-310D)将实施品1最表面加以定性分析以检测出硫(S)。该定性分析结果如图3所示。
如图3所示,可知在实施品1的接合线最表面存在有硫(S)。然而,由于图2的结果并未检测出硫化银(Ag2S)膜,实施品1的接合线的硫(S)与存在于最外层表面的银(Ag)进行反应并未形成坚固的硫化银(Ag2S)膜,而是物理性吸附的不稳定的硫化银层的状态。另外,由图3显然可知,在实施品1的接合线最表面的金属元素并未检测出银(Ag)以外的钯(Pd)与金(Au),实质上仅为高浓度的银(Ag)层,故以高速信号层而言为最适合的构成。
铝飞溅试验
将这些实施品1~21及比较品22~25设置于广泛使用的打线接合机,在虚拟半导体IC(将测试图案植入晶圆者,简称“测试元件群(TEG;Test Element Group)”)表面的70μm2的铝焊垫(由铝(Al)-1.0质量%Si-0.5质量%Cu合金所构成,在表面蒸镀有20nm的金(Au)层)上,在喷附氮气的氛围下,以38μm为目标制作焊球(FAB),并在下述条件下进行球焊:基材的加热温度:200℃;回路长度:5mm;回路高度:220μm;压接焊球直径:50μm;压接焊球高度:10μm。铝飞溅量的测量方法是使用广泛使用的扫描型电子显微镜(Scanning electronmicroscope;SEM)从正上方观察各打线的压接焊球,并以压接焊球的外围部为基点,测量铝从压接焊球溅出至最远的位置。溅出的铝量未满2μm的情况判定为○;超过2μm未满4μm的情况为△;超过4μm为Ⅹ。关于该铝飞溅测试的评估结果如表2所示。
表2
晶片受损测试
更进一步观察关于该试片的晶片受损。晶片受损测试,是以氢氧化钠水溶液将铝焊垫溶解后,以实体显微镜观察晶片的结果。表2中的“晶片受损测试”,存在略微损伤及裂缝的情况为Ⅹ;完全无损伤及裂缝的情况为○,分别显示于表2。
信号波形的劣化测试
接着,信号波形的劣化测试是用四点探针量测法来进行测量。试片是使用实施品·比较品的线材(分别为线径20μm、长度100mm)。测量是使用广泛使用的函数产生器,将10GHz、2V的脉冲波形发送至实施品线材及比较品线材,并用可测试10GHz频带频率的脉冲波形的既定广泛使用的数位示波器及探针来量测信号波形。测量用探针间隔为50mm。信号波形的劣化程度,是测量“向线材发送的输出信号波形到达输入电压値为止”的延迟时间。此处,从实验结果可确认,以往的线材(Ca15ppm、Eu20ppm及剩余部分为99.999质量%Au)的信号延迟时间为20%。因此,信号延迟时间的判定为:延迟时间与以往的线材相比,未满20%的情况为○;延迟大于20%的情况为X。关于信号波形的劣化测试的实施品·比较品的线材的评估结果如表2所示。
压接焊球的剪切强度测试
使用与铝飞溅测试相同的构件及评估装置,对实施品线材及比较品线材,以打线接合机对专用的IC晶片进行接合,以100点为基准,使用Dage公司制的“万能接合测试机(BT)(型式4000)”(商品名),对球焊时的压接焊球的剪切强度进行评估。该压接焊球的剪切评估结果如表2。
表2中,“焊球剪切”是显示第一焊接中的剪切负载值,○为12kg/mm2以上、△为10kg/mm2以上小于12kg/mm2,而×表示小于10kg/mm2或者发生球剥离的情形。
由表2结果明显可知,就信号波形的劣化测试,本发明实施品1至21全部无观察到劣化,相对于此,比较品22至25都较差。
另外,就铝飞溅测试、晶片受损测试及压接焊球的剪切强度测试,本发明的实施品1至21均为良好,相对于此,比较品22压接焊球的剪切强度测试、比较品23与24的铝飞溅测试及晶片受损测试均较差。
工业上可利用性
本发明的接合线,对数千兆赫乃至十数千兆赫的超高频信号的传输而言为最适合的接合线,适于广泛高频信号的传输的信号用接合线的用途。
Claims (6)
1.一种高速信号线用接合线,其是以焊球连接半导体元件的焊垫电极与配线基板上的引线电极用的银-钯-金基合金接合线,其特征为,
该接合线是由钯2.5至4.0质量%、金1.5至2.5质量%及剩余部分纯度99.99质量%以上的银所构成的三元合金,该接合线表面是由连续铸造后所缩径的连续铸造面所构成,其接合线剖面是由表面偏析层及芯材所构成,该表面偏析层是由银含量自最表面朝向芯材渐减,且金含量渐增的合金区域所构成。
2.一种高速信号线用接合线,其是以焊球连接半导体元件的焊垫电极与配线基板上的引线电极用的含有微量添加元素的银-钯-金基合金接合线,其特征为,
该接合线含有钯2.5至4.0质量%、金1.5至2.5质量%以及铑、铱、钌、铜、镍、铁、镁、锌、铝、铟、硅、锗、铍、铋、硒、铈、钇、镧、钙或铕中至少一种以上的微量添加元素其合计为5至300质量ppm及剩余部分为纯度99.99质量%以上的银所构成的三元系合金,
该接合线表面是由在连续铸造后经缩径的连续铸造面所构成,其接合线剖面是由表面偏析层与芯材所构成,该表面偏析层是由银含量自最表面朝向芯材渐减,且金含量渐增的合金区域所构成。
3.如权利要求1或2的高速信号线用接合线,其特征为,其中前述接合线的银为纯度99.999质量%以上。
4.如权利要求1或2的高速信号线用接合线,其特征为,其中前述高速信号为1至15千兆赫的频率。
5.如权利要求1或2的高速信号线用接合线,其特征为,其中前述焊垫电极为(1)纯度99.9质量%以上的铝金属或(2)铝合金,其包含0.5至2.0质量%的硅或铜及剩余部分为纯度99.9质量%以上的铝。
6.如权利要求1或2的高速信号线用接合线,其特征为,其中前述焊垫电极是由金、钯或铂的表层所构成的电极垫。
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JP5399581B1 (ja) | 2014-01-29 |
KR20140134593A (ko) | 2014-11-24 |
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CN104157625A (zh) | 2014-11-19 |
TWI508204B (zh) | 2015-11-11 |
KR101568479B1 (ko) | 2015-11-11 |
JP2014222725A (ja) | 2014-11-27 |
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