CN102130068A - 一种表面有复合镀层的合金型键合丝 - Google Patents
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Abstract
一种表面有复合镀层的合金型键合丝,包括银为主组分的银合金芯材以及在银合金芯材表面的镀层,其特征在于由银为主组分的银合金芯材添加改善延伸性能的微量金属,经过单晶熔炼拉伸成银合金棒材,再进行粗拉伸、中拉伸和表面清洗成银合金芯线并在银合金芯线表面复合电镀后再超细拉伸为表面有复合镀层的合金型键合丝。本发明在后续的超细拉伸过程中不必进行中间退火就具有较好的最终塑性变形能力,在经过带惰性气体保护的动态在线退火后延伸率至少为12%,性能与键合金丝相近,封装键合时只要高纯氮气进行烧球保护即可。替代键合金丝封装后,器件可靠性稳定,与使用键合金丝相比,无明显差异。而且产品成本可以控制在15元/百米左右,性价比高。
Description
技术领域
本发明涉及键合丝,特别是涉及一种表面有复合镀层的合金型键合丝。
背景技术
常用的键合金丝直径在Φ16~38μm。其制作方法是用高纯黄金添加一定量的微量元素,经熔炼铸造成棒材-多次拉伸-动态在线退火-分卷等工序制作而成。由于国际黄金价格持续提高,导致以黄金为原料的键合金丝价格也不断提高,进而使LED封装成本大幅度提高,有必要研究与开发替代键合金丝的合金型键合丝。
发明内容
本发明所要解决的技术问题是弥补上述现有技术的缺陷,提供一种表面有复合镀层的合金型键合丝。
本发明的技术问题通过以下技术方案予以解决。
这种表面有复合镀层的合金型键合丝,包括银为主组分的银合金芯材,以及在所述银合金芯材表面的镀层。
这种表面有复合镀层的合金型银丝的特点是:
由银为主组分的银合金芯材添加改善延伸性能的微量金属,经过单晶熔炼拉伸成银合金棒材,再进行粗拉伸、中拉伸和表面清洗成银合金芯线并在所述银合金芯线表面复合电镀后再超细拉伸为表面有复合镀层的合金型键合丝。
本发明的技术问题通过以下进一步的技术方案予以解决。
所述主组分的银合金芯材是纯度至少为99.9980%的高纯银合金材料。
所述改善延伸性能的微量金属及其与主组分的银合金芯材的重量百万分比(parts per million,缩略词为ppm)分别如下:
铍:10~15ppm;
钙:2~5ppm;
铈:5~10ppm。所述单晶熔炼拉伸成的银合金棒材具有纯单晶体结构,添加改善延伸性能的微量金属,可以明显提高单晶银合金棒材的延伸性能。在后续的超细拉伸过程中不必进行中间退火就具有较好的塑性变形能力,在经过带惰性气体保护的动态在线退火后延伸率至少为12%,其中直径为Φ23μm以下的超细合金银丝的延伸率至少为10%,有利于焊接键合时充分变形,提高线弧刚性和高度,提高拉断力及可靠性。
单晶熔炼拉伸而成的单晶银合金棒材,再进行粗拉伸、中拉伸和表面清洗成银合金芯线。
所述在银合金芯线表面复合电镀,是依次为预镀金、镀钯和复镀金。
所述预镀金的镀金层厚度为0.01~0.100μm。
所述镀钯的镀钯层厚度为0.1~1.5μm。
所述复镀金的镀金层厚度为0.1~1.0μm。
本发明的技术问题通过以下再进一步的技术方案予以解决。
优选的是,所述主组分的银合金芯材是6N银(Six Nines Silver=99.9999%),即纯度为99.9999%的高纯银合金材料。
所述单晶熔炼后拉伸的单晶银合金棒材的直径为Φ4mm。
所述再进行粗拉伸、中拉伸和表面清洗成的银合金芯线的直径为Φ0.05~0.25mm,属于超细芯材。
所述超细拉伸为表面有复合镀层的合金型键合丝的直径为Φ16~38μm。
本发明与现有技术对比的有益效果是:
本发明的表面有复合镀层的合金型键合丝在后续的超细拉伸过程中不必进行中间退火就具有较好的最终塑性变形能力,在经过带惰性气体保护的动态在线退火后延伸率至少为12%,性能与键合金丝相近,封装键合时只要高纯氮气进行烧球保护即可。替代键合金丝封装后,器件可靠性稳定,与使用键合金丝相比,无明显差异。而且产品成本可以控制在15元/百米左右,性价比高。
具体实施方式
下面结合具体实施方式对本发明进行说明。
一种表面有复合镀层的合金型键合丝,包括银为主组分的银合金芯材,以及在银合金芯材表面的镀层。由银为主组分的银合金芯材添加改善延伸性能的微量金属,经过单晶熔炼拉伸成银合金棒材,再进行粗拉伸、中拉伸和表面清洗成银合金芯线并在所述银合金芯线表面复合电镀后再超细拉伸为表面有复合镀层的合金型键合丝。
主组分的银合金芯材是纯度为99.9980%的高纯银合金材料,其组分的重量百万分比分别如下:
银 99998.00×10-6
锡 0.03×10-6
铁 0.05×10-6
硅 0.08×10-6
硫 0.01×10-6
镁 0.10×10-6
砷 0.01×10-6
铝 0.03×10-6
其它 0.12×10-6。
改善延伸性能的微量金属及其与主组分的银合金芯材的重量百万分比分别如下:
钙 2.81×10-6
铍 8.44×10-6
铈 3.52×10-6。
选取纯度为99.99%的粗银为原料,进行电解提纯至纯度6N。
单晶熔炼拉伸而成的直径为Φ4mm的单晶银合金棒材,再进行粗拉伸、中拉伸和表面清洗成直径为Φ0.05~0.25mm的银合金芯线。
在银合金芯线表面复合电镀,是依次为预镀金、镀钯和复镀金。
预镀金的镀金层厚度为0.021μm。
镀钯的镀钯层厚度为0.35μm。
复镀金的镀金层厚度为0.32μm。
将表面有复合镀层的银合金芯线进行超细拉伸,获得最终直径为Φ20μm的表面有复合镀层的合金型键合丝。
镀层表面检查采用80~100倍的金相显微镜,结果如下:
表面的金镀层均匀光亮,致密完整,无裂痕、起皮、脱落。
将表面有复合镀层的合金型键合丝进行动态连续退火,退火温度为430±0.5℃,四温区控制,温区总长度1200mm,退火速度0.8~1m/sec。
退火后力学性能测试采用拉力测试仪,结果如下:
拉断力:7.33g(标准值为5g);
延伸率:12.86%(标准值为10~14%);
抗拉强度:240MPa(标准值为至少200MPa);
烧球后的球硬度Hv0.002:47.5;
线硬度Hv0.01:96.2;
电阻率:1.73μΩ×cm;
熔断电流:0.97A(弧长3mm);
成球特性:球形规则,圆度合适,表面光亮无残留物(5N氮气烧球保护下,球径40μm)。
焊线试验采用型号为ASM EAGLE60的焊线机,焊线产品代号为SOP16,结果如下:
第一焊点完全正常,无明显金属层挤出,无弹坑出现;
第二焊点鱼尾形状完全打开,貌似金线,拉力正常;
焊线拉力和球推力测试,结果如下:
焊线拉力:8~9g(标准值为至少5g)
球推力31~36g(标准值为至少20g)
推球试验后,芯片表面有足够的残留。
以上多项测试结果表明:本具体实施方式的表面有复合镀层的合金型键合丝能够满足LED发光二极管的现代封装的键合要求。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下做出若干等同替代或明显变型,而且性能或用途相同,都应当视为属于本发明由所提交的权利要求书确定的专利保护范围。
Claims (10)
1.一种表面有复合镀层的合金型键合丝,包括银为主组分的银合金芯材,以及在所述银合金芯材表面的镀层,其特征在于:
由银为主组分的银合金芯材添加改善延伸性能的微量金属,经过单晶熔炼拉伸成银合金棒材,再进行粗拉伸、中拉伸和表面清洗成银合金芯线并在所述银合金芯线表面复合电镀后再超细拉伸为表面有复合镀层的合金型键合丝。
2.如权利要求1所述的表面有复合镀层的合金型键合丝,其特征在于:
所述主组分的银合金芯材是纯度至少为99.9980%的高纯银合金材料。
3.如权利要求1或2所述的表面有复合镀层的合金型键合丝,其特征在于:
所述主组分的银合金芯材是6N银(Six Nines Silver=99.9999%),即纯度为99.9999%的高纯银合金材料。
4.如权利要求3所述的表面有复合镀层的合金型键合丝,其特征在于:
所述改善延伸性能的微量金属及其与主组分的银合金芯材的重量百万分比(parts per million,缩略词为ppm)分别如下:
铍:10~15ppm;
钙:2~5ppm;
铈:5~10ppm。
5.如权利要求4所述的表面有复合镀层的合金型键合丝,其特征在于:
所述在银合金芯线表面复合电镀,是依次为预镀金、镀钯和复镀金。
6.如权利要求5所述的表面有复合镀层的合金型键合丝,其特征在于:
所述预镀金的镀金层厚度为0.01~0.100μm;
所述复镀金的镀金层厚度为0.1~1.0μm。
7.如权利要求6所述的表面有复合镀层的合金型键合丝,其特征在于:
所述镀钯的镀钯层厚度为0.1~1.5μm。
8.如权利要求7所述的表面有复合镀层的合金型键合丝,其特征在于:
所述单晶熔炼后拉伸的单晶银合金棒材的直径为Φ4mm。
9.如权利要求8所述的表面有复合镀层的合金型键合丝,其特征在于:
所述再进行粗拉伸、中拉伸和表面清洗成的银合金芯线的直径为Φ0.05~0.25mm。
10.如权利要求9所述的表面有复合镀层的合金型键合丝,其特征在于:
所述超细拉伸为表面有复合镀层的合金型键合丝的直径为Φ16~38μm。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123597A (ja) * | 2005-10-28 | 2007-05-17 | Nippon Steel Materials Co Ltd | 半導体装置用ボンディングワイヤ |
US20090188696A1 (en) * | 2005-01-05 | 2009-07-30 | Tomohiro Uno | Bonding wire for semiconductor device |
WO2010087053A1 (ja) * | 2009-01-27 | 2010-08-05 | タツタ システム・エレクトロニクス株式会社 | ボンディングワイヤ |
JP2010245390A (ja) * | 2009-04-08 | 2010-10-28 | Tatsuta Electric Wire & Cable Co Ltd | ボンディングワイヤ |
-
2011
- 2011-01-07 CN CN201110003321A patent/CN102130068B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090188696A1 (en) * | 2005-01-05 | 2009-07-30 | Tomohiro Uno | Bonding wire for semiconductor device |
JP2007123597A (ja) * | 2005-10-28 | 2007-05-17 | Nippon Steel Materials Co Ltd | 半導体装置用ボンディングワイヤ |
WO2010087053A1 (ja) * | 2009-01-27 | 2010-08-05 | タツタ システム・エレクトロニクス株式会社 | ボンディングワイヤ |
JP2010245390A (ja) * | 2009-04-08 | 2010-10-28 | Tatsuta Electric Wire & Cable Co Ltd | ボンディングワイヤ |
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