CN111653541A - 一种镀铁镀铂的双镀层键合铜丝 - Google Patents

一种镀铁镀铂的双镀层键合铜丝 Download PDF

Info

Publication number
CN111653541A
CN111653541A CN202010492361.8A CN202010492361A CN111653541A CN 111653541 A CN111653541 A CN 111653541A CN 202010492361 A CN202010492361 A CN 202010492361A CN 111653541 A CN111653541 A CN 111653541A
Authority
CN
China
Prior art keywords
iron
plated
platinum
plating
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010492361.8A
Other languages
English (en)
Inventor
俞健
齐燕
余致远
刘丕均
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Junzhan Semiconductor Materials Co ltd
Nanjing Micron Electronic Industry Research Institute Co ltd
Original Assignee
Nanjing Junzhan Semiconductor Materials Co ltd
Nanjing Micron Electronic Industry Research Institute Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing Junzhan Semiconductor Materials Co ltd, Nanjing Micron Electronic Industry Research Institute Co ltd filed Critical Nanjing Junzhan Semiconductor Materials Co ltd
Priority to CN202010492361.8A priority Critical patent/CN111653541A/zh
Publication of CN111653541A publication Critical patent/CN111653541A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43826—Physical vapour deposition [PVD], e.g. evaporation, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/45199—Material of the matrix
    • H01L2224/452—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45272—Vanadium (V) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H01L2224/45572—Two-layer stack coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/4566—Iron (Fe) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45669—Platinum (Pt) as principal constituent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Wire Bonding (AREA)

Abstract

本发明公开了一种镀铁镀铂的双镀层键合铜丝，涉及键合丝技术领域。一种镀铁镀铂的双镀层键合铜丝，所述镀铁镀铂的双镀层键合铜丝包括铜芯材；镀覆在铜芯材表面的铁镀层；镀覆在铁镀层表面的铂镀层。所述铜芯材经过熔炼进行粗拉伸后在表面镀覆铁镀层；再中拉伸后在铁镀层表面镀覆铂镀层；再超细拉伸为镀铁镀铂的双镀层键合铜丝。采用逐层拉伸，逐层镀层，具有较好的最终塑性变形能力，铁铂双镀层在压力加工过程中变形一致，表面均匀，致密完整，尤其是有利于焊接键合时充分变形，提高拉断力及可靠性。而且，双镀层结合处具有铁磁性的铁铂合金层能够起到屏蔽作用，减小键合线中的噪音。同时镀铁铂合金层对单晶铜键合线形成了保护，避免被氧化。

Description

一种镀铁镀铂的双镀层键合铜丝
技术领域
本发明涉及键合丝技术领域，具体是一种镀铁镀铂的双镀层键合铜丝。
背景技术
随着集成电路和半导体器件封装技术向多引线化、高集成度和小型化发展，封装技术要求采用更细、电学性能更优良的键合丝进行键合。传统的金键合丝和铝键合丝在导电性能和导热性能上的已经趋于极限，并且金的价格愈发上涨限制了其的应用。金丝和铝丝已经在导电和导热性能上逐步趋近于极限。铜丝作为内引线，具有比金丝高的导电和导热性能，可以用于制造对电流负载要求更高的功率器件，而且可以使高密度封装时的散热更为容易。铜丝较强的抗拉强度可以使丝线直径变得更细，焊盘尺寸和焊盘间距也能相应减小。然而铜线表面的污染和氧化造成焊接性能降低，氧化膜降低了铜线的键合性能。
发明内容
本发明的目的在于提供一种镀铁镀铂的双镀层键合铜丝，以解决上述背景技术中提出的至少一个问题。
为实现上述目的，本发明提供如下技术方案：
一种镀铁镀铂的双镀层键合铜丝，所述镀铁镀铂的双镀层键合铜丝包括：
铜芯材；
镀覆在铜芯材表面的铁镀层；
以及镀覆在铁镀层表面的铂镀层。
其中，所述铜芯材经过熔炼进行粗拉伸后在表面镀覆铁镀层；
再中拉伸后在铁镀层表面镀覆铂镀层；
再超细拉伸为镀铁镀铂的双镀层键合铜丝。
优选的，所述铜芯材是纯度至少99.999％的高纯铜合金材料。
优选的，在真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的铁镀层和/或铂镀层。
优选的，所述真空镀膜设备的真空度为10-3～10Pa。
优选的，所述超细拉伸后铁镀层厚度为0.5μm。
优选的，所述超细拉伸后铂镀层厚度为0.5μm
优选的，所述铜芯材直径为2mm。
一种镀铁镀铂的双镀层键合铜丝的制备方法，包括：
铜合金经过真空熔炼和定向连续引铸工艺，经粗拔以制得直径大约为4-5mm的铜芯：
在氮气气氛下对铜芯进行退火；
退火后的铜芯表面上电镀金属铁，并精拔呈直径为2-3mm的镀铁铜丝；并对镀铁铜丝进行热退火，其中热退火温度为450-500℃，时间为45-55min；
镀铁铜丝表面上电镀金属铂，并精拔成直径为1-2mm的双镀层键合铜丝；双镀层键合铜丝进行热退火，退火温度为700±1℃，退火气氛为5％H2+95Ar。
优选的，在氮气气氛下对铜芯进行退火，其中退火炉有效长度为900-1100mm，退火温度为400-450℃，退火速率为1.3m/s。
与现有技术相比，本发明的有益效果是：
本发明铁铂双镀层键合铜丝采用逐层拉伸，逐层镀层，具有较好的最终塑性变形能力，铁铂双镀层在压力加工过程中变形一致，表面均匀，致密完整，尤其是有利于焊接键合时充分变形，提高拉断力及可靠性。而且，双镀层结合处具有铁磁性的铁铂合金层能够起到屏蔽作用，减小键合线中的噪音。同时镀铁铂合金层对单晶铜键合线形成了保护，避免被氧化。
具体实施方式
为了加深对本发明的理解，下面将结合实施例对本发明作进一步详述，以下实施例仅用于解释本发明，并不构成对本发明保护范围的限定。
本发明实施例提供，一种镀铁镀铂的双镀层键合铜丝，所述镀铁镀铂的双镀层键合铜丝包括铜芯材，镀覆在铜芯材表面的铁镀层，以及镀覆在铁镀层表面的铂镀层。
其中，所述铜芯材经过熔炼进行粗拉伸后在表面镀覆铁镀层；
再中拉伸后在铁镀层表面镀覆铂镀层；
再超细拉伸为镀铁镀铂的双镀层键合铜丝。
本发明铁铂双镀层键合铜丝采用逐层拉伸，逐层镀层，具有较好的最终塑性变形能力，铁铂双镀层在压力加工过程中变形一致，表面均匀，致密完整，尤其是有利于焊接键合时充分变形，提高拉断力及可靠性。而且，双镀层结合处具有铁磁性的铁铂合金层能够起到屏蔽作用，减小键合线中的噪音。同时镀铁铂合金层对单晶铜键合线形成了保护，避免被氧化。
一实施例，所述铜芯材是纯度至少99.999％的高纯铜合金材料。
一实施例，在真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的铁镀层和/或铂镀层。真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的铁镀层和/或铂镀层。镀覆铁镀层和铂镀层附着力远大于化学镀的镀层，在后续拉伸变形时变形一致，表面均匀，致密完整。
一实施例，所述真空镀膜设备的真空度为10-3～10Pa。
一实施例，所述超细拉伸后铁镀层厚度为0.5μm。
一实施例，所述超细拉伸后铂镀层厚度为0.5μm
一实施例，所述铜芯材直径为2mm。
一种镀铁镀铂的双镀层键合铜丝的制备方法，包括：
铜合金经过真空熔炼和定向连续引铸工艺，经粗拔以制得直径大约为4-5mm的铜芯：
在氮气气氛下对铜芯进行退火；
退火后的铜芯表面上电镀金属铁，并精拔呈直径为2-3mm的镀铁铜丝；并对镀铁铜丝进行热退火，其中热退火温度为450-500℃，时间为45-55min；
镀铁铜丝表面上电镀金属铂，并精拔成直径为1-2mm的双镀层键合铜丝；双镀层键合铜丝进行热退火，将表面镀铁铂合金的键合铜丝进行退火，退火温度为700±1℃，退火气氛5％H2+95Ar，使得铁铂合金发生有序化转变。
一实施例，在氮气气氛下对铜芯进行退火，其中退火炉有效长度为900-1100mm，退火温度为400-450℃，退火速率为1.3m/s。
本具体实施方式的双镀层键合铜丝能够满足现代封装的高端键合要求。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是本发明的原理，在不脱离本发明精神和范围的前提下本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明的范围内。本发明要求的保护范围由所附的权利要求书及其等同物界定。

Claims (9)

1.一种镀铁镀铂的双镀层键合铜丝，其特征在于，所述镀铁镀铂的双镀层键合铜丝包括：
铜芯材；
镀覆在铜芯材表面的铁镀层；
以及镀覆在铁镀层表面的铂镀层；
其中，所述铜芯材经过熔炼进行粗拉伸后在表面镀覆铁镀层；
再中拉伸后在铁镀层表面镀覆铂镀层；
再超细拉伸为镀铁镀铂的双镀层键合铜丝。
2.根据权利要求1所述镀铁镀铂的双镀层键合铜丝，其特征在于所述，所述铜芯材是纯度至少99.999％的高纯铜合金材料。
3.根据权利要求1所述镀铁镀铂的双镀层键合铜丝，其特征在于，在真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的铁镀层和/或铂镀层。
4.根据权利要求3所述镀铁镀铂的双镀层键合铜丝，其特征在于，所述真空镀膜设备的真空度为10-3～10Pa。
5.根据权利要求2所述镀铁镀铂的双镀层键合铜丝，其特征在于，所述超细拉伸后铁镀层厚度为0.5μm。
6.根据权利要求2所述镀铁镀铂的双镀层键合铜丝，其特征在于，所述超细拉伸后铂镀层厚度为0.5μm。
7.根据权利要求1所述镀铁镀铂的双镀层键合铜丝，其特征在于，所述铜芯材直径为2mm。
8.根据权利要求1-7任一所述的镀铁镀铂的双镀层键合铜丝的制备方法，其特征在于，所述制备方法包括：
铜合金经过真空熔炼和定向连续引铸工艺，经粗拔以制得直径大约为4-5mm的铜芯：
在氮气气氛下对铜芯进行退火；
退火后的铜芯表面上电镀金属铁，并精拔呈直径为2-3mm的镀铁铜丝；并对镀铁铜丝进行热退火，其中热退火温度为450-500℃，时间为45-55min；
镀铁铜丝表面上电镀金属铂，并精拔成直径为1-2mm的双镀层键合铜丝；双镀层键合铜丝进行热退火，退火温度为700±1℃，退火气氛为5％H2+95Ar。
9.根据权利要求8所述的镀铁镀铂的双镀层键合铜丝的制备方法，其特征在于，
在氮气气氛下对铜芯进行退火，其中退火炉有效长度为900-1100mm，退火温度为400-450℃，退火速率为1.3m/s。
CN202010492361.8A 2020-06-03 2020-06-03 一种镀铁镀铂的双镀层键合铜丝 Pending CN111653541A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010492361.8A CN111653541A (zh) 2020-06-03 2020-06-03 一种镀铁镀铂的双镀层键合铜丝

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010492361.8A CN111653541A (zh) 2020-06-03 2020-06-03 一种镀铁镀铂的双镀层键合铜丝

Publications (1)

Publication Number Publication Date
CN111653541A true CN111653541A (zh) 2020-09-11

Family

ID=72351100

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010492361.8A Pending CN111653541A (zh) 2020-06-03 2020-06-03 一种镀铁镀铂的双镀层键合铜丝

Country Status (1)

Country Link
CN (1) CN111653541A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112687649A (zh) * 2020-12-25 2021-04-20 中国科学院宁波材料技术与工程研究所 键合线表面的耐腐蚀抗氧化涂层及其制备方法与应用
CN114959534A (zh) * 2022-05-27 2022-08-30 成都芯辰新能源科技有限公司 一种用于在极细铜丝表面进行低熔点金属均匀包覆的结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906467A (en) * 1973-05-14 1975-09-16 Control Data Corp Plated wire memory
CN1643675A (zh) * 2002-03-26 2005-07-20 住友电工运泰克株式会社 键合线和使用该键合线的集成电路装置
CN102130068A (zh) * 2011-01-07 2011-07-20 四川威纳尔特种电子材料有限公司 一种表面有复合镀层的合金型键合丝
CN103219246A (zh) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 一种镀钯镀银的双镀层键合铜丝的制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906467A (en) * 1973-05-14 1975-09-16 Control Data Corp Plated wire memory
CN1643675A (zh) * 2002-03-26 2005-07-20 住友电工运泰克株式会社 键合线和使用该键合线的集成电路装置
CN102130068A (zh) * 2011-01-07 2011-07-20 四川威纳尔特种电子材料有限公司 一种表面有复合镀层的合金型键合丝
CN103219246A (zh) * 2013-03-01 2013-07-24 溧阳市虹翔机械制造有限公司 一种镀钯镀银的双镀层键合铜丝的制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112687649A (zh) * 2020-12-25 2021-04-20 中国科学院宁波材料技术与工程研究所 键合线表面的耐腐蚀抗氧化涂层及其制备方法与应用
CN112687649B (zh) * 2020-12-25 2024-03-12 中国科学院宁波材料技术与工程研究所 键合线表面的耐腐蚀抗氧化涂层及其制备方法与应用
CN114959534A (zh) * 2022-05-27 2022-08-30 成都芯辰新能源科技有限公司 一种用于在极细铜丝表面进行低熔点金属均匀包覆的结构
CN114959534B (zh) * 2022-05-27 2023-11-21 成都芯辰新能源科技有限公司 一种用于在极细铜丝表面进行低熔点金属均匀包覆的结构

Similar Documents

Publication Publication Date Title
US9812421B2 (en) Bonding wire for semiconductor devices
KR102280653B1 (ko) 전자 부품 탑재 기판 및 그 제조 방법
CN111653541A (zh) 一种镀铁镀铂的双镀层键合铜丝
WO2019041587A1 (zh) 一种电子封装用高可靠性铜合金键合丝及其制备方法
JP2002317295A (ja) リフロー処理Ｓｎ合金めっき材料、それを用いた嵌合型接続端子
CN109767991B (zh) 一种高金合金键合丝的制备方法
JP2007042355A (ja) 複合被覆銅線及び複合被覆エナメル銅線
CN106992164A (zh) 一种微电子封装用铜合金单晶键合丝及其制备方法
CN110607468A (zh) 一种铜锡合金键合线生产工艺方法
JPS59155161A (ja) 半導体素子のボンデイング用ワイヤ
CN101145586A (zh) 太阳能电池用连接引线和它的制造方法及太阳能电池
CN109509571B (zh) 一种锡基合金与铜带复合材料及其制备方法
JP2004111072A (ja) 平角強磁性導体およびその製造方法、及び該導体を用いたエナメル被覆平角強磁性線、自己融着性エナメル被覆平角強磁性線および強磁性フラットケーブル
CN114308595A (zh) 一种键合无氧铜丝的表面纳米钯层浸镀工艺
JPH01289021A (ja) 銅被覆鋼撚線の製造方法
CN111653540A (zh) 一种表面镀铁铂合金键合铜丝
JP2001073186A (ja) 絶縁膜でラミネートした配線用部品の製造方法
TWI594336B (zh) Insulation bonding wire
JP5606192B2 (ja) Ａｌめっき鋼線を用いたワイヤボンディング構造
JPH0466695A (ja) 耐熱銀被覆銅線とその製造方法
CN111558992A (zh) 陶瓷劈刀及其制作方法和半导体封装方法
CN110699570A (zh) 一种高成球性的键合银丝材料及其制备方法
JPH04171609A (ja) はんだ付け可能な軽量耐熱マグネットワイヤ
TWI729910B (zh) 磁芯、磁芯電極的製作方法及電感元件
TWI429769B (zh) 無鍍層鈀網合金線及其製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20200911