CN1643675A - 键合线和使用该键合线的集成电路装置 - Google Patents

键合线和使用该键合线的集成电路装置 Download PDF

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Publication number
CN1643675A
CN1643675A CNA038062917A CN03806291A CN1643675A CN 1643675 A CN1643675 A CN 1643675A CN A038062917 A CNA038062917 A CN A038062917A CN 03806291 A CN03806291 A CN 03806291A CN 1643675 A CN1643675 A CN 1643675A
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Prior art keywords
bonding line
forms
metal layer
coating
copper
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CN100359657C (zh
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野中毅
改森信吾
井冈正则
深萱正人
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Sumitomo Electric Wintec Inc
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Sumitomo Electric Wintec Inc
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Abstract

一种键合线,其特征在于包括:包含铜作为主要材料的芯材;在所述芯材上形成的包含除铜之外金属的异种金属层;和一覆层,其包含具有熔点高于铜的熔点的抗氧化金属并且在所述异种金属层上形成,以及一使用所述键合线的集成电路装置。所述键合线可以形成在球直径的宽范围上具有真正圆形的球,并且可以使用镀敷技术制造而不会使镀液劣化,且所述覆层到所述芯材的粘合性良好。

Description

键合线和 使用该键合线的集成电路装置
技术领域
本发明涉及一种键合线,其用于将集成电路芯片(IC,LSI,晶体管等)上的电极连接至电路布线衬底(引线框架,陶瓷衬底,印刷电路板等)上的导线,并且也涉及使用该键合线的集成电路装置。
背景技术
使用球焊方法,楔形焊接方法,钎焊方法(solder bonding method),电阻熔焊方法等作为连接集成电路芯片至电路布线衬底的方法。其中,通常使用的是采用细金线的球焊方法。
通常球焊方法根据下面的步骤实现。由一个可移动毛细管(下文称为“键合工具”)引导的键合线的尖端被线和电极火焰(electrode torch)之间的放电所熔化,因而形成一个球。当加上超声波时,该球对着集成电路芯片上的电极被压下,作为第一个焊点,因而实现键合。此后,当送入线时,键合工具移动到电路布线衬底上的电极作为第二个焊点,键合又被实现。(在这个步骤中没有形成球)。键合后,键合工具被抬起,一个夹具拉出线并截断它。
目前,金被用作这种类型键合线的材料。但是,因为金是贵重的,希望能开发由其他非贵重金属制成的键合线。
在集成电路芯片和电路导线连接后,执行包封以保护电路。树脂包封是被广泛采用的一种包封方法。在树脂包封的情况下,熔化的树脂流向电路导线以保护电路,然后树脂固化。在包封时,线的部分可能被树脂的流动所漂移,且相邻线可能相互接触,因而引起短路。尤其是,由于促进键合线的布线中相邻线之间的距离的减小以获得高密度集成和集成电路装置的尺寸减小,使得这个问题增多了。因此,需要一种具有高硬度使其不会被树脂的流动所漂移的键合线。
作为由贱金属制成的并具有高硬度的键合线,一种以铜为原材料制成的键合线被研制出来,比如日本专利公报No.8-28382,公开了这样的键合线。然而,铜键合线具有以下问题:因为铜键合线的表面易于氧化,很难长时间存储该线;由于键合时来自衬底的热传导促进了氧化,导致缺陷键合;等等。
为了防止铜键合线的表面氧化,一种由铜制成且被覆了贵金属或者抗蚀金属(比如金、银、铂、钯、镍、钴、铬、钛等)的键合线已经在日本特开专利公报No.62-97360中被提出。这些线比金键合线便宜,且被认为它们能够获得优异的键合特性而不会引起表面氧化。
然而,为了进一步提高集成电路装置的高密度集成并减小尺寸,即,为了进一步减小相邻线之间的距离,本发明的发明者们在下文描述中评估了一种被覆有金或者钯的铜键合线,并发现引起了新的问题。
1)形成小直径的球对于缩短相邻线之间的距离是非常必要的。然而,如果试图通过使用镀金的铜键合线来形成小直径的球(意味着直径大约是线直径的3倍或者更小的球。),该球不具有真正的球形,却是一个矛状,且该形状的重现性不稳定,因而会引起低键合可靠性的问题。
2)与被覆金的铜键合线不相同,被覆钯的铜键合线能够形成小直径的球,而不会形成具有矛状的球。然而,当球的直径大或者甚至当球的直径被分类为是小直径但实际上具有相对大直径的情况下,球的中心可能偏离线的轴,导致形成具有高尔夫球棒形状的球的缺陷。随着球的直径变大,该缺陷的缺陷程度升高。
3)在钯覆层通过镀敷形成在主要含铜的芯材上以制造被覆钯的铜键合线的情况下,在镀敷工艺中铜易于溶解在钯镀液中,从而镀液易于劣化(镀敷能力下降)。其结果是,镀敷质量下降,因此更换镀液的频率增加并增加了制造成本。
4)在被覆钯的铜键合线中,钯覆层和芯的粘合性差,由此钯覆层易于剥离。如果钯覆层剥离,剥离部分的芯材易于被氧化,因此键合能力下降。另外,钯覆层的碎片堵塞在键合工具内,因此该工具的键合性能下降。而且,钯覆层落下的碎片引起集成电路装置的故障。在通过拉线工艺来制造线的情况下,易于发生断线,因此生产率降低。虽然当覆层通过镀敷形成时的粘合性比覆层通过另一种方法(如化学或者物理气相沉积方法)形成时的粘合性要好,但是希望粘合性得到更大的改进。
如上所述,很多问题都可能发生。在解决常规技术中遇到的这些问题中,本发明欲提供一种键合线,其能够稳定形成一种在宽的球直径范围内具有真正球形的球,并且制造时不会在镀敷期间造成镀液质量的下降,并且,优选的,其中覆层和其芯之间的粘合性优异。
本发明也欲提供一种使用该键合线的集成电路装置。
发明内容
在一种将熔点高于铜的熔点的抗氧化金属被覆在主要含铜的芯材上而形成的键合线中,本发明的特征在于通过在芯材和由抗氧化金属形成的层(覆层)之间提供一种由除铜外的金属形成的层,而解决了上述常规技术中的问题。
换句话说,本发明是一种键合线,其包括:主要含铜的芯;在芯上形成的由除铜以外的金属(下文中称作“异种金属”)形成的异种金属层;形成在该异种金属层上形成的、由熔点高于铜的熔点的抗氧化金属形成的覆层,以及一种使用该键合线的集成电路装置。
广泛研究了具有主要含铜的芯的键合线的覆层材料对于球形成期间球形状稳定性的影响,其结果是,本发明的发明人发现,当使用其熔点高于芯所用铜的熔点的金属作为覆层材料时,在镀金铜线情况下发生的、在小直径球的形成过程中形成矛形球的缺陷不会发生了,因此,很容易得到具有真正球体形状的球。当覆层金属熔点高于铜的熔点的情况下,防止了覆层金属分散并熔化到铜线中,因此推测该球可以保持真正球体的形状。
另外,本发明的发明人发现,当在键合线的制造过程中通过镀敷形成覆层时,通过在芯和覆层之间提供一个异种金属层(比如金层),防止了铜溶解在镀液中,因此镀液很难劣化。
而且,发明者也发现通过提供该异种金属层,覆层和芯之间的粘合性可被提高,并且球可以在一个较宽的球直径范围内保持真正的球状。
在当金或其他被用作覆层材料的情况下,很难如上所述获得真正球形的球。然而,在本发明中,该球可以在一个较宽的球直径范围内保持一个真正的球形,即使在熔点低于铜的熔点的金属(比如金)被用作形成在芯上的异种金属层材料的时候。
已经在这些发现的基础上获得了本发明。
具体实施方式
本发明的键合线的特征在于在芯和其覆层之间提供一个异种金属层。如上所述,异种金属是一种非铜的金属。如上所述,熔点比铜低的金属也可以被用作该异种金属。
异种金属的例子包括:金、铂、钯、铼、铑、钌、钛、镁、铁、铝、锆、铬、镍、银、锡、锌、锇、铱和这些金属的合金。
在这些异种金属中,金、铂、钯、铬、镍、银、锡、锌和这些金属的合金是适用的,因为使用这些金属通过镀敷能够易于形成该异种金属层。
特别的,很少或几乎不熔化在形成覆层中使用的镀液中的金属是优选的。从这点来看,具有较低电离倾向和趋向引起钝化的金属是优选的。这类金属的例子包括金、铂、钯、铑、钌、钛、铁、铝、锆、铬、镍和这些金属的合金。
本发明中,尽管异种金属层还被覆了覆层,当球形成时,由于在球表面的扩散,该异种金属层的金属暴露在氧气中。因此,具有优异抗氧化性的金属优选用作该异种金属。从这点来看,金、铂或钯特别适于作为该异种金属。
在金、铂或钯被用于被覆钯的铜键合线中的异种金属层的情况下,可能得到一种钯覆层的粘合性优异的键合线。在这些金属中,因为金的低成本,其是优选的。
除了仅仅由一种异种金属形成的异种金属层以外,也使用如下层作为异种金属层的例子,其包含异种金属作为主要成分,以及还包含不损害本发明效果的范围的铜。
形成异种金属层的金属通常和形成覆层的金属不同。然而,异种金属层可能部分包含不损害本发明效果的范围内的覆层中所含金属。另外,比如,当异种金属层由触击电镀(strike plating)形成并且当覆层由普通镀敷形成的情况下,用于形成异种金属层的金属可能和用于形成覆层的金属相同。这种情况的例子是,其中异种金属层由钯触击电镀形成以及覆层由钯镀敷形成的情况,和其中异种金属层由铂触击电镀形成以及覆层由铂镀敷形成的情况。
而且,异种金属层可能是一个这样的层,其中包含一种在芯材或者覆层中少量包含的金属作为该层的主要成分。
本发明的键合线的特征在于使用一种熔点高于铜的熔点以及抗氧化性高于铜的抗氧化性的金属构成覆层。此熔点优选高出铜的熔点200℃,更优选地高出铜的熔点300℃。特别是,至少一种从钯、铂和镍中选出的金属是优选的。铜的熔点是1084℃,钯的熔点是1554℃,铂的熔点是1772℃,镍的熔点是1455℃。特别的,钯是优选的,因为它相对便宜,适于镀敷,抗氧化性超过镍,可加工性(易于拉线)也超过铂。
当然,包含两种以上从钯、铂、镍中选出的金属的合金也可用作覆层材料。而且,包含铜和从钯、铂和镍中选出的一种以上金属的合金也可用作覆层材料,只要该合金具有高于铜的熔点并且抗氧化性比铜好。尽管覆层的材料主要包含上述提到的元素,包含其他元素的合金也能够用作材料,只要该合金的熔点高于铜的熔点。
因为本发明的键合线具有形成在芯材上的异种金属层和覆层,优选使用每单位截面积延展率为0.021%/μm2以上的线,因为其在形成球时因为该球的中心易于偏离线轴而易于引起形成具有被称作“高尔夫球棒”形状的球的不合格率低。更优选的,该每单位截面积延展率为0.024%/μm2以上,最优选的是0.030%/μm2以上。
按照本发明的每单位截面积延展率是一个通过下列方式获得的数值,用当10cm长的线以20mm/min的拉伸速度被拉伸并断裂时的线伸长率(%)除以拉伸前的线的截面积(芯、异种金属层和覆层的总面积(μm2))。
通常,键合线被拉伸以得到最终线直径,然后被退火(最终退火)以调整延展率。除最终退火,通过在覆层形成后在拉线步骤的中间执行退火,能够得到具有只通过最终退火难以获得的高延展性的键合线。通过采用这种中间退火,能获得具有0.030%/μm2以上的高的每单位截面积延展率的键合线。
具有高延展性的线有一些优点,除了减少形成具有被称为高尔夫球棒形状的球的优点以外,还有,比如提高线环形状的可控性,增加第二键合的接合强度。通过提高线环形状的可控性,可以减少相邻线之间的缺陷接触,在结成环时接合部的破损等等。
本发明键合线的芯主要包含铜。该芯包括只包含铜的那种。然而,芯材优选为包含除铜以外的其他元素,其含量总计为0.001以上重量百分比以及1%以下重量百分比,以获得高延展率的特性。更优选的,杂质的含量为0.01%以上重量百分比。
作为包含在芯内的杂质,以铍、锡、锌、锆、银、铬、铁、氧、硫和氢为例。将杂质的含量设定为如上所述的特定值或更多,可能获得一个在杂质含量少的时候很难获得的高延展率特性。而且,即使在高延展率特性没有特别要求的情况下,与杂质含量少的情况相比较,加工时的线断裂等等可以显著地减少。然而,如果除铜以外元素的含量过多,电气特性变差,比如,电阻增加,在形成球时球表面具有类坑状。从这点来看,除铜以外元素的总量优选的是重量的1%以下。
在不损害本发明的效果的范围内,根据本发明的键合线可能具有除了芯上的异种金属层和覆层以外的层。该除了异种金属层和覆层以外的层可以形成在覆层的外侧,或者形成在芯和异种金属层之间或者在异种金属层和覆层之间。另外,异种金属层和覆层的每一个可以具有多层。
本发明的键合线的直径不特别做限制。当需要小直径球的情况下,线直径优选为15-40μm。
异种金属层的厚度不特别做限制。通常,该厚度优选为0.001-0.1μm,更优选的为0.001-0.03μm。大约为覆层厚度的0.001-0.1倍的厚度通常是足够的。
覆层的厚度也不特别做限制。大约为芯直径的1-0.0001倍的厚度是优选的,即使该厚度依赖于线直径而不同。该厚度更优选的是芯直径的大约0.3-0.01倍。当在线被垂直切断之际假定Y=(覆层截面面积除以芯的截面面积),覆层厚度优选为满足0.007≤Y≤0.05关系的数值,更优选的为满足0.01≤Y≤0.04关系的数值。当形成具有大直径的球的情况下,该球易于具有高尔夫球棒的形状。然而,通过引入上述限制,能够形成具有真正球形的球,因此可减少导致具有高尔夫球棒形状的不合格率。面积比Y可以通过改变层的厚度容易地调整。
作为在芯上形成异种金属层和覆层的方法,通过电镀形成异种金属层和通过电镀在其上形成覆层的方法是优选的。
在异种金属层通过电镀形成的情况下,欲强调粘合性的镀敷方法,通常称为触击电镀、薄镀(flash plating)和衬底镀敷(所有这些在本说明中被称为触击电镀)是优选的。这些镀敷方法的镀液通常具有低的金属浓度和具有能够在高电位下稳定镀敷的导电盐成分。特别的,金的触击电镀,镍的触击电镀,钯的触击电镀,铂的触击电镀和这些合金的触击电镀是优选的。
使用下述方法在经济上优选的,其中首先在厚的铜线上通过镀敷或者触击电镀覆盖一种异种金属,并且通过厚镀敷(thick plating)覆盖一种金属(即该覆层材料),然后由此获得的线被拉伸几次以使其具有期望的线直径和期望的层厚度。特别的,结合使用电镀和拉线在制造厚度均一和光滑表面中是表现良好的。其结果是,在线和通过键合工具中孔内面的线之间的摩擦减少,因而保证了良好的线馈送性能。而且,因为芯、异种金属层和覆层之间的粘合性很高,可能解决剥离的覆层以及异种金属层的碎片堵塞在键合工具内部的问题。
在日本特开专利公报No.62-97360所公开的实施例的情况下,通过化学和物理汽相沉积的形成方法在很多情况下制造成本高。然而,当一个薄膜(比如异种金属层)形成时,在某些情况下其制造成本变得低于一个可容忍的水平。因此,通过化学和物理汽相沉积法来形成异种金属层能够考虑被采纳。
在制造不具有异种金属层的键合线的工艺中,如上所述在通过电镀形成覆层时,芯材的铜溶解在镀液中,从而镀液劣化。然而,当线具有异种金属层的情况下,镀敷不会在铜上进行,而是在异种金属层上进行。因此,不会发生由于铜的溶解而引起镀液劣化。镀敷因此可以优选的被进行。
下文中,本发明的实施例将通过例子描述。这些例子不会限制本发明的范围。
例子
对具有99.995%纯度和200μm直径的铜线进行电镀,以形成一个具有大约0.01μm厚度的金触击镀敷和一个具有大约0.8μm厚度的钯镀敷。通过拉伸该线,制造出一个由具有25μm直径的铜芯和具有0.1μm厚度的钯层(覆层)以及一个具有0.001μm厚度的金层(异种金属层)组成的铜键合线。通过使用该线,具有不同直径的球通过一键合仪(KAIJO公司所生产的FB137型)形成,并同时检查了形状的缺陷率和主要的缺陷形状。每个球的直径被限定为根据球形成条件形成的真正球体的直径。作为球的形成条件,线尖端和火花棒之间的距离被设定为400μm,且以1升/分钟的流速向线尖端喷射氮气,以减少在该尖端周围的氧气浓度。表1中显示了结果。
对比例1
使用和上例具有相同结构的键合线,除了没有形成金层(异种金属层)以外,球在上述的相同条件下形成。就在该例子的情况下,检查了形状的缺陷率和主要缺陷形状。结果在表1显示。
对比例2
对具有99.995%纯度和200μm直径的铜线进行电镀,以形成具有大约0.8μm厚度的金镀敷。通过拉伸该线,制造出一个由具有25μm直径的铜芯和具有0.1μm厚度的金层所组成的铜键合线。就在该例子的情况下,检查了形状的缺陷率和主要缺陷形状。结果在表1显示。
如表1所示,具有金触击电镀层(异种金属层)例子的键合线展现出优于对比例中的键合线的优异球形成特性。
                               表1
    例子     对比例1     对比例2
覆层     钯     钯     金
异种金属层     金     无     无
球直径 40μm     0/50     0/50     49/50(*2)
50μm     0/50     0/50     48/50(*2)
60μm     0/50     0/50     45/50(*2)
70μm     1/50(*1)     5/50(*1)     30/50(*2)
80μm     7/50(*1)     15/50(*1)     0/50
表1中,分母表示测试例的数目,分子表示缺陷数目。(*1)表示高尔夫球棒的形状缺陷,(*2)表示矛形的形状缺陷。
工业应用性
本发明的键合线具有良好的球成形能力,因而能够在一个宽的球直径范围内形成具有真正球体形状的球。换句话说,该键合线的键合可靠性良好。另外,在覆层通过镀敷形成的情况下,镀敷工艺中使用的镀液不会变质,因而是有利的。因此,该键合线的制造成本低。而且,因为覆层的粘合性高,由此来看该键合线在键合可靠性上也是良好的。
而且,因为使用具有硬度的铜作为芯材,被键合的焊线很难在树脂包封中被树脂的流动所漂移,因而相邻线相互接触的可能性低。
作为一种具有良好特性的非贵重键合线,本发明的键合线被用来,比如,连接集成电路芯片上的电极和电路布线衬底上的导线。
使用该键合线的集成电路装置是便宜的,并且具有良好的可靠性,并能够用于多种用途。

Claims (14)

1.一种键合线,包括:主要含铜的芯;在所述芯上形成的、由除铜外的金属形成的异种金属层;和一覆层,其由具有熔点高于铜的熔点的抗氧化金属形成并且形成在所述异种金属层上。
2.如权利要求1所述的键合线,其中形成所述异种金属层的所述金属是从金、铂、钯、铼、铑、钌、钛、镁、铁、铝、锆、铬、镍、银、锡、锌、锇、铱和这些金属的合金中选出的一种金属。
3.如权利要求1或权利要求2所述的键合线,其中形成所述异种金属层的所述金属是一种很少或几乎不溶解在形成所述覆层时所用的镀液中的金属。
4.如权利要求2所述的键合线,其中形成异种金属层的所述金属是从金、铂、钯、铬、镍、银、锡、锌以及这些金属的合金中选出的一种金属。
5.如权利要求4所述的键合线,其中形成异种金属层的所述金属是金、铂或钯。
6.如权利要求5所述的键合线,其中形成异种金属层的所述金属是金。
7.如权利要求1-6中的任何一个所述的键合线,其中所述异种金属层通过电镀形成。
8.如权利要求7所述的键合线,其中该异种金属层通过触击电镀形成。
9.如权利要求1-8中的任何一个所述的键合线,其中形成所述覆层的所述金属是熔点高于铜的熔点200℃的金属。
10.如权利要求9所述的键合线,其中形成所述覆层的所述金属是从铂、钯、镍和这些金属的合金中选出的一种金属。
11.如权利要求1-10中的任何一个所述的键合线,其中所述线的每单位截面积的延展率是0.021%/μm2以上。
12.如权利要求1-11中的任何一个所述的键合线,其中当所述线被垂直切断时假定Y=(所述覆层的截面面积除以所述芯的截面面积),所述覆层的厚度是满足0.007≤Y≤0.05关系的数值。
13.如权利要求1-12中的任何一个所述的键合线,其中所述覆层由电镀形成。
14.一种使用按照权利要求1-13中任何一个的键合线的集成电路装置。
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