JPS6356924A - ワイヤボンデイング用金属細線 - Google Patents

ワイヤボンデイング用金属細線

Info

Publication number
JPS6356924A
JPS6356924A JP61202043A JP20204386A JPS6356924A JP S6356924 A JPS6356924 A JP S6356924A JP 61202043 A JP61202043 A JP 61202043A JP 20204386 A JP20204386 A JP 20204386A JP S6356924 A JPS6356924 A JP S6356924A
Authority
JP
Japan
Prior art keywords
plating layer
wire
copper wire
gold
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61202043A
Other languages
English (en)
Inventor
Koji Miyamoto
孝司 宮本
Koichi Nakagawa
中川　興一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61202043A priority Critical patent/JPS6356924A/ja
Publication of JPS6356924A publication Critical patent/JPS6356924A/ja
Pending legal-status Critical Current

Links

Classifications

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体組立工程において使用されるワイヤボン
ディング用金属細線に関するものである。
〔従来の技術〕
一般にワイヤボンディング用金属細線としては、金を用
いた金線が広く使用されている。これは、金は化学的に
安定で、しかも伸線加工性に優れているからである。と
ころで、金は上述した利点がある反面、価格が高く、半
導体装置の製造コストが嵩む原因となっている。
そのため、近年、金に変わる材料として、価格が安く、
電気的特性も良い銅を用いた銅線からなる金属細線によ
るボンディング技術が研究されるようになってきた。
〔発明が解決しようとする問題点〕
しかしながら、銅線は全体が高純度の銅であるため、表
面が空気に触れると酸化を起こし、劣化しやすい。その
結果、銅線を半導体電橋バフドにボンディングする際に
先端部に形成するボールの形状が不均一になり、延いて
はボンディングの信頼性が低下するなど、銅線をワイヤ
ボンディング用金属細線とするには問題があった。
本発明はこのような事情に鑑みなされたもので、その目
的は、銅を主成分としても、信頼性の高いボンディング
が行えるワイヤボンディング用金属細線を提供するもの
である。
〔問題点を解決するための手段〕
本発明に係るワイヤボンディング用金属細キ♀は、銅線
の表面に下地処理めっき層を設けると共に、その外側に
金めつき層を設けたものである。
〔作用〕
本発明においては、銅線は化学的に安定な金めつき層で
被覆され、空気に触れることがないので、酸化するのが
防止される。
〔実施例〕
以下、本発明の一実施例を図により詳細に説明する。第
１図は本発明に係るワイヤボンディング用金属細線を示
す縦断面図、第２図は同じく横断面図で、これらの図に
おいて符号１で示すものはワイヤボンディング用金属細
線を示す。この金属細線１は、銅線２と、この銅線２の
表面に設けられた下地処理めっき層としてのニッケルめ
っき層３と、このニッケルめっき層３の外側に設けられ
た金めつき層４とから構成されており、その外径は従来
の金線と等しくなるように設定されている。
前記銅線２は高純度の銅からなる長い線材を伸線機で引
抜く線引き加工法によって製造されており、その外径は
従来の金線よりも僅かに小さく設定されている。前記ニ
ッケルめっき層３は周知のニッケルめっき法により銅線
２の表面全体上に０．１〜１μの厚さに設けられている
。前記金めっき層４は周知の金めつき法により、１００
〜５００人の厚さに設けられている。すなわち、金属細
線ｌは銅線２の表面に先ず下地処理としてのニッケルめ
っき処理を施し、次いで金めつき処理を施すことによっ
て形成されている。そして、前記ニッケルめっき層３に
よって金めつき層４が銅線２中へ拡散するのが防止され
ている。
したがって、銅線２は化学的に安定な金めっきＮ４で被
覆され、空気に触れることがないので、酸化するのが防
止される。
次にこのように構成された金属細線１を使用したボンデ
ィング工程について説明する。第３図〜第５図はボンデ
ィング工程について説明するための図である。金属細線
１は、従来の金線と同様にキャピラリ１１に挿通されて
使用され、先ず第３図に示すように、キャピラリ１１を
トーチ１２方向へ移動させ、金属細線１の先端とトーチ
１２の間で放電を起こし、この放電による熱で、金属細
線１の先端にボール１３を形成する。その後、第４図に
示すように、キャピラリ１１を移動させ、金属細線１を
熱が加えられている半導体電極バッド１４の上方へ位置
決めする。そして、キャピラリ１１に超音波を印可しな
がらボール１３を半導体電極バッド１４上へ押圧し圧着
する。次いで、第５図に示すように、キャピラリ１１を
移動させながらループ１５を形成した後に、金属細線１
の先端を外部リード１６上に圧着してワイヤボンディン
グの１工程が終了する。
ここで、金属細線１の銅線２うよ上述したように、化学
的に安定な金めつき層４で被覆され、酸化するのが防止
されているので、ボール１３を形成する工程において、
均一な形状のボール１３を形成することができる。これ
は、金属細線１は酸化部がないために、先端が一様に溶
融するからである。
そのため、金属細線１を半浬体電極パフド１４に確実に
接続することができるので、銅を主成分とする金属細線
１を使用しても接続の信顛性を高めることかできる。
なお、上記実施例においては、ニッケルめっき層３の厚
さをＯ１１〜１μに金めつき層４の厚さを１００〜５０
０人にした例について説明したが、本発明はこれに限定
されるものではなく、各めっき層の厚さは適宜変更する
ことができる。また、金めつき処理を施すにあたり、ニ
ッケルめっき処理を下地処理として行った例について説
明したが、下地処理はニッケルめっき処理に限定される
ものではない。
〔発明の効果〕
以上説明したように本発明によれば、銅線の表面に下地
処理めっき層を設けると共に、その外側に金めつき層を
設けたから、銅線を化学的に安定な金めつき層で被覆し
、空気に触れるのを防止することができる。
したがって、銅線が酸化するのが防止でき、ボンディン
グ時に金属細線の先端に形成するボールの形状を均一に
することができるから、銅を主成分としても、信頬性の
高いボンディングを行うことができる。その結果、金線
を使用する従来に比較して製造コストが低減できる効果
がある。また、金線と同様に保管すればよいから保管が
困難になることがなく、しかも従来の金線用のボンディ
ング装置を何等変更することなくそのまま使用できる利
点もある。
【図面の簡単な説明】
第１図は本発明に係るボンディングワイヤ用金属細線を
示す縦断面図、第２図は同じく横断面図、第３図〜第５
図はボンディング工程について説明するための図である
。 １・・・・金属細線、２・・・・銅線、３・・・・ニッ
ケルめっき層、４・・・・金めつき層。

Claims (2)

    【特許請求の範囲】
  1. （１）銅線の表面に下地処理めっき層を設けると共に、
    この下地処理めっき層の外側に金めっき層を設けたこと
    を特徴とするワイヤボンディング用金属細線。
  2. （２）下地処理めっき層をニッケルめっき層としたこと
    を特徴とする特許請求の範囲第１項記載のワイヤボンデ
    ィング用金属細線。
JP61202043A 1986-08-27 1986-08-27 ワイヤボンデイング用金属細線 Pending JPS6356924A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61202043A JPS6356924A (ja) 1986-08-27 1986-08-27 ワイヤボンデイング用金属細線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61202043A JPS6356924A (ja) 1986-08-27 1986-08-27 ワイヤボンデイング用金属細線

Publications (1)

Publication Number Publication Date
JPS6356924A true JPS6356924A (ja) 1988-03-11

Family

ID=16450979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61202043A Pending JPS6356924A (ja) 1986-08-27 1986-08-27 ワイヤボンデイング用金属細線

Country Status (1)

Country Link
JP (1) JPS6356924A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003081661A1 (fr) * 2002-03-26 2003-10-02 Sumitomo Electric Wintec, Incorporated Fil de liaison et dispositif de circuit integre faisant appel a ce fil de liaison
US6701612B2 (en) 1993-11-16 2004-03-09 Formfactor, Inc. Method and apparatus for shaping spring elements
KR100424169B1 (ko) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 골드와이어의 강도를 향상시키는 방법
US6836962B2 (en) 1993-11-16 2005-01-04 Formfactor, Inc. Method and apparatus for shaping spring elements
WO2006134724A1 (ja) 2005-06-15 2006-12-21 Nippon Mining & Metals Co., Ltd. 超高純度銅及びその製造方法並びに超高純度銅からなるボンディングワイヤ
JP2007324603A (ja) 2006-06-02 2007-12-13 Robert Bosch Gmbh リボンとして形成されたボンディングワイヤ
US7645522B2 (en) * 2005-03-08 2010-01-12 W.C. Heraeus Gmbh Copper bonding or superfine wire with improved bonding and corrosion properties

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6701612B2 (en) 1993-11-16 2004-03-09 Formfactor, Inc. Method and apparatus for shaping spring elements
US6836962B2 (en) 1993-11-16 2005-01-04 Formfactor, Inc. Method and apparatus for shaping spring elements
KR100424169B1 (ko) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 골드와이어의 강도를 향상시키는 방법
WO2003081661A1 (fr) * 2002-03-26 2003-10-02 Sumitomo Electric Wintec, Incorporated Fil de liaison et dispositif de circuit integre faisant appel a ce fil de liaison
CN100359657C (zh) * 2002-03-26 2008-01-02 株式会社野毛电气工业 键合线和使用该键合线的集成电路装置
US7645522B2 (en) * 2005-03-08 2010-01-12 W.C. Heraeus Gmbh Copper bonding or superfine wire with improved bonding and corrosion properties
WO2006134724A1 (ja) 2005-06-15 2006-12-21 Nippon Mining & Metals Co., Ltd. 超高純度銅及びその製造方法並びに超高純度銅からなるボンディングワイヤ
EP2845915A1 (en) 2005-06-15 2015-03-11 JX Nippon Mining & Metals Corporation Ultrahigh-purity copper bonding wire
JP2007324603A (ja) 2006-06-02 2007-12-13 Robert Bosch Gmbh リボンとして形成されたボンディングワイヤ

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