JP2007324603A - リボンとして形成されたボンディングワイヤ - Google Patents
リボンとして形成されたボンディングワイヤ Download PDFInfo
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- JP2007324603A JP2007324603A JP2007148406A JP2007148406A JP2007324603A JP 2007324603 A JP2007324603 A JP 2007324603A JP 2007148406 A JP2007148406 A JP 2007148406A JP 2007148406 A JP2007148406 A JP 2007148406A JP 2007324603 A JP2007324603 A JP 2007324603A
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- bonding wire
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- wire according
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/02—Soldered or welded connections
- H01R4/023—Soldered or welded connections between cables or wires and terminals
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/2076—Diameter ranges equal to or larger than 100 microns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
- H01R43/02—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for soldered or welded connections
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
【解決手段】ボンディングワイヤ4が、互いに異なる電流容量を有する少なくとも2つの層5,6,7を有している。
【選択図】図1
Description
2,3 コンタクト面
4 ボンディングワイヤ
5 外側の層
6 内側の層
7 外側の層
8 内側の層
9 外側の層
D 厚さ
B 幅
Claims (15)
- リボンとして形成されたボンディングワイヤ(4)において、ボンディングワイヤ(4)が、互いに異なる材料から成る少なくとも2つの層(5,6,7)を有していることを特徴とするボンディングワイヤ。
- 前記層(5,6,7)が、互いに異なる電流容量を有している、請求項1記載のボンディングワイヤ。
- 前記層の融点が互いに異なっている、請求項1または2記載のボンディングワイヤ。
- 前記層(5,6,7)の導電率が互いに異なっている、請求項1から3までのいずれか1項記載のボンディングワイヤ。
- 前記層(5,6,7)の曲げ剛性および/または破断荷重および/または延性が互いに異なっている、請求項1から4までのいずれか1項記載のボンディングワイヤ。
- 前記層(5,6,7)の厚さが互いに異なっている、請求項1から5までのいずれか1項記載のボンディングワイヤ。
- 当該ボンディングワイヤ(4)が少なくとも3つの層(5,6,7)、つまり2つの外側の層(5,7)と、両外側の層(5,7)の間に位置する少なくとも1つの内側の層(6)とを有しており、該内側の層(6)の電流容量が、両外側の層(5,7)の電流容量よりも高く設定されている、請求項1から6までのいずれか1項記載のボンディングワイヤ。
- 前記外側の層(5,7)が、前記少なくとも1つの内側の層(6)よりも低い融点を有している、請求項7記載のボンディングワイヤ。
- 前記少なくとも1つの内側の層(6)が、前記外側の層(5,7)よりも高い導電率および/または前記外側の層(5,7)よりも低い曲げ剛性および/または前記外側の層(5,7)よりも低い破断荷重および/または前記外側の層(5,7)よりも低い延性を有しているか、または前記外側の層(5,7)が、前記少なくとも1つの内側の層(6)よりも高い導電率および/または前記少なくとも1つの内側の層(6)よりも低い曲げ剛性および/または前記少なくとも1つの内側の層(6)よりも低い破断荷重および/または前記少なくとも1つの内側の層(6)よりも低い延性を有している、請求項7または8記載のボンディングワイヤ。
- 外側の層(9)が内側の層(8)を全周にわたって取り囲んで被覆している、請求項1から9までのいずれか1項記載のボンディングワイヤ。
- 前記外側の層(9)の平均層厚さが約1nm〜200nm、特に約15nm〜30nm、有利には約20nm〜25nmである、請求項10記載のボンディングワイヤ。
- 前記外側の層(9)の平均層厚さが、当該ボンディングワイヤ(4)の平均厚さ(D)の1/10よりも小さく形成されている、請求項10または11記載のボンディングワイヤ。
- 当該ボンディングワイヤ(4)の平均厚さが、約25μm〜300μmである、請求項1から12までのいずれか1項記載のボンディングワイヤ。
- 当該ボンディングワイヤ(4)の平均幅が、約50μm〜1mmである、請求項1から13までのいずれか1項記載のボンディングワイヤ。
- 2つのコンタクト面(2,3)の間のボンディング結合部において、両コンタクト面(2,3)が、請求項1から14までのいずれか1項記載の少なくとも1つのボンディングワイヤ(4)によって、有利には超音波溶着により互いに結合されていることを特徴とするボンディング結合部。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE102006025870A DE102006025870A1 (de) | 2006-06-02 | 2006-06-02 | Mehrschichtiges Bond-Bändchen |
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JP2007324603A true JP2007324603A (ja) | 2007-12-13 |
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ID=38650489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007148406A Pending JP2007324603A (ja) | 2006-06-02 | 2007-06-04 | リボンとして形成されたボンディングワイヤ |
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US (1) | US20070290373A1 (ja) |
JP (1) | JP2007324603A (ja) |
DE (1) | DE102006025870A1 (ja) |
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WO2012049893A1 (ja) * | 2010-10-14 | 2012-04-19 | 田中電子工業株式会社 | 高温半導体素子用平角状銀(Ag)クラッド銅リボン |
JP2012227241A (ja) * | 2011-04-18 | 2012-11-15 | Sumitomo Metal Mining Co Ltd | Al−Cuボンディングリボン及びその製造方法 |
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JP2012001746A (ja) * | 2010-06-14 | 2012-01-05 | Tanaka Electronics Ind Co Ltd | 高温半導体素子用平角状パラジウム(Pd)又は白金(Pt)被覆銅リボン |
JP2013531393A (ja) * | 2010-07-22 | 2013-08-01 | ヘレウス マテリアルズ テクノロジー ゲーエムベーハー ウント カンパニー カーゲー | コアジャケットリボンワイヤ |
US9236166B2 (en) | 2010-07-22 | 2016-01-12 | Heraeus Deutschland GmbH & Co. KG | Core-jacket bonding wire |
WO2012049893A1 (ja) * | 2010-10-14 | 2012-04-19 | 田中電子工業株式会社 | 高温半導体素子用平角状銀(Ag)クラッド銅リボン |
JP2012227241A (ja) * | 2011-04-18 | 2012-11-15 | Sumitomo Metal Mining Co Ltd | Al−Cuボンディングリボン及びその製造方法 |
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US20070290373A1 (en) | 2007-12-20 |
DE102006025870A1 (de) | 2007-12-06 |
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