WO2012053129A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2012053129A1
WO2012053129A1 PCT/JP2011/002867 JP2011002867W WO2012053129A1 WO 2012053129 A1 WO2012053129 A1 WO 2012053129A1 JP 2011002867 W JP2011002867 W JP 2011002867W WO 2012053129 A1 WO2012053129 A1 WO 2012053129A1
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Prior art keywords
chip
pad
metal ribbon
semiconductor device
terminal pad
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PCT/JP2011/002867
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English (en)
French (fr)
Inventor
冨田佳宏
鳥居道治
矢口安武
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パナソニック株式会社
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Publication of WO2012053129A1 publication Critical patent/WO2012053129A1/ja

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Definitions

  • the present disclosure relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device in which a semiconductor chip and a base are connected by a metal ribbon and a manufacturing method thereof.
  • the joining area of a metal ribbon and a to-be-joined surface can be enlarged, the contact resistance of a junction part can also be lowered significantly. If a plurality of metal ribbons are connected in parallel, wiring resistance and contact resistance can be further reduced.
  • Ribbon bonds for joining metal ribbons are basically ultrasonic waves in a state where a metal ribbon is loaded and brought into contact with a pad using a wedge-type joining tool or the like, similarly to wire bonds for joining metal wires. Can be carried out by applying.
  • ribbon bonding since a wide metal ribbon is used, the bonding area is remarkably larger than that of a conventional wire bond. For this reason, a large load and ultrasonic power are required to obtain good bonding, and the condition range of the load and ultrasonic power that can obtain a good bonding state is much narrower than that in the case of wire bonding.
  • the chip pad of the semiconductor chip and the metal ribbon may be peeled off or the semiconductor chip may be damaged. For this reason, it is necessary to select a metal ribbon made of a material that can be easily bonded to the chip pad.
  • Aluminum thin films are often used for chip pads of semiconductor chips.
  • Gold is a material that can form a good connection with a chip pad made of an aluminum thin film.
  • an aluminum ribbon is usually used.
  • the terminal frame of the lead frame is generally subjected to a surface treatment such as gold plating, silver plating or palladium plating, which can be easily connected to a gold wire.
  • the aluminum ribbon has a problem that it is difficult to form a bond with the terminal pads subjected to the surface treatment. Even when the bonding between the aluminum ribbon and the terminal pad can be formed, deterioration with time due to the influence of humidity and temperature tends to occur, and there is a problem in reliability.
  • the present disclosure provides a semiconductor device in which a first surface of a metal ribbon in which the composition of the first surface and the second surface is different from each other is bonded to the chip pad, and the second surface. Is connected to the terminal pad.
  • a first exemplary semiconductor device includes a base having a chip mounting portion and a terminal pad on the upper surface, a semiconductor chip mounted on the chip mounting portion and having a chip pad, and the chip pad and the terminal pad connected to each other.
  • a metal ribbon, the metal ribbon having a first surface joined to the chip pad, and a second surface joined to the terminal pad opposite to the first surface, the first surface And a chip pad extending in a direction opposite to the base, and inverted above the semiconductor chip so that the second surface faces the top surface of the base.
  • a second exemplary semiconductor device includes a base having terminal pads, a semiconductor chip having chip pads mounted on the base, and a metal ribbon connecting the chip pads and the terminal pads.
  • the composition of the first surface and the composition of the second surface opposite to the first surface are different from each other so that the first surface and the chip pad are in contact with each other, and the second surface and the terminal pad are in contact with each other. It is joined to.
  • the illustrated semiconductor device can bond the metal ribbon to both the chip pad and the terminal pad under optimum conditions even when the surface materials of the chip pad and the terminal pad are different from each other. Therefore, the reliability of the semiconductor device can be greatly improved.
  • the metal ribbon may have a folded portion between a portion bonded to the chip pad and a portion bonded to the terminal pad.
  • the folded portion may be provided on the opposite side of the terminal pad across the portion joined to the chip pad.
  • the metal ribbon may be a stack of a plurality of metal layers made of different materials.
  • the layer exposed on the first surface or the layer exposed on the second surface of the plurality of metal layers may be a plating layer.
  • the metal ribbon may have a configuration in which the main component on one of the first surface and the second surface is aluminum and the main component on the other of the first surface and the second surface is copper.
  • the main component in one of the first surface and the second surface may be aluminum, and the main component in the other of the first surface and the second surface may be gold.
  • the base may be a lead frame.
  • the material of the surface of the chip pad and the material of the surface of the terminal pad may be different from each other.
  • An example method for manufacturing a semiconductor device includes a step (a) of preparing metal ribbons having different compositions on a first surface and compositions on a second surface opposite to the first surface; The step (b) of joining the metal ribbon and the chip pad so that the first surface is in contact with the chip pad of the semiconductor chip, and the second surface of the metal ribbon is in contact with the terminal pad of the base on which the semiconductor chip is mounted. (C) which joins a metal ribbon and a terminal pad.
  • the exemplary semiconductor device manufacturing method may further include a step (d) of turning back the metal ribbon connected to the chip pad between the step (b) and the step (c). With such a configuration, it becomes easy to join the first surface of the metal ribbon to the chip pad and the second surface to the terminal pad.
  • an ultrasonic wave is applied to the metal ribbon in a state where the first surface is brought into contact with the chip pad by applying pressure to the metal ribbon, and the step (c). Then, an ultrasonic wave may be applied to the metal ribbon in a state where the second surface and the terminal pad are brought into contact with each other by applying pressure to the metal ribbon.
  • a semiconductor device in which the metal ribbon is reliably bonded to both the chip pad of the semiconductor chip and the terminal pad of the lead frame can be realized.
  • (a) And (b) shows the semiconductor device which concerns on one Embodiment, (a) is a top view, (b) is sectional drawing in the Ib-Ib line
  • the exemplary semiconductor device includes a semiconductor chip 101 made of a vertical IGBT (insulated gate bipolar transistor) often used for power control on a lead frame 102 which is a base.
  • the semiconductor chip 101 is sealed with a sealing material 110 made of resin or the like. 1A and 1B, only the position of the sealing material 110 is shown.
  • the semiconductor chip 101 has a chip pad 112 and a chip pad 113 formed on one surface (upper surface).
  • the chip pad 112 is an emitter chip pad and is larger in size than the chip pad 113 which is a gate chip pad.
  • a collector electrode (not shown) is formed on the surface (back surface) opposite to the one surface of the semiconductor chip 101.
  • the lead frame 102 includes a die pad 121 which is a chip mounting portion on which the semiconductor chip 101 is mounted, a lead 122 connected to the die pad 121, and a lead 123 and a lead 124 which are insulated from the die pad 121.
  • the collector electrode of the semiconductor chip 101 and the die pad 121 are joined by solder 131, and the collector electrode is electrically connected to the die pad 121 and the lead 122.
  • the chip pad 113 of the semiconductor chip 101 is a gate chip pad and does not flow a large current. Therefore, the gold wire 132 is electrically connected to the terminal pad 124a of the lead 124.
  • the chip pad 112 is an emitter chip pad, and a large current flows. Therefore, the metal ribbon 104 is connected to the terminal pad 123a of the lead 123.
  • the metal ribbon 104 includes a first layer 141 and a second layer 142, which are made of different materials.
  • the first surface 104a where the first layer 141 is exposed is bonded so as to be in contact with the chip pad 112
  • the second surface 104b where the second layer 142 is exposed is bonded so as to be in contact with the terminal pad 123a. For this reason, it is folded back between the portion connected to the chip pad 112 and the portion connected to the terminal pad 123a, and a so-called reverse bond is formed.
  • the metal ribbon 104 extends from the joint portion joined to the chip pad 112 to the side opposite to the lead frame 102, and the second surface 104 b faces the lead frame 102 side above the semiconductor chip 101.
  • the second surface 104b is connected to the chip pad 112. Accordingly, the metal ribbon 104 is folded back on the side opposite to the terminal pad 123a across the portion joined to the chip pad 112, and is drawn out to the terminal pad 123a side over the semiconductor chip 101.
  • gold or nickel or the like is used for a chip pad of a semiconductor chip, but usually aluminum or an aluminum-based alloy is used.
  • Aluminum and gold are known as materials that can be easily bonded to aluminum.
  • an aluminum wire or a gold fine wire is usually used as a wire for wire bonding.
  • gold is expensive, it is difficult to use it as a metal ribbon for ribbon bonding.
  • copper is harder and less plastically deformed than aluminum. For this reason, when joining a copper ribbon with a chip pad, it is necessary to apply a big load and ultrasonic power to a copper ribbon, and there exists a possibility that a semiconductor chip may be damaged. For this reason, aluminum is generally used for the metal ribbon for ribbon bonding.
  • a thin gold wire is usually used for a wiring path through which a large current does not flow.
  • connection is performed by a wedge bond using a wedge tool. Since the wedge tool has directionality, the direction of the wedge tool when the aluminum fine wire is joined to the chip pad 113 restricts the angle of the aluminum wire drawing direction and naturally restricts the position of the terminal pad 124a.
  • the gold fine wire is connected to the chip pad 113 by ball bonding, it can be drawn out from the joint with the chip pad 113 in an arbitrary direction. Further, since the gold wire is flexible and can be bent easily, a loop can be formed at a short distance.
  • positioning freedom degree of the chip pad 113 and the terminal pad 124a which connect by using a gold fine wire can be made high. Furthermore, since the metal ribbon 104 is wide, it is difficult to bend left and right along the way, and the arrangement of the chip pads 112 and the terminal pads 123a is extremely restricted. For this reason, when the metal ribbon 104 and the fine wire are used together as in the present embodiment, it is preferable to use a gold fine wire having a high degree of freedom in wiring on the chip pad 113 side where a large current does not flow.
  • copper alloy is used for the base material of the lead frame.
  • the portion of the terminal pad where wire bonding is performed is subjected to surface treatment to improve wire connectivity.
  • the surface treatment performed when bonding a normal gold fine wire is gold plating, silver plating, palladium plating, or the like.
  • these surface treatments are not suitable for joining aluminum, and the surface treatment suitable for using aluminum wires is nickel plating.
  • nickel plating is applied to the terminal pad, it becomes difficult to join the gold wire.
  • the metal ribbon 104 is a laminate of a first layer 141 made of aluminum and a second layer 142 made of copper, and the first layer 141 is a chip pad 112 of the semiconductor chip 101 made of aluminum.
  • the second layer 142 is bonded to the terminal pad 123a of the lead frame on which gold plating is applied. Since the bonding between the first layer 141 and the chip pad 112 is a bonding between aluminum, it can be easily performed by ultrasonic waves and has high reliability. Further, the bonding between the second layer and the terminal pad 123a is a bonding between copper and gold plating, but there is no risk of element destruction even when a large load and ultrasonic power are applied to the lead frame. For this reason, the surface oxide film of the second layer 142 made of copper is sufficiently removed by ultrasonic waves, and a good bond can be formed.
  • the metal ribbon 104 of the present embodiment has the chip pad 112 and the terminal pad. A good bond can be formed to both of 123a. For this reason, a semiconductor device with high quality and high reliability can be realized.
  • the material of the first layer 141 may be not only aluminum but also an alloy containing aluminum as a main component. Further, it is sufficient that the chip pad 112 and the first layer 141 can be easily joined, and the material of the first layer 141 may be appropriately changed in accordance with the material of the chip pad 112.
  • the material of the terminal pad 123a and the second layer 142 may be not only copper but also an alloy containing copper as a main component. The terminal pad 123a and the second layer 142 may be easily joined, and the material of the second layer 142 may be changed as appropriate in accordance with the material of the terminal pad 123a. For example, when the chip pad 112 is made of gold and the terminal pad 123a is plated with nickel, the first layer 141 can be made of copper and the second layer 142 can be made of aluminum. .
  • the metal ribbon 104 may be formed, for example, by pressing and laminating a first thin film made of aluminum and a first thin film made of copper. Alternatively, a second thin film made of copper may be grown on one surface of the first thin film made of aluminum. What is necessary is just to form similarly in the case of materials other than aluminum and copper.
  • the thickness of the first layer 141 may be about 100 ⁇ m to 200 ⁇ m when the first layer 141 is aluminum.
  • the thickness of the second layer 142 may be about 50 ⁇ m to 300 ⁇ m when the second layer 142 is copper.
  • the metal ribbon 104 does not have to be two layers, and may be three or more layers.
  • a first layer 141 made of aluminum, a third layer 143 made of copper, and a second layer 142 made of gold may be sequentially stacked.
  • the second surface 104b as gold, copper surface oxidation can be suppressed.
  • gold is a material that is easily plastically deformed and can be easily ultrasonically bonded, bonding to the terminal pad 123a is further facilitated.
  • the second layer 142 made of gold may be formed by plating or vapor deposition. With such a configuration, an increase in cost can be suppressed even if gold is used.
  • the materials of the first layer 141, the second layer 142, and the third layer 143 may be appropriately changed according to the material of the chip pad 112 and the terminal pad 123a.
  • the second layer 142 may be made of silver or palladium instead of gold.
  • the surface treatment of the terminal pad 123a may be silver plating or palladium plating instead of gold plating.
  • the first layer 141 can be a plating layer.
  • the metal ribbon 104 only needs to have the first surface 104a bonded to the chip pad 112 and the second surface bonded to the terminal pad 123a. For this reason, instead of turning the metal ribbon 104 back, the first surface and the second surface of the metal ribbon 104 may be reversed by twisting the metal ribbon 104. However, the metal ribbon 104 can be joined easily by folding the metal ribbon 104 as described below. Further, since the stress applied to the metal ribbon 104 is smaller than when the metal ribbon 104 is twisted, the reliability is also improved.
  • metal ribbons are difficult to bend and difficult to change direction. For this reason, it is necessary to arrange the metal ribbon straight between the chip pad and the terminal pad, and the arrangement of the chip pad and the terminal pad is significantly restricted.
  • the metal ribbon 104 of the present embodiment can be folded back or twisted so as to be reversed, and the direction of the metal ribbon 104 can be changed when reversed. For this reason, the freedom degree of arrangement
  • 3A to 3C show a method for manufacturing the semiconductor device of this embodiment in the order of steps.
  • the metal ribbon 104 is placed on the chip pad 112 of the semiconductor chip 101 mounted on the die pad 121 using the ribbon supply tool 201.
  • the first surface 104 a where the first layer 141 of the metal ribbon 104 is exposed is in contact with the chip pad 112.
  • ultrasonic waves are applied to the metal ribbon 104 while bringing the metal ribbon 104 and the chip pad 112 into close contact with each other using the bonding tool 202.
  • the metal ribbon 104 is plastically deformed by the load of the joining tool 202, and frictional heat is generated by ultrasonic waves applied to the chip pad 112 and the metal ribbon 104, thereby accelerating alloying at the interface between the chip pad 112 and the metal ribbon 104. And joining is made.
  • a normal wedge bonding tool or the like can be used as the welding tool 202.
  • the ribbon supply tool 201 is moved to the opposite side of the terminal pad 123a while feeding out the metal ribbon 104.
  • the metal ribbon 104 and the chip pad 112 are bonded again by the bonding tool 202 at a position spaced by a predetermined distance from the first bonding portion.
  • the bonding area between the chip pad 112 and the metal ribbon 104 can be increased by performing bonding a plurality of times on the same chip pad 112. Therefore, the resistance in the current supply path to the emitter of the IGBT can be lowered.
  • the ribbon supply tool 201 is further moved to the side opposite to the terminal pad 123a, and the ribbon supply tool 201 is pulled upward at a predetermined position. Is moved to the terminal pad 123a side. Thereby, the metal ribbon 104 is folded back, and the second surface 104b where the second layer 142 is exposed becomes the lower surface. Further, the ribbon supply tool 201 is moved to the terminal pad 123 a, the metal ribbon 104 is disposed on the terminal pad 123 a, and the terminal pad 123 a and the metal ribbon 104 are joined by the joining tool 202. Since the metal ribbon 104 is folded back, the second surface 104b from which the second layer 142 is exposed and the terminal pad 123a can be joined.
  • the metal ribbon 104 may be cut with a cutter or the like between the portion of the metal ribbon 104 joined to the terminal pad 123a and the ribbon supply tool 201.
  • the base is a lead frame
  • the base may have any configuration as long as it has a function of mounting a semiconductor chip.
  • a wiring board in which a conductor pattern is laminated on an inorganic or organic insulating plate may be used.
  • the semiconductor chip may be another semiconductor chip such as a diode, a bipolar transistor, and a field effect transistor instead of the IGBT.
  • the semiconductor device in which the semiconductor chip 101 is sealed is shown, not only the semiconductor chip 101 but also other semiconductor elements may be integrated.
  • the semiconductor chip 101 mounted on the lead frame 102, the first semiconductor component 152, the second semiconductor component 153, and the like are mixedly mounted on the cap substrate 151A.
  • the semiconductor device may be a module sealed with a cap 151B.
  • the cap 151B shows only the position.
  • the first semiconductor component 152 and the second semiconductor component 153 may be any type, for example, passive elements such as capacitors, resistor elements, and inductor elements, and active elements such as integrated circuits, transistors, and diodes. Is included.
  • two types of semiconductor components other than the semiconductor chip are mixedly mounted is shown, one type may be used, or three or more types may be mounted together.
  • a semiconductor device in which a plurality of elements are mounted together may be a resin-encapsulated type.
  • a semiconductor device having a single semiconductor chip may be a cap type.
  • a resin-encapsulated type is used for a small and thin micro device, and a cap type is often used for an application that requires high reliability such as a vehicle-mounted product.
  • a module in which a plurality of elements are mixed is often used.
  • the metal ribbon can be bonded to both the chip pad of the semiconductor chip and the terminal pad of the lead frame with high reliability. It is useful as a device and a manufacturing method thereof.

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Abstract

　半導体装置は、端子パッド１２３ａを有するチップ搭載部材１０２と、チップ搭載部材１０２の上に搭載された、チップパッド１１２を有する半導体チップ１０１と、チップパッド１１２と端子パッド１２３ａとを接続する金属リボン１０４とを備えている。金属リボンは１０４、チップパッド１０２と接合された第１の面１０４ａと、第１の面１０４ａと反対側で且つ端子パッド１２３ａと接合された第２の面１２０４ｂとを有し、第１の面１０４ａとチップパッド２２３との接合部から、基台１０２と反対の方向に延び、半導体チップ１０１の上方において、第２の面１０４ｂが基台１０２の上面と向かい合うように反転している。

Description

半導体装置及びその製造方法
　本開示は、半導体装置及びその製造方法に関し、特に半導体チップと基台との間を金属リボンにより接続した半導体装置及びその製造方法に関する。
　近年、炭酸ガス排出量の規制等をはじめとして環境問題への対応の要求が高まって来ている。このため、電気機器の消費電力低減が進められており、特にパワー半導体の低損失化が強く求められている。パワー半導体の低損失化のためには、パワー半導体の素子自体を低損失化するだけでなく、パワー半導体のパッケージ全体としての低損失化を行う必要がある。パッケージ全体としての低損失化を図るために、例えば、半導体チップのチップパッドとリードフレームの端子パッドとの間を、従来のワイヤに代えて幅が広い金属リボンによって接続することにより、配線抵抗を下げることが検討されている（例えば、特許文献１を参照。）。金属リボンの断面積は、従来のワイヤよりも遥かに大きいため、配線抵抗を格段に下げることができる。また、金属リボンと被接合面との接合面積を大きくできるため、接合部の接触抵抗も格段に下げることができる。複数の金属リボンを並列に接続すれば、さらに配線抵抗及び接触抵抗を低減できる。
特開２００４－３３６０４３号公報
　しかしながら、従来の金属リボンを用いた半導体装置は、以下のような問題を有している。金属リボンを接合するリボンボンドは、基本的には金属ワイヤを接合するワイヤボンドと同様に、ウェッジ型の接合ツール等を用いて、金属リボンに荷重をかけてパッドと接触させた状態で超音波を印加することにより行うことができる。しかし、リボンボンドの場合には幅広の金属リボンを用いるため、従来のワイヤボンドに比べて接合面積が格段に大きくなる。このため、良好な接合を得るために大きな荷重及び超音波パワーが必要となり、良好な接合状態を得ることができる荷重及び超音波パワーの条件範囲がワイヤボンドの場合よりも格段に狭くなる。
　半導体チップのチップパッドと金属リボンとを接合させるために必要な加重及び超音波パワーが大きくなると、チップパッドが剥離したり、半導体チップへのダメージが生じたりするおそれがある。このため、チップパッドとの接合ができるだけ容易な材質の金属リボンを選択する必要がある。
　半導体チップのチップパッドには、アルミニウム薄膜が良く用いられている。アルミニウム薄膜からなるチップパッドと良好な接続を形成できる材料として金がある。しかし、金リボンは高価であるため、通常はアルミニウムリボンが用いられる。一方、リードフレームの端子パッドは、金ワイヤと接続が容易な金めっき、銀めっき又はパラジウムめっき等の表面処理がされていることが一般的である。しかし、アルミニウムリボンは、これらの表面処理がされた端子パッドとの接合を形成しにくいという問題を有している。アルミニウムリボンと端子パッドとの接合が形成できた場合においても、湿度及び温度の影響による経時劣化が生じやすく、信頼性に問題がある。
　本開示は前記の問題を解決し、金属リボンが半導体チップのチップパッド及びリードフレームの端子パッドの双方と信頼性良く接合された半導体装置を実現できるようにすることを目的とする。
　前記の目的を達成するため、本開示は半導体装置を、第１の面と第２の面との組成が互いに異なっている金属リボンの第１の面がチップパッドと接合され、第２の面が端子パッドと接合されている構成とする。
　具体的に第１の例示の半導体装置は、チップ搭載部及び端子パッドを上面に有する基台と、チップ搭載部に搭載され、チップパッドを有する半導体チップと、チップパッドと端子パッドとを接続する金属リボンとを備え、金属リボンは、チップパッドと接合された第１の面と、第１の面と反対側で且つ端子パッドと接合された第２の面とを有し、第１の面とチップパッドとの接合部から、基台と反対の方向に延び、半導体チップの上方において、第２の面が前記基台の上面と向かい合うように反転している。
　第２の例示の半導体装置は、端子パッドを有する基台と、基台に搭載された、チップパッドを有する半導体チップと、チップパッドと端子パッドとを接続する金属リボンとを備え、金属リボンは、第１の面の組成と、第１の面と反対側の第２の面の組成とが互いに異なり、第１の面とチップパッドとが接し、第２の面と端子パッドとが接するように接合されている。
　例示の半導体装置は、チップパッドと端子パッドとの表面の材質が互いに異なる場合であっても、金属リボンをチップパッド及び端子パッドの双方と最適な条件で接合することが可能となる。従って、半導体装置の信頼性を大幅に向上することができる。
　例示の半導体装置において、金属リボンは、チップパッドと接合された部分と端子パッドと接合された部分との間に折り返し部を有していてもよい。
　例示の半導体装置において、折り返し部分は、チップパッドと接合された部分を挟んで端子パッドと反対側に設けられていてもよい。
　例示の半導体装置において、金属リボンは、互いに材質が異なる複数の金属層の積層体とすればよい。
　例示の半導体装置において、複数の金属層のうちの第１の面に露出する層又は第２の面に露出する層は、めっき層としてもよい。
　例示の半導体装置において、金属リボンは、第１の面及び第２の面の一方における主成分がアルミニウムであり、第１の面及び第２の面の他方における主成分が銅である構成としてもよく、第１の面及び第２の面の一方における主成分がアルミニウムであり、第１の面及び第２の面の他方における主成分が金である構成としてもよい。
　例示の半導体装置において、基台は、リードフレームであってもよい。
　本開示の半導体装置において、チップパッドの表面の材質と、端子パッドの表面の材質とは互いに異なっていてもよい。
　例示の半導体装置の製造方法は、第１の面における組成と、第１の面と反対側の第２の面における組成とが互いに異なる金属リボンを準備する工程(ａ)と、金属リボンの第１の面が半導体チップのチップパッドと接するように、金属リボンとチップパッドとを接合する工程（ｂ）と、金属リボンの第２の面が半導体チップを搭載する基台の端子パッドと接するように、金属リボンと端子パッドとを接合する工程（ｃ）とを備えている。
　例示の半導体装置の製造方法は、工程（ｂ）と工程（ｃ）との間に、チップパッドと接続された金属リボンを折り返す工程（ｄ）をさらに備えていてもよい。このような構成とすれば、金属リボンの第１の面をチップパッドと接合し、第２の面を端子パッドと接合することが容易となる。
　例示の半導体装置の製造方法において、工程（ｂ）では、金属リボンに圧力を加えて第１の面とチップパッドとを接触させた状態で、金属リボンに超音波を印加し、工程（ｃ）では、金属リボンに圧力を加えて第２の面と端子パッドとを接触させた状態で、金属リボンに超音波を印加すればよい。
　本開示の半導体装置によれば、金属リボンが半導体チップのチップパッド及びリードフレームの端子パッドの双方と信頼性良く接合された半導体装置を実現できる。
(ａ)及び（ｂ）は一実施形態に係る半導体装置を示し、(ａ)は平面図であり、（ｂ）は(ａ)のＩｂ－Ｉｂ線における断面図である。 金属リボンの変形例を示す断面図である。 （ａ）～（ｃ）は一実施形態に係る半導体装置の製造方法を工程順に示す断面図である。 （ａ）及び（ｂ）は一実施形態に係る半導体装置の変形例を示し、（ａ）は平面図であり、（ｂ）は（ａ）のIVｂ－IVｂ線における断面図である。
　例示の半導体装置は、図１（ａ）及び（ｂ）に示すように基台であるリードフレーム１０２にパワー制御によく用いられる縦型のＩＧＢＴ（絶縁ゲートバイポーラトランジスタ）からなる半導体チップ１０１が搭載されている。半導体チップ１０１は樹脂等からなる封止材１１０により封止されている。図１（ａ）及び（ｂ）において封止材１１０は位置のみを示している。半導体チップ１０１は、一の面（上面）に形成されたチップパッド１１２及びチップパッド１１３を有している。チップパッド１１２は、エミッタチップパッドであり、ゲートチップパッドであるチップパッド１１３よりもサイズが大きい。半導体チップ１０１の一の面と反対側の面（裏面）にはコレクタ電極（図示せず）が形成されている。
　リードフレーム１０２は、半導体チップ１０１を搭載するチップ搭載部であるダイパッド１２１と、ダイパッド１２１と接続されたリード１２２と、ダイパッド１２１と絶縁されたリード１２３及びリード１２４とを有している。半導体チップ１０１のコレクタ電極とダイパッド１２１とは、半田１３１により接合されており、コレクタ電極は、ダイパッド１２１及びリード１２２と電気的に接続されている。コレクタ電極を半田１３１によりダイパッド１２１の上に固定することにより、コレクタ電極とダイパッド１２１との間の接続抵抗を低減できるだけでなく、半導体チップ１０１からダイパッド１２１への熱伝導による放熱効果を向上させることができる。
　半導体チップ１０１のチップパッド１１３は、ゲートチップパッドであり大きな電流が流れない。このため、金ワイヤ１３２によりリード１２４の端子パッド１２４ａと電気的に接続されている。チップパッド１１２は、エミッタチップパッドであり大電流が流れる。このため、金属リボン１０４によりリード１２３の端子パッド１２３ａと接続されている。
　金属リボン１０４は互いに材質が異なる第１の層１４１と第２の層１４２とが積層されている。第１の層１４１が露出した第１の面１０４ａがチップパッド１１２と接するように接合され、第２の層１４２が露出した第２の面１０４ｂが端子パッド１２３ａと接するように接合されている。このため、チップパッド１１２と接続された部分と端子パッド１２３ａと接続された部分との間で折り返されており、いわゆるリバースボンドが形成されている。具体的には、金属リボン１０４は、チップパッド１１２と接合された接合部から、リードフレーム１０２と反対側に延び、半導体チップ１０１の上方において、第２の面１０４ｂがリードフレーム１０２側に向くように反転され、第２の面１０４ｂがチップパッド１１２と接続されている。従って、金属リボン１０４はチップパッド１１２と接合された部分を挟んで端子パッド１２３ａと反対側において折り返され、半導体チップ１０１の上を通って端子パッド１２３ａ側に引き出されている。
　半導体チップのチップパッドには、金又はニッケル等を用いる場合もあるが、通常はアルミニウム又はアルミニウム系合金が用いられている。アルミニウムと容易にボンディングできる材料としては、アルミニウム及び金が知られている。このため、ワイヤボンディング用のワイヤには、通常はアルミニウム線又は金細線が用いられている。しかし、金は高価であるため、リボンボンディング用の金属リボンとして用いることは困難である。また、近年では、ワイヤに銅を用いることが検討されているが、銅はアルミニウムと比べて硬く塑性変形しにくい。このため、銅リボンをチップパッドと接合する場合には、銅リボンに大きな荷重及び超音波パワーを加える必要があり、半導体チップにダメージが生じるおそれがある。このため、リボンボンディング用の金属リボンにはアルミニウムが一般的に用いられている。
　一方、大電流が流れない配線経路には、通常は金細線が用いられている。アルミニウム細線を用いる場合にはウェッジツールを用いたウェッジボンドにより接続が行われる。ウェッジツールには方向性があるため、アルミニウム細線をチップパッド１１３と接合した際のウェッジツールの方向により、アルミニウム細線の引き出し方向の角度が制約され、端子パッド１２４ａの位置がおのずと制約される。一方、金細線はボールボンドによりチップパッド１１３と接続するため、チップパッド１１３との接合部から任意の方向に引き出すことができる。また、金細線は柔軟で容易に曲げることができるため短い距離でのループ形成を行うことができる。このため、金細線を用いることにより接続を行うチップパッド１１３と端子パッド１２４ａとの配置自由度を高くできる。さらに、金属リボン１０４は幅広であるため途中で左右に曲げることが困難であり、チップパッド１１２と端子パッド１２３ａとの配置が極端に制約される。このため、本実施形態のように金属リボン１０４と細線とを併用する場合には、大電流が流れないチップパッド１１３側には配線自由度が高い金細線を用いるのが好ましい。
　一般的にリードフレームの母材には銅合金が用いられている。ワイヤボンドを行う端子パッドの部分には、表面処理を行いワイヤの接続性を向上させている。通常の金細線をボンディングする場合に行われる表面処理は、金めっき、銀めっき又はパラジウムめっき等である。しかし、これらの表面処理はアルミニウムの接合には不向きであり、アルミニウム線を用いる場合に適した表面処理はニッケルめっきである。このため、アルミニウムリボンを用いるリボンボンディングを行う場合には、端子パッドにニッケルめっきを行うことが好ましい。一方、端子パッドにニッケルめっきを行うと、金細線との接合が困難となる。このため、アルミニウムリボンを接続する端子パッドにはニッケルめっきを行い、金細線を接続する端子パッドには金めっき又は銀めっき等を行うことが好ましい。しかし、リードフレームの表面を部分的にめっき処理する場合には、ストライプ状にマスキングを行いめっき処理を行う必要がある。このため、端子パッド同士が近接している場合には、端子パッドごとにめっきの種類を代えることは極めて困難である。このため、すべての端子パッドに金細線を接続しやすい銀めっき又は金めっき等の表面処理を行うことが一般に行われており、アルミニウムリボンと端子パッドとを高品質で且つ信頼性良く接合することは困難である。
　本実施形態においては、金属リボン１０４をアルミニウムからなる第１の層１４１と銅からなる第２の層１４２との積層体とし、第１の層１４１をアルミニウムからなる半導体チップ１０１のチップパッド１１２と接合させ、第２の層１４２を金めっきが施されたリードフレームの端子パッド１２３ａと接合させている。第１の層１４１とチップパッド１１２との接合は、アルミニウム同士の接合であるため、超音波により容易に行うことができ信頼性も高い。また、第２の層と端子パッド１２３ａとの接合は、銅と金めっきとの接合であるが、リードフレームにおいては大きな荷重及び超音波パワーを印加しても、素子破壊のおそれがない。このため、銅からなる第２の層１４２の表面酸化膜が超音波により十分除去され、良好な接合が形成できる。
　このように、チップパッド１１２との接合に適した材料と、端子パッド１２３ａとの接合に適した材料が異なっている場合であっても、本実施形態の金属リボン１０４はチップパッド１１２及び端子パッド１２３ａの両方に対して良好な接合を形成することができる。このため、高品質で且つ信頼性が高い半導体装置を実現できる。
　なお、第１の層１４１の材質は、アルミニウムだけでなくアルミニウムを主成分とする合金等であってもよい。また、チップパッド１１２と第１の層１４１とが容易に接合できればよく、チップパッド１１２の材質に合わせて第１の層１４１の材質は適宜変更してかまわない。同様に端子パッド１２３ａと第２の層１４２の材質も、銅だけでなく銅を主成分とする合金等であってもよい。また、端子パッド１２３ａと第２の層１４２とが容易に接合できればよく、端子パッド１２３ａの材質に合わせて第２の層１４２の材質は適宜変更してかまわない。例えば、チップパッド１１２が金からなり、端子パッド１２３ａにニッケルめっきが施されているような場合には、第１の層１４１を銅とし、第２の層１４２をアルミニウムとすることも可能である。
　金属リボン１０４は、例えば、アルミニウムからなる第１の薄膜と、銅からなる第１の薄膜とを加圧して積層することにより形成すればよい。また、アルミニウムからなる第１の薄膜の一の面に銅からなる第２の薄膜を成長させることにより形成してもよい。アルミニウム及び銅以外の材料の場合にも同様にして形成すればよい。第１の層１４１の厚さは、第１の層１４１がアルミニウムである場合には１００μｍ～２００μｍ程度とすればよい。第２の層１４２の厚さは、第２の層１４２が銅の場合には５０μｍ～３００μｍ程度とすればよい。
　金属リボン１０４は２層である必要はなく、３層以上であってもよい。例えば、図２に示すように、アルミニウムからなる第１の層１４１と、銅からなる第３の層１４３と、金からなる第２の層１４２とが順次積層された構成としてもよい。第２の面１０４ｂを金とすることにより、銅の表面酸化を抑えることができる。また、金は塑性変形しやすく超音波接合が容易な材料であるため、端子パッド１２３ａとの接合がさらに容易となる。金からなる第２の層１４２は、めっき又は蒸着等により形成すればよい。このような構成であれば、金を用いてもコストの上昇を抑えることができる。なお、第１の層１４１、第２の層１４２及び第３の層１４３の材質は、チップパッド１１２及び端子パッド１２３ａの材質に応じて適宜変更してかまわない。例えば、第２の層１４２を金に代えて、銀又はパラジウム等としてもよい。また、端子パッド１２３ａの表面処理も、金めっきに代えて銀めっき又はパラジウムめっき等としてもよい。さらに、第１の層１４１をめっき層とすることも可能である。
　金属リボン１０４は、第１の面１０４ａがチップパッド１１２と接合され、第２の面が端子パッド１２３ａと接合されていればよい。このため、金属リボン１０４を折り返す代わりに、金属リボン１０４をねじることにより金属リボン１０４の第１の面と第２の面とを反転させてもよい。但し、以下に示すように金属リボン１０４を折り返す構成とすることにより、金属リボン１０４の接合が容易となる。また、金属リボン１０４をねじった場合と比べて金属リボン１０４に加わる応力が小さくなるため、信頼性も向上する。
　また、従来の金属リボンは曲げることが難しく、途中で方向を変えることが困難である。このため、チップパッドと端子パッドとの間に金属リボンを真っ直ぐに配置する必要があり、チップパッドと端子パッドの配置が著しく制約される。しかし、本実施形態の金属リボン１０４は、折り返したり、反転するようにねじったりすることができ、反転する際に金属リボン１０４の方向を変えることができる。このため、チップパッド１１２と端子パッド１２３ａとの配置の自由度を格段に高くすることができる。例えば、金属リボン１０４の折り返し部分で金属リボンの方向を４５度変えることも可能となる。
　図３(ａ)～（ｃ）は、本実施形態の半導体装置の製造方法を工程順に示している。まず、図３(ａ)に示すようにリボン供給ツール２０１を用いて、ダイパッド１２１の上に搭載された半導体チップ１０１のチップパッド１１２の上に金属リボン１０４を配置する。この際、金属リボン１０４の第１の層１４１が露出した第１の面１０４ａがチップパッド１１２と接するようにする。続いて、接合ツール２０２を用いて金属リボン１０４とチップパッド１１２とを密着させつつ、金属リボン１０４に超音波を印加する。接合ツール２０２の荷重によって金属リボン１０４が塑性変形すると共に、チップパッド１１２及び金属リボン１０４に印加された超音波により摩擦熱が発生し、チップパッド１１２と金属リボン１０４との界面の合金化が加速され接合が成される。接合ツール２０２は通常のウェッジボンディング用の接合ツール等を用いることができる。
　次に、図３（ｂ）に示すように、金属リボン１０４を繰り出しつつ、リボン供給ツール２０１を端子パッド１２３ａと反対側に移動させる。１回目の接合部から所定の間隔を置いた位置において再び接合ツール２０２により金属リボン１０４とチップパッド１１２とを接合する。このように同じチップパッド１１２上において複数回の接合を行うことにより、チップパッド１１２と金属リボン１０４との接合面積を大きくすることがでる。従って、ＩＧＢＴのエミッタへの電流供給経路における抵抗を下げることができる。
　次に、図３（ｃ）に示すように、金属リボン１０４を繰り出しつつ、リボン供給ツール２０１をさらに端子パッド１２３ａと反対側に移動させ、所定の位置においてリボン供給ツール２０１を上側に引き上げ、今度は端子パッド１２３ａ側に移動させる。これにより、金属リボン１０４が折り返され、第２の層１４２が露出した第２の面１０４ｂが下面となる。さらに、リボン供給ツール２０１を端子パッド１２３ａまで移動させ、端子パッド１２３ａ上に金属リボン１０４を配置して、接合ツール２０２によって端子パッド１２３ａと金属リボン１０４とを接合する。金属リボン１０４は折り返されているため、第２の層１４２が露出した第２の面１０４ｂと端子パッド１２３ａとが接した状態で接合することができる。
　この後、金属リボン１０４の端子パッド１２３ａと接合された部分と、リボン供給ツール２０１との間において金属リボン１０４をカッター等により切断すればよい。
　なお、チップパッド１１２と金属リボン１０４とを２回接合する例を示したが、１回の接合としても、３回以上の接合としてもよい。
　本実施形態において、基台がリードフレームである例を示したが、基台は半導体チップを搭載する機能を有していればどのような構成であってもよい。例えば、無機又は有機の絶縁板に導体パターンを積層した配線基板としてもよい。また、半導体チップはＩＧＢＴに代えてダイオード、バイポーラトランジスタ及び電界効果トランジスタ等の他の半導体チップであってもよい。
　また、半導体チップ１０１が封止された半導体装置を示したが、半導体チップ１０１だけでなく他の素子が一体となった半導体装置としてもよい。例えば、図４（ａ）及び（ｂ）に示すようにキャップ基板１５１Ａの上に、リードフレーム１０２に搭載された半導体チップ１０１と、第１の半導体部品１５２及び第２の半導体部品１５３等が混載され、キャップ１５１Ｂにより封止されたモジュールである半導体装置としてもよい。図４（ａ）においてキャップ１５１Ｂは位置のみを示している。第１の半導体部品１５２及び第２の半導体部品１５３は、どのようなものであってもよいが、例えば、コンデンサ、抵抗素子及びインダクタ素子等の受動素子並びに集積回路、トランジスタ及びダイオード等の能動素子が含まれる。また、半導体チップ以外に２種類の半導体部品が混載されている例を示したが、１種類でもよく、３種類以上が混載されていてもよい。
　複数の素子を混載した半導体装置を樹脂封止タイプとしてもよい。また、半導体チップ単体の半導体装置をキャップタイプとしてもよい。一般に、小型で薄いマイクロデバイスとする場合には樹脂封止タイプが用いられ、車載品等の高い信頼性が要求される用途の場合にはキャップタイプが用いられることが多い。車載品等の場合には、複数の素子が混載されたモジュールとすることが多い。
　本開示の半導体装置及びその製造方法は、金属リボンを半導体チップのチップパッド及びリードフレームの端子パッドの双方と信頼性良く接合でき、特に半導体チップと端子パッドとの間を金属リボンにより接続した半導体装置及びその製造方法等として有用である。
１０１　　　半導体チップ
１０２　　　リードフレーム
１０４　　　金属リボン
１０４ａ　　第１の面
１０４ｂ　　第２の面
１１０　　　封止材
１１２　　　チップパッド
１１３　　　チップパッド
１２１　　　ダイパッド
１２２　　　リード
１２３　　　リード
１２３ａ　　端子パッド
１２４　　　リード
１２４ａ　　端子パッド
１３１　　　半田
１３２　　　金ワイヤ
１４１　　　第１の層
１４２　　　第２の層
１４３　　　第３の層
１５１Ａ　　キャップ基板
１５１Ｂ　　キャップ
１５２　　　第１の半導体部品
１５３　　　第２の半導体部品
２０１　　　リボン供給ツール
２０２　　　接合ツール

Claims (13)

  1. 　チップ搭載部及び端子パッドを上面に有する基台と、
    　前記チップ搭載部に搭載され、チップパッドを有する半導体チップと、
    　前記チップパッドと前記端子パッドとを接続する金属リボンとを備え、
    　前記金属リボンは、
    　前記チップパッドと接合された第１の面と、前記第１の面と反対側で且つ前記端子パッドと接合された第２の面とを有し、
    　前記第１の面と前記チップパッドとの接合部から、前記基台と反対の方向に延び、
    　前記半導体チップの上方において、前記第２の面が前記基台の上面と向かい合うように反転していることを特徴とする半導体装置。
  2. 　チップ搭載部及び端子パッドを上面に有する基台と、
    　前記チップ搭載部に搭載され、チップパッドを有する半導体チップと、
    　前記チップパッドと前記端子パッドとを接続する金属リボンとを備え、
    　前記金属リボンは、第１の面の組成と、前記第１の面と反対側の第２の面の組成とが互いに異なり、前記第１の面と前記チップパッドとが接し、前記第２の面と前記端子パッドとが接するように接合されていることを特徴とする半導体装置。
  3. 　前記金属リボンは、前記チップパッドと接合された部分と前記端子パッドと接合された部分との間に折り返し部を有していることを特徴とする請求項２に記載の半導体装置。
  4. 　前記折り返し部分は、前記チップパッドと接合された部分を挟んで前記端子パッドと反対側に設けられていることを特徴とする請求項３に記載の半導体装置。
  5. 　前記金属リボンは、互いに材質が異なる複数の金属層の積層体であることを特徴とする請求項１又は２に記載の半導体装置。
  6. 　前記複数の金属層のうちの前記第１の面に露出する層又は前記第２の面に露出する層は、めっき層であることを特徴とする請求項５に記載の半導体装置。
  7. 　前記金属リボンは、前記第１の面及び第２の面の一方における主成分がアルミニウムであり、前記第１の面及び第２の面の他方における主成分が銅であることを特徴とする請求項１又は２に記載の半導体装置。
  8. 　前記金属リボンは、前記第１の面及び第２の面の一方における主成分がアルミニウムであり、前記第１の面及び第２の面の他方における主成分が金であることを特徴とする請求項１又は２に記載の半導体装置。
  9. 　前記基台は、リードフレームであることを特徴とする請求項１又は２に記載の半導体装置。
  10. 　前記チップパッドの表面の材質と、前記端子パッドの表面の材質とは互いに異なっていることを特徴とする請求項１又は２に記載の半導体装置。
  11. 　第１の面における組成と、前記第１の面と反対側の第２の面における組成とが互いに異なる金属リボンを準備する工程(ａ)と、
    　前記金属リボンの前記第１の面が半導体チップのチップパッドと接するように、前記金属リボンと前記チップパッドとを接合する工程（ｂ）と、
    　前記金属リボンの前記第２の面が前記半導体チップを搭載する基台の端子パッドと接するように、前記金属リボンと前記端子パッドとを接合する工程（ｃ）とを備えていることを特徴とする半導体装置の製造方法。
  12. 　前記工程（ｂ）と前記工程（ｃ）との間に、前記チップパッドと接続された前記金属リボンを折り返す工程（ｄ）をさらに備えていることを特徴とする請求項１１に記載の半導体装置の製造方法。
  13. 　前記工程（ｂ）では、前記金属リボンに圧力を加えて前記第１の面と前記チップパッドとを接触させた状態で、前記金属リボンに超音波を印加し、
    　前記工程（ｃ）では、前記金属リボンに圧力を加えて前記第２の面と前記端子パッドとを接触させた状態で、前記金属リボンに超音波を印加することを特徴とする請求項１１に記載の半導体装置の製造方法。
PCT/JP2011/002867 2010-10-18 2011-05-24 半導体装置及びその製造方法 WO2012053129A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056917A (ja) * 2012-09-12 2014-03-27 Mitsubishi Electric Corp 電力用半導体装置および電力用半導体装置の製造方法
EP3021356A1 (de) * 2014-11-17 2016-05-18 Robert Bosch Gmbh Verbindungsanordnung mit einem mehrschichtigen bondflachdraht
DE102018206482A1 (de) * 2018-04-26 2019-10-31 Infineon Technologies Ag Halbleiterbauelement mit einem Clip aus Verbundmaterial

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JP2009206482A (ja) * 2008-01-28 2009-09-10 Renesas Technology Corp 半導体装置およびその製造方法
JP2010161222A (ja) * 2009-01-08 2010-07-22 Sony Corp 半導体パッケージの製造方法、半導体パッケージ及び半導体チップ
JP2011114137A (ja) * 2009-11-26 2011-06-09 Mitsubishi Electric Corp 電力用半導体装置

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Publication number Priority date Publication date Assignee Title
JP2009206482A (ja) * 2008-01-28 2009-09-10 Renesas Technology Corp 半導体装置およびその製造方法
JP2010161222A (ja) * 2009-01-08 2010-07-22 Sony Corp 半導体パッケージの製造方法、半導体パッケージ及び半導体チップ
JP2011114137A (ja) * 2009-11-26 2011-06-09 Mitsubishi Electric Corp 電力用半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056917A (ja) * 2012-09-12 2014-03-27 Mitsubishi Electric Corp 電力用半導体装置および電力用半導体装置の製造方法
EP3021356A1 (de) * 2014-11-17 2016-05-18 Robert Bosch Gmbh Verbindungsanordnung mit einem mehrschichtigen bondflachdraht
DE102018206482A1 (de) * 2018-04-26 2019-10-31 Infineon Technologies Ag Halbleiterbauelement mit einem Clip aus Verbundmaterial
US10971457B2 (en) 2018-04-26 2021-04-06 Infineon Technologies Ag Semiconductor device comprising a composite material clip
DE102018206482B4 (de) 2018-04-26 2024-01-25 Infineon Technologies Ag Halbleiterbauelement mit einem Verbundwerkstoffclip aus Verbundmaterial

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