JP5271778B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5271778B2 JP5271778B2 JP2009096165A JP2009096165A JP5271778B2 JP 5271778 B2 JP5271778 B2 JP 5271778B2 JP 2009096165 A JP2009096165 A JP 2009096165A JP 2009096165 A JP2009096165 A JP 2009096165A JP 5271778 B2 JP5271778 B2 JP 5271778B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 155
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims description 56
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 53
- 238000002788 crimping Methods 0.000 claims description 33
- 229920005989 resin Polymers 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 23
- 238000007789 sealing Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 description 23
- 229910000679 solder Inorganic materials 0.000 description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000005452 bending Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 241000272168 Laridae Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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Description
本実施の形態の半導体装置は、面実装パッケージの一種のフラットリードパッケージ(Flat Lead Package:以下、FLPという)に適用したものである。図1(a)は、このFLPの上面を示す平面図、(b)は、短辺側の側面図、図2は、裏面(実装面)を示す平面図、図3は、内部構造を示す平面図、図4は、図3のA−A線に沿った断面図である。
図27に示すように、本実施の形態のFLPは、パワーMOSFETのオン抵抗をさらに低減するために、半導体チップ1のソースパッド6とソースポスト3Sを複数本のAlリボン8で接続してもよい。ここでは、ソースパッド6とソースポスト3Sを2本のAlリボン8で接続した例を示している。なお、ソースパッド6とソースポスト3Sを接続するAlリボン8の本数は、3本以上であってもよい。
一般に、FLPを含む樹脂封止型半導体装置の製造工程では、前記図16に示したような、複数のダイパッド部3Dを設けたリードフレームLFが使用される。
2 モールド樹脂
3 リード
3D ダイパッド部
3G ゲートポスト
3S ソースポスト
4 導電性接着剤
5 ゲートパッド
6 ソースパッド
7 Auワイヤ
8 Alリボン
8a 厚膜部
8b 厚膜部
8c 薄膜部
10 ウェッジツール
10a 凹部
10b 凹溝
10c 凸部
11 リボンガイド
12 カッター
20 ウェッジツール
22 モールド樹脂
23 リード
23S ソースポスト
30 n+型単結晶シリコン基板
31 n−型単結晶シリコン層
32 p型半導体領域
33 n+型半導体領域(ソース)
34 溝
35 ゲート絶縁膜
36 ゲート電極
37 サイドウォールスペーサ
38 窒化シリコン膜
39 酸化シリコン膜
41 ソース電極
42 ゲート引き出し電極
43 バリアメタル膜
44 Al合金膜
45 接続孔
46 表面保護膜
LF リードフレーム
La、Lb 段差
Claims (11)
- 半導体チップの主面に形成されたパッドに第1膜厚であって、その幅方向に第1端辺及び第2端辺を有する金属リボンをボンディングする工程を含む半導体装置の製造方法において、
前記ボンディング工程で用いるウェッジツールは、前記半導体チップに前記金属リボンを圧着する圧着面を有し、前記圧着面は、その先端を基準面とする凸部と、前記基準面に対して第1段差を有する第1凹部と、前記基準面に対して第2段差を有する第2凹部とを有し、
前記金属リボンの前記幅方向において、前記ウェッジツールの前記第1凹部は、前記圧着面の両端部に位置し、前記第2凹部は、前記凸部を介在させて前記第1凹部よりも内側に位置し、
前記第1凹部の前記第1段差は、前記第2凹部の前記第2段差よりも大きい、半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記ボンディング工程において、前記ウェッジツールの前記圧着面の前記両端部の前記第1凹部は、前記金属リボンの前記第1端辺及び前記第2端辺と重なる位置にある、半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法において、
前記ボンディング工程の後、前記金属リボンは、前記ウェッジツールの前記第1凹部により形成された第1厚膜部と、前記第2凹部により形成された第2厚膜部と、を有し、
前記第1厚膜部の厚さは、前記第2厚膜部の厚さより厚くなっている、半導体装置の製造方法。 - 請求項3に記載の半導体装置の製造方法において、
前記金属リボンの前記幅方向において、前記金属リボンは、前記第1厚膜部と前記第2厚膜部との間に前記ウェッジツールの前記凸部により形成された薄膜部を有し、
前記薄膜部の厚さは、前記第1厚膜部および前記第2厚膜部の厚さよりも薄い、半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記ウェッジツールの前記第1段差は、前記金属リボンの前記第1膜厚よりも大きい、半導体装置の製造方法。 - 請求項5に記載の半導体装置の製造方法において、
前記金属リボンの前記第1膜厚は、0.1mm以下である、半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記半導体チップの前記主面の前記パッドは、第1パッドと第2パッドとを有し、
前記ボンディング工程は、前記第1パッドに前記金属リボンをボンディングする第1ボンディング工程と、前記第1ボンディング工程の後、前記第2パッドに前記金属リボンをボンディングする第2ボンディング工程と、を含む、半導体装置の製造方法。 - 請求項7に記載の半導体装置の製造方法において、
前記第1ボンディング工程の後、前記第2ボンディング工程の前に、前記ウェッジツールを前記半導体チップの前記第2パッド上に移動させながら、前記第1パッドおよび前記第2パッドの間の領域において、前記金属リボンにループを形成する工程を含む、半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法において、
前記ボンディング工程の後、前記半導体チップと前記金属リボンとを封止樹脂により封止する封止工程を有し、
前記封止工程は、前記金属リボンの前記ループと前記半導体チップの前記主面との間に前記封止樹脂を充填するように行う、半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記半導体チップの前記主面の前記パッドは、第1パッド及び前記第1パッドとは異なる第3パッドを有し、
前記ボンディング工程において、前記第1パッドに前記金属リボンを接着した後に、前記第3パッドに金属ワイヤを接続する工程を有する、半導体装置の製造方法。 - 請求項10に記載の半導体装置の製造方法において、
前記半導体チップは、前記主面にソース電極及びゲート電極を有するパワーMOSFETを含み、
前記第1パッドは、前記パワーMOSFETの前記ソース電極と電気的に接続され、前記第3パッドは、前記パワーMOSFETの前記ゲート電極と電気的に接続されている、半導体装置の製造方法。
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