KR20170086828A - 메탈범프를 이용한 클립 본딩 반도체 칩 패키지 - Google Patents

메탈범프를 이용한 클립 본딩 반도체 칩 패키지 Download PDF

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Publication number
KR20170086828A
KR20170086828A KR1020160006330A KR20160006330A KR20170086828A KR 20170086828 A KR20170086828 A KR 20170086828A KR 1020160006330 A KR1020160006330 A KR 1020160006330A KR 20160006330 A KR20160006330 A KR 20160006330A KR 20170086828 A KR20170086828 A KR 20170086828A
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South Korea
Prior art keywords
clip
semiconductor chip
lead frame
bonding
bonding pad
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KR1020160006330A
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English (en)
Inventor
최윤화
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제엠제코(주)
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Application filed by 제엠제코(주) filed Critical 제엠제코(주)
Priority to KR1020160006330A priority Critical patent/KR20170086828A/ko
Priority to US15/407,198 priority patent/US20170207150A1/en
Publication of KR20170086828A publication Critical patent/KR20170086828A/ko
Priority to US15/958,581 priority patent/US10256207B2/en

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Abstract

본 발명은 클립 본딩 반도체 칩 패키지 및 그 제조 방법에 관한 것으로, 보다 상세하게는, 반도체 칩과 기판 또는 리드프레임을 클립에 의해 전기적으로 연결하되, 반도체 칩의 본딩패드 표면에 별도의 메탈층을 형성하지 않고 메탈범프를 이용하여 클립을 본딩패드 표면에 직접 부착하여 제조되는 반도체 칩 패키지 및 그 제조 방법에 관한 것이다. 본 발명에 따르면 반도체 패키지를 구성하는 반도체 칩과 클립의 연결시, 반도체 칩 상의 본딩패드에 메탈범프를 형성하여 솔더링 함으로, 본딩패드 상에 별도의 메탈층을 형성하지 않고 클립을 반도체 칩에 부착할 수 있어, 제조 공정이 단순하고 용이하여 생산 효율을 높이고 제조 단가를 절감할 수 있다는 장점을 갖는다.

Description

메탈범프를 이용한 클립 본딩 반도체 칩 패키지 및 그 제조 방법{Clip -bonded semiconductor chip package using metal bump and the manufacturing method thereof}
본 발명은 클립 본딩 반도체 칩 패키지 및 그 제조 방법에 관한 것으로, 보다 상세하게는, 반도체 칩과 기판 또는 리드프레임을 클립에 의해 전기적으로 연결하되, 반도체 칩의 본딩패드 표면에 별도의 메탈층을 형성하지 않고 메탈범프를 이용하여 클립을 본딩패드 표면에 직접 부착하여 제조되는 반도체 칩 패키지 및 그 제조 방법에 관한 것이다.
일반적으로 반도체 칩 패키지는 반도체 칩(혹은 다이), 리드프레임 및 케이스 바디를 포함하여 구성되며, 반도체 칩은 리드프레임 패드 상에 부착되고, 리드프레임의 리드와는 본딩 와이어에 의하여 전기적으로 연결된다.
한편, 여러 반도체 칩 패키지 중 IGBT나 파워모스펫(Power MOSFET) 등과 같은 전력용 반도체 소자를 구현한 반도체 패키지는 작은 스위칭 손실과 도통 손실 및 낮은 소스-드레인간 온 저항(RdsON)이 요구된다.
따라서, 최근에는 상기한 전력용 반도체 소자를 구현한 반도체 패키지와 같이 고전압 대전류 디바이스용 반도체칩 패키지의 경우에는 본딩 와이어 대신 반도체용 도전성 클립(clip)이 사용되고 있다.
예컨대, 도 1 에 도시된 바와 같이 종래의 클립 본딩 반도체 칩 패키지는 리드프레임 패드(10) 위에 반도체 칩(20)을 실장하고, 반도체 칩(20)과 기판에 형성된 리드(30)를 클립(40)으로 본딩한다. 클립의 본딩이 완료되면 주변을 EMC(Epoxy molding compoind)와 같은 열경화성 소재의 몰딩재로 몰딩하여 패키지 바디(50)를 형성함에 따라 반도체 칩 패키지 제작이 완료된다. 이와 같이 반도체 칩과 리드를 클립에 의해 연결하는 경우 전기적 특성 열화를 줄이고 많은 수의 본딩 와이어를 사용하지 않으므로 제조공정을 쉽게 한다.
한편, 상기 반도체 칩(20)과 클립(40)의 본딩을 위하여, 상기 반도체 칩(20) 상에는 본딩패드가 형성된다. 상기 본딩패드는 반도체 칩의 내부 회로와 외부 회로를 연결하는 와이어 또는 클립(40)을 반도체 칩에 부착하기 위해 형성되는 금속 증착 피막으로서, 보통 알루미늄(Al) 재질의 장방형 구조로 구성된다. 그런데, 이러한 본딩패드는 알루미늄으로 구성되기 때문에 솔더링이 되지 않는다. 이에 따라, 클립의 솔더링을 위해서는 본딩패드 상에 Ni/Pd/Au 또는 Ni/Au 와 같은 별도의 메탈층을 형성하는 공정이 수행되어야 하였는바, 이로 인하여 제조 공정이 복잡하고 생산 효율이 떨어지며 제조 단가가 증가하는 단점이 존재하였다.
대한민국 등록특허 제10-1208332호 '반도체 패키지용 클립 구조 및 이를 이용한 반도체 패키지' 대한민국 등록번호 제10-1245383호 '반도체 패키지의 클립 부착 방법 및 이를 이용한 반도체 패키지 제조방법' 대한민국 공개특허 제2011-0094126호 '클립 배선을 가지는 반도체 다이 패키지'
본 발명은 전술한 바와 같은 문제점을 해결하기 위한 것으로, 패키지 모듈을 구성하는 반도체 칩과 클립의 연결시, 반도체 칩의 본딩패드 상에 별도의 메탈층을 형성하는 공정 없이 간단한 방법으로 클립을 본딩패드와 솔더링하여 부착할 수 있는 클립 본딩 반도체 칩 패키지 및 그 제조방법을 제공하는 것을 과제로 한다.
상기한 바와 같은 과제를 해결하기 위한 본 발명의 바람직한 일 실시예에 따른 메탈범프를 이용한 클립 본딩 반도체 패키지는, 리드프레임과; 상기 리드프레임의 패드 상에 접합되고, 상부면에 본딩패드가 형성된 반도체 칩과; 상기 반도체 칩의 본딩패드 상에 돌출 형성되는 메탈범프와; 일단이 상기 메탈범프가 형성된 본딩패드에 전기전도성 접합수단으로 접합되고, 타단은 리드프레임의 리드에 접합되는 클립과; 상기 리드프레임, 반도체 칩 및 클립 주변에 몰딩재가 충진되어 형성되는 패키지 바디를 포함한다.
여기서, 상기 메탈범프는 구리 또는 골드 재질로 구성되는 것이 바람직하다.
그리고, 상기 전기전도성 접합수단은 솔더 또는 전기 전도성을 갖는 에폭시계 접착재인 것이 바람직하다.
또한, 상기 리드프레임의 리드에 접합되는 클립의 타단은 하향 경사지게 절곡된 다운셋 부분을 포함하며, 상기 클립의 다운셋 말단부는 일측 모서리 부분이 상기 리드프레임의 리드 표면을 대향하도록 배치된 상태로 전기전도성 접합수단에 의해 리드프레임의 리드와 접합되는 것이 바람직하다.
상기 메탈범프는 반도체 칩의 본딩패드 상에 와이어 용융, 스퍼터링, 전기 도금, 스크린 프린팅 중 어느 하나의 방법에 의해 형성되는 것이 바람직하다.
한편, 상기 클립의 상부면은 패키지 바디의 외측으로 노출되는 것이 바람직하다. 그리고, 상기 클립의 상부면에는 방열 슬러그가 접합되는 것이 바람직하다. 여기서, 상기 방열 슬러그는 상부 표면이 패키지 바디의 외측으로 노출되는 것이 바람직하다.
본 발명의 바람직한 다른 실시예에 따른 메탈범프를 이용한 클립 본딩 반도체 칩 패키지는, 리드프레임과; 상기 리드프레임의 패드 상에 접합되고, 상부면에 제1본딩패드가 형성된 제1반도체 칩과; 상기 제1반도체 칩의 제1본딩패드 상에 돌출 형성되는 제1메탈범프와; 일단이 상기 제1메탈범프가 형성된 제1본딩패드에 전기전도성 접합수단으로 접합되고, 타단은 리드프레임의 제1리드에 접합되는 제1클립과; 상기 제1클립의 상층에 접착되고, 상부면에 제2본딩패드가 형성된 제2반도체 칩과; 상기 제2반도체 칩의 제2본딩패드 상에 돌출 형성되는 제2메탈범프와; 일단이 상기 제2메탈범프가 형성된 제2본딩패드에 전기전도성 접합수단으로 접합되고, 타단은 리드프레임의 제2리드에 접합되는 제2클립과; 상기 리드프레임, 제1반도체 칩, 제2반도체 칩 및 제1클립 및 제2클립 주변에 몰딩재가 충진되어 형성되는 패키지 바디를 포함한다.
그리고, 본 발명에 따른 메탈범프를 이용한 클립 본딩 반도체 칩 패키지 제조 방법은, 리드프레임의 패드 상에 반도체 칩을 접합하는 단계와; 상기 반도체 칩 상에 미리 형성된 본딩패드 표면에 메탈범프를 형성하는 단계와; 상기 메탈범프가 형성된 본딩패드에 전기전도성 접합수단으로 클립의 일단을 접합하는 단계와; 상기 클립의 타단을 리드프레임의 리드에 접합하는 단계와; 상기 리드프레임과 반도체 칩 및 클립 주변에 몰딩재를 충진하여 패키지 바디를 형성하는 단계를 포함한다.
상기한 바와 같은 본 발명에 따르면 반도체 패키지를 구성하는 반도체 칩과 클립의 연결시, 반도체 칩 상의 본딩패드에 메탈범프를 형성하여 솔더링 함으로, 본딩패드 상에 별도의 메탈층을 형성하지 않고 클립을 반도체 칩에 부착할 수 있어, 제조 공정이 단순하고 용이하여 생산 효율을 높이고 제조 단가를 절감할 수 있다는 장점을 갖는다.
도 1 은 종래 기술에 따른 클립 본딩 반도체 칩 패키지의 단면도,
도 2 는 본 발명의 바람직한 제1실시예에 따른 클립 본딩 반도체 칩 패키지의 단면도,
도 3 은 본 발명에 따른 클립 본딩 반도체 칩 패키지의 클립 다운셋 말단부와 리드프레임 리드간 결합 상태도,
도 4 은 본 발명의 바람직한 제2실시예에 따른 클립 본딩 반도체 칩 패키지의 단면도,
도 5 는 본 발명의 바람직한 제3실시예에 따른 클립 본딩 반도체 칩 패키지의 단면도,
도 6 는 본 발명에 따른 클립 본딩 반도체 칩 패키지의 제조 방법의 공정 순서도,
도 7 은 본 발명에 따른 클립 본딩 방도체 칩 패키지 제조시 메탈범프의 형성 공정을 모식적으로 나타낸 도면이다.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예에 따른 클립 본딩 반도체 칩 패키지 및 그 제조방법에 대해 상세히 설명한다.
도 2 에는 본 발명의 바람직한 제1실시예에 따른 클립 본딩 반도체 칩 패키지의 구조가 단면도로 도시된다. 도시된 바와 같이 본 발명에 따른 클립 본딩 반도체 칩 패키지는 리드프레임(120)의 패드(120a) 상에 반도체 칩(130)이 솔더(solder) 또는 에폭시 계열의 전기 전도성 접착제에 의해 접합되고, 상기 반도체 칩(130) 상에는 알루미늄 재질의 본딩패드(130a)가 형성되어 있으며, 상기 본딩패드(130a)에 클립(150)의 일단이 본딩된다. 상기 클립(150)의 타단은 리드프레임(120)의 리드(120b)에 솔더 또는 에폭시 계열의 전기 전도성 접착제에 의해 접합된다. 그리고, 주변부는 EMC 등의 열경화성 몰딩재로 충진되어 패키지 바디(170)를 형성한다.
위에서 이미 언급한 바와 같이, 반도체 칩(130) 상에는 클립(150)의 접합을 위한 본딩패드(130a)가 형성되는데, 상기 본딩패드(130a)는 알루미늄 재질로 구성된다. 알루미늄의 경우 솔더링이 불가능하여 클립(150)과의 솔더링 접합을 위해 본딩패드(130a) 상에 별도의 메탈층을 형성하여야만 했다. 본 발명은 이러한 메탈층 형성 공정을 수행하지 않고 클립(150)을 본딩패드(130a)에 곧바로 솔더링 하기 위하여, 도 2 에 도시된 바와 같이, 상기 반도체 칩(130)의 본딩패드(130a) 상에 메탈범프(140)를 형성한다.
상기 메탈범프(140)는 클립(150)과 반도체 칩(130)의 본딩패드(130a)간 접합을 매개하는 수단으로, 반도체 칩(130)과 클립(150) 사이의 전기 및 열의 전달을 가능하게 한다. 상기 메탈범프(140)는 본딩패드(130a) 상에 접합된 돌출체로서, 구리(Cu) 또는 골드(Au)와 같이 솔더링이 가능한 금속재로 구성되며, 대체로 구형, 타원구형, 또는 원통형 등 다양한 형상으로 구성될 수 있다.
메탈범프(140)가 형성된 본딩패드(130a) 상에는 솔더 또는 전기 전도성을 갖는 에폭시계 접착재(이하, '전기전도성 접합수단(145)')가 도포되고, 상기 전기전도성 접합수단(145) 상층에 클립(150)의 일단이 접합된다. 이에 따라, 상기 클립(150)은 전기전도성 접합수단(145)에 의해 메탈범프(140)와 접착되어 전기적으로 연결되며, 메탈범프(140)도 전기 전도성을 갖는 금속재이므로 반도체 칩(130)의 본딩패드와 전기적으로 연결되어 반도체 칩(130)과 클립(150)이 상호 전기적으로 접속되게 된다.
한편, 상기 클립(150)의 타단은 리드프레임(120)의 리드(120b)와 역시 전기전도성 접합수단(솔더 또는 에폭시계 전기 전도성 접착재;155)에 의해 상호 결합된다. 이를 위해, 상기 클립(150)의 타단은 하향 경사지게 절곡된 다운셋(downset;150a) 부분을 포함하며, 상기 다운셋(150a) 말단부가 리드프레임(120)의 리드(120b)와 결합된다.
이때, 상기 클립(150)의 다운셋(150a) 말단부와 리드프레임(120)의 리드(120b)는 편평한 면이 상호 접합되는 형태, 즉, 면접촉된 상태로 결합될 수도 있으나, 도 2 및 도 3 에 도시된 바와 같이, 클립(150)의 다운셋(150a) 말단부의 일측 모서리 부분이 리드프레임(120)의 리드(120b)의 표면을 대향하도록 배치된 상태로 결합되는 것이 바람직하다. 이는 클립(150)과 리드프레임(120)의 리드(120b)간의 접착성 향상을 위한 것으로, 클립(150)의 다운셋(150a) 말단부 모서리가 리드프레임(120)의 리드(120b)를 대향하도록 배치되는 경우, 클립(150)의 다운셋(150a) 말단부 모서리에 인접한 양측 면과 리드프레임(120)의 리드(120b) 사이에 소정 각도의 공간이 형성되고, 상기 공간에 전기전도성 접합수단(155)이 채워지면서 클립(150)이 고정되는바, 클립(150)과 전기전도성 접합수단(155)의 접촉면적이 커질뿐만 아니라, 전기전도성 접합수단(155)이 경화되면서 클립(150)을 모서리 양측에서 견고하게 잡아주면서 지지하게 되므로 클립(150)과 리드프레임(120)의 리드(120b)간 접합성이 향상된다.
상기 클립(150)의 다운셋(150a) 말단부 모서리는 도 3 의 (a)에 도시된 바와 같이 끝이 뾰족한 모양으로 구성될 수도 있고, 도 3 의 (b)에 도시된 바와 같이, 끝이 뭉툭한 모양으로 구성될 수도 있다. 또한, 상기 클립(150)의 다운셋(150a) 말단부 모서리 인접 측면과 리프프레임의 리드(120b)간의 각도(θ)는 30 내지 90°정도로 형성되는 것이 바람직하다.
한편, 도 2 에 도시된 바와 같이, 반도체 칩(130) 상의 또 다른 본딩패드는 리드프레임의 다른 리드와 와이어(BW)에 의해 연결될 수도 있고, 또 다른 클립에 의해 연결될 수도 있다.
또한, 도 2에 도시되고 위에서 이미 언급한 바와 같이, 반도체 칩(130)과 리드프레임(120)의 리드(120b)에 클립(150)이 접합된 후 그 주변부는 EMC와 같은 몰딩재로 밀봉되는데, 이 경우, 도 2 의 (a)에 도시된 바와 같이, 클립(150)이 몰딩재에 의해 둘러싸여 외부에 노출되지 않는 형태로 구성될 수도 있고, 반도체 칩(130) 및 클립(150)에서 발생하는 열을 외부로 배출하기 위하여 도 2 의 (b)에 도시된 바와 같이, 상기 클립(150)의 상부면이 몰딩재가 충진되어 형성되는 패키지 바디(170) 외측으로 노출되게 구성될 수도 있다.
도 4 에는 본 발명의 바람직한 제2실시예에 따른 클립 본딩 반도체 칩 패키지의 구조가 단면도로 도시된다. 도시된 바와 같이, 본 실시예에서도 반도체 칩(130)의 본딩패드 상에 메탈범프(140)가 형성되고, 전기 전기전도성 접합수단(145)에 의해 클립(150)이 접합된다. 이에 더하여, 상기 클립(150)의 상부면에는 반도체 칩(130) 및 클립(150)으로부터 발생하는 열을 외부로 배출하는 방열 슬러그(160)가 접합된다. 상기 방열 슬러그(160)는 열전도성이 우수한 금속 재질로 구성된 사각형의 판 형상으로 구성되며, 전기전도성 접착재 또는 초음파 융착 등의 방법으로 클립(150)에 접합되며, 상부 표면이 상기 패키지 바디(170)의 외측으로 노출되도록 배치된다.
도 5 에는 본 발명의 바람직한 제3실시예에 따른 클립 본딩 반도체 칩 패키지의 구조가 단면도로 도시된다. 도시된 바와 같이, 본 실시예에서는 2개의 반도체 칩이 상하로 적층 배치되고, 각 반도체 칩의 본딩패드에 클립이 각각 메탈범프 및 전기전도성 접합수단을 매개로 접합된다.
보다 구체적으로, 도 5 에 도시된 바와 같이, 리드프레임(120)의 패드(120a) 위에는 제1반도체 칩(130')이 접착재(AD')에 의해 접합되고, 상기 제1반도체 칩(130') 상의 제1본딩패드(130a') 위에는 제1메탈범프(140')가 형성된다. 그리고, 제1메탈범프(140')가 형성된 제1본딩패드(130a')에는 제1전기전도성 접합수단(145')이 도포되고 그 위에 제1클립(150')이 접합된다. 그 다음, 상기 제1클립(150')의 상층에는 접착재(AD")에 의해 제2반도체 칩(130")이 접합되고, 상기 제2반도체 칩(130") 상의 제2본딩패드(130a") 위에 제2메탈범프(140")가 형성된다. 그리고, 상기 제2메탈범프(140")가 형성된 제2본딩패드(130a")에 제2전기전도성 접합수단(145")이 도포되고 그 위에 제2클립(150")이 접합된다. 한편, 상기 제1클립(150')과 제2클립(150")의 타단은 각각 리드프레임(120)의 좌우에 구비된 제1리드(120b')와 제2리드(120b")에 전기전도성 접합수단(155',155")으로 접합된다. 본 실시예에서도, 도 5 의 (a)와 같이, 상기 제2클립(150")이 패키지 바디(170) 내부에 밀봉되도록 구성될 수도 있고, 도 5 의 (b)에 도시된 바와 같이, 외부로 열을 배출하기 위하여 제2클립(150")의 상부면이 패키지 바디(170) 외측으로 노출되도록 구성될 수도 있다.
지금까지 본 발명에 따른 메탈범프를 이용한 클립 본딩 반도체 패키지의 구조에 대하여 설명하였다. 이하에서는, 도 6을 참조로 본 발명에 따른 메탈범프를 이용한 클립 본딩 반도체 패키지의 제조 방법에 대하여 설명한다. 도 6 에는 본 발명에 따른 반도체 패키지의 제조 공정 순서도가 도시된다.
도 6 에 도시된 바와 같이 본 발명에 따른 메탈범프를 이용한 클립 본딩 반도체 칩 패키지 제조방법은 반도체 칩 접합 단계(S100), 메탈범프 형성 단계계(S200), 클립 접합 단계(S300), 클립과 리드프레임(120)의 리드(120b) 접합 단계(S400), 몰딩 단계(S500)를 포함한다.
제1단계로서 반도체 칩 접합 단계(S100)에서는 준비된 리드프레임(120)의 패드(120a) 상에 접착재를 이용하여 반도체 칩(130)을 접합한다. 이때, 상기 반도체 칩(130) 상에는 알루미늄 재질의 본딩패드(130a)가 미리 형성된 상태에 있다. 상기 본딩패드(130a) 표면에는 Ni/Ti/Au 등 별도의 메탈층이 형성되지 않아도 무방하다.
그 다음, 제2단계로서 상기 메탈범프 형성 단계(S200)에서는 반도체 칩(130) 상의 본딩패드(130a) 표면에 구리 또는 골드 등 솔더링 가능한 금속 재질의 메탈범프(140)를 형성한다.
도 7 에는 이러한 메탈범프(140)를 반도체 칩(130) 상의 본딩패드(130a) 표면에 형성하는 방법이 모식적으로 도시된다. 도시된 바와 같이, 메탈범프(140)의 형성은 와이어 용융 방법에 의해 수행될 수 있다. 이는 일반적인 와이어 본딩 방법을 응용하는 방법으로서, 구체적으로, 도 7 에 도시된 바와 같이, 내부에 구리 또는 골드 와이어(W)가 배치된 캐필러리(CP;capillary)를 반도체 칩(130) 상에 형성된 본딩패드(130a) 상측에 소정 간격을 두고 배치한 상태에서, 와이어(W)의 끝단에 작은 전기 스파크를 가해 와이어(W)를 용융시킴에 따라 본딩패드(130a) 표면에 금속 볼(ball)을 형성한다. 그 다음, 캐필러리(CP)를 약간 들어올리면서 금속 볼 상부에 연결되는 와이어(W)를 커터(C)로 커팅한다. 그러면, 금속 볼이 냉각되면서 본딩패드 표면에 견고하게 접합되어 메탈범프(140) 형성이 완료된다.
한편, 상기 메탈범프(140)의 형성은 전기 도금, 스퍼터링(sputtering), 스크린 프린팅(screen printing) 방식을 이용할 수도 있다. 이 경우, 본딩패드(130a) 상의 메탈범프(140)가 형성되지 않는 부분은 마스크(mask)로 가린 후 전기 도금, 스퍼터링, 스크린 프린팅을 수행하여 일정한 모양의 메탈범프(140)를 형성할 수 있다.
반도체 칩(130)의 본딩패드(130a) 상에 메탈범프(140)가 형성된 후에는 제3단계로서 클립 접합 단계(S300)를 수행한다. 본 단계에서는 메탈범프(140)가 형성된 본딩패드(130a)에 전기전도성 접합수단(145)을 도포하고, 그 위에 클립(150)을 접합한다.
그 다음, 제4단계로서 클립(150)과 리드프레임(120) 리드(120b)를 상호 접합(S400)한다. 본 단계에서는 상기 클립(150)의 타단, 구체적으로, 클립(150)의 다운셋(150a) 말단부를 리드프레임(120)의 리드(120b)에 전기전도성 접합수단(155)으로 접합한다. 이때, 상술한 바와 같이 접착성 향상을 위해 상기 클립(150)의 다운셋(150a) 말단부 모서리가 리드프레임(120)의 리드(120b) 표면에 대항하도록 배치된 상태로 접합되는 것이 바람직하다.
그 다음 제5단계로서 몰딩 단계(S160)에서는 리드프레임(120)과 반도체 칩(130), 그리고 클립(150) 주변에 EMC와 같은 열경화성 몰딩재를 충진하여 패키지 바디(170)를 형성한다. 이에 따라, 도 2 에 도시된 바와 같은 반도체 칩 패키지가 완성된다.
이상, 본 발명의 특정 실시예에 대하여 상술하였다. 그러나, 본 발명의 사상 및 범위는 이러한 특정 실시예에 한정되는 것이 아니라, 본 발명의 요지를 변경하지 않는 범위 내에서 다양하게 수정 및 변형이 가능하다는 것을 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 이해할 것이다. 따라서, 이상에서 기술한 실시예들은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이므로, 모든 면에서 예시적인 것이며 한정적이 아닌 것으로 이해해야만 하며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다.
120 : 리드프레임 120a : 패드
120b : 리드 130 : 반도체 칩
130a : 본딩패드 140 : 메탈범프
145 : 전기전도성 접합수단 150 : 클립
150a : 다운셋 155 : 전기전도성 접합수단
170 : 패키지 바디

Claims (15)

  1. 리드프레임과;
    상기 리드프레임의 패드 상에 접합되고, 상부면에 본딩패드가 형성된 반도체 칩과;
    상기 반도체 칩의 본딩패드 상에 돌출 형성되는 메탈범프와;
    일단이 상기 메탈범프가 형성된 본딩패드에 전기전도성 접합수단으로 접합되고, 타단은 리드프레임의 리드에 접합되는 클립과;
    상기 리드프레임, 반도체 칩 및 클립 주변에 몰딩재가 충진되어 형성되는 패키지 바디를 포함하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  2. 제 1 항에 있어서,
    상기 메탈범프는 구리 또는 골드 재질로 구성되는 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  3. 제 1 항 또는 제 2 항에 있어서,
    상기 전기전도성 접합수단은 솔더 또는 전기 전도성을 갖는 에폭시계 접착재인 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  4. 제 1 항 또는 제 2 항에 있어서,
    상기 리드프레임의 리드에 접합되는 클립의 타단은 하향 경사지게 절곡된 다운셋 부분을 포함하며, 상기 클립의 다운셋 말단부는 일측 모서리 부분이 상기 리드프레임의 리드 표면을 대향하도록 배치된 상태로 전기전도성 접합수단에 의해 리드프레임의 리드와 접합되는 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  5. 제 1 항 또는 제 2 항에 있어서,
    상기 메탈범프는 반도체 칩의 본딩패드 상에 와이어 용융, 스퍼터링, 전기 도금, 스크린 프린팅 중 어느 하나의 방법에 의해 형성되는 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  6. 제 1 항 또는 제 2 항에 있어서,
    상기 클립의 상부면은 패키지 바디의 외측으로 노출되는 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  7. 제 1 항 또는 제 2 항에 있어서,
    상기 클립의 상부면에는 방열 슬러그가 접합되는 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  8. 제 7 항에 있어서,
    상기 방열 슬러그는 상부 표면이 패키지 바디의 외측으로 노출되는 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  9. 리드프레임과;
    상기 리드프레임의 패드 상에 접합되고, 상부면에 제1본딩패드가 형성된 제1반도체 칩과;
    상기 제1반도체 칩의 제1본딩패드 상에 돌출 형성되는 제1메탈범프와;
    일단이 상기 제1메탈범프가 형성된 제1본딩패드에 전기전도성 접합수단으로 접합되고, 타단은 리드프레임의 제1리드에 접합되는 제1클립과;
    상기 제1클립의 상층에 접착되고, 상부면에 제2본딩패드가 형성된 제2반도체 칩과;
    상기 제2반도체 칩의 제2본딩패드 상에 돌출 형성되는 제2메탈범프와;
    일단이 상기 제2메탈범프가 형성된 제2본딩패드에 전기전도성 접합수단으로 접합되고, 타단은 리드프레임의 제2리드에 접합되는 제2클립과;
    상기 리드프레임, 제1반도체 칩, 제2반도체 칩 및 제1클립 및 제2클립 주변에 몰딩재가 충진되어 형성되는 패키지 바디를 포함하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  10. 제 9 항에 있어서,
    상기 메탈범프는 구리 또는 골드 재질로 구성되는 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  11. 제 9 항 또는 제 10 항에 있어서,
    상기 전기전도성 접합수단은 솔더 또는 전기 전도성을 갖는 에폭시계 접착재인 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
  12. 리드프레임의 패드 상에 반도체 칩을 접합하는 단계와;
    상기 반도체 칩 상에 미리 형성된 본딩패드 표면에 메탈범프를 형성하는 단계와;
    상기 메탈범프가 형성된 본딩패드에 전기전도성 접합수단으로 클립의 일단을 접합하는 단계와;
    상기 클립의 타단을 리드프레임의 리드에 접합하는 단계와;
    상기 리드프레임과 반도체 칩 및 클립 주변에 몰딩재를 충진하여 패키지 바디를 형성하는 단계를 포함하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지 제조 방법.
  13. 제 12 항에 있어서,
    상기 메탈범프는 구리 또는 골드 재질로 구성되는 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지 제조 방법.
  14. 제 12 항 또는 제 13 항에 있어서,
    상기 전기전도성 접합수단은 솔더 또는 전기 전도성을 갖는 에폭시계 접착재인 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지 제조 방법.
  15. 제 12 항 또는 제 13 항에 있어서,
    상기 메탈범프는 반도체 칩의 본딩패드 상에 와이어 용융, 스퍼터링, 전기 도금, 스크린 프린팅 중 어느 하나의 방법에 의해 형성되는 것을 특징으로 하는 메탈범프를 이용한 클립 본딩 반도체 칩 패키지.
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