JP2010251374A5 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2010251374A5
JP2010251374A5 JP2009096165A JP2009096165A JP2010251374A5 JP 2010251374 A5 JP2010251374 A5 JP 2010251374A5 JP 2009096165 A JP2009096165 A JP 2009096165A JP 2009096165 A JP2009096165 A JP 2009096165A JP 2010251374 A5 JP2010251374 A5 JP 2010251374A5
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Prior art keywords
semiconductor device
device manufacturing
manufacturing
recess
bonding
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JP2009096165A
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JP5271778B2 (ja
JP2010251374A (ja
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Priority to US12/756,208 priority patent/US8253247B2/en
Publication of JP2010251374A publication Critical patent/JP2010251374A/ja
Publication of JP2010251374A5 publication Critical patent/JP2010251374A5/ja
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Claims (1)

  1. 半導体チップの主面に形成されたパッドに金属リボンをボンディングする工程を含む半導体装置の製造方法において、
    前記ボンディング工程で用いるウェッジツールは、前記金属リボンの幅方向の両端部に対向する圧着面の両端部に設けられた第１凹部と、前記圧着面の前記両端部よりも内側に設けられた第２凹部と、を有し、
    前記第１凹部の段差量は、前記第２凹部の段差量よりも大きいことを特徴とする半導体装置の製造方法。
JP2009096165A 2009-04-10 2009-04-10 半導体装置の製造方法 Expired - Fee Related JP5271778B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009096165A JP5271778B2 (ja) 2009-04-10 2009-04-10 半導体装置の製造方法
US12/756,208 US8253247B2 (en) 2009-04-10 2010-04-08 Semiconductor device and method for manufacturing the same

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Application Number Priority Date Filing Date Title
JP2009096165A JP5271778B2 (ja) 2009-04-10 2009-04-10 半導体装置の製造方法

Related Child Applications (1)

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JP2013034315A Division JP5512845B2 (ja) 2013-02-25 2013-02-25 半導体装置

Publications (3)

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JP2010251374A JP2010251374A (ja) 2010-11-04
JP2010251374A5 true JP2010251374A5 (ja) 2012-04-05
JP5271778B2 JP5271778B2 (ja) 2013-08-21

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JP2009096165A Expired - Fee Related JP5271778B2 (ja) 2009-04-10 2009-04-10 半導体装置の製造方法

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US (1) US8253247B2 (ja)
JP (1) JP5271778B2 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129467A (ja) * 2010-12-17 2012-07-05 Mitsubishi Electric Corp 半導体装置の製造方法、超音波接合装置、及び半導体装置
JP6496100B2 (ja) * 2013-03-21 2019-04-03 新電元工業株式会社 半導体装置の製造方法
WO2015001676A1 (ja) 2013-07-05 2015-01-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6369325B2 (ja) * 2013-12-25 2018-08-08 三菱マテリアル株式会社 パワーモジュール用基板、およびその製造方法、パワーモジュール
US10256605B2 (en) 2016-10-14 2019-04-09 Waymo Llc GaNFET as energy store for fast laser pulser
JP6663340B2 (ja) * 2016-10-28 2020-03-11 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147345U (ja) * 1986-03-12 1987-09-17
US20040217488A1 (en) 2003-05-02 2004-11-04 Luechinger Christoph B. Ribbon bonding
JP4586508B2 (ja) 2004-10-06 2010-11-24 富士電機システムズ株式会社 半導体装置およびその製造方法
JP4047349B2 (ja) 2004-11-09 2008-02-13 株式会社東芝 半導体装置製造用超音波接合装置、半導体装置、及び製造方法
JP4526957B2 (ja) * 2005-01-13 2010-08-18 ルネサスエレクトロニクス株式会社 半導体装置、ボンディング方法およびボンディングリボン
US20060163315A1 (en) 2005-01-27 2006-07-27 Delsman Mark A Ribbon bonding tool and process
JP2008294384A (ja) * 2007-04-27 2008-12-04 Renesas Technology Corp 半導体装置

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