JP2011114137A - 電力用半導体装置 - Google Patents
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Abstract
【解決手段】電極面3sが形成された半導体素子3と、半導体素子3から離れて配置された端子8と、断面が扁平のリボン材からなり、長さ方向の両端部1jA、1jBにおける幅広の面がそれぞれ半導体素子3の電極面3sと端子8とに接合され、半導体素子3と端子8とを電気的に接続するリボンボンド1と、を備え、リボンボンド1は、半導体素子3の電極面3sと端子8の接合部とを結ぶ直線PA−PBに垂直で電極面3sに平行な方向(=y方向)の曲げ応力に対し、当該リボン材の扁平方向に対する曲げ剛性よりも曲げ剛性の低い変形部1Dを有するように構成した。
【選択図】図1
Description
図1は、本発明の実施の形態1にかかる電力用半導体装置の構成を説明するためのもので、図1(a)は電力用半導体装置のうち、一つの半導体素子と当該半導体素子と電気接続される端子の周辺部として破線に示す四角部分を抜き出した上面図、図1(b)は図1(a)におけるIb−Ib線による切断面を示す断面図、図1(c)は図1(a)におけるIc−Ic線による切断面を示す部分断面図である。
本実施の形態1にかかる電力用半導体装置を駆動させると、半導体素子3、金属電極5c1、端子8およびリボンボンド1に電流が流れ、電気抵抗分の電力ロスが熱へと変換され、電力用半導体装置全体の温度が変動する。電力用半導体装置内では、端子8は半導体素子3から離れた位置に半導体素子3に対して固定配置されているが、例えば、本実施の形態でいえば、半導体素子3の電極面3sから端子8までを機械的につなぐ材料(動かないように固定するための材料)は、半導体材料(半導体素子3)、導電材料(ダイボンド材4A)、金属(金属電極5c1)、絶縁材(絶縁基板5i)、金属(金属電極5c2)、導電材料(ダイボンド材4B)、金属(ベース板7)、樹脂材料(筺体2)、金属(端子8)というように面方向や厚み方向に線膨張係数の異なる材料が複雑に配置されている。そのため、温度変動した場合に、リボンボンド1の両端部1jA、1jBとそれぞれ接合されている半導体素子3と端子8間において変位が生じる。
本実施の形態2にかかる電力用半導体装置では、実施の形態1に対してリボンボンドの変形部の形成の仕方が異なるものである。他の部分については実施の形態1と同様であるので説明を省略する。図2は、本発明の実施の形態2にかかる電力用半導体装置の構成を説明するためのもので、図2(a)は電力用半導体装置のうち、一つの半導体素子と当該半導体素子と電気接続される端子の周辺部として破線に示す四角部分を抜き出した上面図、図2(b)は図2(a)におけるIIb−IIb線による切断面を示す断面図である。
本実施の形態3にかかる電力用半導体装置では、実施の形態1に対してリボンボンドの変形部の形態が異なるものである。他の部分については実施の形態1と同様であるので説明を省略する。図3は、本発明の実施の形態3にかかる電力用半導体装置の構成を説明するためのもので、図3(a)は電力用半導体装置のうち、一つの半導体素子と当該半導体素子と電気接続される端子の周辺部として破線に示す四角部分を抜き出した上面図、図3(b)は図3(a)におけるIIIb−IIIb線による切断面を示す断面図である。
本実施の形態4にかかる電力用半導体装置では、実施の形態1に対してリボンボンドの両端部で接合面を変え、変形部を構成したものである。他の部分については実施の形態1と同様であるので説明を省略する。図4は、本発明の実施の形態4にかかる電力用半導体装置の構成を説明するためのもので、図4(a)は電力用半導体装置のうち、一つの半導体素子と当該半導体素子と電気接続される端子の周辺部として破線に示す四角部分を抜き出した上面図、図4(b)は図4(a)におけるIVb−IVb線による切断面を示す断面図である。
本実施の形態5にかかる電力用半導体装置では、実施の形態1に対して接合対象である端子の接続部の方向を傾けることで、リボンボンドに変形部を形成するものである。他の部分については実施の形態1と同様であるので説明を省略する。図5は、本発明の実施の形態5にかかる電力用半導体装置の構成を説明するためのもので、図5(a)は電力用半導体装置のうち、一つの半導体素子と当該半導体素子と電気接続される端子の周辺部として破線に示す四角部分を抜き出した上面図、図5(b)は図5(a)におけるVb−Vb線による切断面を示す断面図である。
DA、DB 端部における長さ方向の向き、 t リボン厚み、 W リボン幅、 θD 電極面に対する扁平方向の傾き、 θA、θB 接合部を結ぶ直線に対する長さ方向の傾き。
100位の数字は変形例を示す。
Claims (6)
- 電極面が形成された半導体素子と、
前記半導体素子から離れて配置された端子と、
断面が扁平のリボン材からなり、長さ方向の両端部における幅広の面がそれぞれ前記半導体素子の電極面と前記端子とに接合されたリボンボンドと、を備え、
前記リボンボンドは、前記半導体素子の電極面と前記端子の接合部とを結ぶ直線に垂直で前記電極面に平行な方向の曲げ応力に対し、当該リボン材の断面の扁平方向に対する曲げ剛性よりも曲げ剛性の低い変形部を有することを特徴とする電力用半導体装置。 - 前記リボンボンドの変形部では、当該リボン材の断面の扁平方向が前記電極面に対して傾いていることを特徴とする請求項1に記載の電力用半導体装置。
- 前記リボンボンドの変形部では、当該リボン材を長さ方向に回転させていることを特徴とする請求項1に記載の電力用半導体装置。
- 前記リボンボンドの両端部では、当該リボン材の長さ方向が、前記電極面に平行な面内において前記直線に対して傾いていることを特徴とする請求項1ないし3のいずれか1項に記載の電力用半導体装置。
- 前記リボンボンドは、前記半導体素子の電極面と接合される面と異なる面が前記端子に接合されていることを特徴とする請求項1ないし4のいずれか1項に記載の電力用半導体装置。
- 前記端子は、前記リボンボンドとの接合部が前記直線を軸に前記電極面に対して傾いて形成されていることを特徴とする請求項1ないし5のいずれか1項に記載の電力用半導体装置。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012053129A1 (ja) * | 2010-10-18 | 2012-04-26 | パナソニック株式会社 | 半導体装置及びその製造方法 |
DE112016007432T5 (de) | 2016-11-11 | 2019-07-25 | Mitsubishi Electric Corporation | Halbleitervorrichtung, Invertereinheit und Automobil |
CN110574159A (zh) * | 2017-05-11 | 2019-12-13 | 三菱电机株式会社 | 功率模块、电力变换装置以及功率模块的制造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5694755A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Semiconductor device |
JPS61148855A (ja) * | 1984-12-24 | 1986-07-07 | Hitachi Ltd | 半導体装置 |
-
2009
- 2009-11-26 JP JP2009268773A patent/JP5204744B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5694755A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Semiconductor device |
JPS61148855A (ja) * | 1984-12-24 | 1986-07-07 | Hitachi Ltd | 半導体装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012053129A1 (ja) * | 2010-10-18 | 2012-04-26 | パナソニック株式会社 | 半導体装置及びその製造方法 |
DE112016007432T5 (de) | 2016-11-11 | 2019-07-25 | Mitsubishi Electric Corporation | Halbleitervorrichtung, Invertereinheit und Automobil |
US10770376B2 (en) | 2016-11-11 | 2020-09-08 | Mitsubishi Electric Corporation | Semiconductor device, inverter unit and automobile |
DE112016007432B4 (de) | 2016-11-11 | 2023-06-22 | Mitsubishi Electric Corporation | Halbleitervorrichtung, Invertereinheit und Automobil |
CN110574159A (zh) * | 2017-05-11 | 2019-12-13 | 三菱电机株式会社 | 功率模块、电力变换装置以及功率模块的制造方法 |
US10978366B2 (en) | 2017-05-11 | 2021-04-13 | Mitsubishi Electric Corporation | Power module having a hole in a lead frame for improved adhesion with a sealing resin, electric power conversion device, and method for producing power module |
CN110574159B (zh) * | 2017-05-11 | 2023-04-04 | 三菱电机株式会社 | 功率模块、电力变换装置以及功率模块的制造方法 |
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