JP6999807B2 - 半導体装置及び電力変換装置 - Google Patents
半導体装置及び電力変換装置 Download PDFInfo
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- JP6999807B2 JP6999807B2 JP2020523508A JP2020523508A JP6999807B2 JP 6999807 B2 JP6999807 B2 JP 6999807B2 JP 2020523508 A JP2020523508 A JP 2020523508A JP 2020523508 A JP2020523508 A JP 2020523508A JP 6999807 B2 JP6999807 B2 JP 6999807B2
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- filling member
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Description
図1は、この発明の実施の形態1における半導体装置を示す平面構造模式図である。図2は、この発明の実施の形態1における半導体装置を示す断面構造模式図である。図1中の一点鎖線AAにおける断面構造模式図が図2である。図において、半導体装置100は、ベース板1、ケース部材2、絶縁基板6、半導体素子7、接合材8、ボンディングワイヤ9、充填部材10、金属部材である電極端子11を備えている。
本実施の形態2においては、実施の形態1で用いた電極端子11の充填部材10内における曲がり方が、電極端子11の一端と電極端子11の他端とを結ぶ方向を横切る方向の断面において、充填部材10の上面側へ傾斜した点が異なる。このように、電極端子11の一端と電極端子11の他端とを結ぶ方向を横切る方向の断面において、充填部材10の上面側へ曲がったので、充填部材10内の電極端子11の下面側に気泡が残留せず、充填部材10と電極端子11との剥離を抑制できる。その結果、半導体装置300の絶縁不良を抑制でき、半導体装置300の信頼性を向上させることができる。また、気泡が移動する電極端子11の傾斜部11dの曲がった面(斜面)の距離を短くできるので、短時間で気泡を電極端子11の下部から移動することができる。なお、その他の点については、実施の形態1と同様であるので、詳しい説明は省略する。
本実施の形態3においては、実施の形態1で用いた電極端子11の平面視において、電極端子11を貫通する貫通穴11hを設けた点が異なる。このように、電極端子11に平面視において、金属部材11を貫通する貫通穴11hを形成したので、電極端子11の下面側の気泡が電極端子11の傾斜部11dに沿って上昇する途中で貫通穴11hを通って電極端子11の上方に抜けることができるため、より早く充填部材10内の気泡が充填部材10の外に排出することができる。その結果、半導体装置400の絶縁不良を抑制でき、半導体装置400の信頼性を向上させることができる。なお、その他の点については、実施の形態1と同様であるので、詳しい説明は省略する。
本実施の形態4は、上述した実施の形態1から3にかかる半導体装置を電力変換装置に適用したものである。本発明は特定の電力変換装置に限定されるものではないが、以下、実施の形態4として、三相のインバータに本発明を適用した場合について説明する。
Claims (14)
- 表面と裏面とを有し、前記表面に半導体素子が接合された絶縁基板と、
前記絶縁基板の前記裏面に接合されたベース板と、
前記絶縁基板を取り囲むケース部材と、
上面を有し、前記絶縁基板を覆い、前記ベース板と前記ケース部材とで囲まれた領域に充填された充填部材と、
前記充填部材内で前記充填部材の前記上面側へ曲がり、一端が前記絶縁基板の前記表面と接合し、他端が前記ケース部材の内壁から離間し、前記充填部材の前記上面から露出し、前記一端には、屈曲して前記絶縁基板の前記表面と接合する接合部を有し、前記他端には、屈曲して外部と接続する端子部を有し、前記一端の屈曲した部分と前記他端の屈曲した部分とを接続する傾斜部を有する板状の金属部材と、
を備えた半導体装置。 - 表面と裏面とを有し、前記表面に半導体素子が接合された絶縁基板と、
前記絶縁基板の前記裏面に接合されたベース板と、
前記絶縁基板を取り囲むケース部材と、
上面を有し、前記絶縁基板を覆い、前記ベース板と前記ケース部材とで囲まれた領域に充填された充填部材と、
前記充填部材内で前記充填部材の前記上面側へ曲がり、一端が前記絶縁基板の前記表面と接合し、他端が前記ケース部材の内壁から離間し、前記充填部材の前記上面から露出し、
前記一端と前記他端とを結ぶ方向を横切る方向の断面において、前記充填部材の前記上面側へ曲がる板状の金属部材と、
を備えた半導体装置。 - 表面と裏面とを有し、前記表面に半導体素子が接合された絶縁基板と、
前記絶縁基板の前記裏面に接合されたベース板と、
前記絶縁基板を取り囲むケース部材と、
上面を有し、前記絶縁基板を覆い、前記ベース板と前記ケース部材とで囲まれた領域に充填された充填部材と、
前記充填部材内で前記充填部材の前記上面側へ曲がり、一端が前記絶縁基板の前記表面と接合し、他端が前記ケース部材の内壁から離間し、前記充填部材の前記上面から露出し、電流が流れるものであり、前記電流の流れる向きを横切る方向の断面において、前記充填部材の前記上面側へ曲がる板状の金属部材と、
を備えた半導体装置。 - 前記金属部材は、前記一端と前記他端とを結ぶ方向の断面において、前記充填部材の前記上面側へ曲がる請求項1に記載の半導体装置。
- 前記金属部材は、前記一端と前記他端とを結ぶ方向を横切る方向の断面において、前記充填部材の前記上面側へ曲がる請求項1に記載の半導体装置。
- 前記金属部材は、前記金属部材に流れる電流の向きと同じ方向の断面において、前記充填部材の前記上面側へ曲がる請求項1に記載の半導体装置。
- 前記金属部材は、前記金属部材に流れる電流の向きを横切る方向の断面において、前記充填部材の前記上面側へ曲がる請求項1に記載の半導体装置。
- 前記金属部材は、前記一端から前記他端へ向かうほど前記充填部材の前記上面との距離が近くなる請求項4または請求項6に記載の半導体装置。
- 前記金属部材の断面形状は、直線状、階段状または前記金属部材の上面側若しくは下面側に凸状の湾曲状で、前記充填部材の前記上面側へ曲がる請求項4から請求項8のいずれか1項に記載の半導体装置。
- 前記金属部材の断面形状は、前記金属部材の下面側に凸状であるV字状またはU字状で、前記充填部材の前記上面側へ曲がる請求項5または請求項7に記載の半導体装置。
- 前記金属部材は、前記一端から前記他端までの間に互いに平行である部位を有する請求項1から請求項10のいずれか1項に記載の半導体装置。
- 前記金属部材は、平面視において、前記金属部材を貫通する貫通穴を有する請求項1から請求項11のいずれか1項に記載の半導体装置。
- 前記金属部材は、前記他端が、前記一端よりも前記ケース部材側である、または、前記一端が、前記他端よりも前記ケース部材側である請求項1から請求項12のいずれか1項に記載の半導体装置。
- 請求項1から請求項13のいずれか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、
を備えた電力変換装置。
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