JP6680419B1 - 半導体装置、半導体装置の製造方法および電力変換装置 - Google Patents
半導体装置、半導体装置の製造方法および電力変換装置 Download PDFInfo
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- JP6680419B1 JP6680419B1 JP2019563303A JP2019563303A JP6680419B1 JP 6680419 B1 JP6680419 B1 JP 6680419B1 JP 2019563303 A JP2019563303 A JP 2019563303A JP 2019563303 A JP2019563303 A JP 2019563303A JP 6680419 B1 JP6680419 B1 JP 6680419B1
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Abstract
Description
層が設けられ、下面側が平坦な絶縁基板と、ベース板の上面と絶縁層の下面側の金属層の
下面とを接合する接合材と、ベース板の上面に配置され、絶縁基板を取り囲むケース部材
と、ベース板とケース部材とで囲まれた領域内に配置され、前記絶縁基板の対向する辺を
跨ぎ、跨いだ前記絶縁基板の対向する辺間にわたり前記絶縁基板の上面に接する押さえ部
材と、を備えた半導体装置である。
図1は、本発明の実施の形態1における半導体装置を示す平面構造模式図である。図2は、本発明の実施の形態1における半導体装置を示す断面構造模式図である。図3は、本発明の実施の形態1における半導体装置を示す他の断面構造模式図である。図1は、半導体装置100を上面から見た平面構造模式図である。図2は、図1の一点鎖線AAにおける断面構造模式図である。図3は、図1の一点鎖線BBにおける断面構造模式図である。
対向している。絶縁基板2は、絶縁層21を有している。絶縁層21は、上面と下面とを
有している。絶縁基板2には、絶縁層21の上面に金属層22、絶縁層21の下面に金属
層23が形成されている。絶縁層21の下面側の金属層23は、絶縁基板下接合材3によ
りベース板1の上面と接合されている。絶縁基板2は板状であり、板状の絶縁基板2を平
面方向から見た場合において、金属層22,23の大きさは、絶縁層21を挟んで、金属
層22が、金属層23およびベース板1との間で沿面放電を抑制(沿面距離を確保)する
ために、絶縁層21の大きさよりも小さくなっている。また、絶縁層21の上面側の金属
層22は、目的に応じて複数に分割され、回路パターンを形成してもよい。絶縁基板2の
絶縁層21の材料としては、酸化アルミニウム(Al2O3)や窒化アルミニウム(Al
N)や窒化珪素(Si3N4)などを用いることができる。絶縁基板2の金属層22,2
3の材料としては、銅合金やアルミニウム合金などを用いることができる。絶縁基板2の
金属層22の上面には、半導体素子7が半導体素子下接合材8で接合されている。
本実施の形態2においては、実施の形態1で用いた押さえ部材6を絶縁層21(絶縁基板2)の対向する辺を跨いで、絶縁基板2の絶縁層21の上面と接して設けたことが異なる。このように、絶縁層21の対向する辺を跨いで絶縁基板2の絶縁層21の上面と接する押さえ部材6を形成したので、絶縁層21全体がベース板1の方向に押圧されることで、絶縁基板下接合材3内部全体に圧縮応力を発生させる。この結果、絶縁基板下接合材3内でのき裂の発生および進展、または絶縁基板下接合材3の剥離が抑制されるので、絶縁基板下接合材3の熱応力による損傷を低減でき、半導体装置の信頼性を向上することができる。なお、その他の点については、実施の形態1と同様であるので、詳しい説明は省略する。
本実施の形態3においては、実施の形態1で用いた押さえ部材6をベース板1の上面から上方へ突出させ、絶縁基板2の上面側へ屈曲して、金属層22の対向する辺を跨いで、絶縁基板2の金属層22の上面と接して設けたことが異なる。このように、ベース板1の上面から上方へ突出させ、絶縁基板2の上面側(上面部方向)へ屈曲して、金属層22の対向する辺を跨いで、絶縁基板2の金属層22の上面と接する押さえ部材6を形成したので、金属層22全体がベース板1の方向に押圧されることで、絶縁基板下接合材3内部全体に圧縮応力を発生させる。この結果、絶縁基板下接合材3内でのき裂の発生および進展、または絶縁基板下接合材3の剥離が抑制されるので、絶縁基板下接合材3の熱応力による損傷を低減でき、半導体装置の信頼性を向上することができる。なお、その他の点については、実施の形態1と同様であるので、詳しい説明は省略する。
本実施の形態4においては、実施の形態3で用いた押さえ部材6が、絶縁基板2の絶縁層21の上面と接して設けたことが異なる。このように、ベース板1の上面から上方へ突出させ、絶縁基板2の上面側へ屈曲して、絶縁層21の対向する辺を跨いで、絶縁基板2の絶縁層21の上面と接する押さえ部材6を設けたので、絶縁層21全体がベース板1の方向に押圧されることで、絶縁基板下接合材3内部全体に圧縮応力を発生させる。この結果、絶縁基板下接合材3内でのき裂の発生および進展、または絶縁基板下接合材3の剥離が抑制されるので、絶縁基板下接合材3の熱応力による損傷を低減でき、半導体装置の信頼性を向上することができる。なお、その他の点については、実施の形態2と同様であるので、詳しい説明は省略する。
本実施の形態5においては、実施の形態1,2,3,4で用いた押さえ部材6の形状を棒状部材から板状部材にしたことが異なる。このように、板状の押さえ部材60を用いた場合においても、絶縁層21または金属層22の対向する辺を跨いで、絶縁基板2の金属層22の上面と接して押さえ部材60を形成したので、金属層22全体がベース板1の方向に押圧されることで、絶縁基板下接合材3内部全体に圧縮応力を発生させる。この結果、絶縁基板下接合材3内でのき裂の発生および進展、または絶縁基板下接合材3の剥離が抑制されるので、絶縁基板下接合材3の熱応力による損傷を低減でき、半導体装置の信頼性を向上することができる。なお、その他の点については、実施の形態1,2,3,4と同様であるので、詳しい説明は省略する。
本実施の形態6は、上述した実施の形態1から5のいずれかに係る半導体装置を電力変換装置に適用したものである。本発明は特定の電力変換装置に限定されるものではないが、以下、実施の形態6として、三相のインバータに本発明を適用した場合について説明する。
Claims (20)
- ベース板と、
絶縁層を有し、前記絶縁層の上面と下面とに金属層が設けられ、下面側が平坦な絶縁基板
と、
前記ベース板の上面と前記絶縁層の下面側の前記金属層の下面とを接合する接合材と、
前記ベース板の上面に配置され、前記絶縁基板を取り囲むケース部材と、
前記ベース板と前記ケース部材とで囲まれた領域内に配置され、前記絶縁基板の対向する
辺を跨ぎ、跨いだ前記絶縁基板の対向する辺間にわたり前記絶縁基板の上面に接する押さ
え部材と、
を備えた半導体装置。 - 前記押さえ部材は、前記ケース部材の内周に接して配置される、請求項1に記載の半導体
装置。 - 前記押さえ部材は、前記ベース板の上面に接する、請求項1に記載の半導体装置。
- 前記押さえ部材は、棒状であり、前記絶縁層の上面側の前記金属層の上面または前記絶縁
層の上面に接する、請求項1から請求項3のいずれか1項に記載の半導体装置。 - 前記絶縁層の上面側の前記金属層の上面には、半導体素子が配置され、前記押さえ部材は
、前記半導体素子が配置された前記絶縁層の上面側の前記金属層の上面に接する、
請求項1から請求項4のいずれか1項に記載の半導体装置。 - 前記押さえ部材は、断面形状が円形または多角形である、請求項1から請求項5のいずれ
か1項に記載の半導体装置。 - 前記押さえ部材は、前記金属層または前記絶縁層の外周部で前記金属層または前記絶縁層
の辺部に沿って配置される、請求項1から請求項6のいずれか1項に記載の半導体装置。 - 前記押さえ部材は、前記絶縁基板の上面を覆う板状部材であり、前記絶縁層の上面側の前
記金属層の上面に接する、請求項1から請求項4のいずれか1項に記載の半導体装置。 - 前記押さえ部材は、複数配置される、請求項1から請求項8のいずれか1項に記載の半導
体装置。 - 前記押さえ部材は、弾性体である、請求項1から請求項9のいずれか1項に記載の半導体
装置。 - 前記押さえ部材は、ばね部材を含む、請求項1から請求項10のいずれか1項に記載の半
導体装置。 - 前記押さえ部材には、貫通穴が形成されている、請求項8に記載の半導体装置。
- 前記ケース部材には、前記押さえ部材を支持する台座部が設けられている、請求項1から
請求項12のいずれか1項に記載の半導体装置。 - 前記ケース部材には、前記押さえ部材を配置するスリット部が設けられている、請求項1
から請求項13のいずれか1項に記載の半導体装置。 - 前記押さえ部材は、前記ケース部材または前記ベース板と一体的に形成されている、請求
項1から請求項14のいずれか1項に記載の半導体装置。 - ベース板を準備するベース板準備工程と、
絶縁層の上面と下面とに金属層が設けられ、下面側が平坦な絶縁基板を準備する絶縁基板
準備工程と、
前記ベース板の上面と前記絶縁層の下面側の前記金属層の下面とを接合材で接合する絶縁
基板接合工程と、
前記ベース板の上面に接して前記絶縁基板を取り囲むケース部材を配置するケース部材配
置工程と、
前記ベース板と前記ケース部材とで囲まれた領域内に配置され、前記絶縁基板の対向する
辺を跨ぎ、跨いだ前記絶縁基板の対向する辺間にわたり前記絶縁基板の上面に接する押さ
え部材を配置する押さえ部材配置工程と、
を備えた半導体装置の製造方法。 - 前記押さえ部材は、前記絶縁層の上面側の前記金属層の上面または前記絶縁層の上面に接
する、請求項16に記載に半導体装置の製造方法。 - 前記絶縁層の上面側の前記金属層の上面には、半導体素子が配置され、前記押さえ部材は
、前記半導体素子が配置された前記絶縁層の上面側の前記金属層の上面に接する、請求項
16または請求項17に半導体装置の製造方法。 - 前記押さえ部材配置工程は、ばね部材で前記押さえ部材を押さえる押さえ部材押さえ工程
を備える、請求項16から請求項18のいずれか1項に記載の半導体装置の製造方法。 - 請求項1から請求項15のいずれか1項に記載の半導体装置を有し、入力される電力を変
換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、
を備えた電力変換装置。
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JP2000299419A (ja) | 1999-04-15 | 2000-10-24 | Denso Corp | 半導体装置 |
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2019
- 2019-07-02 DE DE112019007524.1T patent/DE112019007524T5/de not_active Withdrawn
- 2019-07-02 WO PCT/JP2019/026306 patent/WO2021001927A1/ja active Application Filing
- 2019-07-02 US US17/606,054 patent/US20220199476A1/en active Pending
- 2019-07-02 JP JP2019563303A patent/JP6680419B1/ja active Active
- 2019-07-02 CN CN201980097742.1A patent/CN114008765A/zh not_active Withdrawn
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US5801330A (en) * | 1995-02-09 | 1998-09-01 | Robert Bosch Gmbh | Housing for an electrical device having spring means |
JPH09134983A (ja) * | 1995-11-09 | 1997-05-20 | Hitachi Ltd | 半導体装置 |
JP2004096034A (ja) * | 2002-09-04 | 2004-03-25 | Denki Kagaku Kogyo Kk | モジュール構造体の製造方法並びに回路基板の固定方法及び回路基板 |
JP2015122453A (ja) * | 2013-12-25 | 2015-07-02 | ダイキン工業株式会社 | パワーモジュール |
JP2015216349A (ja) * | 2014-04-21 | 2015-12-03 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
JP2016096188A (ja) * | 2014-11-12 | 2016-05-26 | 富士電機株式会社 | 半導体装置 |
JP2016157835A (ja) * | 2015-02-25 | 2016-09-01 | 三菱電機株式会社 | パワーモジュール、及びパワーモジュールの製造方法 |
JP2019036677A (ja) * | 2017-08-21 | 2019-03-07 | 三菱電機株式会社 | パワーモジュールおよび電力変換装置 |
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WO2021001927A1 (ja) | 2021-01-07 |
CN114008765A (zh) | 2022-02-01 |
JPWO2021001927A1 (ja) | 2021-09-13 |
US20220199476A1 (en) | 2022-06-23 |
DE112019007524T5 (de) | 2022-03-24 |
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