CN104054173B - 功率用半导体装置 - Google Patents

功率用半导体装置 Download PDF

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Publication number
CN104054173B
CN104054173B CN201280067069.5A CN201280067069A CN104054173B CN 104054173 B CN104054173 B CN 104054173B CN 201280067069 A CN201280067069 A CN 201280067069A CN 104054173 B CN104054173 B CN 104054173B
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Prior art keywords
partition wall
power semiconductor
sealing resin
electrode pattern
wiring
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CN201280067069.5A
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CN104054173A (zh
Inventor
寺井护
太田达雄
生田裕也
林�建
林建一
西村隆
筱原利彰
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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Abstract

本发明的目的在于得到一种不易在密封树脂中产生龟裂或者不易从基板引起剥离的可靠性高的功率用半导体装置。因此具备：半导体元件基板(4)，形成有表面电极图案(2)；功率用半导体元件(5、6)，经由接合材料粘着于表面电极图案；分隔壁(9)，以包围功率用半导体元件的方式接合在表面电极图案上而设置；第一密封树脂(120)，填满该分隔壁的内侧，覆盖功率用半导体元件以及分隔壁内的表面电极图案；以及第二密封树脂(12)，覆盖分隔壁、第一密封树脂及从分隔壁向外露出了的半导体元件基板，第二密封树脂的弹性模量被设定为小于第一密封树脂的弹性模量，在分隔壁的未与表面电极图案接触的面具备中继端子用电极(8)，经由中继端子用电极引出从分隔壁内向分隔壁外的布线(130)。

Description

功率用半导体装置
技术领域
本发明涉及半导体装置、特别是在高温下工作的功率用半导体装置的安装构造。
背景技术
伴随工业设备、电力铁道、汽车的发展，它们所使用的功率用半导体元件的使用温度也提高。近年来，大力地进行在高温下也工作的功率用半导体元件的开发，功率用半导体元件的小型化、高耐压化、高电流密度化得到发展。特别是，关于SiC、GaN等宽能带隙半导体，带隙比Si半导体大，期待功率用半导体装置的高耐压化、小型化、高电流密度化、高温工作。为了利用具有这样的特征的功率用半导体元件来制造装置，需要即使在功率用半导体元件在150℃以上的高温下工作的情况下也抑制接合材料的裂纹、布线的劣化来确保功率用半导体装置的稳定的工作。
另一方面，作为在半导体装置中用树脂对半导体元件进行密封的方法，在专利文献1中提出了如下方法：使用坝材料来包围半导体元件的周围，并对其内侧部分性地进行树脂密封。另外，在专利文献2中提出了如下方法：为了防止覆盖半导体元件的树脂扩散，在半导体元件的周围设置坝。
专利文献1：日本特开2003-124401号公报
专利文献2：日本特开昭58-17646号公报
发明内容
但是，在专利文献1以及专利文献2公开的方法中，如果半导体元件成为SiC等宽能带隙半导体元件而在比以往更高的温度下工作， 或者与它对应地，热循环试验的温度成为高温，则在密封树脂中产生龟裂，或者从基板引起剥离，具有使功率用半导体装置的可靠性显著降低的课题。
本发明是为了解决上述那样的问题点而完成的，其目的在于得到一种可靠性高的功率用半导体装置，即使功率用半导体元件反复在高温下工作而受到热循环的情况下，也不易在密封树脂中产生龟裂、或者不易从基板引起剥离。
本发明提供一种功率用半导体装置，具备：半导体元件基板，在绝缘基板的一面形成有表面电极图案并且在绝缘基板的另一面形成有背面电极图案；功率用半导体元件，经由接合材料粘着于表面电极图案的与绝缘基板相反一侧的面；分隔壁，以包围功率用半导体元件的方式接合在表面电极图案上而设置；第一密封树脂，填满该分隔壁的内侧，覆盖功率用半导体元件以及分隔壁内的表面电极图案；以及第二密封树脂，覆盖分隔壁、第一密封树脂以及从分隔壁向外露出了的半导体元件基板，第二密封树脂的弹性模量被设定为小于第一密封树脂的弹性模量，在分隔壁的不与表面电极图案接触的面具备中继端子用电极，经由中继端子用电极，引出了从分隔壁内向分隔壁外的布线。
本发明的功率用半导体装置如上述那样构成，所以能够得到可靠性高的功率用半导体装置，在高温工作时不易在密封树脂与表面电极图案、绝缘基板之间发生剥离，或者不易在密封树脂中产生龟裂，不易引起高温工作所致的工作不良。
附图说明
图1是示出本发明的实施方式1的功率用半导体装置的基本构造的截面图。
图2是省略壳体侧板、底座板等，去掉密封树脂而示出本发明的实施方式1的功率用半导体装置的基本构造的立体图。
图3是示出本发明的实施方式2的功率用半导体装置的基本构造 的截面图。
图4是示出本发明的实施方式2的功率用半导体装置的基本构造的其他例子的截面图。
图5是示出本发明的实施方式2的功率用半导体装置的基本构造的其他又一例子的截面图。
图6是示出本发明的实施方式2的功率用半导体装置的基本构造的其他又一例子的截面图。
图7是说明本发明的实施方式2的功率用半导体装置的一个例子的分隔壁的制作方法的例子的立体图。
图8是去掉部件的一部分而示出比较例的功率用半导体装置的基本构造的立体图。
(符号说明)
1：绝缘基板；2：表面电极图案；3：背面电极图案；4；半导体元件基板；5、6：功率用半导体元件；7、70：接合材料；8：中继端子用电极；9：分隔壁；10：底座板；11：壳体侧板；12：第二密封树脂；13：粗导线的布线；120：第一密封树脂；130：细导线的布线。
具体实施方式
实施方式1.
图1是示出本发明的实施方式1的功率用半导体装置的基本构造的截面图，图2是省略壳体侧板、底座板等并去掉密封树脂而示出的立体图。在绝缘基板1的上表面粘贴了表面电极图案2并在背面粘贴了背面电极图案3的半导体元件基板4的表面电极图案2的表面，利用焊锡等接合材料7粘着有功率用半导体元件5以及功率用半导体元件6。此处，例如功率用半导体元件5是对大电流进行控制的MOSFET那样的功率用半导体元件，功率用半导体元件6是例如与功率用半导体元件5并联地设置的回流用的二极管。以包围该功率用半导体元件5以及功率用半导体元件6的方式，在表面电极图案2上具备分隔壁9，在该分隔壁9的未与表面电极图案2接合的面的至少一个部位形 成了中继端子用电极8。关于半导体元件基板4，背面电极图案3侧通过焊锡等接合材料70而粘着到底座板10，该底座板10成为底板，通过对底座板10设置壳体侧板11而形成壳体。向该壳体内的分隔壁9内注入第一密封树脂120而制模，之后进而向壳体内注入第二密封树脂12而制模。对各功率用半导体元件连接有用于将各功率用半导体元件的电极等与外部进行电连接的粗导线的布线13、细导线的布线130。对表面电极图案2、分隔壁9上设置的中继端子用电极8进行中继，并经由端子14而进行向该外部的连接。
功率半导体由于对应于大电流、大电压以及需要机械性强度，所以需要使用截面面积大的粗导线，在对功率用半导体元件进行控制的信号线的连接中，根据功率用半导体元件的芯片上空间的关系，需要通过强度低的细导线来进行布线。因此，需要缩短细导线的布线长度来确保强度，需要对布线进行中继的中继端子。在本发明中，将中继端子用电极8设置于分隔壁9上。
作为第一密封树脂120的材料，使用例如环氧树脂，但不限于此，只要是具有期望的耐热性和向芯片、电极、导线等的粘接性、导线的断线保护性的树脂，就能够使用。例如，除了环氧树脂以外，优选使用聚硅酮树脂、聚氨酯树脂、聚酰亚胺树脂、聚酰胺树脂、聚酰胺酰亚胺树脂、丙烯酸树脂等。另外，为了调整耐热性、热膨胀系数，还能够使用使陶瓷粉分散了的树脂硬化物等。所使用的陶瓷粉使用Al2O3、SiO2、AlN、BN、Si3N4等，但不限于此，也可以使用金刚石、SiC、B2O3等。关于粉形状，使用球状的情况较多，但不限于此，也可以使用粉碎状、粒状、鳞片状、凝集体等。粉体的填充量是可得到必要的流动性、绝缘性、粘接性的量即可。关于第一密封树脂的线膨胀系数，利用以上那样的材料，以使成为与半导体元件基板4的材料中的表面电极图案2、背面电极图案3的材料(例如铜)的线膨胀系数接近的线膨胀系数的方式，调整为10ppm以上且30ppm以下的值。如实施方式3中说明那样，第一密封树脂的弹性模量优选调整为1GPa以上且20GPa以下的值。
中继端子用电极8满足必要的电气特性即可，能够使用例如铜、铝、铁等。另外，作为分隔壁9的材料，与第一密封树脂同样地使用例如环氧树脂，但不限于此，只要是具有期望的耐热性和粘接性、导线接合性的树脂，就能够使用。例如，除了环氧树脂以外，优选使用聚硅酮树脂、聚氨酯树脂、聚酰亚胺树脂、聚酰胺树脂、聚酰胺酰亚胺树脂、丙烯酸树脂等。另外，为了调整耐热性、热膨胀系数，还能够使用使陶瓷粉分散了的树脂硬化物等。所使用的陶瓷粉使用Al2O3、SiO2、AlN、BN、Si3N4等，但不限于此，也可以使用金刚石、SiC、B2O3等。关于粉形状，使用球状的情况较多，但不限于此，也可以使用粉碎状、粒状、鳞片状、凝集体等。粉体的填充量是可得到必要的流动性、绝缘性、粘接性的量即可。
另外，关于分隔壁9的线膨胀系数，调整为与第一密封树脂120的线膨胀系数差是50ppm以下，优选调整为15ppm以下。如果线膨胀系数差大于50ppm，则有时在分隔壁9与第一密封树脂120的界面中发生剥离。另外，分隔壁9上的中继端子用电极8还能够在分隔壁9上设置成岛状。各个岛成为各个端子，能够对各个布线进行中继。
而且，在覆盖分隔壁9以及第一密封树脂120的第二密封树脂12中，使用例如聚硅酮树脂，但不限于此，还能够使用聚氨酯树脂、丙烯酸树脂等。另外，虽然还能够添加Al2O3、SiO2等陶瓷粉来使用，但不限于此，也可以添加AlN、BN、Si3N4、金刚石、SiC、B2O3等，还可以添加聚硅酮树脂、丙烯酸树脂等树脂制的粉。关于粉形状，使用球状的情况较多，但不限于此，也可以使用粉碎状、粒状、鳞片状、凝集体等。粉体的填充量是可得到必要的流动性、绝缘性、粘接性的量即可。
另外，第二密封树脂12的弹性模量被调整为至少小于第一密封树脂120。如实施方式3中所说明那样，第二密封树脂12的弹性模量优选调整为30kPa以上且3GPa以下的值。第二密封树脂12除了覆盖分隔壁9以及第一密封树脂120以外，还覆盖从半导体元件基板4的分隔壁9向外露出了的部分。在从该半导体元件基板4的分隔壁9 向外露出了的部分中，有绝缘基板1露出了的部分。关于与半导体元件基板4相接的密封树脂，在密封树脂发生硬化收缩或热循环时的热应力时，发生应力负荷。第一密封树脂120被调整为成为与半导体元件基板4的材料中的表面电极图案2、背面电极图案3的材料的线膨胀系数接近的线膨胀系数，所以线膨胀系数与绝缘基板1不同。此处，用弹性模量小的第二密封树脂12来密封向分隔壁9的外部露出了的半导体元件基板4，与绝缘基板1接触的部分的应力被缓和，能够防止密封树脂的剥离等。其结果，能够防止第一密封树脂120从半导体元件基板4剥离或者产生龟裂，能够得到可靠性高的半导体装置。
关于本发明，不仅是本实施方式1，即便在其他实施方式中，作为功率用半导体元件而应用于在150℃以上的高温下工作的功率用半导体元件时效果也大。特别是在应用于由碳化硅(SiC)、氮化镓(GaN)系材料或者金刚石这样的材料形成的、带隙大于硅(Si)的所谓宽能带隙半导体时，效果大。另外，在图2中，在被制模的一个功率用半导体装置中仅搭载了2个功率用半导体元件，但不限于此，能够根据所使用的用途而搭载必要的个数的功率用半导体元件。
关于表面电极图案2、背面电极图案3、中继端子用电极8、底座板10以及端子14，通常使用铜，但不限于此，也可以使用铝、铁，还可以使用将它们复合了的材料。另外，关于表面，通常进行镀镍的情况较多，但不限于此，也可以进行金、锡镀敷，只要是能够将必要的电流和电压供给到功率用半导体元件的构造即可。另外，也可以使用铜/殷钢(invar)/铜等的复合材料，还可以使用SiCAl、CuMo等合金。另外，表面电极图案2被埋设于第一密封树脂120中，所以也可以为了提高与树脂的粘着性而在表面中设置微小的凹凸，还可以以化学性地结合的方式利用硅烷耦合剂等来设置粘接辅助层。
半导体元件基板4是指，在Al2O3、SiO2、AlN、BN、Si3N4等陶瓷的绝缘基板1中设置铜、铝的表面电极图案2以及背面电极图案3而成的基板。半导体元件基板4需要具备散热性和绝缘性，不限于上述，也可以是在使陶瓷粉分散了的树脂硬化物、或者埋入了陶瓷板的 树脂硬化物那样的绝缘基板1中设置表面电极图案2以及背面电极图案3而成的基板。另外，关于在绝缘基板1中使用的陶瓷粉，使用Al2O3、SiO2、AlN、BN、Si3N4等，但不限于此，也可以使用金刚石、SiC、B2O3等。另外，也可以使用聚硅酮树脂、丙烯酸树脂等树脂制的粉。关于粉形状，使用球状的情况较多，但不限于此，也可以使用粉碎状、粒状、鳞片状、凝集体等。关于粉体的填充量，填充可得到必要的散热性和绝缘性的量即可。关于在绝缘基板1中使用的树脂，通常使用环氧树脂，但不限于此，也可以使用聚酰亚胺树脂、聚硅酮树脂、丙烯酸树脂等，只要是兼具绝缘性和粘接性的材料即可。
关于布线，使用由铝或者金所形成的截面为圆形的线体(以下称为导线)，但不限于此，也可以使用使例如截面为方形的铜板成为帯状而得到的结构(以下称为带式联结器(ribbon bond))。另外，能够根据功率用半导体元件的电流密度等，来设置必要的条数。或者，关于布线，也可以利用熔融金属来接合铜、锡等金属片，只要是能够将必要的电流和电压供给到功率用半导体元件的构造即可。
关于布线的布线形状、布线直径，能够根据电流量、布线长度、电极焊盘面积而适当自由地选择来使用。例如，在电流量大的情况或布线长度长的情况下，能够使用直径粗的布线、例如直径为400μm的导线或带式联结器等。另外，SiC半导体元件在成本方面实现了小面积化，电极焊盘面积小的情况多，在该情况下，能够使用截面面积是0.018mm2以下的细导线的布线130、例如直径为150μm的导线等。
另外，关于截面面积为0.018mm2以下的细导线的布线130，至少50％以上被第一密封树脂所包覆。在包覆率小于50％的情况下，在树脂密封时以及热循环试验时、工作时，有时会产生断线。如果包覆率是50％以上，则能够避免断线，能够提供可靠性高的功率用半导体装置。
在以往的半导体装置中，例如如专利文献1的图1所示，将本申请的与表面电极图案2相当的导电图案分为固定半导体元件的冲模焊盘和用于对布线进行中继的第二焊盘来形成。冲模焊盘和第二焊盘被 绝缘，在冲模焊盘与第二焊盘之间露出了电路用基板。将这些电路用基板、导电图案、半导体元件用密封树脂进行了密封，但由于密封树脂材料和电路用基板材料的热膨胀系数有大的差异，所以如果反复进行高温工作，则有时在该电路用基板露出了的部分中在密封树脂与电路用基板之间产生裂纹、或者发生剥离。如果在该部分中发生了裂纹、剥离，则会对冲模焊盘与第二焊盘之间施加高电压，所以有时产生绝缘破坏。另一方面，在本发明的实施方式1的功率用半导体装置中，表面电极图案2至少在接合有功率用半导体元件的部分中成为相同的电位，在与第一密封树脂120接触的部分中绝缘基板1未露出，所以不用担心发生裂纹、剥离，不易产生绝缘破坏。因此，能够提供可靠性高的功率用半导体装置。
实施方式2.
在实施方式2中，记述分隔壁9上的中继端子用电极8的位置。中继端子用电极8能够设置于不与分隔壁9的表面电极图案2导通而能够确保必要的绝缘距离的部位。图3是示出本发明的实施方式2的功率用半导体装置的基本构造的一个例子的截面图，与图1、图2相同的符号表示相同或者相当的部分。图3的功率用半导体装置是如下构造：使分隔壁9的上表面的内侧的一部分降低，在该部分中设置中继端子用电极8，使中继端子用电极8埋没到第一密封树脂120中。在该情况下，能够缩短细导线的布线130的长度，而且能够用第一密封树脂120将细导线的布线130全部包覆，所以防止断线的特性得到提高，能够提供可靠性高的功率用半导体装置。另外，采用在绝缘基板1上未用电极形成电路图案而在分隔壁9上设置中继端子用电极8从而在纵向上形成电路的构造，所以绝缘基板1不会向横向扩展而可实现模块尺寸的小型化。而且，分隔壁9由绝缘物形成，所以能够充分地确保电极间距离，所以可实现高耐压化。
图4是示出本发明的实施方式2的功率用半导体装置的基本构造的其他例子的截面图，与图1、图2相同的符号表示相同或者相当的部分。在图4的功率用半导体装置中，贯通分隔壁9而设置了中继端 子用电极8。在该情况下，也能够缩短细导线的布线130的长度，而且能够用第一密封树脂120将细导线的布线130全部包覆，所以防止断线的特性得到提高。另外，布线连接的自由度增加，模块设计的容易性得到提高。
图5是示出本发明的实施方式2的功率用半导体装置的基本构造的其他又一例子的截面图，与图1、图2相同的符号表示相同或者相当的部分。在图5的功率用半导体装置中，分隔壁9的形状与图3的功率用半导体装置相同，但作为功率用半导体元件彼此、以及与外部的连接布线，使用了粗导线的布线13以及金属制的引线131。在该情况下，能够缩短从功率用半导体元件5向中继端子用电极8的细导线的布线130的长度，能够用第一密封树脂120将细导线的布线130全部包覆，所以防止断线的特性得到提高。另外，通过引线131可得到大的接合面积，所以能够实现内部接合寿命的长寿命化。而且，芯片内的电流分布被抑制，芯片温度均衡化而芯片温度上升被抑制，从而能够降低热电阻。
另外，在图5的截面中，不存在从表面电极图案2直接向外部引出的布线，但与图3、图4所示的构造同样地，在其他截面中还存在从表面电极图案2直接向外部引出的布线。
关于金属制的引线131，通常使用铜，但不限于此，也可以使用铝、铁，还可以使用将它们复合而成的材料。另外，关于表面，也可以进行镀敷等，使用例如镍、金、锡镀敷的情况多，但只要是能够将必要的电流和电压供给到功率用半导体元件的构造即可。另外，也可以使用铜/殷钢/铜等的复合材料，还可以使用SiCAl、CuMo等合金。另外，金属制的引线131被埋设于第一密封树脂120中，所以也可以为了提高与树脂的粘着性而在表面设置微小的凹凸，还可以以化学性地结合的方式利用硅烷耦合剂等来设置粘接辅助层。
图6是示出本发明的实施方式2的功率用半导体装置的基本构造的其他又一例子的截面图，与图1、图2相同的符号表示相同或者相当的部分。图6的功率用半导体装置成为如下结构：将在设置了功率 用半导体元件5、功率用半导体元件6的半导体元件基板4的周围所设置的分隔壁9内部被第一密封树脂120密封了的多个密封模块配置于由壳体侧板11和底座板10构成的壳体内，将壳体内的多个密封模块用第二密封树脂12来覆盖。另外，构成为如下：表面电极图案2的一部分向分隔壁9的外侧露出，对该表面电极图案2向分隔壁9的外侧露出了的部分连接引线132等布线构件，进行与其他密封模块、外部的连接。
如图6那样，如果要从功率用半导体元件5通过中继端子用电极8进行使用了细导线的布线130的布线，则表面电极图案2也可以向分隔壁9的外侧露出。在这个结构中，关于从表面电极图案2向分隔壁9的外部的利用粗导线或者引线形成的布线，能够将表面电极图案2向分隔壁9的外侧露出了的部分用作连接部。在该情况下，能够缩短从功率用半导体元件5向中继端子用电极8的细导线的布线130的长度，能够用第一密封树脂120将细导线的布线130全部包覆，所以防止断线的特性得到提高。另外，在壳体内配置多个密封模块，用具有比第一密封树脂120的弹性模量小的弹性模量的第二密封树脂12来覆盖该多个密封模块。在该结构中，也与实施方式1同样地，用弹性模量小的第二密封树脂12来密封向分隔壁9的外部露出了的半导体元件基板4，与绝缘基板1接触的部分被应力缓和，能够防止密封树脂的剥离等。其结果，能够防止第一密封树脂120从半导体元件基板4剥离或者产生龟裂，能够得到可靠性高的半导体装置。
另外，在图6的截面图中，不存在从表面电极图案2直接向外部引出的布线，但在图6的构造中也与图3、图4所示的构造同样地，在其他截面中还存在从表面电极图案2直接向外部引出的布线。
实施方式3.
在本实施方式3中，记述实施方式2中的图5所示的功率用半导体装置中的分隔壁9的制作方法。此处，关于分隔壁9，在本发明的范围内能够取任意的形状，不限于图5的构造。即，基本的制造方法如本实施方式3所述，但能够按照最适合于所使用的分隔壁9的条件，制作中继端子用电极8的位置、数量、面积等。
图7示出分隔壁9的详细构造。图7(A)是示出分隔壁9的下部部件91的立体图，图7(B)是示出上部部件92的立体图，图7(C)是示出最终的分隔壁9的立体图。在下部部件91的上表面形成有导体。导体之中的一部分导体81在分隔壁9完成后成为中继端子用电极。另外，还可以在上部部件92的上表面，也形成在分隔壁9完成后成为中继端子用电极的导体82。在图7(A)以及图7(B)中，形成了在由绝缘构件构成的绝缘性树脂的单面或者两面形成有导体的片状构件，对该片状构件的导体使用照相制版，形成成为中继端子用电极8的导体等必要的图案。之后，能够按照期望的尺寸切出而设为分隔壁9的上部部件92、下部部件91。之后，将分隔壁9的上部部件92、下部部件91利用环氧树脂进行粘贴并硬化，从而能够得到分隔壁9。另外，还能够在上部部件92、下部部件91各自中形成了必要的图案之后，将两者用环氧树脂进行粘贴，之后按照期望的尺寸切出而用作分隔壁9。或者，也可以如图7(A)所示，在下部部件91的上表面周围形成导体83，在与下部部件91的导体83对应的上部部件92的下表面的位置也形成导体，并将下部部件91与上部部件92通过焊锡来粘贴。
另外，如图1、图2所示是分隔壁中无阶梯的构造的情况下，无需分割为上部部件和下部部件，能够利用一个片状构件，简便地制作分隔壁。
关于片状构件，例如作为绝缘性树脂使用半硬化环氧片，在其单面或者两面通过冲压成型来粘接铜箔，而能够制作铜贴片。另外，关于片状构件，能够沿用一般的玻璃环氧基板。
关于铜箔的厚度，只要能得到必要的电气特性就没有特别限定，但优选使用1～2000μm的厚度，更优选使用20～400μm的厚度。如果铜箔过薄，则在用于接合布线的导线接合时，有时在铜箔与导线的接合部中铜箔破损，如果过厚，则在中继端子用电极的图案形成时的蚀刻中花费时间，生产性显著降低。关于绝缘构件的厚度，只要能得到 必要的绝缘特性就没有特别限定，但优选调整为1～5000μm，更优选调整为50～2000μm。如果树脂厚度薄，则无法得到必要的绝缘特性，如果树脂厚度厚，则在导线接合时难以处置、或者难以按照期望尺寸切出。
另外，在分隔壁9的下部安装了例如铜等导体的情况下，在向半导体元件基板4上的表面电极图案2安装分隔壁9时，能够利用使用了焊锡的接合方法。在分隔壁9的下部没有导体的情况下，能够使用例如用环氧树脂等来接合的方法。
涂覆感光性的组成物(光致抗蚀剂)，通过图案曝光、显影，仅使成为中继端子用电极8的导体的必要的部分残留，从而形成分隔壁9中设置的导体的图案。另外，在例如图7(B)所示的分隔壁的下部部件的下表面等分隔壁中无需导体的图案的情况下，可省略该工序。
能够使用激光切割、刳刨加工等一般的单片化的方法来切出分隔壁9。能够根据所搭载的半导体元件基板4的尺寸，适当地选择分隔壁9的尺寸。另外，在通过导线接合来连接布线的情况下，根据所使用的导线直径、导线接合器的下压位置精度等的限制，形状也被规定。关于分隔壁9的尺寸，例如使用纵20mm、横25mm、分隔壁9的宽度1.5mm、高度(铜箔和树脂的总厚)3.5mm这样的尺寸。
在绝缘性树脂的单面粘接铜箔，并通过蚀刻形成了期望的导体的图案而成的分隔壁9的情况下，关于向半导体元件基板4固定分隔壁9的固定方法，优选为通过环氧树脂等绝缘性粘接剂而粘着到半导体元件基板4的任意的位置的方法、通过加热到绝缘性树脂的软化点以上来按压到任意的位置之后进行冷却从而使其粘着的方法等。
另外，关于在分隔壁9中使用的绝缘构件，优选使线膨胀系数与第一密封树脂120一致。如果分隔壁9和第一密封树脂120的线膨胀系数大不相同，则在功率用半导体元件的工作反复、即产生了热循环的情况下，有可能在分隔壁9和第一密封树脂120的界面中产生剥离。因此，分隔壁9的绝缘构件的线膨胀系数和第一密封树脂120的线膨胀系数的差调整为50ppm以下为宜，优选调整为15ppm以下为宜。
实施方式3.
在本实施方式3中，利用使用了各种材料的分隔壁、密封树脂来制作试验用的半导体装置模块，并进行功率循环试验、热循环试验，将其结果作为实施例示出。
实施例1.
首先，制作本发明的图5的构造的功率用半导体装置、以及图8所示的比较例的功率用半导体装置，并实施了热循环试验。通过在热循环试验的实施前后实施PDIV(PDInception Voltage：部分放电开始电压)测定，评价了热循环试验。比较例的功率用半导体装置是图8所示那样的与以往技术相当的构造的功率用半导体装置。在图8中，与图2同样地省略壳体侧板、底座板等并去掉密封树脂而示出，但比较例的功率用半导体装置为将被壳体侧板和底座板所包围的壳体内用密封树脂进行了密封的构造。比较例的功率用半导体装置成为如下构造：如图8所示，不使用分隔壁，与表面电极图案2电绝缘，通过与表面电极图案2同样地形成在绝缘基板1上的中继端子用电极图案21对布线13和布线15进行中继。另外，关于密封树脂的材料，使用了与作为比较对象的本发明的图5的构造的功率用半导体装置的第一密封树脂相同的材料。
将功率用半导体装置整体放入到能够控制温度的恒温槽，使恒温槽的温度在-40℃～150℃之间反复变化，而实施了热循环试验。使用部分放电试验机，测定了PDIV。在半导体元件基板4的表面电极图案2与背面电极图案3之间连接电极，在惰性液体中在25℃下以交流频率60Hz进行升压，读取发生了10pC以上的部分放电时的电压。按照试验数n＝5来实施，用其平均值进行了评价。表1示出结果。可知本发明的图5的构造的功率用半导体装置、以及比较例的半导体装置都在初始状态下具有优良的绝缘特性，但在热循环实施之后，相比于比较例，图5的构造的半导体装置的部分放电电压充分地优良。
[表1]
本实施例 比较例
初始 >6kV >6kV
100循环之后 >6kV 4.2kV
200循环之后 >6kV 2.3kV
300循环之后 >6kV 2.2kV
600循环之后 >6kV 2.3kV
在以下的实施例2～实施例5中，制作将分隔壁和功率用半导体元件以图5所示的结构设置于半导体元件基板、并通过布线连接了各安装部件而成的功率用半导体装置，实施了功率循环试验以及热循环试验，说明其结果。在功率循环试验中，直至半导体元件的温度成为200℃为止进行通电，如果达到该温度则停止通电，直至半导体元件的温度成为120℃为止进行冷却，在冷却了之后再次进行了通电。另外，将功率用半导体装置整体放入到能够控制温度的恒温槽中，使恒温槽的温度在-40℃～150℃之间反复变化，而实施了热循环试验。
实施例2.
在本实施例2中，以图5的构造，制作各种弹性模量的第二密封树脂的半导体装置，并实施了功率循环试验以及热循环试验。在表2中，示出对于第一密封树脂120使用弹性模量为7.0GPa的三悠(Sanyu Rec Co.,Ltd.)制EX-550、并改变了第二密封树脂12的弹性模量时的功率循环试验以及热循环试验的结果。
关于分隔壁9，作为绝缘构件使用日立化学(Hitachi Chemical Company,Ltd.)制MCL-E-700G，加工为期望的尺寸，通过蚀刻形成中继端子用电极8的图案，分隔壁9使用由此得到的构件，并利用三悠制EX-550固定到半导体元件基板4。关于半导体装置，底座板10的尺寸为50×92×3mm，使用了AlN的绝缘基板1的尺寸为23.2×23.4×1.12mm，使用了SiC的半导体元件的尺寸为5×5×0.35mm，在接合材料7中使用千住金属(SENJU METAL INDUCTRYCO., LTD.)制M731、使用了聚苯硫醚(PPS)的壳体侧板11、直径为0.4mm的使用了铝的布线，仅有将半导体元件与分隔壁9上的中继端子用电极8进行连接的布线使用了直径为0.15mm的铝布线。另外，在本试验中，在模块内部仅搭载1个SiC半导体元件，进行了功率循环试验以及热循环试验。
说明表2的例子2-1。可知在将道康宁制SE1885(弹性模量15kPa)用于第二密封树脂而制作了模块的情况下，在功率循环试验中，在110000循环后在第一密封树脂120中发生剥离，在热循环试验中也在200循环后发生第一密封树脂120的剥离和龟裂，导致功率用半导体装置不工作。
在例子2-2中，将道康宁制SE1886(弹性模量30kPa)用于第二密封树脂而制作了模块的结果，弄清了功率循环试验改善至200000循环，在热循环试验中也改善至800循环。
在例子2-3中，将信越化学(Shin-Etsu Chemical Co.,Ltd.)制KE1833(弹性模量3.5MPa)用于第二密封树脂而制作了模块的结果，弄清了功率循环试验改善至210000循环，在热循环试验中半导体装置的特性被维持到1200循环以上。
在例子2-4中，将在信越化学制KER-4000中添加约50wt％的玻璃填料、并把弹性模量调整为900MPa得到的材料用于第二密封树脂而制作了模块的结果，可知功率循环试验改善至210000循环，在热循环试验中半导体装置的特性也被维持到1200循环以上。
在例子2-5中，将信越化学制SCR-1016(弹性模量1400MPa)用于第二密封树脂而制作了模块的结果，弄清了功率循环试验降低到180000循环，热循环试验也降低到500循环。
在例子2-6中，将在信越化学制SCR-1016中添加约54wt％的玻璃填料、并把弹性模量调整为3000MPa得到的材料用于第二密封树脂而制作了模块的结果，可知功率循环试验降低到120000循环，热循环试验也降低到250循环。
根据以上的结果，关于第二密封树脂的弹性模量N，可知30kPa 以上且小于3GPa的范围是合适的。
[表2]
实施例3.
在本实施例3中，以图5的构造，制作各种弹性模量的第一密封树脂120的半导体装置，实施了功率循环试验以及热循环试验。在表3中，示出对于分隔壁9使用信越化学制KE1833(弹性模量3.5MPa)、并作为第二密封树脂12使用道康宁制SE1886(弹性模量30kPa)而改变了第一密封树脂120的弹性模量时的功率循环试验以及热循环试验的结果。
说明表3的例子3-1。作为第一密封树脂120使用了在信越化学制KER-4000中添加约50wt％的玻璃填料并将弹性模量调整为0.9GPa得到的树脂的结果，可知在功率循环试验中，在100000循环后在密封树脂中发生剥离，在热循环试验中也在100循环后发生密封树脂的剥离和龟裂，导致功率用半导体装置不工作。
在例子3-2中，作为第一密封树脂120使用了在信越化学制KER-4000中添加约58wt％的玻璃填料并将弹性模量调整为1GPa得到的树脂的结果，可知在功率循环试验中改善至170000循环，在热循环试验中改善至350循环。
在例子3-3中，将三悠制EX-550(弹性模量7.0GPa)用于第一密封树脂120的结果，可知在功率循环试验中改善至210000循环，在热循环试验中改善至1200循环以上。
在例子3-4中，作为第一密封树脂120使用了在三悠制EX-550中添加15wt％的二氧化硅填料并将弹性模量调整为12GPa得到的密封树脂的结果，可知在功率循环试验中成为170000循环，在热循环试验中成为700循环。
在例子3-5中，作为第一密封树脂120使用了在三悠制EX-550中添加20wt％的二氧化硅填料并将弹性模量调整为14GP得到的密封树脂的结果，可知在功率循环试验中成为140000循环，在热循环试验中成为500循环。
在例子3-6中，作为第一密封树脂120使用了在三悠制EX-550中添加36wt％的二氧化硅填料并将弹性模量调整为20GPa得到的密封树脂的结果，可知在功率循环试验中成为110000循环，在热循环试验中成为450循环。
在例子3-7中，作为第一密封树脂120使用了在三悠制EX-550中添加40wt％的二氧化硅填料并将弹性模量调整为22GPa得到的密封树脂的结果，可知在功率循环试验中成为100000循环，在热循环试验中成为200循环。
根据其结果，关于第一密封树脂的弹性模量M，弄清了1GPa以上且20GPa以下的范围是合适的。
[表3]
例子3-1 例子3-2 例子3-3 例子3-4 例子3-5 例子3-6 例子3-7
第一密封树脂的弹性模量 0.9GPa 1GPa 7GPa 12GPa 14GPa 20GPa 22GPa
功率循环试验寿命(循环) 100000 170000 210000 170000 140000 110000 100000
热循环试验寿命(循环) 100 350 >1200 700 500 450 200
实施例4.
在本实施例4中，以图5的构造，制作通过分配树脂的密封高度而使连接半导体元件和分隔壁9上的中继端子用电极8的布线的包覆率改变的功率用半导体装置，并实施了热循环试验。以直至发生导线的断线为止的热循环次数，评价了试验。作为第一密封树脂120，使 用在三悠制EX-550中添加15wt％的二氧化硅填料并将弹性模量调整为12GPa得到的密封树脂，作为第二密封树脂12使用道康宁制SE1886(弹性模量30kPa)，除此以外，使用了与实施例2同样的结构。
表4的例子3-4表示实施例3的例子3-4的构造。如从表4的例子4-1～例子4-4、以及例子3-4所示的试验结果可知，在该构造中，如果将半导体元件和分隔壁9上的中继端子用电极8进行连接的布线的包覆率超过50％，则呈现良好的热循环特性，但在小于50％的包覆率的情况下，直至发生导线断线为止的热循环次数降低。根据其结果，关于将半导体元件和分隔壁9上的中继端子用电极8进行连接的布线的包覆率，弄清了50％以上的范围是合适的。
[表4]

Claims (7)

1.一种功率用半导体装置，其特征在于，具备：
半导体元件基板，在绝缘基板的一面形成有表面电极图案并且在所述绝缘基板的另一面形成有背面电极图案；
功率用半导体元件，经由接合材料粘着于所述表面电极图案的与所述绝缘基板相反一侧的面；
分隔壁，以包围所述功率用半导体元件的方式接合在所述表面电极图案上而设置；
壳体，收纳所述半导体元件基板、所述功率用半导体元件以及所述分隔壁；
第一密封树脂，填满所述分隔壁的内侧，覆盖所述功率用半导体元件以及所述分隔壁内的所述表面电极图案；以及
第二密封树脂，对所述壳体内进行制模，覆盖所述分隔壁、所述第一密封树脂以及从所述分隔壁向外露出了的所述半导体元件基板，
所述第二密封树脂的弹性模量被设定为小于所述第一密封树脂的弹性模量，
在所述分隔壁，以不与所述表面电极图案导通的方式具备中继端子用电极，
设置有从所述功率用半导体元件向所述中继端子用电极连接的细导线的布线以及从所述中继端子用电极向设置于所述壳体的端子连接的比所述细导线的布线粗的粗导线的布线，
所述细导线的布线全部被所述第一密封树脂所覆盖。
2.根据权利要求1所述的功率用半导体装置，其特征在于，
所述第一密封树脂的弹性模量是1GPa以上且20GPa以下，线膨胀系数是10ppm以上且30ppm以下。
3.根据权利要求1所述的功率用半导体装置，其特征在于，
所述分隔壁和所述第一密封树脂的线膨胀系数的差是50ppm以下。
4.根据权利要求1所述的功率用半导体装置，其特征在于，
所述第二密封树脂的弹性模量是30kPa以上且3GPa以下。
5.根据权利要求1所述的功率用半导体装置，其特征在于，
所述细导线的布线的截面面积是0.018mm2以下。
6.根据权利要求1所述的功率用半导体装置，其特征在于，
所述功率用半导体元件由宽能带隙半导体形成。
7.根据权利要求6所述的功率用半导体装置，其特征在于，
所述宽能带隙半导体是碳化硅、氮化镓系材料、金刚石中的某一种半导体。
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