JP4492448B2 - 半導体パワーモジュール - Google Patents
半導体パワーモジュール Download PDFInfo
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- JP4492448B2 JP4492448B2 JP2005174472A JP2005174472A JP4492448B2 JP 4492448 B2 JP4492448 B2 JP 4492448B2 JP 2005174472 A JP2005174472 A JP 2005174472A JP 2005174472 A JP2005174472 A JP 2005174472A JP 4492448 B2 JP4492448 B2 JP 4492448B2
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- epoxy resin
- power module
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- 239000004065 semiconductor Substances 0.000 title claims description 88
- 239000003822 epoxy resin Substances 0.000 claims description 94
- 229920000647 polyepoxide Polymers 0.000 claims description 94
- 229910000679 solder Inorganic materials 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 82
- 229920005989 resin Polymers 0.000 claims description 69
- 239000011347 resin Substances 0.000 claims description 69
- 229920001721 polyimide Polymers 0.000 claims description 41
- 239000009719 polyimide resin Substances 0.000 claims description 30
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 17
- 230000009477 glass transition Effects 0.000 claims description 14
- 239000004962 Polyamide-imide Substances 0.000 claims description 10
- 229920002312 polyamide-imide Polymers 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 7
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 14
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- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 3
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- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
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- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- -1 Cu-Sn compound Chemical class 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 239000010419 fine particle Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
10-6/℃)に合わせた物性のエポキシ系樹脂で直接に封止した。
(1)線膨張係数:12×10-6〜30×10-6/℃。
(2)ヤング率:3〜20GPa、望ましくは5〜10GPa。
(3)密着性に優れること。特に先に塗布されるポリイミド系樹脂に対しての密着性が良いこと。
(4)ガラス転移温度Tg:150℃以上。望ましくは170℃以上。
(5)シリコーンゲル等の高温で安定な微粒子ゴムをエポキシ系樹脂に分散させて熱衝撃を緩和。
(6)不純物濃度:Na+、K+≦1ppm、Cl-≦5ppm。
(7)エポキシ系樹脂を封止前に実装した基板表面を、予め耐熱性のある柔らかいポリアミドイミド系、あるいはポリイミド系樹脂で薄くスプレー等で塗布する。
Claims (3)
- 絶縁基板に形成した回路にハンダを介して接合した複数の半導体チップと、該半導体チ
ップに接合した配線部材とを有する半導体パワーモジュールにおいて、
前記半導体チップと配線部材がポリイミド系樹脂あるいはポリアミドイミド系樹脂から
なる第1の樹脂と、該第1の樹脂の上に配置したエポキシ系樹脂からなる第2の樹脂とで
被覆されており、
該第2の樹脂による被覆部が複数あり、前記エポキシ系樹脂がさらにウレタン樹脂で覆
われていることを特徴とする半導体パワーモジュール。 - 請求項1に記載の半導体パワーモジュールにおいて、前記ウレタン樹脂中にはフェライト粒子が混ぜてあることを特徴とする半導体パワーモジュール。
- ベース基板と、該ベース基板上部に配置される絶縁基板と、該絶縁基板に形成した回路
にハンダを介して接合した複数の半導体チップと、
該半導体チップに接合した配線部材とを有する半導体パワーモジュールであって、
前記半導体チップと配線部材がポリイミド系樹脂あるいはポリアミドイミド系樹脂から
なる第1の樹脂と、該第1の樹脂の上に配置したエポキシ系樹脂からなる第2の樹脂とで
被覆されており、
該第2の樹脂による被覆部が複数あり、
前記半導体チップに接合する配線部材がベローズ型とされたリードフレームであり、
さらに、前記第2の樹脂のガラス転移温度(Tg)が150℃以上であることを特徴と
する半導体パワーモジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005174472A JP4492448B2 (ja) | 2005-06-15 | 2005-06-15 | 半導体パワーモジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005174472A JP4492448B2 (ja) | 2005-06-15 | 2005-06-15 | 半導体パワーモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006351737A JP2006351737A (ja) | 2006-12-28 |
JP4492448B2 true JP4492448B2 (ja) | 2010-06-30 |
Family
ID=37647278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005174472A Active JP4492448B2 (ja) | 2005-06-15 | 2005-06-15 | 半導体パワーモジュール |
Country Status (1)
Country | Link |
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JP (1) | JP4492448B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11101225B2 (en) | 2017-02-09 | 2021-08-24 | Mitsubishi Electric Corporation | Semiconductor device and power conversion device |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4492454B2 (ja) * | 2005-06-20 | 2010-06-30 | 富士電機システムズ株式会社 | パワー半導体モジュール |
JP2007157863A (ja) * | 2005-12-02 | 2007-06-21 | Hitachi Ltd | パワー半導体装置及びその製造方法 |
JP2009158725A (ja) * | 2007-12-27 | 2009-07-16 | Panasonic Corp | 半導体装置およびダイボンド材 |
JP5450192B2 (ja) | 2010-03-24 | 2014-03-26 | 日立オートモティブシステムズ株式会社 | パワーモジュールとその製造方法 |
JP2012015222A (ja) * | 2010-06-30 | 2012-01-19 | Hitachi Ltd | 半導体装置 |
JP5734736B2 (ja) * | 2011-05-18 | 2015-06-17 | 新電元工業株式会社 | パワーモジュールの製造方法 |
JP5812712B2 (ja) * | 2011-06-17 | 2015-11-17 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP5570476B2 (ja) * | 2011-07-05 | 2014-08-13 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP5719740B2 (ja) * | 2011-09-30 | 2015-05-20 | 株式会社日立製作所 | 配線材料および、それを用いた半導体モジュール |
US9343388B2 (en) * | 2012-01-25 | 2016-05-17 | Mitsubishi Electric Corporation | Power semiconductor device |
JP5944688B2 (ja) * | 2012-02-22 | 2016-07-05 | ローム株式会社 | パワーモジュール半導体装置 |
JP6102362B2 (ja) * | 2013-03-12 | 2017-03-29 | 株式会社リコー | シミュレーション解析装置、シミュレーション解析方法、プログラム |
JP2014187264A (ja) | 2013-03-25 | 2014-10-02 | Toshiba Corp | 半導体装置 |
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US11239123B2 (en) | 2013-08-29 | 2022-02-01 | Mitsubishi Electric Corporation | Semiconductor module, semiconductor device, and vehicle |
JP6041795B2 (ja) * | 2013-12-10 | 2016-12-14 | 三菱電機株式会社 | 半導体装置 |
JP6398270B2 (ja) * | 2014-04-03 | 2018-10-03 | 富士電機株式会社 | 半導体装置 |
CN110120375A (zh) | 2014-05-20 | 2019-08-13 | 三菱电机株式会社 | 功率用半导体装置 |
JP6385234B2 (ja) | 2014-10-16 | 2018-09-05 | 三菱電機株式会社 | 半導体装置 |
US10847488B2 (en) | 2015-11-02 | 2020-11-24 | Mediatek Inc. | Semiconductor package having multi-tier bonding wires and components directly mounted on the multi-tier bonding wires |
US10037936B2 (en) | 2015-11-02 | 2018-07-31 | Mediatek Inc. | Semiconductor package with coated bonding wires and fabrication method thereof |
CN113018644B (zh) * | 2016-06-24 | 2023-09-08 | 朝日英达科株式会社 | 导丝 |
EP3276660B1 (en) * | 2016-07-27 | 2020-10-28 | Infineon Technologies AG | Double-encapsulated power semiconductor module and method for producing the same |
WO2018138902A1 (ja) | 2017-01-30 | 2018-08-02 | 三菱電機株式会社 | パワー半導体装置の製造方法およびパワー半導体装置 |
JP6702219B2 (ja) * | 2017-02-10 | 2020-05-27 | 株式会社デンソー | 樹脂封止部品及びその製造方法 |
CN110326103B (zh) | 2017-02-28 | 2023-05-02 | 三菱电机株式会社 | 半导体装置及其制造方法 |
JP6707574B2 (ja) * | 2018-02-14 | 2020-06-10 | 朝日インテック株式会社 | ガイドワイヤ |
DE112018007999T5 (de) * | 2018-09-20 | 2021-06-02 | Mitsubishi Electric Corporation | Leistungs-Halbleitermodul und Verbundmodul |
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JP6877600B1 (ja) * | 2020-01-16 | 2021-05-26 | 三菱電機株式会社 | 半導体装置 |
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