JP4319591B2 - 半導体パワーモジュール - Google Patents
半導体パワーモジュール Download PDFInfo
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- JP4319591B2 JP4319591B2 JP2004208703A JP2004208703A JP4319591B2 JP 4319591 B2 JP4319591 B2 JP 4319591B2 JP 2004208703 A JP2004208703 A JP 2004208703A JP 2004208703 A JP2004208703 A JP 2004208703A JP 4319591 B2 JP4319591 B2 JP 4319591B2
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/83909—Post-treatment of the layer connector or bonding area
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- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
また、2つの異なった機能を有する樹脂の組合せにより、大型チップ、厳しいパワーサイクル、温度サイクル試験に対してもより耐えられる構造となり、はんだの熱疲労寿命と耐湿性を同時に向上させる。これに伴ない、モジュールの反りを抑え、かつ素子部の保護を兼ねた長寿命の半導体パワーモジュールを提供することができる。
Claims (4)
- 絶縁基板と、この絶縁基板上にはんだを介して固着された半導体チップと、この半導体チップ表面に接続されたワイヤと、前記半導体チップと前記ワイヤを含む収納部品の表面を覆う比較的軟らかい被覆樹脂と、これらの部品を収納するケースと、前記被覆樹脂の上に、前記被覆樹脂よりも硬い封止樹脂を充填した半導体パワーモジュールにおいて、
前記絶縁基板を、セラミック絶縁基板に直接アルミを接合した複合基板で形成し、
前記被覆樹脂を、前記ケースに収納された前記収納部品全体の表面に、ポリイミド系又はポリアミドイミド系の樹脂を散布又は塗布し、その後、硬化させて、前記収納部品の表面の実質的全域を50μm以下の厚さで覆う線膨張係数が60×10−6/℃以下で、室温(15〜20℃)におけるヤング率が3GPa以下のポリイミド系又はポリアミドイミド系の樹脂で形成し、
前記封止樹脂を、線膨張係数が14〜24×10−6/℃、室温(15〜20℃)におけるヤング率が3〜20GPaで、その中にシリコーン系ゴムの可撓化剤を、10±5mass%分散され、ガラス転移温度(Tg)が150℃以上のエポキシ系樹脂で形成したことを特徴とする半導体パワーモジュール。 - 請求項1において、前記半導体チップの表面に接続されたワイヤは、テープ又はリードフレームであることを特徴とする半導体パワーモジュール。
- 請求項1において、前記絶縁基板の他面に固着されたベース基板と、前記絶縁基板の外側で前記ベース基板に形成した溝を備えたことを特徴とする半導体パワーモジュール。
- 請求項1において、前記絶縁基板の一面に形成した電子部品搭載のための導電部と、この導電部に前記半導体チップを固着するはんだと、前記半導体チップの外側で前記導電部に形成した溝を備えたことを特徴とする半導体パワーモジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004208703A JP4319591B2 (ja) | 2004-07-15 | 2004-07-15 | 半導体パワーモジュール |
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JP2004208703A JP4319591B2 (ja) | 2004-07-15 | 2004-07-15 | 半導体パワーモジュール |
Publications (2)
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JP2006032617A JP2006032617A (ja) | 2006-02-02 |
JP4319591B2 true JP4319591B2 (ja) | 2009-08-26 |
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JP2004208703A Active JP4319591B2 (ja) | 2004-07-15 | 2004-07-15 | 半導体パワーモジュール |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103222053A (zh) * | 2010-09-24 | 2013-07-24 | 半导体元件工业有限责任公司 | 电路装置 |
CN104517913A (zh) * | 2013-09-30 | 2015-04-15 | 三菱电机株式会社 | 半导体装置及其制造方法 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007251076A (ja) * | 2006-03-20 | 2007-09-27 | Hitachi Ltd | パワー半導体モジュール |
JP4525636B2 (ja) * | 2006-06-09 | 2010-08-18 | 株式会社日立製作所 | パワーモジュール |
JP4957220B2 (ja) * | 2006-12-04 | 2012-06-20 | 株式会社デンソー | 電子パッケージ |
JP5340544B2 (ja) * | 2007-01-22 | 2013-11-13 | 株式会社デンソー | 電子装置およびその製造方法 |
JP4697475B2 (ja) | 2007-05-21 | 2011-06-08 | トヨタ自動車株式会社 | パワーモジュールの冷却器及びパワーモジュール |
JP4972503B2 (ja) * | 2007-09-11 | 2012-07-11 | 株式会社日立製作所 | 半導体パワーモジュール |
JP2009285810A (ja) * | 2008-05-30 | 2009-12-10 | Toshiba Corp | 半導体装置およびその製造方法 |
JP5556007B2 (ja) * | 2008-12-12 | 2014-07-23 | 株式会社デンソー | 電子装置 |
JP2011165871A (ja) | 2010-02-09 | 2011-08-25 | Denso Corp | 電子装置およびその製造方法 |
JP5395699B2 (ja) * | 2010-02-16 | 2014-01-22 | 株式会社東芝 | 半導体装置 |
JP5212417B2 (ja) | 2010-04-12 | 2013-06-19 | 三菱電機株式会社 | パワー半導体モジュール |
JP5638623B2 (ja) * | 2010-11-25 | 2014-12-10 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2012174996A (ja) * | 2011-02-23 | 2012-09-10 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
JP5974428B2 (ja) * | 2011-07-14 | 2016-08-23 | 三菱電機株式会社 | 半導体装置 |
JP5763467B2 (ja) * | 2011-08-08 | 2015-08-12 | 本田技研工業株式会社 | 電子装置の製造方法及び電子装置 |
JP5928485B2 (ja) | 2012-02-09 | 2016-06-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN104067388B (zh) * | 2012-03-22 | 2017-02-15 | 富士电机株式会社 | 带散热鳍片的半导体模块 |
CN104412382B (zh) * | 2012-07-05 | 2017-10-13 | 三菱电机株式会社 | 半导体装置 |
DE112012006692B4 (de) | 2012-07-11 | 2023-04-20 | Mitsubishi Electric Corporation | Verfahren zum Herstellen einer Halbleitervorrichtung |
JP5987719B2 (ja) * | 2013-02-13 | 2016-09-07 | 三菱電機株式会社 | 半導体装置 |
JP2014187135A (ja) * | 2013-03-22 | 2014-10-02 | Toyota Motor Corp | 半導体装置 |
JP2014187264A (ja) | 2013-03-25 | 2014-10-02 | Toshiba Corp | 半導体装置 |
DE112013007390B4 (de) | 2013-08-29 | 2020-06-25 | Mitsubishi Electric Corporation | Halbleitermodul, Halbleitervorrichtung und Fahrzeug |
WO2015104808A1 (ja) * | 2014-01-09 | 2015-07-16 | 株式会社日立製作所 | パワー半導体装置および電力変換装置 |
JP6252412B2 (ja) | 2014-09-10 | 2017-12-27 | 三菱電機株式会社 | 半導体装置 |
JP6525327B2 (ja) * | 2016-02-26 | 2019-06-05 | 三菱電機株式会社 | パワー半導体モジュール及びその製造方法 |
JP6627600B2 (ja) * | 2016-03-23 | 2020-01-08 | 三菱マテリアル株式会社 | パワーモジュールの製造方法 |
JP6743728B2 (ja) | 2017-03-02 | 2020-08-19 | 三菱電機株式会社 | 半導体パワーモジュール及び電力変換装置 |
WO2018184572A1 (zh) | 2017-04-07 | 2018-10-11 | 宁波舜宇光电信息有限公司 | 基于模制工艺的半导体封装方法和半导体装置 |
CN108695165A (zh) * | 2017-04-07 | 2018-10-23 | 宁波舜宇光电信息有限公司 | 基于模制工艺的半导体封装方法和半导体装置 |
JP6907697B2 (ja) * | 2017-05-18 | 2021-07-21 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2017201726A (ja) * | 2017-08-16 | 2017-11-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP6906228B2 (ja) * | 2017-08-18 | 2021-07-21 | ナミックス株式会社 | 半導体装置 |
GB2567746B (en) | 2017-08-24 | 2022-03-16 | Shindengen Electric Mfg | Semiconductor device |
JP6927117B2 (ja) * | 2018-03-29 | 2021-08-25 | 信越化学工業株式会社 | パワーモジュール |
JP7454129B2 (ja) | 2020-03-18 | 2024-03-22 | 富士電機株式会社 | 半導体装置 |
US20230361011A1 (en) * | 2022-05-04 | 2023-11-09 | Semiconductor Components Industries, Llc | Molded power modules |
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2004
- 2004-07-15 JP JP2004208703A patent/JP4319591B2/ja active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103222053A (zh) * | 2010-09-24 | 2013-07-24 | 半导体元件工业有限责任公司 | 电路装置 |
US9271397B2 (en) | 2010-09-24 | 2016-02-23 | Semiconductor Components Industries, Llc | Circuit device |
CN104517913A (zh) * | 2013-09-30 | 2015-04-15 | 三菱电机株式会社 | 半导体装置及其制造方法 |
US10104775B2 (en) | 2013-09-30 | 2018-10-16 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
CN104517913B (zh) * | 2013-09-30 | 2019-01-04 | 三菱电机株式会社 | 半导体装置及其制造方法 |
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