JP6906228B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6906228B2 JP6906228B2 JP2017158210A JP2017158210A JP6906228B2 JP 6906228 B2 JP6906228 B2 JP 6906228B2 JP 2017158210 A JP2017158210 A JP 2017158210A JP 2017158210 A JP2017158210 A JP 2017158210A JP 6906228 B2 JP6906228 B2 JP 6906228B2
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- semiconductor device
- resin
- semiconductor chip
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Description
〔1〕モールド樹脂層でモールドされた、半導体チップと基板とを含む半導体装置であって、
硬化したモールド樹脂層と基板との間に、モールド樹脂層と異なる厚さ200nm以下の樹脂層を有することを特徴とする、半導体装置。
〔2〕モールド樹脂層と基板との間に存在する樹脂層が、半導体チップ全周辺の長さを100%としたとき、30%以上の周辺に存在する、上記〔1〕記載の半導体装置。
〔3〕半導体チップが四辺形であり、モールド樹脂層と基板との間に存在する樹脂層が、少なくとも半導体チップの2辺に存在する、上記〔1〕または〔2〕記載の半導体装置。
〔4〕モールド樹脂層と基板との間に存在する樹脂層が、エポキシ樹脂およびアクリル樹脂からなる群より選択される少なくとも1種を含む、上記〔1〕〜〔3〕のいずれか記載の半導体装置。
〔5〕基板の表面が、ソルダーレジスト、窒化ケイ素、ポリイミドまたはケイ素である、上記〔1〕〜〔4〕のいずれか記載の半導体装置。
〔6〕半導体チップが、基板とフリップチップ形式で接続されている、上記〔1〕〜〔5〕のいずれか記載の半導体装置。
〔7〕半導体チップが、基板とフェースアップで接続されている、上記〔6〕記載の半導体装置。
〔8〕モールド樹脂層が、エポキシ樹脂である、上記〔1〕〜〔7〕のいずれか記載の半導体装置。
硬化したモールド樹脂層と基板との間に、モールド樹脂層と異なる厚さ200nm以下の樹脂層を有することを特徴とする。
半導体チップは、特に限定されないが、本発明の効果を発揮しやすい観点から、基板とフリップチップ形式(フェースダウン)で接続可能なものや、基板とフェースアップで接続可能なものであると、より好ましい。
基板は、特に限定されず、有機基板、無機基板共のいずれも使用することができる。有機基板としては、ガラス−エポキシ基板エポキシ樹脂、ポリイミド樹脂等が、挙げられる。無機基板としては、シリコン基板、セラミックス基板等が、挙げられる。なお、基板の表面は、ソルダーレジスト、窒化ケイ素、ポリイミドまたはケイ素であると、好ましい。
(MA)成分は、第1の樹脂に、硬モールド樹脂層(以下、第1の樹脂層という)を形成するモールド樹脂は、信頼性の観点から、液状エポキシ樹脂が、好ましい。モールド樹脂(以下、第1の樹脂という)としては、(MA)エポキシ樹脂、(MB)酸無水物硬化剤および(MC)無機フィラーを含む液状樹脂が、挙げられる。
モールド樹脂層と基板との間に存在するモールド樹脂層と異なる樹脂層(以下、第2の樹脂層という)を形成する樹脂(以下、第2の樹脂という)は、アンダーフィル剤と共通していてもよく、アンダーフィル剤と異なっていてもよい。モールド樹脂層の形成の容易さの観点から、アンダーフィル剤を半導体チップの周囲まで形成する方が、好ましい。なお、アンダーフィル剤を半導体チップの周囲まで形成する場合には、後供給型でも先供給型でもよい。なお、第2の樹脂が、アンダーフィル剤と異なっている場合のアンダーフィル剤には、従来使用されているアンダーフィル剤を使用することができる。
(1)潜在性硬化剤:室温では不活性の状態で、加熱することにより活性化して、硬化促進剤として機能する化合物であり、例えば、常温で固体のイミダゾール化合物;アミン化合物とエポキシ化合物との反応生成物(アミン−エポキシアダクト系)等の固体分散型アミンアダクト系潜在性硬化促進剤;アミン化合物とイソシアネート化合物または尿素化合物との反応生成物(尿素型アダクト系)等が、挙げられる。潜在性硬化剤は、(UB)成分と組み合わせて、第2の樹脂を低温硬化させることができる。
(2)シリカフィラー:最大粒径6um以下であることが好ましい。第2の樹脂100質量部に対して、20〜65質量部含有されると、好ましい。また、表面処理されていてもよい
(3)各種添加剤類
・カップリング剤:エポキシ基または(メタ)アクリレート基を含有するものが好ましい
・レオロジー調整剤:塗布適性、流動適性の調整に、使用することができる。
・分散剤、沈降防止剤:充填剤、着色剤の分散性向上、沈降防止のために使用することができる。
・消泡剤:消泡性調整に使用することができる。
・着色剤:着色に使用することができる。
表面調整剤:表面状態、濡れ性調整に使用することができる。
・エラストマー類:弾性調整に使用することができる。
・固形樹脂:粘度、靭性等の調整のため組成物として液状を保てる範囲内で使用することができる。
本発明の半導体装置は、第2の樹脂層が、チップ全周辺の長さを100%としたとき、30%以上の外側の周辺に存在すると、好ましい。
半導体チップには、Walts製半導体チップ(品名:CC80−0101JY)を、
基板には、Walts製基板(表1、2には、ガラエポと記載、品名:WALTS−KIT CC80−0102JY)、またはシリコン基板(表1、2には、シリコンと記載、長さ:10mm×幅:10mm×厚さ:725μm)を、
樹脂層含有樹脂(モールド樹脂層と異なる厚さ200nm以下の樹脂層(第2の樹脂層)に含有される樹脂)には、ナミックス製エポキシ系封止材(表1、2には、エポキシ樹脂と記載、品名:U8410−73C)、または以下の製造方法で製造したアクリル系封止剤(表1、2には、アクリル樹脂と記載)を使用した。
チップ実装方向のFUは、フェースアップを、FDは、フェースダウンを、示す。
基板表面のSRは、太陽ホールディングス製ソルダーレジスト(品名:PSR4000−AUS703)を、15μm厚で、
SiNは、窒化ケイ素を、5μm厚で、
PIは、住友ベークライト製ポリイミド(品名:CRC−6061C)を、0.1μm厚で、
形成した。
樹脂層の存在率は、第2の樹脂層の存在率を、工業用顕微鏡(オリンパス製、型番:STM7)で測定した。
樹脂層の厚さは、第2の樹脂層の厚さを、断面を作製した後、走査型電子顕微鏡(SEM、日立ハイテクノロジーズ製)で測定した。
半導体チップと基板を組立て、樹脂層含有樹脂を塗布した。これを、50℃のホットプレート上に放置し、放置時間により樹脂層の長さをコントロールした。つぎに、これを、150℃で、2時間、バッチオーブンに入れ、樹脂層含有樹脂を本硬化させ、基板上に厚さ200nm以下の樹脂層を有するデバイスを作製した。
半導体チップが実装されたデバイスで、本硬化した樹脂層の上に、モールド材を塗布した後、硬化させ、モールド材の硬化物を作製し、樹脂層とモールド材とのシェア強度を測定した。アイコ−エンジニアリング製卓上強度試験器(型番:1605HTP)を使用して、剪断強度(単位:MPa)を測定した。
実装されたデバイスを、30℃/60%RH 環境下に168時間放置し、リフローに3回通過させて、SATの透過法を用いてモールド部分の剥離を評価した。リフロー条件は、IPC/JEDEC J−STD−020に準拠した。
10、110 基板
11 基板の配線
20、120 半導体チップ
21 半導体チップの配線
122 半導体チップの全周辺
25 接続部
30 アンダーフィル剤
40,140 モールド樹脂層
50、150 モールド樹脂層と異なる厚さ200nm以下の樹脂層
Claims (9)
- モールド樹脂層でモールドされた、半導体チップと基板とを含む半導体装置であって、
硬化したモールド樹脂層と基板との間であり、かつ半導体チップの外側のみに、モールド樹脂層と異なる厚さ200nm以下の樹脂層を有することを特徴とする、半導体装置。 - モールド樹脂層でモールドされた、半導体チップと基板とを含む半導体装置であって、
硬化したモールド樹脂層と基板との間に、モールド樹脂層と異なる厚さ200nm以下の樹脂層を有することを特徴とする、半導体装置(ただし、半導体チップとモールド樹脂層との間に、モールド樹脂層と異なる樹脂層がある場合を除く)。 - モールド樹脂層と基板との間に存在する樹脂層が、半導体チップ全周辺の長さを100%としたとき、30%以上の周辺に存在する、請求項1または2記載の半導体装置。
- 半導体チップが四辺形であり、モールド樹脂層と基板との間に存在する樹脂層が、少なくとも半導体チップの2辺に存在する、請求項1〜3のいずれか1項記載の半導体装置。
- モールド樹脂層と基板との間に存在する樹脂層が、エポキシ樹脂およびアクリル樹脂からなる群より選択される少なくとも1種を含む、請求項1〜4のいずれか1項記載の半導体装置。
- 基板の表面が、ソルダーレジスト、窒化ケイ素、ポリイミドまたはケイ素である、請求項1〜5のいずれか1項記載の半導体装置。
- 半導体チップが、基板とフリップチップ形式で接続されている、請求項1〜6のいずれか1項記載の半導体装置。
- 半導体チップが、基板とフェースアップで接続されている、請求項6記載の半導体装置。
- モールド樹脂層が、エポキシ樹脂である、請求項1〜8のいずれか1項記載の半導体装置。
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