CN110892525B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110892525B
CN110892525B CN201880043652.XA CN201880043652A CN110892525B CN 110892525 B CN110892525 B CN 110892525B CN 201880043652 A CN201880043652 A CN 201880043652A CN 110892525 B CN110892525 B CN 110892525B
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resin layer
substrate
semiconductor device
resin
semiconductor chip
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CN110892525A (zh
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明道太树
发地丰和
星山正明
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Namics Corp
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Namics Corp
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Abstract

本发明的目的在于提供抑制模塑树脂与基板之间的剥离的半导体装置。所述半导体装置(1)，其特征在于，其是经由模塑树脂层(40)模塑的包含半导体芯片(20)和基板(10)的半导体装置(1)，所述半导体装置(1)在固化后的模塑树脂层(40)与基板(10)之间具有与模塑树脂层(40)不同的厚度200nm以下的树脂层(50)。在将芯片的总周长设为100％时，存在于模塑树脂层(40)与基板(10)之间的树脂层(50)优选存在于30％以上的周边。

Description

半导体装置
技术领域
本发明涉及一种半导体装置。尤其涉及以倒装芯片形式连接有半导体芯片和基板的半导体装置。
背景技术
近年来，作为能够应对电子设备的布线等的进一步的高密度化、高频化的半导体封装体的安装方式，利用的是倒装芯片接合。一般而言，在倒装芯片接合中，将形成于半导体芯片的焊料凸点和形成于基板的经焊料镀敷的布线进行软钎焊后，用被称作底部填充剂的绝缘性树脂对半导体芯片与基板的间隙进行密封。
通常，为了提高经倒装芯片接合的半导体封装体的可靠性，将半导体芯片和基板以软钎焊等接合后，向半导体芯片与基板的间隙填充作为热固性半导体树脂密封组合物的底部填充剂。之后，进一步用模塑树脂层将半导体芯片的周围进行模塑。
作为与模塑树脂层的形状有关的半导体装置的制造方法，为了提供印记的视觉辨认性良好且生产率良好的半导体装置的制造方法，在将半导体芯片及对该半导体芯片中产生的热进行散热的散热板连同将该半导体芯片与外部连接的导线一起用树脂制的封装体一体地模塑而成的半导体装置的制造方法中，报道了一种半导体装置的制造方法，其特征在于，具有如下工序：在上述散热板表面形成树脂膜的树脂膜形成工序；以及通过利用热线局部地除去上述树脂膜、并局部地暴露出上述散热板而施以印记的印记工序(专利文献1)。
另外，在双面散热型的半导体装置中，为了防止因基于静电的静电感应而在内部电路流入电流，报道了一种半导体装置，其特征在于，其具备半导体元件、以夹持上述半导体元件的方式配置于上述半导体元件的双面且与上述半导体元件电连接-热连接的一对散热板、和将上述半导体元件及上述两散热板进行密封的模塑树脂，在上述两散热板的各自的外表面上设有具有电绝缘性的绝缘层并且该绝缘层从上述模塑树脂露出的半导体装置中，预先在各自的上述绝缘层的从上述模塑树脂露出的面上安装具有导电性的导体层，位于一个上述散热板侧的上述导体层和位于另一个上述散热板侧的上述导体层经由具有导电性的连接构件进行电连接(专利文献2)。
另外，在一并进行树脂密封后，未搭载半导体芯片的不良器件区域的半导体装置变得不明确，因此在挑选工序中，变成进行所有半导体装置的挑选，导致该挑选工序耗费的时间变长，并且导致半导体装置的制造效率变低，为了解决上述问题等，报道了一种半导体装置的制造方法，其特征在于，其具备如下工序：准备具有多个器件区域的多模基板(多数個取り基板)和搭载于上述多个器件区域的半导体芯片的工序；在上述器件区域搭载上述半导体芯片的工序；利用连接构件将上述半导体芯片的表面电极和与之对应的上述器件区域的接合电极加以连接的工序；对上述器件区域的不良进行检测的工序；利用模塑树脂一并覆盖上述多模基板中的多个器件区域，将上述半导体芯片进行树脂密封，并且形成一并密封部的工序；对检测到上述不良的器件区域的一并密封部表面标记不良标记的工序；沿着切割线对每个上述器件区域分割上述多模基板及上述一并密封部，进行单片化，形成各个密封部的工序(专利文献3)。
然而，利用上述的制造方法制造的半导体装置、上述的半导体装置均存在有时模塑树脂与基板的密合性不充分、导致在模塑树脂与基板之间发生剥离的问题。
现有技术文献
专利文献
专利文献1：日本特开平6-177268号公报
专利文献2：日本特开2008-166333号公报
专利文献3：日本特开2002-305266号公报
发明内容
发明要解决的课题
本发明是鉴于如上所述的问题点而完成的发明，其目的在于提供抑制模塑树脂与基板之间的剥离的半导体装置。
用于解决课题的手段
本发明人等为了解决上述的课题而进行深入研究，通过在固化后的模塑树脂层与基板之间形成与模塑树脂层不同的厚度200nm以下的树脂层，从而可以得到抑制模塑树脂与基板之间的剥离的半导体装置。
本发明涉及通过具有以下的构成而解决了上述问题的半导体装置。
〔1〕一种半导体装置，其特征在于，其是经由模塑树脂层模塑的包含半导体芯片和基板的半导体装置，所述半导体装置在固化后的模塑树脂层与基板之间具有与模塑树脂层不同的厚度200nm以下的树脂层。
〔2〕根据上述〔1〕所述的半导体装置，其中，在将半导体芯片的总周长设为100％时，存在于模塑树脂层与基板之间的树脂层存在于30％以上的周边。
〔3〕根据上述〔1〕或〔2〕所述的半导体装置，其中，半导体芯片为四边形，存在于模塑树脂层与基板之间的树脂层至少存在于半导体芯片的两边。
〔4〕根据上述〔1〕～〔3〕中任一项所述的半导体装置，其中，存在于模塑树脂层与基板之间的树脂层包含选自环氧树脂及丙烯酸树脂中的至少1种。
〔5〕根据上述〔1〕～〔4〕中任一项所述的半导体装置，其中，基板的表面为阻焊剂、氮化硅、聚酰亚胺或硅。
〔6〕根据上述〔1〕～〔5〕中任一项所述的半导体装置，其中，半导体芯片以倒装芯片形式与基板连接。
〔7〕根据上述〔6〕所述的半导体装置，其中，半导体芯片以面朝上与基板连接。
〔8〕根据上述〔1〕～〔7〕中任一项所述的半导体装置，其中，模塑树脂层为环氧树脂。
发明效果
根据本发明〔1〕，可以提供抑制模塑树脂与基板之间的剥离的可靠性高的半导体装置。
附图说明
图1是本发明的半导体装置的截面的示意图的一例。
图2是本发明的半导体装置的上表面的示意图的一例。
图3是本发明的半导体装置的上表面的示意图的一例。
具体实施方式
本发明的半导体装置，其特征在于，其是经由模塑树脂层模塑的、包含半导体芯片和基板的半导体装置，所述半导体装置在固化后的模塑树脂层与基板之间具有与模塑树脂层不同的厚度200nm以下的树脂层。
图1中示出本发明的半导体装置的截面的示意图的一例。另外，图2中示出本发明的半导体装置的上表面的示意图的一例。在图2中，模塑树脂层40是透过的情况。在图1、2中，本发明的半导体装置1是经由模塑树脂层40模塑的、包含在上侧的半导体芯片20和在下侧的基板10的半导体装置1，所述半导体装置1在固化后的模塑树脂层40与基板10之间具有在从半导体芯片20的上方观察时处于半导体芯片20的外侧的与模塑树脂层40不同的厚度200nm以下的树脂层50。予以说明，图1是半导体芯片20以面朝下的倒装芯片形式与基板10连接的例子，半导体芯片的布线21和基板的布线11被连接部25连接。予以说明，当然，半导体芯片和基板的上下可以颠倒，半导体芯片和基板的位置关系并无限定。
〔半导体芯片〕
半导体芯片并无特别限定，从容易发挥本发明效果的观点出发，更优选能够以倒装芯片形式(面朝下)与基板连接的半导体芯片、或能够以面朝上与基板连接的半导体芯片。
〔基板〕
基板并无特别限定，有机基板、无机基板均可使用。作为有机基板，可列举玻璃-环氧树脂基板、环氧树脂基板、聚酰亚胺树脂等。作为无机基板，可列举硅基板、陶瓷基板等。予以说明，基板的表面优选为阻焊剂、氮化硅、聚酰亚胺或硅。
〔模塑树脂层〕
关于(MA)成分，从可靠性的观点出发，在第1树脂上形成硬模塑树脂层(以下称作第1树脂层)的模塑树脂优选为液状环氧树脂。作为模塑树脂(以下称作第1树脂)，可列举包含(MA)环氧树脂、(MB)酸酐固化剂及(MC)无机填料的液状树脂。
(MA)成分赋予固化性、耐热性、粘接性，对固化后的第1树脂赋予耐久性。作为(MA)成分，可列举萘型环氧树脂、脂肪族环状环氧树脂、氨基酚系环氧树脂、双酚A型环氧树脂、溴代双酚A型环氧树脂、双酚F型环氧树脂、联苯型环氧树脂、酚醛型环氧树脂、醚系或聚醚系环氧树脂、含环氧乙烷环的环氧树脂等，从第1树脂的玻璃化转变温度、耐回流焊性及耐湿性的观点出发，优选萘型环氧树脂、脂肪族环状环氧树脂、氨基酚系环氧树脂、双酚F型环氧树脂、双酚A型环氧树脂。(MA)成分可以单独使用，也可以并用2种以上。
(MB)成分具有使(MA)成分固化的能力。作为(MB)成分，可列举四氢邻苯二甲酸酐、六氢邻苯二甲酸酐、甲基四氢邻苯二甲酸酐、甲基六氢邻苯二甲酸酐、甲基纳迪克酸酐、氢化甲基纳迪克酸酐、三烷基四氢邻苯二甲酸酐、甲基环己烯四羧酸二酐、邻苯二甲酸酐、偏苯三酸酐、均苯四酸酐、二苯甲酮四羧酸二酐、乙二醇双脱水偏苯三酸酯、甘油双(脱水偏苯三酸酯)单乙酸酯、十二碳烯基无水琥珀酸、脂肪族二元酸聚酸酐、氯菌酸酐、甲基丁烯基四氢邻苯二甲酸酐、烷基化四氢邻苯二甲酸酐、甲基HIMIC酸酐、被烯基取代后的琥珀酸酐、戊二酸酐等，优选甲基丁烯基四氢邻苯二甲酸酐。作为市售品，可列举三菱化学制酸酐(等级：YH306、YH307)、日立化成工业制3或4-甲基-六氢邻苯二甲酸酐(品名：HN-5500)等。(MB)成分可以单独使用，也可以并用2种以上。
利用(MC)成分，可以调整固化后的第1树脂的热膨胀系数、弹性模量。作为(MC)成分，可列举：胶体二氧化硅、疏水性二氧化硅、微细二氧化硅、纳米二氧化硅等二氧化硅；丙烯酸珠、玻璃珠、聚氨酯珠、膨润土、乙炔黑、科琴黑等。从第1树脂的粘度、流动性的观点出发，(MC)成分包含至少2种平均粒径(在不为粒状的情况下，为其平均最大径)的无机填料。在此，平均粒径是指中值粒径(d50)，包含至少2种平均粒径的无机填料是指包含至少2种以上中值粒径(d50)不同的无机填料。从使(MC)成分均匀分散的使第1树脂的流动性优异等理由出发，(MC)成分的至少1种优选包含平均粒径25～100μm的无机填料，(MC)成分更优选至少包含平均粒径25～100μm的无机填料和平均粒径0.5～20μm的无机填料。进一步优选使(MC)成分至少包含平均粒径25～100μm的无机填料、平均粒径10～20μm的无机填料及平均粒径0.5～7μm的无机填料。若不足0.5μm，则有时第1树脂的粘度上升而使流动性变差。若超过100μm，则有可能难以使(MC)成分均匀地存在于第1树脂中。作为市售品，可列举Tokuyama制二氧化硅填料(品名：SE-40、平均粒径：50μm)、龙森制二氧化硅填料(品名：MSV25G、平均粒径：20μm)、龙森制二氧化硅填料(品名：MLV-2114、平均粒径：15μm)、ADMATECHS制二氧化硅填料(品名：SO-E5、平均粒径：2μm)、ADMATECHS制二氧化硅(制品名：SO-E2、平均粒径：0.5μm)等。在此，(MC)成分的平均粒径利用Beckman Coulter公司制激光散射/衍射式粒度分布测定装置(型号：LS13 320)来测定。(MC)成分可以单独使用，也可以并用2种以上。
(MB)成分的酸酐当量优选为(MA)成分的环氧当量的0.6～1.1倍，在不足0.6倍时，(MA)成分的固化容易变得不充分，或者容易导致空隙的产生或回流焊试验后的第1树脂的分层的产生。另一方面，即使(MB)成分的酸酐当量超过1.1倍，也容易导致空隙的产生、回流焊试验后的第1树脂的分层的产生。
(MC)成分相对于第1树脂100质量份优选为80～91质量份。在不足80质量份时，固化后的成型物的翘曲容易变大，若超过91质量份，则液状树脂组合物的粘度容易变得过高或者有时不能成为液状。另外，(MC)成分的平均粒径25～100μm的无机填料相对于第1树脂100质量份优选为50～85质量份，平均粒径0.5～20μm的无机填料相对于第1树脂100质量份优选为5～30质量份。在平均粒径0.5～20μm的无机填料中，更优选的是：平均粒径10～20μm的无机填料及平均粒径0.5～7μm的无机填料分别相对于第1树脂100质量份为0～30质量份，且平均粒径10～20μm的无机填料及平均粒径0.5～7μm的无机填料的合计相对于第1树脂100质量份为5～30质量份。
作为混合(MA)成分、(MB)成分及(MC)成分的装置，可列举行星式搅拌器、擂溃机等。
将模塑树脂利用涂敷器等进行涂布，并将基板上的半导体芯片的上表面及周围进行模塑，形成模塑树脂层。
〔存在于模塑树脂层与基板之间的与模塑树脂层不同的树脂层〕
形成存在于模塑树脂层与基板之间的与模塑树脂层不同的树脂层(以下称作第2树脂层)的树脂(以下称作第2树脂)，可以与底部填充剂通用，也可与底部填充剂不同。从模塑树脂层的形成容易性的观点出发，优选将底部填充剂形成至半导体芯片的周围。予以说明，当将底部填充剂形成至半导体芯片的周围的情况下，可以为后供给型，也可以为先供给型。予以说明，第2树脂与底部填充剂不同时的底部填充剂可以使用以往所使用的底部填充剂。
第2树脂包含(UA)热固性树脂。
就作为(UA)成分的热固性树脂而言，优选为选自环氧树脂及丙烯酸树脂中的至少1种。若包含环氧树脂作为(UA)成分，则能够确保对被粘物的粘接力，故特别优选。作为环氧树脂，可列举液状双酚A型环氧树脂、液状双酚F型环氧树脂、液状萘型环氧树脂、液状氢化双酚型环氧树脂、液状脂环式环氧树脂、液状醇醚型环氧树脂、液状环状脂肪族型环氧树脂、液状芴型环氧树脂、液状硅氧烷系环氧树脂等，从固化性、耐热性、粘接性、耐久性的观点出发，优选液状双酚A型环氧树脂、液状双酚F型环氧树脂、液状硅氧烷系环氧树脂、氨基酚型环氧树脂。另外，从粘度调整的观点出发，环氧当量优选80～250g/eq。作为市售品，可列举新日铁化学制双酚F型环氧树脂(品名：YDF8170)、新日铁化学制双酚A型环氧树脂(品名：YD8125)、DIC制萘型环氧树脂(品名：HP4032D)、信越化学制硅氧烷系环氧树脂(品名：TSL9906)、三菱化学制氨基酚型环氧树脂(等级：JER630、JER630LSD)等。另外，环氧树脂可以使用固态的环氧树脂。(UA)成分可以单独使用，也可以并用2种以上。
(UA)成分的丙烯酸树脂可以对固化后的树脂组合物赋予透明性和适度的硬度。该(UA)成分为丙烯酸酯单体和/或甲基丙烯酸酯单体、或者它们的低聚体。作为能够在本发明中使用的丙烯酸酯单体和/或甲基丙烯酸酯单体、或者它们的低聚体，可列举：三(2-羟基乙基)异氰脲酸酯的二丙烯酸酯和/或二甲基丙烯酸酯；三(2-羟基乙基)异氰脲酸酯三丙烯酸酯和/或三甲基丙烯酸酯；三羟甲基丙烷三丙烯酸酯和/或三甲基丙烯酸酯、或者其低聚体；季戊四醇三丙烯酸酯和/或三甲基丙烯酸酯、或者其低聚体；二季戊四醇的聚丙烯酸酯和/或聚甲基丙烯酸酯；三(丙烯酰氧基乙基)异氰脲酸酯；己内酯改性三(丙烯酰氧基乙基)异氰脲酸酯；己内酯改性三(甲基丙烯酰氧基乙基)异氰脲酸酯；烷基改性二季戊四醇的聚丙烯酸酯和/或聚甲基丙烯酸酯；己内酯改性二季戊四醇的聚丙烯酸酯和/或聚甲基丙烯酸酯等。作为(UA)成分的市售品，可列举DAICEL-ALLNEX株式会社制聚酯丙烯酸酯(品名：EBECRYL810)、东亚合成株式会社制聚酯丙烯酸酯(品名：M7100)。(UA)成分可以单独使用，也可以并用2种以上。
在(UA)成分为环氧树脂的情况下，第2树脂包含(UB)固化剂。作为(UB)成分，可列举胺系固化剂、酸酐系固化剂、酚系固化剂等，从绝缘性树脂组合物的耐回流焊性及耐湿性的观点出发，优选为胺系固化剂。酸酐系固化剂如上述所示。
作为胺系固化剂，可列举例如：脂肪族聚胺；芳香族胺；聚氨基酰胺、聚氨基酰亚胺、聚氨基酯及聚氨基尿素等改性聚胺；叔胺系；咪唑系；酰肼系；二氰酰胺系；三聚氰胺系的化合物等，优选芳香族胺系化合物。
芳香族胺系化合物更优选包含具有1个芳香族环的芳香族胺化合物和/或具有2个芳香族环的芳香族胺化合物。
作为具有1个芳香族环的芳香族胺化合物，可列举例如间苯二胺等。作为具有2个芳香族环的芳香族胺化合物，可列举二氨基二苯基甲烷、二氨基二苯基砜等。
作为酚系固化剂，可以使用例如甲阶型或酚醛清漆型酚醛树脂，可列举：烷基甲阶型、烷基酚醛清漆型、芳烷基酚醛清漆型的酚醛树脂；二甲苯树脂；烯丙基酚醛树脂等。作为数均分子量，优选为220～1000，更优选为220～500。在烷基甲阶型或烷基酚醛清漆型酚醛树脂的情况下，作为烷基，可以使用碳原子数1～18的烷基，优选如乙基、丙基、丁基、戊基、己基、辛基、壬基、癸基那样的碳原子数2～10的烷基。
(UB)成分可以单独使用，也可以并用2种以上。
从可靠性的观点出发，(UA)成分相对于无机填充材料100质量份优选为5～900质量份。
从可靠性的观点出发，(UB)成分相对于UA成分100质量份优选为5～150质量份。
第2树脂可以根据需要进一步包含以下的成分。
(1)潜在性固化剂：其是通过以在室温下不具活性的状态进行加热而活化并作为固化促进剂发挥功能的化合物，可列举例如：在常温下为固体的咪唑化合物；胺化合物与环氧化合物的反应生成物(胺-环氧加合物系)等固体分散型胺加合物系潜在性固化促进剂；胺化合物与异氰酸酯化合物或脲化合物的反应生成物(脲型加合物系)等。潜在性固化剂可以与(UB)成分组合而使第2树脂低温固化。
(2)二氧化硅填料：优选为最大粒径6um以下。相对于第2树脂100质量份，优选含有20～65质量份。另外，可以对其进行表面处理。
(3)各种添加剂类
·偶联剂：优选含有环氧基或(甲基)丙烯酸酯基的偶联剂。
·流变调整剂：可以用于调整涂布适应性、流动适应性。
·分散剂、抗沉降剂：可以为了提高填充剂、着色剂的分散性和防止沉降而使用。
·消泡剂：可以用于调整消泡性。
·着色剂：可以用于着色。
·表面调整剂：可以用于调整表面状态、润湿性。
·弹性体类：可以用于调整弹性。
·固形树脂：可以为了调整粘度、韧性等而作为组合物在保持液状的范围内使用。
如上所述，作为第2树脂层，在将底部填充剂形成至半导体芯片的周围的情况下，可以为后供给型，也可以为先供给型。作为形成第2树脂层的方法，可列举基于涂敷器等的涂布、干燥。
第2树脂层的厚度为200nm以下。若第2树脂层的厚度超过200nm，则无法充分地抑制模塑树脂与基板之间的剥离。
〔半导体装置〕
本发明的半导体装置优选的是：在将芯片的总周长设为100％时，第2树脂层存在于30％以上的外侧的周边。
半导体芯片为四边形，从抑制模塑树脂与基板之间的剥离的观点出发，存在于模塑树脂层与基板之间的树脂层优选在从半导体芯片的上方观察时至少存在于半导体芯片的两边的外侧，更优选存在于4边。
另外，从抑制模塑树脂与基板之间的剥离的观点出发，第2树脂层的面积优选为半导体芯片的面积的0.5～50％。
图3中示出本发明的半导体装置的上表面的示意图的一例。在图3中，模塑树脂层40是透过的情况。如图3所示，半导体装置100优选的是：在将以一点划线表示的芯片全周边122的长度设为100％时，第2树脂层150存在于30％以上的周边(半导体芯片的外侧)。另外，半导体芯片120为四边形，从抑制模塑树脂层140与基板110之间的剥离的观点出发，存在于模塑树脂层140与基板110之间的树脂层150优选至少存在于半导体芯片120的两边的外侧。另外，从抑制模塑树脂层140与基板之间的剥离的观点出发，第2树脂层150的面积优选为半导体芯片1(7mm□)的面积的0.5～50％。
半导体装置通过在形成第2树脂层后形成第1树脂层来制作。
实施例
以下，利用实施例对本发明进行说明，但是，本发明并不受这些实施例的限定。予以说明，在以下的实施例中，份、％只要没有特别说明均表示质量份、质量％。
表1、2记载的半导体芯片使用Walts制半导体芯片(品名：CC80-0101JY)，基板使用Walts制基板(在表1、2中记载为玻璃环氧树脂、品名：WALTS-KIT CC80-0102JY)或硅基板(在表1、2中记载为硅、长度：10mm×宽度：10mm×厚度：725μm)，树脂层含有的树脂(与模塑树脂层不同的厚度200nm以下的树脂层(第2树脂层)中所含有的树脂)使用纳美仕制环氧系密封材料(在表1、2中记载为环氧树脂、品名：U8410-73C)或利用以下的制造方法制造的丙烯酸系密封剂(在表1、2中记载为丙烯酸树脂)。
丙烯酸系密封材料通过在将新中村化学工业株式会社制丙烯酸树脂(品名：A-DCP)50份、新中村化学工业株式会社制丙烯酸树脂(品名：ABE-300)50份、日油株式会社制聚合引发剂(品名：Perbutyl P)1份及ADMATECHS株式会社制无机填充材料(品名：SO-E2)135份用三辊机进行混炼后进行真空脱泡来制备。
模塑材料使用纳美仕制环氧系模塑材料(在表1、2中记载为环氧系模塑材料、品名：G8345-6)。
芯片安装方向的FU表示面朝上，FD表示面朝下。
基板表面的SR是由TAIYO HOLDINGS制阻焊剂(品名：PSR4000-AUS703)以15μm的厚度形成，SiN是由氮化硅以5μm的厚度形成，PI是由住友电木制聚酰亚胺(品名：CRC-6061C)以0.1μm的厚度形成。
关于树脂层的存在率，用工业用显微镜(奥林巴斯制、型号：STM7)测定了第2树脂层的存在率。
关于树脂层的厚度，制作截面后，用扫描型电子显微镜(SEM、Hitachi High-Technologies制)测定了第2树脂层的厚度。
〔实施例1～10、比较例1～2〕
组装半导体芯片和基板，涂布树脂层含有的树脂。将其放置于50℃的热板上，利用放置时间来控制树脂层的长度。接着，将其在150℃的间歇式烘箱内放置2小时，使树脂层含有的树脂进行主固化，制作在基板上具有厚度200nm以下的树脂层的器件。
〔密合性的评价〕
在安装有半导体芯片的器件中，在经主固化的树脂层上涂布模塑材料后，使其固化，制作模塑材料的固化物，测定树脂层和模塑材料的抗剪强度。使用AIKOH ENGINEERING制台式强度试验器(型号：1605HTP)，测定剪切强度(单位：MPa)。
〔可靠性的评价〕
将所安装的器件在30℃/60％RH环境中放置168小时，使其3次通过回流焊，使用SAT的透过法，评价了模塑部分的剥离。回流焊条件依据IPC/JEDEC J-STD-020。
[表1]
Figure BDA0002341146580000121
[表2]
Figure BDA0002341146580000122
由表1～2可知：在全部的实施例1～10中，密合性、可靠性良好。与此相对，在无第2树脂层的比较例1和第2树脂层过厚的比较例2中，可靠性差。
产业上的可利用性
本发明可以提供模塑树脂与基板之间的剥离被抑制的半导体装置，并且非常有用。
符号说明
1、100       半导体装置
10、110      基板
11          基板的布线
20、120      半导体芯片
21          半导体芯片的布线
122         半导体芯片的全周边
25          连接部
30          底部填充剂
40、140      模塑树脂层
50、150      与模塑树脂层不同的厚度200nm以下的树脂层

Claims (8)

1.一种半导体装置，其特征在于，其是经由模塑树脂层模塑的包含半导体芯片和基板的半导体装置，所述半导体装置在固化后的模塑树脂层与基板之间具有与模塑树脂层不同的厚度200nm以下的树脂层，所述厚度200nm以下的树脂层不与所述半导体芯片接触，所述厚度200nm以下的树脂层的底面和所述基板的表面接触。
2.根据权利要求1所述的半导体装置，其特征在于，在将半导体芯片的总周长设为100％时，存在于模塑树脂层与基板之间的树脂层存在于30％以上的周边。
3.根据权利要求1或2所述的半导体装置，其特征在于，半导体芯片为四边形，存在于模塑树脂层与基板之间的树脂层至少存在于半导体芯片的两边。
4.根据权利要求1或2所述的半导体装置，其特征在于，存在于模塑树脂层与基板之间的树脂层，包含选自环氧树脂及丙烯酸树脂中的至少1种。
5.根据权利要求1或2所述的半导体装置，其特征在于，基板的表面为阻焊剂、氮化硅、聚酰亚胺或硅。
6.根据权利要求1或2所述的半导体装置，其特征在于，半导体芯片以倒装芯片形式与基板连接。
7.根据权利要求5所述的半导体装置，其特征在于，半导体芯片以面朝上与基板连接。
8.根据权利要求1或2所述的半导体装置，其特征在于，模塑树脂层为环氧树脂。
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