TWI761578B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI761578B
TWI761578B TW107128743A TW107128743A TWI761578B TW I761578 B TWI761578 B TW I761578B TW 107128743 A TW107128743 A TW 107128743A TW 107128743 A TW107128743 A TW 107128743A TW I761578 B TWI761578 B TW I761578B
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Taiwan
Prior art keywords
resin layer
resin
substrate
semiconductor device
semiconductor
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TW107128743A
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English (en)
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TW201913918A (zh
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明道太樹
発地豊和
星山正明
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日商納美仕股份有限公司
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Publication of TW201913918A publication Critical patent/TW201913918A/zh
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Abstract

本發明之目的在於提供一種半導體裝置，其係抑制壓模樹脂與基板之間的剝離。 　　半導體裝置(1)係經壓模樹脂層(40)所模製之包含半導體晶片(20)與基板(10)的半導體裝置(1)，其特徵為：於經硬化的壓模樹脂層(40)與基板(10)之間，具有與壓模樹脂層(40)不同之厚度200nm以下的樹脂層(50)。當晶片全周邊之長度為100%時，存在於壓模樹脂層(40)與基板(10)之間的樹脂層(50)較佳為存在於30%以上的周邊。

Description

半導體裝置
本發明關於半導體裝置。特別地，關於以覆晶形式連接半導體晶片與基板之半導體裝置。
近年來，作為能對應於電子機器的配線等之更高密度化、高頻化的半導體封裝之安裝方式，利用覆晶接合。一般而言，於覆晶接合中，將在半導體晶片上所形成的焊料凸塊與在基板上所形成的焊料鍍敷配線予以焊接後，以被稱為底部填充劑的絕緣性樹脂密封半導體晶片與基板之間隙。
通常，為了提高經覆晶接合的半導體封裝之可靠性，於以焊接等接合半導體晶片與基板後，在半導體晶片與基板之間隙中，填充熱硬化性半導體樹脂密封組成物的底部填充劑。再者，其後以壓模樹脂層模製半導體晶片之周圍。
作為與壓模樹脂層之形狀有關的半導體裝置之製造方法，有報告一種半導體裝置之製造方法，其係以提供印記的視覺辨認性良好，且生產性良好的半導體裝置之製造方法為目的，將半導體晶片及能散熱該半導體晶片所產生的熱之散熱板及連接該半導體晶片與外部的引線，一起以樹脂製的封裝一體地模製而成的半導體裝置之製造方法，其特徵為具有：於前述散熱板表面上形成樹脂膜之樹脂膜形成步驟，及藉由熱線局部地去除前述樹脂膜，藉由局部地露出前述散熱板，進行蓋印之蓋印步驟(專利文獻1)。
又，於兩面散熱型的半導體裝置中，以防止因靜電的靜電感應而電流在內部電路中流動者為目的，有報告一種半導體裝置，其具備：半導體元件，以夾住前述半導體元件之方式配置於前述半導體元件之兩面，且與前述半導體元件電性地・熱地連接續之一對散熱板，及將前述半導體元件及前述兩散熱板予以密封之壓模樹脂；於前述兩散熱板各自之外面設置具有電絕緣性的絕緣層，同時此絕緣層係從前述壓模樹脂露出，其特徵為：在各自的前述絕緣層之從前述壓模樹脂所露出的面，安裝具有導電性的導體層，通過具有導電性的連續構件，電連接位於一個前述散熱板側的前述導體層與位於另一個前述散熱板側的前述導體層(專利文獻2)。
又，於成批進行樹脂密封後，由於未搭載半導體晶片的不良裝置區域之半導體裝置會成為不明，而於篩選步驟中，進行全部的半導體裝置之篩選，於此篩選步驟中所花費的時間會變長，半導體裝置的製造效率會變低，以解決如此的問題等為目的，有報告一種半導體裝置之製造方法，其特徵為具有：準備具有複數的裝置區域之多數個分割基板與搭載於前述複數的裝置區域之半導體晶片之步驟，於前述裝置區域上搭載前述半導體晶片之步驟，藉由連接構件連接前述半導體晶片之表面電極與對應於其的前述裝置區域之接合電極之步驟，檢測前述裝置區域的不良之步驟，藉由壓模樹脂成批覆蓋前述多數個分割基板中之複數的裝置區域，樹脂密封前述半導體晶片，同時形成成批密封部之步驟，在經檢測出前述不良的裝置區域之成批密封部表面上標識不良標記之步驟，及沿著切割線在每前述裝置區域，分割前述多數個分割基板及前述成批密封部而單片化，形成各個密封部之步驟(專利文獻3)。
然而，經上述製造方法所製造之半導體裝置、上述之半導體裝置，係皆有壓模樹脂與基板之密著性不充分之情況，有在壓模樹脂與基板之間發生剝離的問題。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開平6-177268號公報 　　[專利文獻2]日本特開2008-166333號公報 　　[專利文獻3]日本特開2002-305266號公報
[發明所欲解決的課題]
本發明係鑒於如上述之問題點而完成者，目的在於提供一種半導體裝置，其係抑制壓模樹脂與基板之間的剝離。 [解決課題的手段]
本發明者們為了解決上述課題而進行專心致力的檢討，可得到一種半導體裝置，其係藉由於經硬化的壓模樹脂層與基板之間，形成與壓模樹脂層不同之厚度200nm以下的樹脂層，而抑制壓模樹脂與基板之間的剝離。
本發明關於藉由具有以下之構成而解決上述問題之半導體裝置。 　　[1]一種半導體裝置，其係經壓模樹脂層所模製之包含半導體晶片與基板的半導體裝置，其特徵為：於經硬化的壓模樹脂層與基板之間，具有與壓模樹脂層不同之厚度200nm以下的樹脂層。 　　[2]如上述[1]記載之半導體裝置，其中當半導體晶片全周邊之長度為100%時，存在於壓模樹脂層與基板之間的樹脂層係存在於30%以上的周邊。 　　[3]如上述[1]或[2]記載之半導體裝置，其中半導體晶片為四邊形，存在於壓模樹脂層與基板之間的樹脂層係至少存在於半導體晶片的2邊。 　　[4]如上述[1]～[3]中任一項記載之半導體裝置，其中存在於壓模樹脂層與基板之間的樹脂層係包含選自由環氧樹脂及丙烯酸樹脂所成之群組的至少1種。 　　[5]如上述[1]～[4]中任一項記載之半導體裝置，其中基板之表面為阻焊劑、氮化矽、聚醯亞胺或矽。 　　[6]如上述[1]～[5]中任一項記載之半導體裝置，其中半導體晶片係以覆晶形式與基板連接。 　　[7]如上述[6]記載之半導體裝置，其中半導體晶片係以面朝上與基板連接。 　　[8]如上述[1]～[7]中任一項記載之半導體裝置，其中壓模樹脂層為環氧樹脂。 [發明的效果]
依照本發明[1]，可提供一種可靠性高之半導體裝置，其係抑制壓模樹脂與基板之間的剝離。
[實施發明的形態]
本發明之半導體裝置係經壓模樹脂層所模製之包含半導體晶片與基板的半導體裝置，其特徵為： 　　經硬化的壓模樹脂層與基板之間，具有與壓模樹脂層不同之厚度200nm以下的樹脂層。
圖1中顯示本發明之半導體裝置的剖面之概略圖的一例。又，圖2中顯示本發明之半導體裝置的上面之概略圖的一例。圖2中，壓模樹脂層40係透過的情況。圖1、2中，本發明之半導體裝置1係經壓模樹脂層40模製之包含在上側的半導體晶片20與在下側的基板10之半導體裝置1，於經硬化的壓模樹脂層40與基板10之間，從半導體晶片20之上來觀看時，在半導體晶片20之外側，具有與壓模樹脂層40不同之厚度200nm以下的樹脂層50。還有，圖1係半導體晶片20以面朝下之覆晶形式與基板10連接之例，半導體晶片之配線21與基板之配線11係被連接部25所連接。再者，當然地，半導體晶片與基板之上下亦可相反，不限定半導體晶片與基板之位置關係。
[半導體晶片] 　　半導體晶片係沒有特別的限定，但從容易發揮本發明的效果之觀點來看，更佳為以覆晶形式(面朝下)能與基板連接者，或以面朝上能與基板連接者。
[基板] 　　基板係沒有特別的限定，但有機基板、無機基板皆可使用。作為有機基板，可舉出玻璃-環氧基板環氧樹脂、聚醯亞胺樹脂等。作為無機基板，可舉出矽基板、陶瓷基板等。再者，基板之表面較佳為阻焊劑、氮化矽、聚醯亞胺或矽。
[壓模樹脂層] 　　(MA)成分係於第1樹脂中，形成硬壓模樹脂層(以下，稱為第1樹脂層)之壓模樹脂，從可靠性之觀點來看，較佳為液狀環氧樹脂。作為壓模樹脂(以下，稱為第1樹脂)，可舉出包含(MA)環氧樹脂、(MB)酸酐硬化劑及(MC)無機填料之液狀樹脂。
賦予硬化性、耐熱性、接著性，對於硬化後的第1樹脂，賦予耐久性。作為(MA)成分，可舉出萘型環氧樹脂、脂肪族環狀環氧樹脂、胺基苯酚系環氧樹脂、雙酚A型環氧樹脂、溴化雙酚A型環氧樹脂、雙酚F型環氧樹脂、聯苯型環氧樹脂、酚醛清漆型環氧樹脂、醚系或聚醚系環氧樹脂、含有環氧乙烷環的環氧樹脂等，從第1樹脂的玻璃轉移點、耐回焊性及耐濕性之觀點來看，較佳為萘型環氧樹脂、脂肪族環狀環氧樹脂、胺基苯酚系環氧樹脂、雙酚F型環氧樹脂、雙酚A型環氧樹脂。(MA)成分係可為單獨，也可併用2種以上。
(MB)成分具有(MA)成分之硬化能力。作為(MB)成分，可舉出四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐、甲基六氫鄰苯二甲酸酐、甲基納迪克酸酐、氫化甲基納迪克酸酐、三烷基四氫鄰苯二甲酸酐、甲基環己烯四羧酸二酐、鄰苯二甲酸酐、偏苯三酸酐、苯均四酸酐、二苯基酮四羧酸二酐、乙二醇雙脫水偏苯三酸酯、甘油雙(脫水偏苯三酸酯)單乙酸酯、十二烯基琥珀酸酐、脂肪族二元酸聚酐、氯橋酸酐、甲基丁烯基四氫鄰苯二甲酸酐、烷基化四氫鄰苯二甲酸酐、甲基腐植酸酐、經烯基取代的琥珀酸酐、戊二酸酐等，較佳為甲基丁烯基四氫鄰苯二甲酸酐。作為市售品，可舉出三菱化學製酸酐(等級：YH306、YH307)、日立化成工業製3或4-甲基-六氫鄰苯二甲酸(品名：HN-5500)等。(MB)成分係可為單獨，也可併用2種以上。
藉由(MC)成分，可調整硬化後的第1樹脂之熱膨脹係數或彈性模數。作為(MC)成分，可舉出膠體二氧化矽、疏水性二氧化矽、微細二氧化矽、奈米二氧化矽等之二氧化矽、丙烯酸珠、玻璃珠、胺基甲酸酯珠、膨土、乙炔黑、科琴黑等。從第1樹脂之黏度、流動性之觀點來看，(MC)成分包含至少2種類的平均粒徑(不是粒狀時，為其平均最大徑)之無機填料。此處，所謂的平均粒徑，就是指中值徑(d50)，所謂包含至少2種類的平均粒徑之無機填料，就是指包含至少2種類以上的中值徑(d50)不同的無機填料。從使(MC)成分均勻地分散，第1樹脂的流動性優異等之理由來看，(MC)成分之至少1種類較佳為包含平均粒徑25～100μm的無機填料，(MC)成分更佳為至少包含平均粒徑25～100μm的無機填料與平均粒徑0.5～20μm的無機填料。(C)成分尤佳為至少包含平均粒徑25～100μm的無機填料、平均粒徑10～20μm的無機填料及平均粒徑0.5～7μm的無機填料。若未達0.5μm，則有第1樹脂的黏度上升，流動性變差之虞。若超過100μm，則有難以使(C)成分均勻地存在於第1樹脂中之虞。作為市售品，可舉出TOKUYAMA製二氧化矽填料(品名：SE-40，平均粒徑：50μm)、龍森製二氧化矽填料(品名：MSV25G，平均粒徑：20μm)、龍森製二氧化矽填料(品名：MLV-2114，平均粒徑：15μm)、ADMATECHS製二氧化矽填料(品名：SO-E5，平均粒徑：2μm)、ADMATECHS製二氧化矽(製品名：SO-E2，平均粒徑：0.5μm)等。此處，(C)成分之平均粒徑係藉由Beckman Coulter公司製雷射散射・繞射式粒度分布測定裝置(型號：LS13 320)測定。(MC)成分係可為單獨，也可併用2種以上。
(MB)成分之酸酐當量較佳為(MA)成分的環氧當量之0.6～1.1倍，未達0.6倍時，(MA)成分之硬化容易變不充分，或會容易造成空隙發生或回焊試驗後的第1樹脂之脫層的發生。另一方面，(MB)成分之酸酐當量超過1.1倍，也會容易造成空隙發生、回焊試驗後的第1樹脂之脫層的發生。
相對於第1樹脂100質量份，(MC)成分較佳為80～91質量份。未達80質量份時，硬化後的成型物之翹曲容易變大，若超過91質量份，則有液狀樹脂組成物的黏度容易變過高，或不成為液狀之情況。又，相對於第1樹脂100質量份，(MC)成分之平均粒徑25～100μm的無機填料較佳為50～85質量份，相對於第1樹脂100質量份，平均粒徑0.5～20μm的無機填料較佳為5～30質量份。於平均粒徑0.5～20μm的無機填料中，平均粒徑10～20μm的無機填料及平均粒徑0.5～7μm的無機填料，各自相對於第1樹脂100質量份而言為0～30質量份，且平均粒徑10～20μm的無機填料及平均粒徑0.5～7μm的無機填料之合計係相對於第1樹脂100質量份而更佳為5～30質量份。
作為混合(MA)成分、(MB)成分及(MC)成分之裝置，可舉出行星式混合機、擂潰機等。
壓模樹脂係藉由分配器等塗佈，模製基板上的半導體晶片之上面及周圍，形成壓模樹脂層。
[與存在於壓模樹脂層與基板之間的壓模樹脂層不同之樹脂層] 　　形成與存在於壓模樹脂層與基板之間的壓模樹脂層不同之樹脂層(以下，稱為第2樹脂層)的樹脂(以下，稱為第2樹脂)，係可與底部填充劑共通，也可與底部填充劑不同。從壓模樹脂層的形成容易性之觀點來看，將底部填充劑形成到半導體晶片之周圍為止者較宜。再者，將底部填充劑形成到半導體晶片之周圍為止時，可為後供給型，也可為先供給型。再者，於第2樹脂為與底部填充劑不同情況的底部填充劑中，可使用習用的底部填充劑。
第2樹脂包含(UA)熱硬化性樹脂。
作為(UA)成分之熱硬化性樹脂，較佳為選自由環氧樹脂及丙烯酸樹脂所成之群組的至少1種。作為(UA)成分，若包含環氧樹脂，則由於可確保對於被附體的接著力而特佳。作為環氧樹脂，可舉出液狀雙酚A型環氧樹脂、液狀雙酚F型環氧樹脂、液狀萘型環氧樹脂、液狀氫化雙酚型環氧樹脂、液狀脂環式環氧樹脂、液狀醇醚型環氧樹脂、液狀環狀脂肪族型環氧樹脂、液狀茀型環氧樹脂、液狀矽氧烷系環氧樹脂等，從硬化性、耐熱性、接著性、耐久性之觀點來看，較佳為液狀雙酚A型環氧樹脂、液狀雙酚F型環氧樹脂、液狀矽氧烷系環氧樹脂、胺基苯酚型環氧樹脂。又，從黏度調整之觀點來看，環氧當量較佳為80～250g/eq。作為市售品，可舉出新日鐵化學製雙酚F型環氧樹脂(品名：YDF8170)、新日鐵化學製雙酚A型環氧樹脂(品名：YD8125)、DIC製萘型環氧樹脂(品名：HP4032D)、信越化學製矽氧烷系環氧樹脂(品名：TSL9906)、三菱化學製胺基苯酚型環氧樹脂(等級：JER630、JER630LSD)等。又，環氧樹脂亦可使用固態者。(UA)成分係可為單獨，也可併用2種以上。
(UA)成分之丙烯酸樹脂係可對於硬化後的樹脂組成物，賦予透明性或適度的硬度。此(UA)成分係丙烯酸酯單體及/或甲基丙烯酸酯單體、或此等之寡聚物。作為本發明中可使用的丙烯酸酯單體及/或甲基丙烯酸酯單體、或此等之寡聚物，可舉出參(2-羥基乙基)異三聚氰酸酯之二丙烯酸酯及/或二甲基丙烯酸酯；參(2-羥基乙基)異三聚氰酸酯三丙烯酸酯及/或三甲基丙烯酸酯；三羥甲基丙烷三丙烯酸酯及/或三甲基丙烯酸酯、或其寡聚物；季戊四醇三丙烯酸酯及/或三甲基丙烯酸酯、或其寡聚物；二季戊四醇之聚丙烯酸酯及/或聚甲基丙烯酸酯；參(丙烯醯氧基乙基)異三聚氰酸酯；己內酯改質參(丙烯醯氧基乙基)異三聚氰酸酯；己內酯改質參(甲基丙烯醯氧基乙基)異三聚氰酸酯；烷基改質二季戊四醇之聚丙烯酸酯及/或聚甲基丙烯酸酯；己內酯改質二季戊四醇之聚丙烯酸酯及/或聚甲基丙烯酸酯等。作為(UA)成分之市售品，可舉出DAICEL-ALLNEX股份有限公司製聚酯丙烯酸酯(品名：EBECRYL810)東亞合成股份有限公司製聚酯丙烯酸酯(品名：M7100)。(UA)成分係可為單獨，也可併用2種以上。
於(UA)成分為環氧樹脂時，第2樹脂包含(UB)硬化劑。作為(UB)成分，可舉出胺系硬化劑、酸酐系硬化劑、酚系硬化劑等，從絕緣性樹脂組成物的耐回焊性及耐濕性之觀點來看，較佳為胺系硬化劑。酸酐系硬化劑係如上述。
作為胺系硬化劑，例如可舉出脂肪族多胺；芳香族胺；聚胺基醯胺、聚胺基醯亞胺、聚胺基酯及聚胺基脲等之改質聚胺；三級胺系；咪唑系；醯肼系；二氰二胺系；三聚氰胺系之化合物等，較佳為芳香族胺系化合物。
芳香族胺系化合物更佳為包含具有1個芳香族環的芳香族胺化合物及/或具有2個芳香族環的芳香族胺化合物。
作為具有1個芳香族環的芳香族胺化合物，例如可舉出間苯二胺等。作為具有2個芳香族環的芳香族胺化合物，可舉出二胺基二苯基甲烷、二胺基二苯基碸等。
作為酚系硬化劑，例如可使用可溶酚醛型或酚醛清漆型酚樹脂，可舉出烷基可溶酚醛型、烷基酚醛清漆型、芳烷基酚醛清漆型的酚樹脂、二甲苯樹脂、烯丙基苯酚樹脂等。數量平均分子量較佳為220～1000，更佳為220～500。於烷基可溶酚醛型或烷基酚醛清漆型酚樹脂之情況，作為烷基，可使用碳數1～18者，較佳為如乙基、丙基、丁基、戊基、己基、辛基、壬基、癸基之碳數2～10者。
(UB)成分係可為單獨，也可併用2種以上。
從可靠性之觀點來看，相對於無機填充材100質量份，(UA)成分較佳為5～900質量份。
從可靠性之觀點來看，相對於UA成分100質量份，(UB)成分較佳為5～150質量份。
第2樹脂係視需要可進一步包含以下的成分。 　　(1)潛在性硬化劑：於室溫下為惰性之狀態，因加熱而活化，作為硬化促進劑之機能的化合物，例如可舉出常溫下固體的咪唑化合物；胺化合物與環氧化合物之反應生成物(胺-環氧加成物系)等之固體分散型胺加成物系潛在性硬化促進劑；胺化合物與異氰酸酯化合物或脲化合物之反應生成物(脲型加成物系)等。潛在性硬化劑係可與(UB)成分組合，而使第2樹脂低溫硬化。 　　(2)二氧化矽填料：較佳為最大粒徑6mm以下。相對於第2樹脂100質量份，較佳為含有20～65質量份。又，亦可被表面處理。 　　(3)各種添加劑類 　　・偶合劑：較佳為含有環氧基或(甲基)丙烯酸酯基者 　　・流變調整劑：可使用於塗佈適應性、流動適應性之調整。 　　・分散劑、抗沉降劑：可使用於填充劑、著色劑之分散性提高、沉降防止。 　　・消泡劑：可使用消泡性調整。 　　・著色劑：可使用於著色。 　　・表面調整劑：可使用表面狀態、潤濕性調整。 　　・彈性體類：可使用彈性調整。 　　・固形樹脂：可用於黏度、韌性等之調整，在作為組成物保持液狀之範圍內使用。
如上述，作為第2樹脂層，將底部填充劑形成到半導體晶片的周圍為止時，可為後供給型，也可為先供給型。作為形成第2樹脂層之方法，可舉出藉由分配器等的塗佈、乾燥。
第2樹脂層之厚度為200nm以下。若第2樹脂層之厚度超過200nm，則無法充分抑制壓模樹脂與基板之間的剝離。
[半導體裝置] 　　本發明之半導體裝置係當晶片全周邊之長度為100%時，第2樹脂層較佳為存在於30%以上之外側的周邊。
從半導體晶片為四邊形，壓模樹脂與基板之間的剝離抑制之觀點來看，存在於壓模樹脂層與基板之間的樹脂層，當從半導體晶片之上來觀看時，較佳為至少存在於半導體晶片的2邊之外側，更佳為存在於4邊。
又，從壓模樹脂與基板之間的剝離抑制之觀點來看，第2樹脂層之面積較佳為半導體晶片的面積之0.5～50%。
圖3中顯示本發明之半導體裝置的上面之概略圖的一例。圖3中，壓模樹脂層40為透過之情況。如圖3所示，半導體裝置100係當以一點虛線表示的晶片全周邊122之長度為100%時，第2樹脂層150較佳為存在於30%以上的周邊(半導體晶片之外側)。又，從半導體晶片120為四邊形，壓模樹脂層140與基板110之間的剝離抑制之觀點來看，存在於壓模樹脂層140與基板110之間的樹脂層150較佳為至少存在於半導體晶片120的2邊之外側。又，從壓模樹脂層140與基板之間的剝離抑制之觀點來看，第2樹脂層150之面積較佳為半導體晶片1(7mm□)之面積的0.5～50%。
半導體裝置係在形成第2樹脂層後，藉由形成第1樹脂層而製作。 [實施例]
以下，藉由實施例說明本發明，惟本發明不受此等所限定。再者，於以下之實施例中，份、%只要沒有預先指明，則表示質量份、質量%。
於表1、2中記載的半導體晶片中，使用Walts製半導體晶片(品名：CC80-0101JY)，於基板中，使用Walts製基板(表1、2中，記載為玻璃環氧，品名：WALTS-KIT CC80-0102JY)或矽基板(表1、2中，記載為矽，長度：10mm´寬度：10mm´厚度：725mm)，於樹脂層含有樹脂(與壓模樹脂層不同之厚度200nm以下的樹脂層(第2樹脂層)中所含有的樹脂)中，使用NAMICS製環氧系密封材(表1、2中，記載為環氧樹脂，品名：U8410-73C)或用以下之製造方法所製造的丙烯酸系密封劑(表1、2中，記載為丙烯酸樹脂)。
丙烯酸系密封材係以三輥磨機混煉新中村化學工業股份有限公司製丙烯酸樹脂(品名：A-DCP)50份、新中村化學工業股份有限公司製丙烯酸樹脂(品名：ABE-300)50份、日油股份有限公司製聚合開始劑(品名：Perbutyl P)1份及股份有限公司ADMATECHS公司製無機填充材(品名：SO-E2)135份後，真空脫泡而調製。
於壓模材中，使用NAMICS製環氧系壓模材(表1、2中，記載為環氧系壓模材，品名：G8345-6)。 　　晶片安裝方向之FU表示面朝上，FD表示面朝下。 　　基板表面之SR係以15μm厚形成TAIYO HOLDINGS製阻焊劑(品名：PSR4000-AUS703)， 　　SiN係以5μm厚形成氮化矽， 　　PI係以0.1μm厚形成住友電木製聚醯亞胺(品名：CRC-6061C)。 　　樹脂層之存在率係以工業用顯微鏡(OLYMPUS製，型號：STM7)測定第2樹脂層之存在率。 　　樹脂層之厚度係對於第2樹脂層之厚度，製作剖面後，以掃描型電子顯微鏡(SEM，日立高科技製)測定。
[實施例1～10、比較例1～2] 　　組裝半導體晶片與基板，塗佈樹脂層含有樹脂。將此放置在50℃的熱板上，藉由放置時間控制樹脂層之長度。接著，將此置入150℃的批式烘箱內2小時，使樹脂層含有樹脂正式硬化，而製作在基板上具有厚度200nm以下的樹脂層之裝置。
[密著性之評價] 　　於安裝有半導體晶片的裝置中，在經正式硬化的樹脂層之上，塗佈壓模材後，使其硬化，製作壓模材之硬化物，測定樹脂層與壓模材之抗剪強度。使用AIKOH ENGINEERING製桌上強度試驗器(型號：1605HTP)，測定剪切強度(單位：MPa)。
[可靠性之評價] 　　將經安裝的裝置在30℃/60%RH環境下放置168小時，通過回焊3次，使用SAT的透過法，評價模製部分的剝離。回焊條件係依據IPC/JEDEC J-STD-020。
[表1]
Figure 107128743-A0304-0001
[表2]
Figure 107128743-A0304-0002
如由表1～2可知，實施例1～10皆密著性、可靠性良好。相對於其，無第2樹脂層的比較例1與第2樹脂層過厚的比較例2係可靠性差。 [產業上的利用可能性]
本發明可提供一種半導體裝置，其抑制壓模樹脂與基板之間的剝離，非常地有用。
1、100‧‧‧半導體裝置10、110‧‧‧基板11‧‧‧基板之配線20、120‧‧‧半導體晶片21‧‧‧半導體晶片之配線122‧‧‧半導體晶片之全周邊25‧‧‧連接部30‧‧‧底部填充劑40、140‧‧‧壓模樹脂層50、150‧‧‧與壓模樹脂層不同之厚度200nm以下的樹脂層
圖1係本發明之半導體裝置的剖面之概略圖的一例。 　　圖2係本發明之半導體裝置的上面之概略圖的一例。 　　圖3係本發明之半導體裝置的上面之概略圖的一例。
1‧‧‧半導體裝置
10‧‧‧基板
11‧‧‧基板之配線
20‧‧‧半導體晶片
21‧‧‧半導體晶片之配線
25‧‧‧連接部
30‧‧‧底部填充劑
40‧‧‧壓模樹脂層
50‧‧‧與壓模樹脂層不同之厚度200nm以下的樹脂層

Claims (8)

  1. 一種半導體裝置，其係經壓模樹脂層所模製之包含半導體晶片與基板的半導體裝置，其特徵為：於經硬化的壓模樹脂層與基板之間，具有與壓模樹脂層不同之厚度200nm以下的樹脂層，前述樹脂層不與前述半導體晶片接觸。
  2. 如請求項1之半導體裝置，其中當半導體晶片全周邊之長度為100%時，存在於壓模樹脂層與基板之間的樹脂層係存在於30%以上的周邊。
  3. 如請求項1或2之半導體裝置，其中半導體晶片為四邊形，存在於壓模樹脂層與基板之間的樹脂層係至少存在於半導體晶片的2邊。
  4. 如請求項1或2之半導體裝置，其中存在於壓模樹脂層與基板之間的樹脂層係包含選自由環氧樹脂及丙烯酸樹脂所成之群組的至少1種。
  5. 如請求項1或2之半導體裝置，其中基板之表面為阻焊劑、氮化矽、聚醯亞胺或矽。
  6. 如請求項1或2之半導體裝置，其中半導體晶片係以覆 晶形式與基板連接。
  7. 如請求項5之半導體裝置，其中半導體晶片係以面朝上與基板連接。
  8. 如請求項1或2之半導體裝置，其中壓模樹脂層為環氧樹脂。
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