JP7237828B2 - エポキシ樹脂組成物、電子部品実装構造体およびその製造方法 - Google Patents
エポキシ樹脂組成物、電子部品実装構造体およびその製造方法 Download PDFInfo
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- JP7237828B2 JP7237828B2 JP2019523484A JP2019523484A JP7237828B2 JP 7237828 B2 JP7237828 B2 JP 7237828B2 JP 2019523484 A JP2019523484 A JP 2019523484A JP 2019523484 A JP2019523484 A JP 2019523484A JP 7237828 B2 JP7237828 B2 JP 7237828B2
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- epoxy resin
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- polished surface
- fused silica
- electronic component
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- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- JAYXSROKFZAHRQ-UHFFFAOYSA-N n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC=CC=1)CC1CO1 JAYXSROKFZAHRQ-UHFFFAOYSA-N 0.000 description 1
- GEMHFKXPOCTAIP-UHFFFAOYSA-N n,n-dimethyl-n'-phenylcarbamimidoyl chloride Chemical compound CN(C)C(Cl)=NC1=CC=CC=C1 GEMHFKXPOCTAIP-UHFFFAOYSA-N 0.000 description 1
- 150000004780 naphthols Chemical class 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- ZWGWPHTUOWMLHG-UHFFFAOYSA-N phenyl-(2,3,4,5-tetraethylphenyl)methanediamine Chemical compound CCC1=C(CC)C(CC)=CC(C(N)(N)C=2C=CC=CC=2)=C1CC ZWGWPHTUOWMLHG-UHFFFAOYSA-N 0.000 description 1
- IGALFTFNPPBUDN-UHFFFAOYSA-N phenyl-[2,3,4,5-tetrakis(oxiran-2-ylmethyl)phenyl]methanediamine Chemical compound C=1C(CC2OC2)=C(CC2OC2)C(CC2OC2)=C(CC2OC2)C=1C(N)(N)C1=CC=CC=C1 IGALFTFNPPBUDN-UHFFFAOYSA-N 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000010333 wet classification Methods 0.000 description 1
Images
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- B29K2063/00—Use of EP, i.e. epoxy resins or derivatives thereof, as moulding material
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Description
電子部品としては、例えば、樹脂フィルム上に配列された複数の個片化された半導体チップの集合体が準備される。このような集合体は、例えば、半導体ウエハをダイシングで個片化した後、樹脂フィルムに載置することにより準備される。
エポキシ樹脂組成物による電子部品の封止は、例えば、圧縮成形により行われるが、成形方法は圧縮成形に限るものではなく、印刷成形、トランスファー成形、ディスペンサなどによる塗布成形などであってもよい。圧縮成形では、例えば、金型内に電子部品とエポキシ樹脂組成物とが配置され、所定の圧力下でエポキシ樹脂組成物が加熱される。エポキシ樹脂組成物が硬化することにより、封止体が形成される。
次に、エポキシ樹脂組成物の硬化物の一部を研磨して、再配線層を形成するための研磨面を形成する。研磨は、封止体の片面だけに対して行ってもよく、両面に対して行ってもよい。すなわち、必要に応じて、封止体の両面に再配線層を形成してもよい。このとき、研磨面のRaが0.2μm以下、更には0.15μm以下になるまで硬化物を研磨することが好ましい。研磨はグラインダーなどの研磨機を用いて機械的研磨を実施してもよいし、化学的研磨を実施してもよい。
研磨面には、例えば、コーティング材料もしくは再配線形成用材料の膜が形成される。コーティング材料もしくは再配線形成用材料の膜を形成する方法は、特に限定されないが、例えば、ロール塗工、スクリーン塗工、グラビア塗工、スピンコート法、ダイコート法、スプレーコート法などにより、コーティング材料もしくは再配線形成用材料を塗布する方法などが挙げられる。研磨面は、平坦性が高いため、コーティング材料もしくは再配線形成用材料の膜を均一な厚みで容易に形成することができる。再配線(RDL)の形成、バンプ形成などが行われた後、ダイシングを行えば、個片化されたデバイス(電子部品実装構造体)が得られる。
(エポキシ樹脂)
エポキシ樹脂組成物に含まれるエポキシ樹脂としては、特に限定されないが、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールAD型エポキシ樹脂、ビスフェノールS型エポキシ樹脂等のビスフェノール型エポキシ樹脂;ビスフェノール型エポキシ樹脂が部分縮合したオリゴマー混合物;ビスフェノールフルオレン型エポキシ樹脂、ビスクレゾールフルオレン型エポキシ樹脂等のフルオレン型エポキシ樹脂;1,6-ビス(2,3-エポキシプロポキシ)ナフタレン等のナフタレン型エポキシ樹脂;ビフェニル型またはテトラメチルビフェニル型エポキシ樹脂;トリグリシジル-p-アミノフェノール(p-アミノフェノール型エポキシ樹脂)などのアミノフェノール型エポキシ樹脂;ジグリシジルアニリンなどのアニリン型エポキシ樹脂;ジグリシジルオルソトルイジンなどのトルイジン型エポキシ樹脂;テトラグリシジルジアミノジフェニルメタンなどのジアミノジフェニルメタン型エポキシ樹脂等のグリシジルアミン型エポキシ樹脂;ジエポキシリモネン等の脂環式エポキシ樹脂;ジシクロペンタジエン型エポキシ樹脂;トリメチロールプロパントリグリシジルエーテル、トリメチロールメタントリグリシジルエーテル、トリメチロールエタントリグリシジルエーテル等のトリメチロールアルカン型エポキシ樹脂;ポリエーテル型エポキシ樹脂;シリコーン変性エポキシ樹脂;ノボラック型エポキシ樹脂;カテコールジグリシジルエーテル、レゾルシンジグリシジルエーテル、フタル酸ジグリシジルエーテル、2,5-ジイソプロピルヒドロキノンジグリシジルエーテル、ヒドロキノンジグリシジルエーテル等のベンゼン環を1個有する一核体芳香族エポキシ樹脂類;これらの核水添型エポキシ樹脂などを用いることができる。これらは単独で用いてもよく、2種以上を組み合わせて使用してもよい。これらの中では、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールAD型エポキシ樹脂、ナフタレン型エポキシ樹脂、ノボラック型エポキシ樹脂が好ましく、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ナフタレン型エポキシ樹脂がより好ましく、ナフタレン型エポキシ樹脂が耐湿性の点でさらに好ましい。これらは単独で用いてもよく、2種以上を組み合わせて用いてもよい。
エポキシ樹脂組成物には、エポキシ樹脂組成物の硬化物の熱膨張率を低く抑えるために、溶融シリカが含まれる。溶融シリカとしては、球状溶融シリカ、破砕溶融シリカなどを用いることができる。流動性の点からは球状溶融シリカが好ましい。球状溶融シリカとしては、粉砕したシリカ粉末を高温の火炎中で溶融し、表面張力により球状化させたものが主流である。
エポキシ樹脂組成物に含まれる硬化剤としては、酸無水物、フェノール樹脂、アミン化合物などを用いることができる。
エポキシ樹脂組成物には、エポキシ樹脂、溶融シリカ、硬化剤以外に、硬化促進剤、シランカップリング剤などが含まれてもよい。カーボンブラック、消泡剤、レベリング剤、顔料、応力緩和剤、プレゲル化剤、イオンキャッチャーなどを目的に応じて、適量添加することもできる。
エポキシ樹脂組成物は、各成分を所定の比率で配合し、例えば60~480分間攪拌し、その後、減圧下で脱泡してから用いるとよい。エポキシ樹脂組成物は、液状またはシート状であってもよく、半硬化状態であってもよい。
研磨面に塗布などにより膜化されるコーティング材料としては、特に限定されず、エポキシ樹脂組成物の硬化物の用途に応じて選択することができる。エポキシ樹脂組成物をFOWLPやFOPLPの封止材として用いる場合、再配線形成用材料として、例えば表面保護膜形成用材料が選択される。表面保護膜形成用材料には、例えば、感光性ポリイミド、感光性ポリベンゾオキサゾールなどが用いられる。再配線形成用材料の膜を形成する方法は、特に限定されず、例えば、スピンコート法、ダイコート法、スプレーコート法、デイップ、インクジェット、スクリーン印刷、ジェットディスペンスなどにより、研磨面に再配線形成用材料を塗布する方法などが挙げられる。塗膜形成後、露光、現像、エッチングなどの処理を経て、再配線層が形成される。または研磨面にスパッタリングや無電解メッキでシード層(Cuなど)を形成し、パターン形成してから、再配線層を形成してもよい。再配線層はCu、Cu合金、Al、Al合金等であってよい。
以下、本発明を実施例および比較例に基づいて具体的に説明するが、本発明は以下の実施例に限定されるものではない。
(1)エポキシ樹脂組成物の調製
以下を配合して120分間攪拌し、その後、減圧下で脱泡してエポキシ樹脂組成物を調製した。
<エポキシ樹脂> 100質量部
ビスフェノールA型エポキシ樹脂(日本化薬株式会社製、RE-310、エポキシ当量184g/eq)
<硬化剤> 100質量部
メチルテトラヒドロ無水フタル酸(日立化成株式会社製、酸無水物当量164g/eq)
<硬化促進剤> 6質量部
アミンアダクト系潜在性硬化促進剤(味の素株式会社製、アミキュアPN-23)
<シランカップリング剤> 3質量部
3-グリシドキシプロピルトリメトキシシラン
<カーボンブラック> 1質量部
三菱化学株式会社製、#2600
<溶融シリカA> 1500質量部
樹脂フィルム上に配列された複数の個片化された半導体チップ(厚さ1mm)上に、(1)で調製したエポキシ樹脂組成物を塗布し、圧縮成形により硬化させた。圧縮成形において、加熱は125℃で10分間、後硬化は150℃で1時間とした。
(2)で作製した試験片の硬化物の表面をグラインダーで研磨し、研磨面を形成した。
(3)で得られた試験片の硬化物の研磨面を、超深度カラー3D形状測定顕微鏡((株)キーエンス製、VK-9510)を用いて測定した。研磨面の写真を図1に示す。また、研磨面から無作為に選択した25mm2の範囲の10領域において、中空粒子の断面に由来する孔の直径および個数を測定した。直径が1.5μmより大きく5μm以下の孔、直径が5μmより大きく10μm以下の孔、直径が10μmより大きい孔の個数をそれぞれ測定し、平均値を求めた。結果を表1に示す。
溶融シリカとして溶融シリカBを用いたこと以外、実施例1と同様にエポキシ樹脂組成物を調製し、試験片を作製した。溶融シリカBは、精密分級により、できるだけ中空粒子を除去するとともに、最大粒径10μm以下、平均粒径3μmとしたものを用いた。研磨面の写真を図2に、研磨面を評価した結果を表1および表2に示す。
溶融シリカとして溶融シリカCを用いたこと以外、実施例1と同様にエポキシ樹脂組成物を調製し、試験片を作製した。溶融シリカCは、風力による精密分級により、できるだけ中空粒子を除去するとともに、最大粒径10μm以下、平均粒径2μmとしたものを用いた。研磨面の写真を図3に、研磨面を評価した結果を表1および表2に示す。
溶融シリカとして溶融シリカDを用いたこと以外、実施例1と同様にエポキシ樹脂組成物を調製し、試験片を作製した。溶融シリカDは、最大粒径25μm以下、平均粒径7μmのものを用いた。研磨面の写真を図4に、研磨面を評価した結果を表1および表2に示す。
溶融シリカとして溶融シリカEを用いたこと以外、実施例1と同様にエポキシ樹脂組成物を調製し、試験片を作製した。溶融シリカEは、最大粒径が75μm以下、平均粒径は20μmであった。研磨面の写真を図5に、研磨面を評価した結果を表1および表2に示す。
溶融シリカとして溶融シリカFを用いたこと以外、実施例1と同様にエポキシ樹脂組成物を調製し、試験片を作製した。溶融シリカFは、溶融シリカCの精密分級前の溶融シリカである。溶融シリカFの最大粒径は45μm、平均粒径は2μmであった。研磨面の写真を図6に、研磨面を評価した結果を表1および表2に示す。
2:実施例2で観察された中空粒子断面に由来する孔
3:実施例3で観察された中空粒子断面に由来する孔
4:比較例1で観察された中空粒子断面に由来する孔
5:比較例2で観察された中空粒子断面に由来する孔
6:比較例3で観察された中空粒子断面に由来する孔
Claims (8)
- エポキシ樹脂と、中空粒子を含み得る溶融シリカと、硬化剤及び/又は硬化促進剤と、を含むエポキシ樹脂組成物であって、
前記エポキシ樹脂組成物中の前記溶融シリカの含有量が、70~90質量%であり、
前記溶融シリカの最大粒径が5μmより大きく、
前記エポキシ樹脂組成物の硬化物を研磨して得られる研磨面であって、直径1.5μmより大きい孔を有さない領域における算術平均粗さRaが0.2μm以下になるまで研磨された研磨面において、25mm2の範囲に観測される前記中空粒子の断面に由来する直径5μmより大きい孔の数が、1個以下であり、
前記エポキシ樹脂組成物を150℃で1時間熱硬化することにより形成された硬化物に前記研磨面を形成する、エポキシ樹脂組成物。 - 前記25mm2の範囲に観測される前記中空粒子の断面に由来する直径2μmより大きい孔の数が、1個以下である、請求項1に記載のエポキシ樹脂組成物。
- 溶融シリカの最大粒径が25μm以下であり、平均粒径が1μmより大きい、請求項1または2に記載のエポキシ樹脂組成物。
- 前記研磨面は再配線層を形成するための研磨面である、請求項1~3のいずれか1項に記載のエポキシ樹脂組成物。
- ファンアウトパネルレベルパッケージ用またはファンアウトウエハレベルパッケージ用の圧縮成形用材料である、請求項1~4のいずれか1項に記載のエポキシ樹脂組成物。
- 電子部品と、
前記電子部品を封止するエポキシ樹脂組成物の硬化物と、を具備し、
前記エポキシ樹脂組成物は、エポキシ樹脂と、中空粒子を含み得る溶融シリカと、硬化剤及び/又は硬化促進剤と、を含み、
前記エポキシ樹脂組成物中の前記溶融シリカの含有量が、70~90質量%であり、
前記溶融シリカの最大粒径が5μmより大きく、
前記硬化物が、直径1.5μmより大きい孔を有さない領域における算術平均粗さRaが0.2μm以下になるまで研磨された研磨面を有し、
前記研磨面において、25mm2の範囲に観測される前記中空粒子の断面に由来する直径5μmより大きい孔の数が、1個以下である、電子部品実装構造体。 - 前記研磨面に再配線層が形成されている、請求項6に記載の電子部品実装構造体。
- 電子部品と、請求項1~5のいずれか1項に記載のエポキシ樹脂組成物と、を準備する工程と、
前記エポキシ樹脂組成物で前記電子部品を封止するとともに前記エポキシ樹脂組成物を硬化させ、前記電子部品と前記エポキシ樹脂組成物の硬化物とを含む封止体を形成する工程と、
前記硬化物の一部を研磨して研磨面を形成する工程と、
前記研磨面に再配線層を形成する工程と、を含む電子部品実装構造体の製造方法。
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JP2008130796A (ja) | 2006-11-21 | 2008-06-05 | Sumitomo Bakelite Co Ltd | 多層プリント配線板用絶縁樹脂組成物、基材付き絶縁シート、多層プリント配線板及び半導体装置 |
JP2009009110A (ja) | 2007-05-30 | 2009-01-15 | Sumitomo Bakelite Co Ltd | 感光性接着剤樹脂組成物、接着フィルムおよび受光装置 |
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JP2023036699A (ja) | 2023-03-14 |
JP7420904B2 (ja) | 2024-01-23 |
TW201903044A (zh) | 2019-01-16 |
CN110651007A (zh) | 2020-01-03 |
KR102582382B1 (ko) | 2023-09-25 |
JPWO2018225599A1 (ja) | 2020-04-09 |
US11608435B2 (en) | 2023-03-21 |
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