JP2014120727A - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 229910052751 metal Inorganic materials 0.000 claims abstract description 165
- 239000002184 metal Substances 0.000 claims abstract description 165
- 229920005989 resin Polymers 0.000 claims abstract description 62
- 239000011347 resin Substances 0.000 claims abstract description 62
- 238000007789 sealing Methods 0.000 claims abstract description 62
- 230000005855 radiation Effects 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 37
- 239000010949 copper Substances 0.000 claims description 35
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 230000003746 surface roughness Effects 0.000 claims description 26
- 229910003471 inorganic composite material Inorganic materials 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000001721 transfer moulding Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000004519 grease Substances 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 239000010954 inorganic particle Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
【解決手段】第1の表面上に半導体素子4を搭載したヒートスプレッダー3と、第2の表面上にヒートスプレッダー3を接合した絶縁シート2と、第3の表面上に絶縁シート2を接合した金属ベース板1を樹脂封止する封止樹脂7を備えた電力用半導体装置100において、絶縁シート2の第2の裏面の面積より金属ベース板1の第3の表面の面積が大きく、金属ベース板1の第3の表面のうち、封止樹脂7との接合領域は粗化された粗面であることを特徴とする。
【選択図】 図1
Description
まず、この発明の実施の形態1における電力用半導体装置の構成を説明する。図1は、実施の形態1における電力用半導体装置の断面図である。本実施の形態では、絶縁層として高熱伝導性の無機材料を充填材とし有機材料である樹脂をマトリックスとする有機無機複合材料が用いられた、高熱伝導でかつ絶縁性の絶縁シート2を用いる。図1に示すように、本実施の形態の電力用半導体装置100は、第1の表面と第1の裏面とを有し、第1の表面上に半導体素子4を接合した金属製のヒートスプレッダー3と、第2の表面と第2の裏面とを有し、第2の表面の一部がヒートスプレッダー3の第1の裏面に接合した絶縁シート2と、第3の表面と第3の裏面を有し、第3の表面の一部が絶縁シート2の第2の裏面に接合した金属ベース板1と、封止樹脂7とを備える。
Claims (7)
- 第1の表面と第1の裏面とを有し、前記第1の表面上に半導体素子を接合した金属製のヒートスプレッダーと、
前記第1の裏面より面積が大きい第2の表面と、第2の裏面と、を有し、前記第2の表面の一部が、前記第1の裏面と接合した有機無機複合材料からなる絶縁層と、
前記第2の裏面より面積が大きい第3の表面と、第3の裏面と、を有し、前記第3の表面の一部が、前記第2の裏面と接合した金属ベース板と、
前記半導体素子と前記ヒートスプレッダーと前記絶縁層と前記金属ベース板とを樹脂封止する封止樹脂と
を備え、
前記第3の表面が、前記封止樹脂との接合領域では粗面であること
を特徴とする電力用半導体装置。 - 前記第3の表面が、前記第2の裏面との接合領域では平滑面であること
を特徴とする請求項1に記載の電力用半導体装置。 - 前記金属ベース板の厚さが2mm以上から4mm以下であること
を特徴とする請求項1又は2に記載の電力用半導体装置。 - 前記平滑面の表面粗さRaの値が1μm以上4μm以下であること
を特徴とする請求項2又は3に記載の電力用半導体装置。 - 前記粗面の表面粗さRaの値が5μm以上25μm以下であること
を特徴とする請求項1乃至4のいずれか1項に記載の電力用半導体装置。 - 前記金属ベース板が銅ベース板であること
を特徴とする請求項1乃至5のいずれか1項に記載の電力用半導体装置。 - 前記金属ベース板に設けた貫通孔をネジ穴として、前記金属ベース板の第3の裏面に前記金属ベース板とネジ固定した放熱フィンを備えた請求項1乃至6のいずれか1項に記載の電力用半導体装置。
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JP2014120727A true JP2014120727A (ja) | 2014-06-30 |
JP5928324B2 JP5928324B2 (ja) | 2016-06-01 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6418348B1 (ja) * | 2017-08-14 | 2018-11-07 | 東洋インキScホールディングス株式会社 | 複合部材 |
CN111373527A (zh) * | 2017-11-22 | 2020-07-03 | 三菱电机株式会社 | 半导体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003168769A (ja) * | 2001-11-30 | 2003-06-13 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2005019545A (ja) * | 2003-06-24 | 2005-01-20 | Mitsui High Tec Inc | 放熱板付きリードフレーム及びその製造方法 |
JP2011216619A (ja) * | 2010-03-31 | 2011-10-27 | Nippon Steel Chem Co Ltd | 積層構造体及びその製造方法 |
WO2012029165A1 (ja) * | 2010-09-02 | 2012-03-08 | トヨタ自動車株式会社 | 半導体モジュール |
-
2012
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003168769A (ja) * | 2001-11-30 | 2003-06-13 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2005019545A (ja) * | 2003-06-24 | 2005-01-20 | Mitsui High Tec Inc | 放熱板付きリードフレーム及びその製造方法 |
JP2011216619A (ja) * | 2010-03-31 | 2011-10-27 | Nippon Steel Chem Co Ltd | 積層構造体及びその製造方法 |
WO2012029165A1 (ja) * | 2010-09-02 | 2012-03-08 | トヨタ自動車株式会社 | 半導体モジュール |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6418348B1 (ja) * | 2017-08-14 | 2018-11-07 | 東洋インキScホールディングス株式会社 | 複合部材 |
WO2019035445A1 (ja) * | 2017-08-14 | 2019-02-21 | 東洋インキScホールディングス株式会社 | 複合部材 |
EP3671827A4 (en) * | 2017-08-14 | 2021-05-19 | Toyo Ink SC Holdings Co., Ltd. | COMPOSITE ELEMENT |
TWI759506B (zh) * | 2017-08-14 | 2022-04-01 | 日商東洋油墨Sc控股股份有限公司 | 複合構件 |
US11407201B2 (en) | 2017-08-14 | 2022-08-09 | Toyo Ink Sc Holdings Co., Ltd. | Composite member |
CN111373527A (zh) * | 2017-11-22 | 2020-07-03 | 三菱电机株式会社 | 半导体装置 |
CN111373527B (zh) * | 2017-11-22 | 2024-04-26 | 三菱电机株式会社 | 半导体装置 |
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