CN111373527A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN111373527A
CN111373527A CN201780096912.5A CN201780096912A CN111373527A CN 111373527 A CN111373527 A CN 111373527A CN 201780096912 A CN201780096912 A CN 201780096912A CN 111373527 A CN111373527 A CN 111373527A
Authority
CN
China
Prior art keywords
surface pressure
semiconductor device
case
housing
pressure buffering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201780096912.5A
Other languages
English (en)
Other versions
CN111373527B (zh
Inventor
饭塚新
冈本是英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN111373527A publication Critical patent/CN111373527A/zh
Application granted granted Critical
Publication of CN111373527B publication Critical patent/CN111373527B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/405—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/4062—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to or through board or cabinet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4075—Mechanical elements
    • H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Casings For Electric Apparatus (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

半导体装置具有：半导体元件(10)；散热器(50)，其搭载有半导体元件(10)；以及树脂制的壳体(60)，其搭载于散热器(50)，收容半导体元件(10)。在壳体(60)及散热器(50)形成有贯穿它们的紧固孔(80)。壳体(60)在俯视观察时包含紧固孔(80)的部分具有板状的面压力缓冲部件(61)，该面压力缓冲部件(61)具有比树脂高的刚性。

Description

半导体装置
技术领域
本发明涉及半导体装置，特别地，涉及电力用半导体装置的冷却构造。
背景技术
存在具有高可靠性的电力用半导体装置(功率模块)的高功率化及小型化的要求。为了响应该要求，除了在半导体装置搭载的半导体元件的大容量化以外，还研究了采用具有带鳍片的散热器的直接冷却构造的半导体装置。就直接冷却构造的半导体装置而言，为了防止冷却水泄漏，存在以下倾向，即，要求通过与以往的经由油脂冷却的半导体装置相比更高的紧固扭矩与散热器紧固。
从耐腐蚀性、轻量化的观点出发，散热器大多使用铝类材量。因此，在通过螺栓而将半导体装置与散热器直接紧固的情况下，有可能发生由于经由螺栓施加的应力(面压力)而使散热器凹陷等散热器的变形。
例如在专利文献1中提出了如下技术，即，就具有使用螺栓将搭载半导体元件的陶瓷基材固定于散热器(散热板)的构造的半导体装置而言，通过在陶瓷基材的与螺栓抵接的部分形成金属层，从而防止应力在该部分集中。
专利文献1：日本特开2000-082774号公报
发明内容
专利文献1的技术难以应用于半导体元件被收容于树脂制壳体的构造的半导体装置。这是因为在构成壳体的树脂之上难以形成能够缓和来自螺栓的应力的程度的金属层。
另外，还存在如下技术，即，向用于通过螺栓而将树脂制的壳体紧固于散热器的紧固孔，插入由高刚性材料构成的被称为“套环”的圆筒形的面压力缓冲部件。考虑到生产率，套环通过嵌入成型而与树脂制的壳体一体地形成。即，在壳体的制造时，通过将套环固定在用于对壳体进行成型的模具内，向其周围注入树脂，从而套环与壳体一体地形成。但是，在对螺栓要求高的紧固扭矩的情况下，存在由于该紧固扭矩而使套环从壳体剥离，发生套环的空转、壳体的破裂的可能性。
本发明就是为了解决以上这样的课题而提出的，其目的在于，就具有树脂制的壳体的半导体装置而言，在通过螺栓进行紧固时抑制散热器的变形。
本发明涉及的半导体装置具有：半导体元件；散热器，其搭载了所述半导体元件；树脂制的壳体，其搭载于所述散热器，收容所述半导体元件；以及紧固孔，其贯穿所述壳体及所述散热器，所述壳体在俯视观察时包含所述紧固孔的部分具有板状的面压力缓冲部件，该面压力缓冲部件具有比所述树脂高的刚性。
发明的效果
根据本发明，由于面压力缓冲部件呈板状，因此能够得到与壳体的树脂之间的高密接性。另外，在由螺栓进行紧固时，在壳体、散热器产生的应力(面压力)得到抑制，能够防止散热器的变形。
本发明的目的、特征、方案以及优点通过以下的详细说明和附图变得更清楚。
附图说明
图1是实施方式1涉及的半导体装置的剖面图。
图2是实施方式1涉及的半导体装置的俯视图。
图3是实施方式1涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图4是用于对实施方式1中的面压力缓冲部件的变形例进行说明的图。
图5是用于对实施方式1中的面压力缓冲部件的变形例进行说明的图。
图6是实施方式2涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图7是实施方式2涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图8是实施方式2涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图9是实施方式2涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图10是实施方式2涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图11是实施方式2涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图12是实施方式3涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图13是实施方式3涉及的半导体装置的将外部电极、壳体的树脂部分及散热器进行透视的俯视图。
图14是实施方式3涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图15是实施方式4涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图16是用于对实施方式4中的面压力缓冲部件的变形例进行说明的图。
图17是实施方式5涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图18是实施方式5涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
图19是实施方式5涉及的半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
具体实施方式
＜实施方式1＞
图1是本发明的实施方式1涉及的半导体装置的剖面图。如图1所示，该半导体装置具有半导体元件10和散热器50，该半导体元件10收容于树脂制的壳体60，壳体60被搭载于该散热器50。
半导体元件10是IGBT(Insulated Gate Bipolar Transistor)、MOSFET(Metal-Oxide Semiconductor Field-Effect Transistor)、FWDi(Free Wheeling Diode)等电力用半导体元件。半导体元件10的下表面使用钎料20而与在绝缘基板31之上形成的电路图案30接合。绝缘基板31例如由氮化铝(AlN)等绝缘材料构成。电路图案30作为向半导体元件10供给特定电位的通路而起作用，例如由铝(Al)或铜(Cu)等导电材料构成。
在绝缘基板31的下表面形成有例如由Al、Cu等构成的金属图案32，金属图案32使用绝缘基板31而与散热器50的上表面接合。此外，金属图案32和散热器50也可以使用固相扩散接合或压铸等技术而接合，而不使用钎料21。另外，也可以将钎料21与绝缘基板31直接接合，而不在绝缘基板31的下表面设置金属图案32。
散热器50由导热率高且具有耐腐蚀性的材料构成。作为散热器50的材料的例子，例如有Al或以Al为主要成分的合金等。另外，在散热器50的下表面设置有例如销状或板状的散热鳍片51，能够通过冷却溶剂进行散热器50的直接冷却。
另外，半导体元件10及电路图案30经由配线41而与在壳体60设置的外部电极40连接。配线41及外部电极40例如由Al或Cu等导电材料构成。这里，外部电极40与半导体元件10以及电路图案30使用导线的配线41而连接，但也可以应用例如将外部电极40与半导体元件10或电路图案30直接钎焊的直接引线键合构造。外部电极40是用于连接外部配线的端子，通过嵌入成型而与壳体60一体地形成。
在壳体60的内部，无间隙地填充有例如由硅凝胶或环氧类树脂构成的封装材料70。此外，壳体60及封装材料70也可以构成为由模塑树脂构成的一体成型品。
在壳体60及散热器50形成有贯穿它们的紧固孔80。壳体60及散热器50使用插入至紧固孔80的螺栓(未图示)而被紧固于例如冷却套等外部框体。
这里，壳体60在俯视观察时包含紧固孔80的区域具有板状的面压力缓冲部件61，该面压力缓冲部件61具有比壳体60的树脂更高的刚性。面压力缓冲部件61通过嵌入成型而与壳体60一体地形成。作为面压力缓冲部件61的材料，例如想到铁(Fe)。优选面压力缓冲部件61的厚度大于或等于0.5mm。
图2是图1所示的半导体装置的俯视图，图3是该半导体装置的将外部电极40、壳体60的树脂部分(即，除去面压力缓冲部件61以外的部分)以及散热器50透视的俯视图。这里，示出在壳体60内收容了6个使用半导体元件10的电路而成的“6合1构造”的半导体装置，但也可以是例如“1合1构造”或“2合1构造”。
如图3所示，面压力缓冲部件61配置于在俯视观察时包含紧固孔80的部分。即，紧固孔80形成于面压力缓冲部件61。就面压力缓冲部件61的上表面而言，至少紧固孔80的周围的部分(与螺栓的接触部分)从壳体60的树脂露出。另外，面压力缓冲部件61的下表面与散热器50抵接。因此，在插入至紧固孔80的螺栓的头部与散热器50之间存在面压力缓冲部件61。另外，也可以在螺栓的头部与面压力缓冲部件61之间咬合垫圈。
在本实施方式中，面压力缓冲部件61呈在壳体60的外周部延伸的框状，构成为在俯视观察时将全部紧固孔80包含在内的形状的一片板。与圆筒形的面压力缓冲部件(套环)相比，板状的面压力缓冲部件61与壳体60的树脂之间的接触面积大，能够得到与该树脂的高密接性。另外，在由螺栓进行紧固时，在壳体60、散热器50产生的应力(面压力)得到抑制。其结果，散热器50变形、或面压力缓冲部件61从壳体60的树脂剥离、或壳体60破损这样的情况得到抑制。其结果，用户的操作性提高。特别地，在1个面压力缓冲部件61具有多个紧固孔80的情况下，能够有效地抑制从面压力缓冲部件61施加至散热器50的应力。
此外，也可以对面压力缓冲部件61的角部实施倒角加工(R加工或C加工等)。另外，如图4所示，也可以将除了紧固孔80的周围的区域(与螺栓或垫圈接触的区域)以外的部分设得窄，减少材料的使用量，实现材料成本的降低。
并且，高刚性的面压力缓冲部件61在半导体装置内延伸，从而还能够期待对半导体装置的翘曲进行抑制的效果(以下称为“翘曲抑制效果”)。另外，由于构成面压力缓冲部件61的Fe具有比壳体60的树脂更高的导热率，因此面压力缓冲部件61也有助于半导体装置的散热。由于与圆筒状的面压力缓冲部件相比，板状的面压力缓冲部件61的表面积大，因此能够期待冷却性能提高的效果(以下称为“冷却效果”)。
另外，例如，如图5所示，也可以在面压力缓冲部件61设置横穿壳体60内的梁部61a。即，面压力缓冲部件61具有在壳体60的外周部延伸的部分和横穿壳体60内的部分(梁部61a)。在这种情况下，能够期待上述的翘曲抑制效果及冷却效果的进一步提高。
此外，在以上的说明中，将面压力缓冲部件61的材料设为铁(Fe)，但也可以是导热率更高的材料，例如铜(Cu)等。在这种情况下，能够期待冷却效果的进一步提高。
另外，也可以使面压力缓冲部件61由与紧固所使用的螺栓(以及垫圈)相同的材量构成。作为螺栓的材料，通常例如是不锈钢、黄铜、钛、铬钼等。通过使面压力缓冲部件61的材料与螺栓的材料一致，从而高温时产生的应力得到抑制，能够期待在散热器50产生的应力的进一步降低。
＜实施方式2＞
在实施方式2中，在半导体装置的壳体60设置多个面压力缓冲部件61。图6～图11是表示实施方式2涉及的半导体装置的结构例的图，是半导体装置的将外部电极、壳体的树脂部分及散热器透视的俯视图。
例如，如图6或图7所示，在紧固孔80的数量为偶数(8个)的情况下，也可以设置多个(4个)在俯视观察时将2个紧固孔80包含在内的形状的面压力缓冲部件61。图6是将沿壳体60的宽度方向延伸的面压力缓冲部件61在壳体60的长度方向上排列配置了4个的例子。图7是将沿壳体60的长度方向延伸的面压力缓冲部件61分别在壳体60的长边各配置了2个的例子。
即使在将面压力缓冲部件61设为多个的情况下，也与实施方式1同样地，能够得到在由螺栓进行紧固时抑制在壳体60、散热器50产生的应力(面压力)的效果。另外，翘曲抑制效果及冷却效果与实施方式1相比变小，但各个面压力缓冲部件61的尺寸变小，由此能够期待材料成本的削减、重量降低。并且，如果使多个面压力缓冲部件61的形状全部相同，则能够抑制部件种类的增加，能够实现生产率的提高。
另外，例如，如图8或图9所示，在紧固孔80的数量为3的倍数(6个)的情况下，也可以设置多个(2个)在俯视观察时将3个紧固孔80包含在内的形状的面压力缓冲部件61。图8是将沿壳体60的长度方向延伸的面压力缓冲部件61配置于壳体60的各长边的例子。图9是将沿壳体60的相邻的2边延伸的L字型的面压力缓冲部件61点对称地配置了2个的例子。
与图6及图7的例子相比，面压力缓冲部件61的尺寸变大，个数变少。因此，能够实现材料成本的削减和翘曲抑制效果及冷却效果的兼顾。另外，如图9所示，如果将面压力缓冲部件61设为L字型，则得到了高的翘曲抑制效果。
另外，例如，如图10或图11所示，在紧固孔80的数量为4的倍数(8个)的情况下，也可以设置多个(2个)在俯视观察时将4个紧固孔80包含在内的形状的面压力缓冲部件61。图10是将框状的面压力缓冲部件61在壳体60的长度方向上排列配置了2个的例子。图11是将沿壳体60的长度方向延伸的面压力缓冲部件61配置于壳体60的各长边的例子。
在这种情况下，也能够实现材料成本的削减和翘曲抑制效果及冷却效果的兼顾。另外，如图10所示，在将2个面压力缓冲部件61设为框状的情况下，就各面压力缓冲部件61而言，横穿壳体60的边与图5所示的梁部61a同样地起作用，因此得到了高的翘曲抑制效果。
＜实施方式3＞
实施方式1、2所示的面压力缓冲部件61的上表面、侧面是平坦的，但在实施方式3中，对面压力缓冲部件61的除了紧固孔80的周围(与螺栓或垫圈接触的区域)以外的部分实施孔加工、凹凸加工。
例如，如图12所示，也可以形成在厚度方向(上下方向)上贯穿面压力缓冲部件61的贯穿孔61b。另外，如图13所示，也可以在面压力缓冲部件61的侧面形成多个凹部61c，将该侧面设为凹凸状。另外，如图14所示，也可以在面压力缓冲部件61的上表面形成多个凹坑61d，将该上表面设为凹凸状。在这种情况下，外部电极40的树脂部分以将面压力缓冲部件61的形成有凹坑61d的部分覆盖的方式成型。
根据本实施方式，得到了壳体60的树脂与面压力缓冲部件61之间的密接性提高的效果。贯穿孔61b及凹部61c也可以出于避免嵌入于壳体60的其它部件与面压力缓冲部件61之间的干涉的目的、材料成本降低及重量降低的目的而设置。另外，在实施方式3中，也与实施方式1同样地，得到了在由螺栓进行紧固时抑制在壳体60、散热器50产生的应力(面压力)的效果。
＜实施方式4＞
在实施方式1～3中，在1片面压力缓冲部件61设置了多个紧固孔80，但在实施方式4中，在1片面压力缓冲部件61仅设置1个紧固孔80。即，在实施方式4中，如图15所示，对每1个紧固孔80各配置1个面压力缓冲部件61。各面压力缓冲部件61呈板状。在图15的例子中，使用长方形的面压力缓冲部件61。
另外，优选面压力缓冲部件61以收容于壳体60的内部而不从壳体60的侧面露出的方式配置。即，优选面压力缓冲部件61在俯视观察时被壳体60包含在内。由此，能够更可靠地防止面压力缓冲部件61由于螺栓的紧固扭矩而从外部电极40的树脂部分剥离、空转。另外，应用实施方式3，如图16所示，在面压力缓冲部件61的上表面设置多个凹坑61d，使壳体60的树脂与面压力缓冲部件61之间的密接性提高也是有效的。
在实施方式4中，也与实施方式1同样地，得到了在由螺栓进行紧固时抑制在壳体60及散热器50产生的应力(面压力)的效果。另外，翘曲抑制效果及冷却效果与实施方式1相比变小，但各个面压力缓冲部件61的尺寸变小，由此能够期待材料成本的削减、重量降低。并且，如果使多个面压力缓冲部件61的形状全部相同，则能够抑制部件种类的增加，能够实现生产率的提高。
＜实施方式5＞
实施方式1～4所示的面压力缓冲部件61的厚度是均一的，但在实施方式5中，将面压力缓冲部件61的紧固孔80的周围的部分(与螺栓或垫圈接触的区域)设得比其它部分厚。换言之，将面压力缓冲部件61的除了紧固孔80的周围以外的部分设得薄，使面压力缓冲部件61的紧固孔80的周围的部分在面压力缓冲部件61的厚度方向上凸出。
例如，如图17所示，也可以使面压力缓冲部件61的紧固孔80的周围的部分向下方凸出。即，在图17中，通过将除了紧固孔80的周围以外的部分的下表面的位置设得高，从而使该部分薄。另外，如图18所示，也可以使面压力缓冲部件61的紧固孔80的周围的部分向上方凸出。即，在图18中，通过将除了紧固孔80的周围以外的部分的上表面的位置设得低，从而使该部分薄。另外，如图19所示，也可以使面压力缓冲部件61的紧固孔80的周围的部分沿上下两个方向凸出。即，在图19中，通过将除了紧固孔80的周围以外的部分的上表面的位置设得低，并且将下表面的位置设得高，从而使该部分薄。
在本实施方式中，至少在紧固孔80的周围的部分(厚的部分)，使面压力缓冲部件61的上表面从壳体60露出，使面压力缓冲部件61的下表面与散热器50抵接。由此，与实施方式1同样地，得到了在由螺栓进行紧固时抑制在壳体60、散热器50产生的应力(面压力)的效果。
另外，将面压力缓冲部件61的薄的部分的上表面或下表面通过壳体60的树脂进行覆盖，从而与实施方式1相比，得到了壳体60的树脂与面压力缓冲部件61之间的更高的密接性。为了进一步提高密接性，也可以在面压力缓冲部件61的厚的部分(紧固孔80的周围的部分)的侧面设置滚花等凹凸形状。
并且，通过将面压力缓冲部件61局部形成得薄，从而也能够期待材料成本的削减、重量降低。
＜实施方式6＞
在上述实施方式中，面压力缓冲部件61是通过嵌入成型而与壳体60一体地形成的，但在实施方式6中，将面压力缓冲部件61设为与壳体60分体的部件。在这种情况下，面压力缓冲部件61与壳体60在半导体装置的组装工序中使用粘接剂而接合。此外，粘接剂仅涂敷于面压力缓冲部件61的与壳体60接触的面，而不涂敷于从壳体60露出的面(即，与螺栓及散热器50接触的面)。
通过使用粘接剂而将壳体60与面压力缓冲部件61接合，从而不需要面压力缓冲部件61的剥离对策(例如增加外部电极40的树脂的壁厚)，能够有助于半导体装置的小型化。另外，在成形壳体60时嵌入的部件减少，由此还能够期待壳体60的生产率提高。另外，通过在面压力缓冲部件61与螺栓及散热器50接触的面不涂敷粘接剂，从而能够实现紧固部的金属接触。
此外，本发明能够在其发明的范围内对各实施方式自由地进行组合，或者对各实施方式适当地进行变形、省略。
对本发明详细地进行了说明，但上述说明在所有方面均为例示，本发明不限定于此。可以理解为在不脱离该发明的范围的情况下能够想到未例示出的无数的变形例。
标号的说明
10半导体元件，20钎料，21钎料，30电路图案，31绝缘基板，32金属图案，40外部电极，41配线，50散热器，51散热鳍片，60壳体，61面压力缓冲部件，61a梁部，61b贯穿孔，61c凹部，61d凹坑，70封装材料，80紧固孔。

Claims (20)

1.一种半导体装置，其具有：
半导体元件；
散热器，其搭载了所述半导体元件；
树脂制的壳体，其搭载于所述散热器，收容所述半导体元件；以及
紧固孔，其贯穿所述壳体及所述散热器，
所述壳体在俯视观察时包含所述紧固孔的部分具有板状的面压力缓冲部件，该面压力缓冲部件具有比所述树脂高的刚性。
2.根据权利要求1所述的半导体装置，其中，
至少在所述紧固孔的周围，所述面压力缓冲部件的上表面从所述壳体露出，所述面压力缓冲部件的下表面与所述散热器抵接。
3.根据权利要求1或2所述的半导体装置，其中，
所述紧固孔存在多个，
所述面压力缓冲部件呈在俯视观察时包含全部所述多个紧固孔的形状。
4.根据权利要求1至3中任一项所述的半导体装置，其中，
所述面压力缓冲部件具有在所述壳体的外周部延伸的部分和横穿所述壳体内的梁部。
5.根据权利要求1至3中任一项所述的半导体装置，其中，
所述面压力缓冲部件呈在所述壳体的外周部延伸的框状。
6.根据权利要求5所述的半导体装置，其中，
所述面压力缓冲部件具有横穿所述壳体内的梁部。
7.根据权利要求1或2所述的半导体装置，其中，
所述紧固孔及所述面压力缓冲部件各自存在多个，
所述多个面压力缓冲部件各自呈在俯视观察时包含至少1个紧固孔的形状。
8.根据权利要求7所述的半导体装置，其中，
所述多个面压力缓冲部件全部呈相同的形状。
9.根据权利要求7或8所述的半导体装置，其中，
所述多个面压力缓冲部件中的至少1个呈沿所述壳体的相邻的2边延伸的L字型。
10.根据权利要求7或8所述的半导体装置，其中，
所述多个面压力缓冲部件中的至少1个呈包含在所述壳体的外周部延伸的部分和横穿所述壳体内的部分的框状。
11.根据权利要求1至10中任一项所述的半导体装置，其中，
所述面压力缓冲部件在除了所述紧固孔的周围以外的部分形成有贯穿孔、凹部及凹坑中的任意者。
12.根据权利要求1至11中任一项所述的半导体装置，其中，
所述面压力缓冲部件在俯视观察时被所述壳体包含在内。
13.根据权利要求1至12中任一项所述的半导体装置，其中，
就所述面压力缓冲部件而言，所述紧固孔的周围的部分比其它部分形成得厚。
14.根据权利要求13所述的半导体装置，其中，
所述面压力缓冲部件在所述紧固孔的周围的部分的侧面形成有凹凸。
15.根据权利要求1至14中任一项所述的半导体装置，其中，
所述面压力缓冲部件嵌入成型于所述壳体。
16.根据权利要求1至14中任一项所述的半导体装置，其中，
所述面压力缓冲部件是使用粘接剂而与所述壳体粘接的。
17.根据权利要求1至16中任一项所述的半导体装置，其中，
所述面压力缓冲部件具有比所述树脂高的导热率。
18.根据权利要求1至16中任一项所述的半导体装置，其中，
所述面压力缓冲部件的材料是Fe。
19.根据权利要求1至16中任一项所述的半导体装置，其中，
所述面压力缓冲部件的材料是Cu。
20.根据权利要求1至16中任一项所述的半导体装置，其中，
还具有螺栓，该螺栓插入至所述紧固孔，将所述壳体及所述散热器紧固于外部的框体，
所述面压力缓冲部件是与所述螺栓相同的材质。
CN201780096912.5A 2017-11-22 2017-11-22 半导体装置 Active CN111373527B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/041950 WO2019102537A1 (ja) 2017-11-22 2017-11-22 半導体装置

Publications (2)

Publication Number Publication Date
CN111373527A true CN111373527A (zh) 2020-07-03
CN111373527B CN111373527B (zh) 2024-04-26

Family

ID=66630918

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780096912.5A Active CN111373527B (zh) 2017-11-22 2017-11-22 半导体装置

Country Status (5)

Country Link
US (1) US20210202330A1 (zh)
JP (1) JP6742538B2 (zh)
CN (1) CN111373527B (zh)
DE (1) DE112017008226T5 (zh)
WO (1) WO2019102537A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7257977B2 (ja) * 2020-01-17 2023-04-14 三菱電機株式会社 半導体装置および半導体モジュール
JP7378379B2 (ja) * 2020-11-02 2023-11-13 三菱電機株式会社 パワー半導体モジュール及び電力変換装置
EP4075484A1 (en) * 2021-04-12 2022-10-19 Hitachi Energy Switzerland AG Power semiconductor module comprising molded body and method for producing a power semiconductor module
JP7483142B2 (ja) 2021-07-05 2024-05-14 三菱電機株式会社 半導体装置および半導体装置の製造方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01293544A (ja) * 1988-05-20 1989-11-27 Mitsubishi Electric Corp 半導体装置
US6122170A (en) * 1998-06-30 2000-09-19 Sumitomo Electric Industries, Ltd. Power module board and power module using the board
US20020154486A1 (en) * 2001-04-19 2002-10-24 Keihin Corporation Electronic vehicle control unit
JP2003133756A (ja) * 2001-10-25 2003-05-09 Nissan Motor Co Ltd 電子ユニットの筐体構造
JP2012028552A (ja) * 2010-07-23 2012-02-09 Nissan Motor Co Ltd 半導体モジュールのケース構造
US20120181679A1 (en) * 2011-01-14 2012-07-19 Toyota Jidosha Kabushiki Kaisha Semiconductor module
US20130056937A1 (en) * 2010-04-28 2013-03-07 Markus Watermann Sealing Collar
WO2013093958A1 (ja) * 2011-12-20 2013-06-27 三菱電機株式会社 樹脂モールド型半導体モジュール
JP2013222870A (ja) * 2012-04-18 2013-10-28 Ngk Spark Plug Co Ltd 半導体装置
JP2014120592A (ja) * 2012-12-17 2014-06-30 Daikin Ind Ltd パワーモジュール
JP2014120727A (ja) * 2012-12-19 2014-06-30 Mitsubishi Electric Corp 電力用半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5201586B2 (ja) * 2008-12-04 2013-06-05 Ｎｅｃカシオモバイルコミュニケーションズ株式会社 部品の固定構造及び電子機器
JP2017123360A (ja) * 2016-01-04 2017-07-13 株式会社東芝 半導体モジュール

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01293544A (ja) * 1988-05-20 1989-11-27 Mitsubishi Electric Corp 半導体装置
US6122170A (en) * 1998-06-30 2000-09-19 Sumitomo Electric Industries, Ltd. Power module board and power module using the board
US20020154486A1 (en) * 2001-04-19 2002-10-24 Keihin Corporation Electronic vehicle control unit
JP2003133756A (ja) * 2001-10-25 2003-05-09 Nissan Motor Co Ltd 電子ユニットの筐体構造
US20130056937A1 (en) * 2010-04-28 2013-03-07 Markus Watermann Sealing Collar
JP2012028552A (ja) * 2010-07-23 2012-02-09 Nissan Motor Co Ltd 半導体モジュールのケース構造
US20120181679A1 (en) * 2011-01-14 2012-07-19 Toyota Jidosha Kabushiki Kaisha Semiconductor module
WO2013093958A1 (ja) * 2011-12-20 2013-06-27 三菱電機株式会社 樹脂モールド型半導体モジュール
JP2013222870A (ja) * 2012-04-18 2013-10-28 Ngk Spark Plug Co Ltd 半導体装置
JP2014120592A (ja) * 2012-12-17 2014-06-30 Daikin Ind Ltd パワーモジュール
JP2014120727A (ja) * 2012-12-19 2014-06-30 Mitsubishi Electric Corp 電力用半導体装置

Also Published As

Publication number Publication date
CN111373527B (zh) 2024-04-26
WO2019102537A1 (ja) 2019-05-31
DE112017008226T5 (de) 2020-09-03
JPWO2019102537A1 (ja) 2020-05-28
JP6742538B2 (ja) 2020-08-19
US20210202330A1 (en) 2021-07-01

Similar Documents

Publication Publication Date Title
US8058722B2 (en) Power semiconductor module and method of manufacturing the same
JP4569473B2 (ja) 樹脂封止型パワー半導体モジュール
JP6065973B2 (ja) 半導体モジュール
JP4899481B2 (ja) 外部に露出する放熱体を上部に有する樹脂封止型半導体装置の製法
US7701054B2 (en) Power semiconductor module and method for its manufacture
JP5432085B2 (ja) 電力半導体装置
CN111373527B (zh) 半导体装置
US9153514B2 (en) Power module package
US11133271B2 (en) Semiconductor device
KR101443980B1 (ko) 접속핀 및 이를 갖는 전력 모듈 패키지
JP5954409B2 (ja) 放熱フィン付き半導体モジュール
US9305829B2 (en) Semiconductor package with an indented portion and manufacturing method thereof
US11195775B2 (en) Semiconductor module, semiconductor device, and manufacturing method of semiconductor module
JP2000323593A (ja) 半導体装置
JP6150866B2 (ja) 電力半導体装置
US20070013053A1 (en) Semiconductor device and method for manufacturing a semiconductor device
KR20190005736A (ko) 반도체 모듈
US12033916B2 (en) Semiconductor device and semiconductor module with improved heat dissipation
US11587861B2 (en) Semiconductor device and manufacturing method thereof
JP2020072094A (ja) パワーユニット、パワーユニットの製造方法及びパワーユニットを有する電気装置
US10784176B1 (en) Semiconductor device and semiconductor device manufacturing method
US20230109985A1 (en) Semiconductor module
JP7559432B2 (ja) 半導体モジュール及び半導体モジュールの製造方法
JP2007251218A (ja) パワーｍｏｓｆｅｔの製造方法およびパワーｍｏｓｆｅｔ
JP2020072101A (ja) パワーユニット、パワーユニットの製造方法、パワーユニットを有する電気装置及びヒートシンク

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant