JP6742538B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6742538B2 JP6742538B2 JP2019556010A JP2019556010A JP6742538B2 JP 6742538 B2 JP6742538 B2 JP 6742538B2 JP 2019556010 A JP2019556010 A JP 2019556010A JP 2019556010 A JP2019556010 A JP 2019556010A JP 6742538 B2 JP6742538 B2 JP 6742538B2
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- Prior art keywords
- surface pressure
- case
- semiconductor device
- pressure buffering
- heat sink
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- 239000004065 semiconductor Substances 0.000 title claims description 82
- 230000003139 buffering effect Effects 0.000 claims description 46
- 229920005989 resin Polymers 0.000 claims description 43
- 239000011347 resin Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 29
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 22
- 238000001816 cooling Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000005219 brazing Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000013585 weight reducing agent Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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Description
図1は、本発明の実施の形態1に係る半導体装置の断面図である。図1のように、当該半導体装置は、樹脂製のケース60に収納された半導体素子10と、ケース60を搭載したヒートシンク50とを備えている。
実施の形態2では、半導体装置のケース60に複数の面圧緩衝部材61を設ける。図6〜図11は、実施の形態2に係る半導体装置の構成例を示す図であり、半導体装置の外部電極、ケースの樹脂部分およびヒートシンクを透過した上面図である。
実施の形態1,2に示した面圧緩衝部材61の上面や側面は平坦であったが、実施の形態3では、面圧緩衝部材61における締結穴80の周囲(ボルトまたはワッシャーと接触する領域)を除く部分に、穴加工や凹凸加工を施す。
実施の形態1〜3では、1枚の面圧緩衝部材61に複数の締結穴80が設けられたが、実施の形態4では、1枚の面圧緩衝部材61に締結穴80を1つのみ設ける。つまり、実施の形態4では、図15のように、1つの締結穴80ごとに面圧緩衝部材61が1枚ずつ配設される。それぞれの面圧緩衝部材61は板状である。図15の例では、長方形の面圧緩衝部材61が用いられている。
実施の形態1〜4に示した面圧緩衝部材61の厚さは均一であったが、実施の形態5では、面圧緩衝部材61における締結穴80の周囲の部分(ボルトまたはワッシャーと接触する領域)を、他の部分よりも厚くする。言い換えれば、面圧緩衝部材61における締結穴80の周囲を除く部分を薄くし、面圧緩衝部材61における締結穴80の周囲の部分を、面圧緩衝部材61の厚さ方向に突出させる。
上記の実施の形態では、面圧緩衝部材61はインサート成型によってケース60と一体的に形成されるものとしたが、実施の形態6では、面圧緩衝部材61をケース60とは別体の部品とする。この場合、面圧緩衝部材61とケース60とは、半導体装置の組み立て工程で、接着剤を用いて接合される。なお、接着剤は、面圧緩衝部材61のケース60と接する面にのみ塗布し、ケース60から露出する面(つまり、ボルトおよびヒートシンク50と接する面)には塗布しない。
Claims (20)
- 半導体素子と、
前記半導体素子を搭載したヒートシンクと、
前記ヒートシンクに搭載され前記半導体素子を収納する樹脂製のケースと、
前記ケースおよび前記ヒートシンクを貫通する締結穴と、
を備え、
前記ケースは、平面視で前記締結穴を含む部分に、前記樹脂よりも高い剛性を有する板状の面圧緩衝部材を備える、
半導体装置。 - 少なくとも前記締結穴の周囲において、前記面圧緩衝部材の上面は前記ケースから露出し、前記面圧緩衝部材の下面は前記ヒートシンクに当接する、
請求項1記載の半導体装置。 - 前記締結穴は複数存在し、
前記面圧緩衝部材は、平面視で前記複数の締結穴の全てを含む形状である、
請求項1または請求項2に記載の半導体装置。 - 前記面圧緩衝部材は、前記ケースの外周部に延在する部分と前記ケース内を横断する梁部とを備える、
請求項1から請求項3のいずれか一項に記載の半導体装置。 - 前記面圧緩衝部材は、前記ケースの外周部に延在するフレーム状である、
請求項1から請求項3のいずれか一項に記載の半導体装置。 - 前記面圧緩衝部材は、前記ケース内を横断する梁部を備える、
請求項5に記載の半導体装置。 - 前記締結穴および前記面圧緩衝部材はそれぞれ複数存在し、
前記複数の面圧緩衝部材の各々は、平面視で少なくとも1つの締結穴を含む形状である、
請求項1または請求項2に記載の半導体装置。 - 前記複数の面圧緩衝部材は、全て同じ形状である、
請求項7に記載の半導体装置。 - 前記複数の面圧緩衝部材の少なくとも1つは、前記ケースの隣接する2辺に延在するL字型である、
請求項7または請求項8に記載の半導体装置。 - 前記複数の面圧緩衝部材の少なくとも1つは、前記ケースの外周部に延在する部分と前記ケース内を横断する部分とを含むフレーム状である、
請求項7または請求項8に記載の半導体装置。 - 前記面圧緩衝部材は、前記締結穴の周囲を除く部分に、貫通穴、凹部およびディンプルのうちのいずれかが形成されている、
請求項1から請求項10のいずれか一項に記載の半導体装置。 - 前記面圧緩衝部材は、平面視で前記ケースに内包されている、
請求項1から請求項11のいずれか一項に記載の半導体装置。 - 前記面圧緩衝部材は、前記締結穴の周囲の部分が他の部分よりも厚く形成されている、
請求項1から請求項12のいずれか一項に記載の半導体装置。 - 前記面圧緩衝部材は、前記締結穴の周囲の部分の側面に凹凸が形成されている、
請求項13に記載の半導体装置。 - 前記面圧緩衝部材は、前記ケースにインサート成型されている、
請求項1から請求項14のいずれか一項に記載の半導体装置。 - 前記面圧緩衝部材は、前記ケースに接着剤を用いて接着されている、
請求項1から請求項14のいずれか一項に記載の半導体装置。 - 前記面圧緩衝部材は、前記樹脂よりも高い熱伝導率を有する、
請求項1から請求項16のいずれか一項に記載の半導体装置。 - 前記面圧緩衝部材の材料はFeである、
請求項1から請求項16のいずれか一項に記載の半導体装置。 - 前記面圧緩衝部材の材料はCuである、
請求項1から請求項16のいずれか一項に記載の半導体装置。 - 前記締結穴に挿入され、前記ケースおよび前記ヒートシンクを外部の筐体に締結するボルトをさらに備え、
前記面圧緩衝部材は前記ボルトと同じ材質である、
請求項1から請求項16のいずれか一項に記載の半導体装置。
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