JP5251991B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP5251991B2 JP5251991B2 JP2011005961A JP2011005961A JP5251991B2 JP 5251991 B2 JP5251991 B2 JP 5251991B2 JP 2011005961 A JP2011005961 A JP 2011005961A JP 2011005961 A JP2011005961 A JP 2011005961A JP 5251991 B2 JP5251991 B2 JP 5251991B2
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- metal block
- region
- plating
- semiconductor element
- cooling plate
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Description
図1は、本発明の第1の実施の形態に係る半導体モジュール1の外観を例示する斜視図であり、(A)は、上方から見た斜視図であり、(B)は、下方から見た斜視図である。尚、搭載状態に応じて上下方向が異なるが、以下では、便宜上、半導体モジュール1の冷却板側を下方とする。また、用語の定義として、「中心側」または「中央側」とは、半導体モジュール1の中心O(図1(A)参照)を基準とする。尚、中心Oは凡そであればよく、厳密に決定されるべき性質のものでない。図2は、図1の半導体モジュール1の要部要素を便宜上分解して例示する分解斜視図である。
第2の実施の形態では、第1の実施の形態に係る金属ブロック30とは異なる粗化領域を設けた金属ブロック30Aを例示する。なお、第2の実施の形態において、既に説明した実施の形態と同一構成部についての説明は省略する。
第3の実施の形態では、めっき領域30aに第2の実施の形態とは形状の異なる凹部が設けられた金属ブロック30Bを例示する。なお、第3の実施の形態において、既に説明した実施の形態と同一構成部についての説明は省略する。
第4の実施の形態では、第1の実施の形態に係る金属ブロック30とは異なるめっき領域及び粗化領域を設けた金属ブロック30Cを例示する。なお、第4の実施の形態において、既に説明した実施の形態と同一構成部についての説明は省略する。
第5の実施の形態では、第1の実施の形態に係る金属ブロック30、第2の実施の形態に係る金属ブロック30A、第3の実施の形態に係る金属ブロック30B、又は第4の実施の形態に係る金属ブロック30Cを備えた半導体モジュール1を含むハイブリッドシステムを例示する。なお、第5の実施の形態において、既に説明した実施の形態と同一構成部についての説明は省略する。
10 半導体素子
20 配線部材
20a 端子
22 配線部材
22a 端子
30,30A,30B,30C 金属ブロック
30a,30d,31a めっき領域
30b,30e,31b,32b 粗化領域
30c 半導体素子設置領域
30x 切り欠き部
31 フープ材
32 金属板
35,36,37 凹部
35a 楔状部
35b 矩形状部
39 金型
40 絶縁シート
50 冷却板
50a 冷却板の下面
50b 冷却板の側面
50c 冷却板の上面
51 薄肉部
52 締結部
53 締結穴
54 フィン
55 シール部
60 樹脂モールド部
62 延長側部
66 リブ部
80 はんだ層
82 はんだ層
90 ドライブ基板
100 流路形成部材
102 冷却媒体流路
106 ネジ穴
108 シール部
109 支持面
110 ボルト
120 シール材
600 ハイブリッドシステム
602 電池
610 インバータ
612 IPM
616 DC/DC昇圧コンバータ
620,622 モータジェネレータ
Claims (6)
- 金属ブロックと、
前記金属ブロックの一方の面に設けられた半導体素子設置領域にはんだ層を介して設置された半導体素子と、
前記金属ブロック及び前記半導体素子に樹脂をモールドして形成されるモールド部と、を有し、
前記金属ブロックの一方の面は、粗化領域と、帯状に形成されためっき領域と、を含み、
前記めっき領域には複数の凹部が形成されており、
前記半導体素子設置領域は、前記めっき領域に設けられている半導体モジュール。 - 前記凹部は、底部の面積よりも開口部の面積が小さくなるように形成されている部分を含む請求項1記載の半導体モジュール。
- 前記粗化領域は、前記めっき領域の両側に帯状に形成されている請求項1又は2記載の半導体モジュール。
- 前記金属ブロックの一方の面は、前記金属ブロックの一部に圧入された前記金属ブロックとは異なる材料からなる金属板の上面を含み、
前記金属板の上面は粗化領域とされており、
前記金属ブロックの一方の面の前記金属板の上面を除く領域はめっき領域とされている請求項1乃至3の何れか一項記載の半導体モジュール。 - 前記半導体素子設置領域は、前記金属ブロックの一方の面に複数個設けられている請求項1乃至4の何れか一項記載の半導体モジュール。
- 請求項1乃至5の何れか一項記載の半導体モジュールを含むハイブリッドシステム。
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JP2011005961A JP5251991B2 (ja) | 2011-01-14 | 2011-01-14 | 半導体モジュール |
DE102012100137.5A DE102012100137B4 (de) | 2011-01-14 | 2012-01-10 | Halbleitermodul, Verfahren zur Herstellung desselben und System mit demselben |
US13/349,993 US8742556B2 (en) | 2011-01-14 | 2012-01-13 | Semiconductor module |
CN201210013261.8A CN102593091B (zh) | 2011-01-14 | 2012-01-13 | 半导体模块 |
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JP2011005961A JP5251991B2 (ja) | 2011-01-14 | 2011-01-14 | 半導体モジュール |
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JP (1) | JP5251991B2 (ja) |
CN (1) | CN102593091B (ja) |
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EP2922087A4 (en) * | 2012-11-15 | 2016-03-23 | Nissan Motor | AU-BASED WELD CHIP FIXING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
USD739349S1 (en) * | 2013-02-12 | 2015-09-22 | IDEMITSU KOGYO Co., LTD. | Current plate for insulation washer for power transformer |
JP6360035B2 (ja) * | 2013-03-15 | 2018-07-18 | 三菱電機株式会社 | 半導体装置 |
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JP6065973B2 (ja) | 2013-05-09 | 2017-01-25 | 三菱電機株式会社 | 半導体モジュール |
JP6123500B2 (ja) * | 2013-06-05 | 2017-05-10 | 住友電気工業株式会社 | 半導体モジュール |
JP2015023211A (ja) * | 2013-07-22 | 2015-02-02 | ローム株式会社 | パワーモジュールおよびその製造方法 |
DE102013110815B3 (de) * | 2013-09-30 | 2014-10-30 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung |
US9282649B2 (en) * | 2013-10-08 | 2016-03-08 | Cisco Technology, Inc. | Stand-off block |
JP6237312B2 (ja) * | 2014-02-17 | 2017-11-29 | 株式会社デンソー | 電力変換装置 |
US9148946B1 (en) * | 2014-03-28 | 2015-09-29 | Deere & Company | Electronic assembly for an inverter |
JP6183556B2 (ja) | 2014-06-23 | 2017-08-23 | 富士電機株式会社 | 冷却器一体型半導体モジュール |
JP2016025144A (ja) * | 2014-07-17 | 2016-02-08 | イビデン株式会社 | 回路基板及びその製造方法 |
JP6385234B2 (ja) * | 2014-10-16 | 2018-09-05 | 三菱電機株式会社 | 半導体装置 |
JP6168082B2 (ja) * | 2015-02-27 | 2017-07-26 | トヨタ自動車株式会社 | 電力変換装置 |
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JP6444537B2 (ja) * | 2015-12-16 | 2018-12-26 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP6885175B2 (ja) | 2017-04-14 | 2021-06-09 | 富士電機株式会社 | 半導体装置 |
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JP6762271B2 (ja) * | 2017-06-26 | 2020-09-30 | 三菱電機株式会社 | 半導体装置 |
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WO2019012679A1 (ja) * | 2017-07-14 | 2019-01-17 | 新電元工業株式会社 | 電子モジュール |
CN111406311A (zh) * | 2017-11-10 | 2020-07-10 | 新电元工业株式会社 | 电子模块以及电子模块的制造方法 |
US11227810B2 (en) * | 2017-11-10 | 2022-01-18 | Shindengen Electric Manufacturing Co., Ltd. | Electronic module with a groove and press hole on the surface of a conductor |
JP6972174B2 (ja) | 2017-12-13 | 2021-11-24 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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US8742556B2 (en) | 2014-06-03 |
DE102012100137B4 (de) | 2016-01-14 |
DE102012100137A1 (de) | 2012-07-19 |
JP2012146919A (ja) | 2012-08-02 |
CN102593091A (zh) | 2012-07-18 |
CN102593091B (zh) | 2014-08-20 |
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