JP6304243B2 - 半導体装置、半導体装置の製造方法 - Google Patents

半導体装置、半導体装置の製造方法 Download PDF

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JP6304243B2
JP6304243B2 JP2015511072A JP2015511072A JP6304243B2 JP 6304243 B2 JP6304243 B2 JP 6304243B2 JP 2015511072 A JP2015511072 A JP 2015511072A JP 2015511072 A JP2015511072 A JP 2015511072A JP 6304243 B2 JP6304243 B2 JP 6304243B2
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adhesive
dicing
semiconductor device
wafer
surface roughness
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JPWO2014167745A1 (ja
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吉田　一男
一男 吉田
将人 根岸
将人 根岸
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Description

本発明は、ダイシングしたデバイスを接着剤で実装基板に固定する半導体装置及びその半導体装置の製造方法に関する。
ウエハなどを縦及び横にカットし個々のデバイス（チップ）に切り分ける作業はダイシングと呼ばれている。ダイシングには主に３つの方法がある。第１の方法として、ダイヤモンドブレードと呼ばれる極薄の円形刃を高速回転させてウエハをカットするブレードダイシングがある。
第２の方法として、ダイヤモンドの角を使ってウエハに傷を入れ、その後ウエハに機械的応力を与えてウエハをカットするスクライブ・ブレイクがある。第３の方法として、レーザ光を用いてウエハをカットするレーザダイシングがある。レーザダイシングは、レーザエネルギーを集中させてウエハ材料の一部を昇華、溶融、又は電離させることで、ウエハを個々のデバイスに分離するものである。
特許文献１にはレーザダイシングとブレードダイシングを組み合わせたダイシング技術が開示されている。この技術は、ウエハのダイシングストリートに沿ってレーザ光線を照射して加工溝を形成した後に、ブレードを用いて当該加工溝に沿ってウエハを切削するものである。
日本特開２０１２−４４７８号公報
レーザダイシングは、ブレードダイシング及びスクライブ・ブレイクと比べて高スループットかつ高歩留である。さらに、レーザダイシングは、ブレードダイシングよりもカット幅（ダイシングストリート幅）を縮小できるのでデバイス取れ数を増加させることができる。
しかし、レーザダイシングによりウエハ等をダイシングすると、デバイスの側面に溶融物が形成される。デバイス下面を接着剤に接触させてダイボンディングすると、接着剤がデバイス側面の溶融物に沿って這い上がりデバイス上面に達する問題があった。これによりデバイス上面の電極パッドが汚染され電極パッドとワイヤの接合強度を低下させる問題があった。また、導電性の接着剤を用いた場合、デバイス上面に這い上がった接着剤が原因で電気的ショートが起こる問題があった。
また、特許文献１に開示の技術では、ウエハの殆どをブレードダイシングで切削しているので、ブレードの送り速度を早くすることができず生産性を高めることができない問題があった。
本発明は、上述のような課題を解決するためになされたもので、生産性を高めつつ、接着剤の這い上がりを防止できる半導体装置とその半導体装置の製造方法を提供することを目的とする。
本願の発明に係る半導体装置は、実装基板と、該実装基板に塗布された接着剤と、該接着剤により下面が該実装基板と接着されたデバイスと、を備え、該デバイスの側面上部は該デバイスの多孔質で構成された側面下部より表面粗さが小さく、該デバイスの側面は平坦であることを特徴とする。

本願の発明に係る半導体装置の製造方法は、レーザダイシングによりウエハに貫通孔を形成し個々のデバイスに分離するレーザダイシング工程と、該レーザダイシング工程で該デバイスの側面に形成された溶融物をブレード又はエッチングにより除去する除去工程と、該除去工程の後に、接着剤により実装基板と該デバイスの下面とを接着するダイボンド工程と、該接着剤を硬化させる接着剤硬化工程と、を備え、該除去工程では、該デバイスの側面上部に形成された溶融物のみを除去することで、該デバイスの側面上部は該デバイスの側面下部より表面粗さが小さく、該デバイスの側面は平坦となることを特徴とする。
本発明によれば、生産性を高めつつ、接着剤の這い上がりを防止できる半導体装置を提供できる。
本発明の実施の形態１に係る半導体装置の断面図である。 レーザダイシングの様子を示すウエハの断面図である。 溶融物を除去することを示す断面図である。 ダイボンド工程を示す断面図である。 レーザダイシング後のデバイス側面の表面粗さＲｚと、ブレードダイシング後のデバイス側面の表面粗さＲｚを比較する写真である。 デバイス側面の表面粗さＲｚと接着剤がデバイス上面まで這い上がるまでに要する時間とをダイシング方式ごとに示す表である。 本発明の実施の形態２に係る半導体装置の断面図である。 ウエハに溝を形成することを示すウエハの断面図である。 レーザダイシングの様子を示すウエハの断面図である。
本発明の実施の形態に係る半導体装置と半導体装置の製造方法について図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。
実施の形態１．
図１は、本発明の実施の形態１に係る半導体装置の断面図である。半導体装置１０は実装基板１２を備えている。実装基板１２には接着剤１４が塗布されている。接着剤１４により実装基板１２とデバイス１６の下面が接着している。デバイス１６は例えばＧａＡｓなどの化合物半導体で形成されている。デバイス１６の上面は電極パッド１８が形成された能動領域となっている。
デバイス１６の側面上部１６Ａには表面粗さＲｚが１．０μｍ以下のダイシング痕が形成されている。デバイス１６の側面下部１６ＢにはレーザダイシングによりＧａＡｓが溶融してできた溶融物２０が形成されている。溶融物２０はレーザダイシングによるダイシング痕である。溶融物２０は微小なクラックを有する多孔質（ポーラス）であるためデバイス１６の側面下部１６Ｂは表面粗さＲｚが４．０μｍ以上の粗い面となっている。
接着剤１４の一部１４ａは、表面粗さＲｚが大きい側面下部１６Ｂを這い上がっている。しかしながら接着剤１４の一部１４ａは、表面粗さＲｚが小さい側面上部１６Ａには達していない。
半導体装置１０の製造方法を説明する。まずウエハにレーザダイシングを施す。図２は、レーザダイシングの様子を示すウエハの断面図である。レーザ装置５０内で増幅されたあとに放射されるレーザ光５２でウエハ６０をダイシングする。レーザダイシングによりウエハ６０のダイシングストリートに沿って貫通孔５４、５６を形成し個々のデバイス６２、１６、６４に分離する。この工程をレーザダイシング工程と称する。なお周知のとおり、ウエハ６０の下面にはダイシングテープ７０を貼り付けてレーザダイシング工程を実施する。
各デバイスの側面にはレーザダイシングの際に生じた溶融物２０Ａが形成されている。貫通孔５４の幅とその両側の溶融物２０Ａの幅の和はｘ１である。ｘ１は例えば１０〜２０μｍのいずれかである。
次いで、レーザダイシング工程でデバイスの側面に形成された溶融物２０Ａをブレードにより除去する。この工程を除去工程と称する。図３は、溶融物を除去することを示す断面図である。幅がｘ１のブレード１００を貫通孔５４に沿って紙面手前方向（又は奥方向）に送り溶融物２０Ａを除去する。これにより側面上部１６Ａにブレード１００によるダイシング痕を形成して、側面上部１６Ａの表面粗さＲｚを１．０μｍ以下とする。ここでは、溶融物２０Ａ全てを除去せず側面下部に溶融物２０を残す。
次いで、除去工程の後に、接着剤により実装基板とデバイスの下面とを接着する。この工程をダイボンド工程と称する。図４は、ダイボンド工程を示す断面図である。接着剤１４は導電性を有するＡｇペーストであるが、例えば液状又はフィルム状の材料で形成してもよい。
次いで、ダイボンド工程終了から一定の「待機時間」経過後に接着剤を硬化させる。この工程を接着剤硬化工程と称する。接着剤硬化工程では、加熱又はＵＶ照射により接着剤１４を硬化させる。なお、接着剤硬化工程の後に電極パッド１８に適宜ワイヤボンディングを施す。
図５は、レーザダイシング後のデバイス側面の表面粗さＲｚと、ブレードダイシング後のデバイス側面の表面粗さＲｚを比較する写真である。レーザダイシングＡ〜Ｄには、発振周波数が異なる４種類の発振器を用いてレーザダイシングしたときの側面状態と表面粗さが示されている。レーザダイシングではデバイス側面の表面粗さＲｚが４〜１２μｍとなっている。
ブレードダイシングではデバイス側面の表面粗さＲｚは１μｍ以下であった。従って、ブレードダイシングで形成した側面上部１６Ａの表面粗さＲｚは１．０μｍ以下であり、レーザダイシングで形成した側面下部１６Ｂの表面粗さＲｚは４．０μｍ以上である。
図６は、デバイス側面の表面粗さＲｚと接着剤がデバイス上面まで這い上がるまでに要する時間とをダイシング方式ごとに示す表である。レーザダイシングの場合は、デバイス側面の表面粗さＲｚが大きいので接着剤がデバイス上面まで這い上がるのに要する時間が短い。他方、ブレードダイシング又はスクライブ・ブレイクでは、デバイス側面の表面粗さＲｚが小さいので接着剤がデバイス上面まで這い上がるのに要する時間が長い。
本発明の実施の形態１に係る半導体装置１０によればデバイスの側面上部１６Ａの表面粗さＲｚが１．０μｍ以下となっている。よって、ダイボンド工程終了から接着剤硬化工程までの待機時間を長くしても、接着剤１４がデバイス側面を這い上がりデバイス上面に達することを防止できる。待機時間を長く設けることで、生産効率の良いバッチ処理を採用できる。
また、側面上部１６Ａの表面粗さＲｚを小さくしたので、接着剤１４の量が大きくばらついたとしても接着剤１４がデバイス上面に到達することを防止できる。このように、側面上部１６Ａにより接着剤１４の這い上がりを防止できるので、接着剤の選択肢が広がる。例えば、機能性が高い熱伝導接着剤、接合強度を高めることができる接着剤、濡れ性の高い接着剤、又は低粘度の接着剤を用いることができる。
ブレードダイシングでウエハをフルカットしようとすると、ブレードの送り速度を早くすることができず生産性を高めることができない。ところが、本発明の実施の形態１に係る半導体装置の製造方法では、まず高速ダイシングが可能なレーザダイシングでウエハをフルカットし、その後ブレード１００で溶融物２０Ａの一部を除去する。よって、ブレードでウエハをフルカットするよりも短時間でダイシングを終えることができるので、生産性を高めることができる。なお、側面上部の溶融物だけ除去するのは、溶融物全体を除去する場合よりも処理を高速化するためであり、又ブレードの磨耗量低減及びブレード交換作業の頻度を低減するためである。
ところで、ブレードダイシング方式の場合、必要なダイシングストリートの幅は５０〜１００μｍ程度であることが多い。ところが、本発明のレーザダイシングではブレードの幅ｘ１を１０〜２０μｍのいずれかとすることができるので、ダイシングストリートの幅を縮小してデバイス取れ数を増加させることができる。
側面上部１６Ａと側面下部１６Ｂの表面粗さＲｚは上記の値に限定されない。本発明の実施の形態１に係る半導体装置の製造方法を用いて、側面上部１６Ａの表面粗さを側面下部１６Ｂの表面粗さより小さくする限り接着剤１４の這い上がりを防止できる。
本発明の実施の形態１に係るデバイスは、ＧａＡｓに限定されず様々な材料を採用できる。例えばデバイスをセラミックで形成してもよい。溶融物２０はブレード１００で除去したが、ウェットエッチング又はドライエッチングで除去してもよい。除去工程ではデバイスの側面上部の溶融物を除去したが、デバイスの側面全体の溶融物を除去してもよい。接着剤は実装基板とデバイスを接着できるものであればよく、導電性の材料に限定されない。なお、これらの変形は以下の実施の形態２についても応用できる。
実施の形態２．
本発明の実施の形態２に係る半導体装置と半導体装置の製造方法は、実施の形態１との共通点が多いので実施の形態１との相違点を中心に説明する。図７は、本発明の実施の形態２に係る半導体装置の断面図である。この半導体装置は接着剤１４によりデバイス２００の下面が実装基板１２に固定されたものである。
デバイス２００の側面上部２００Ａは斜面になっている。側面上部２００Ａには表面粗さＲｚが１．０μｍ以下のダイシング痕が形成されている。側面下部２００Ｂには、レーザダイシングによりＧａＡｓが溶融してできた溶融物２０が形成されている。溶融物２０はレーザダイシングによるダイシング痕である。そのため、側面下部２００Ｂは表面粗さＲｚが４．０μｍ以上の粗い面となっている。
本発明の実施の形態２に係る半導体装置の製造方法を説明する。まずウエハに溝を形成する。図８は、ウエハに溝を形成することを示すウエハの断面図である。ブレード１００によりウエハ６０に溝１０２を形成する。溝１０２はダイシングストリートに沿って形成する。
次いで、レーザダイシングを行う。図９は、レーザダイシングの様子を示すウエハの断面図である。平面視で溝１０２が形成された部分を、溝１０２の一部を残しつつレーザダイシングして貫通孔２０１、２０２を形成する。これによりウエハを個々のデバイス２００、２０４、２０６に分離する。この工程をレーザダイシング工程と称する。レーザダイシングにより側面下部２００Ｂには溶融物２０が形成される。
次いで、接着剤１４により実装基板１２とデバイス２００の下面とを接着する。この工程はダイボンド工程である。次いで、待機時間を経て、接着剤硬化工程に移る。接着剤硬化工程では加熱又はＵＶ照射により接着剤１４を硬化させる。次いで、適宜ワイヤボンド工程を実施する。
本発明の実施の形態２に係る半導体装置は、まずブレード１００で溝１０２を形成することで表面粗さの小さい側面上部２００Ａを形成する。次いで、側面上部２００Ａを残しつつ、レーザダイシングにより個々のデバイスに分離する。従って、側面上部２００Ａの表面粗さを低くできるので、接着剤の這い上がりを防止できる。なお、ブレード１００ではなくエッチングにより溝１０２を形成しても良い。
１０ 半導体装置、 １２ 実装基板、 １４ 接着剤、 １４ａ 接着剤の一部、 １６ デバイス、 １６Ａ 側面上部、 １６Ｂ 側面下部、 １８ 電極パッド、 ２０,２０Ａ 溶融物、 ５０ レーザ装置、 ５２ レーザ光、 ５４,５６ 貫通孔、 ６０ ウエハ、 ７０ ダイシングテープ、 １００ ブレード、 １０２ 溝、 ２００ デバイス、 ２００Ａ 側面上部、 ２００Ｂ 側面下部、 ２０１,２０２ 貫通孔

Claims (4)

  1. 実装基板と、
    前記実装基板に塗布された接着剤と、
    前記接着剤により下面が前記実装基板と接着されたデバイスと、を備え、
    前記デバイスの側面上部は前記デバイスの多孔質で構成された側面下部より表面粗さが小さく、
    前記デバイスの側面は平坦であることを特徴とする半導体装置。
  2. 前記デバイスの側面上部には表面粗さＲｚが１．０μｍ以下のダイシング痕が形成され、
    前記デバイスの側面下部には表面粗さＲｚが４．０μｍ以上のダイシング痕が形成されたことを特徴とする請求項１に記載の半導体装置。
  3. 前記接着剤の一部は前記側面下部を覆うことを特徴とする請求項１又は２に記載の半導体装置。
  4. レーザダイシングによりウエハに貫通孔を形成し個々のデバイスに分離するレーザダイシング工程と、
    前記レーザダイシング工程で前記デバイスの側面に形成された溶融物をブレード又はエッチングにより除去する除去工程と、
    前記除去工程の後に、接着剤により実装基板と前記デバイスの下面とを接着するダイボンド工程と、
    前記接着剤を硬化させる接着剤硬化工程と、を備え、
    前記除去工程では、前記デバイスの側面上部に形成された溶融物のみを除去することで、前記デバイスの側面上部は前記デバイスの側面下部より表面粗さが小さく、前記デバイスの側面は平坦となることを特徴とする半導体装置の製造方法。
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