TWI511239B - 半導體裝置、半導體裝置之製造方法 - Google Patents

半導體裝置、半導體裝置之製造方法 Download PDF

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Publication number
TWI511239B
TWI511239B TW102142594A TW102142594A TWI511239B TW I511239 B TWI511239 B TW I511239B TW 102142594 A TW102142594 A TW 102142594A TW 102142594 A TW102142594 A TW 102142594A TW I511239 B TWI511239 B TW I511239B
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Taiwan
Prior art keywords
adhesive
laser cutting
semiconductor device
wafer
melt
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TW102142594A
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English (en)
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TW201440179A (zh
Inventor
Kazuo Yoshida
Masato Negishi
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Mitsubishi Electric Corp
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Publication of TW201440179A publication Critical patent/TW201440179A/zh
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Publication of TWI511239B publication Critical patent/TWI511239B/zh

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description

半導體裝置、半導體裝置之製造方法
本發明是關於一種使用接著劑將切割過的元件固定於封裝基板上的半導體裝置及半導體裝置之製造方法。
對晶圓進行縱向及橫向的切割以將其分離成一個個的元件(晶片)的這種作業程序，業界稱為切割。切割主要有3種方法。第一種方法為刀片切割技術，是使一般成為鑽石刀片的極薄圓形刀片產生高速旋轉來切割晶圓。
第二種方法是切割裂片製程，其使用鑽石的稜角在晶圓上產生損傷，然後對晶圓給予機械應力，以此方式來切割晶圓。第三種方法是使用雷射光切割晶圓的雷射切割技術。雷射切割技術是使雷射能量集中，使晶圓材料的一部分昇華、熔融或電離，藉此，使晶圓分離成一個個的元件。
專利文獻1揭示一種將雷射切割技術和刀片切割技術組合在一起的切割技術。此技術是沿著晶圓的切割道照射雷射光以形成加工溝，然後，使用刀片沿著該加工溝切削晶圓。
專利文獻1：日本特開2012-4478號公報
雷射切割技術相較於刀片切割技術及切割裂片技術，有較高的產能。再者，雷射切割技術相較於刀片切割技術，可將切割寬度(切割道寬度)縮得更小，所以，可使元件取得數目增加。
不過，在使用雷射切割技術切割晶圓時，會在元件的側面形成熔融物。當使元件下面與接著劑接觸以進行固晶製程時，接著劑會沿著元件側面的熔融物捲回元件上面而產生問題。於是，元件上面的電極焊墊被污染，使電極焊墊和線路的接合強度下降，造成問題。又，在使用具有導電性的接著劑時，會因為接著劑捲回元件上面而使電路產生短路，造成問題。
又，在專利文獻1所揭示的技術中，幾乎所有的晶圓都用刀片切割技術切削，所以，無法使刀片的送出的速度變快，於是無法提高生產性，進而造成問題。
本發明為為了解決上述課題的發明，目的在提供一種可提高生產性且可防止接著劑捲回的半導體裝置及半導體裝置之製造方法。
【發明所欲解決的課題】
本發明之半導體裝置的特徵在於：包括封裝基板、塗布於該封裝基板上的接著劑及其下面使用該接著劑與該封裝基板接著的元件，該元件的側面上部的表面粗度比該元件的側面下部小。
本發明之半導體裝置之製造方法的特徵在於包括：雷射切割製程，使用雷射切割技術形成貫通孔並分離成一 個個的元件；去除製程，使用刀片或蝕刻技術去除在上述元件的側面藉由上述雷射切割技術所形成的熔融物；固晶製程，在上述去除製程之後使用接著劑接著封裝基板和上述元件的下面；及接著劑硬化製程，使上述接著劑硬化。
藉由本發明，可提供一種生產性高且防止接著劑捲回的半導體裝置。
10‧‧‧半導體裝置
12‧‧‧封裝基板
14‧‧‧接著劑
14a‧‧‧接著劑之一部分
16‧‧‧元件
16A‧‧‧側面上部
16B‧‧‧側面下部
18‧‧‧電極焊墊
20,20A‧‧‧熔融物
50‧‧‧雷射裝置
52‧‧‧雷射光
54,56‧‧‧貫通孔
60‧‧‧晶圓
62,64‧‧‧元件
70‧‧‧切割膠帶
100‧‧‧刀片
102‧‧‧溝
200‧‧‧元件
200A‧‧‧側面上部
200B‧‧‧側面下部
201,202‧‧‧貫通孔
204,206‧‧‧元件
第1圖為本發明第1實施型態之半導體裝置的剖面圖。
第2圖為表示晶圓雷射切割狀態下的晶圓剖面圖。
第3為表示去除熔融物的剖面圖。
第4圖為表示固晶製程的剖面圖。
第5圖為比較雷射切割後的元件側面的表面粗度Rz和刀片切割後的元件側面的表面粗度Rz的照片。
第6圖為表格，其針對切割方式來比較元件側面的表面粗度Rz和接著劑捲回元件上面所需的時間。
第7圖為本發明第2實施型態之半導體裝置的剖面圖。
第8圖為表示在晶圓上形成溝的晶圓剖面圖。
第9圖為表示晶圓雷射切割狀態下的晶圓剖面圖。
關於本發明實施型態之半導體裝置及半導體裝置之製造方法，在此將參照圖面來進行說明。相同或對應的構成要素附加相同的符號，有時不再重複說明。
第1實施型態.
第1圖為本發明第1實施型態之半導體裝置的剖面圖。半導體裝置10包括封裝基板12。在封裝基板12上塗布接著劑14，再使用接著劑14接著封裝基板12和元件16的下面。元件16可藉由GaAs(砷化鎵)等化合物半導體來形成。元件16的上面為形成有電極焊墊18的能動區域。
在元件16的側面上部16A，形成表面粗度Rz為1.0μm以下的切痕。在元件16的側面下部16B，使用雷射切割技術形成砷化鎵熔融而成的熔融物20。熔融物20為使用雷射切割技術所形成的切痕。熔融物20為具有微小裂縫的多孔物質(porous)，所以，元件16的側面下部16B為表面粗度Rz4.0μm以上的粗面。
接著劑14的一部分14a捲起表面粗度Rz較大的側面下部16B。然而，接著劑14的一部分14a不會回到表面粗度Rz較小的側面上部16A。
在此說明半導體裝置10的製造方法。首先，對晶圓進行雷射切割。第2圖為表示晶圓雷射切割狀態下的晶圓剖面圖。其使用在雷射裝置50內增幅之後而放射的雷射光52，對晶圓60進行切割。藉由雷射切割，沿著晶圓60的切割道形成貫通孔54,56，分離成一個個的元件62,16,64。此製程稱為雷射切割製程。此外，如一般周知，對晶圓60的下面貼附切割膠帶70，實施雷射切割。
在各膠帶的側面，形成雷射切割時所產生的熔融物20A。貫通孔54的寬度和其兩側的熔融物20A的寬度的和 為×1。×1可為10~20μm之間的任何一數值。
接著，在雷射切割製程中使用刀片去除在膠帶的側面所形成的熔融物20A。此製程稱為去除製程。第3為表示去除熔融物的剖面圖。沿著貫通孔54朝向紙面方向(或深度方向)送出寬度為×1的刀片100，去除熔融物20A。藉此，在側面上部16A形成刀片100所造成的切痕，使側面上部16A的表面粗度Rz在1.0μm以下。在此，不去除所有的熔融物20A，在側面下部保留熔融物20。
接著，在去除製程之後，使用接著劑接著封裝基板和元件的下面。此製程稱為固晶製程。第4圖為表示固晶製程的剖面圖。接著劑14為具有導電性的銀膠，其亦可用液狀或薄膜狀的材料來形成。
接著，固晶製程完畢之後，經過一定的「待命時間」，使接著劑硬化。此製程稱為接著劑硬化製程。在接著劑硬化製程中，藉由加熱或UV照射來使接著劑14硬化。此外，在接著劑硬化製程之後，對電極焊墊18施以適宜的線路接合作業。
第5圖為比較雷射切割後的元件側面的表面粗度Rz和刀片切割後的元件側面的表面粗度Rz的照片。雷射切割技術A~D表示使用振動頻率不同的4種振動器進行雷射切割時的側面狀態和表面粗度。藉由雷射切割，元件側面的表面粗度Rz為4~12μm。
藉由刀片切割，元件側面的表面粗度Rz在1μm以下。於是，使用刀片切割技術所形成的側面上部16A的表面 粗度在1.0μm以下，使用雷射切割技術所形成的側面下部16B的表面粗度在4.0μm以上。
第6圖為表格，其針對切割方式來比較元件側面的表面粗度Rz和接著劑捲回元件上面所需的時間。當採用雷射切割時，元件側面的表面粗度Rz較大，所以，接著劑捲回元件上面所需要的時間較短。另一方面，當採用刀片切割技術或切割裂片技術時，元件側面的表面粗度Rz較小，所以，接著劑捲回元件上面所需要的時間較長。
根據本發明第1實施型態之半導體裝置10，元件的側面上部16A的表面粗度Rz在1.0μm以下。於是，即使從固晶製程結束到接著劑硬化製程之前的待命時間拉長，也可防止接著劑14在元件側面捲起，到達元件上面。藉由將待命時間設定得較長，可採用生產效率良好批次處理。
又，由於已使側面上部16A的表面粗度Rz變得較小，所以，即使接著劑14的量很嚴重地不均一，也能防止接著劑14到達元件上面。如此，藉由側面上部16A，可防止接著劑14的捲回，所以，接著劑的選擇範圍增大。例如，可採用機能性高的熱傳導接著劑、能提高接合強度的接著劑，可濕性高的接著劑或低黏度的接著劑。
當使用刀片切割技術對晶圓進行完全切割時，無法使刀片的送出速度變快，於是無法提高生產性。然而，在本發明第1實施型態之半導體裝置之製造方法中，首先，使用可進行高速切割的雷射切割技術對晶圓進行完全切割，然後，使用刀片100去除熔融物20A的一部分。於是，相較於使用刀片 對晶圓進行完全切割，更能以短時間完成切割製程，所以，可提高生產性。此外，之所以僅去除側面上部的熔融物，是因為相較於去除整個熔融物，更能進行高速處理，同時也可減低刀片的磨耗量和刀片更換作業的頻率。
然而，當採用刀片切割技術時，所需要的切割道的寬度大多為50~100μm。然而，在本發明的雷射切割技術中，可使刀片的寬度×1在10~20μm之間的任一數值，所以，可縮小切割道的寬度，使元件取得數目增加。
側面上部16A和側面下部16B的表面粗度Rz不受上述的值所限定。只要使用本發明第1實施型態之半導體裝置之製造方法，使側面上部16A的表面粗度比側面下部16B的表面粗度小，就能防止接著劑14的捲回。
本發明第1實施型態之元件不限定於砷化鎵，可採用各種材料。例如，可用陶瓷來形成元件。熔融物20在說明書中使用刀片100去除，然而亦可使用濕蝕刻技術或乾蝕刻技術來去除。在去除製程中去除了元件的側面上部的熔融物，不過亦可去除元件的整個側面的熔融物。接著劑只要能接著封裝基板和元件，就不限於非使用導電性材料不可。此外，這些變形亦可應用於以下的第2實施型態。
第2實施型態.
本發明第2實施型態之半導體裝置及半導體裝置之製造方法和第1實施型態的共通點很多，所以，以和第1實施型態的不同點為主來進行說明。第7圖為本發明第2實施型態之半導體裝置的剖面圖。此半導體裝置使用接著劑14將元件200的 下面固定於封裝基板12。
元件200的側面上部200A為斜面。在側面上部200A上，形成表面粗度Rz為1.0μm以下的切痕。在側面下部200B上，以雷射切割技術形成砷化鎵熔融而成的熔融物20。熔融物20為雷射切割技術所產生的切痕。因此，側面下部200B為表面粗度Rz為4.0μm以上的粗面。
在此說明本發明第2實施型態之半導體裝置之製造方法。首先，在晶圓上形成溝。第8圖為表示在晶圓上形成溝的晶圓剖面圖。使用刀片100對晶圓60形成溝102。溝102沿著切割道而形成。
接著，進行雷射切割。第9圖為表示晶圓雷射切割狀態下的晶圓剖面圖。從平面角度所看到形成溝102的部分保留溝102的一部分，然後進行雷射切割，形成貫通孔201,202。藉此，使晶圓分離成一個個的元件200,204,206。此製程稱為雷射切割製程。藉由雷射切割，在側面下部200B形成熔融物20。
接著，使用接著劑14接著封裝基板12和元件200的下面。此製程稱為固晶製程。接著，經過待命時間，進入接著劑硬化製程。在接著劑硬化製程中，藉由加熱或UV照射使接著劑14硬化。然後，實施適宜的線路接合作業。
關於本發明第2實施型態之半導體裝置，首先使用刀片100形成溝102，藉此形成表面粗度較小的側面上部200A。接著，保留側面上部200A，使用雷射切割技術分離成一個個的元件。這樣，就可以降低側面上部200A的表面粗度， 於是可防止接著劑捲回去。此外，也可以不使用刀片100而使用蝕刻技術來形成溝102。
10‧‧‧半導體裝置
12‧‧‧封裝基板
14‧‧‧接著劑
14a‧‧‧接著劑之一部分
16‧‧‧元件
16A‧‧‧側面上部
16B‧‧‧側面下部
18‧‧‧電極焊墊
20‧‧‧熔融物

Claims (5)

  1. 一種半導體裝置，包括：封裝基板；接著劑，塗布於上述封裝基板上；及元件，其下面使用上述接著劑與上述封裝基板接著；其特徵在於：上述元件的側面上部的表面粗度比上述元件的側面下部小，且上述元件的側面下部包括多孔物質。
  2. 如申請專利範圍第1項之半導體裝置，其中，在上述元件的側面上部形成表面粗度Rz為1.0μm以下的切痕，在上述元件的側面下部形成表面粗度Rz為4.0μm以上的切痕。
  3. 一種半導體裝置之製造方法，其特徵在於包括：雷射切割製程，使用雷射切割技術形成貫通孔並分離成一個個的元件；去除製程，其中上述雷射切割製程於上述元件的側面形成熔融物，其中該去除製程使用刀片或蝕刻技術且僅去除上述熔融物中位於上述元件的側面上部的部分；固晶製程，在上述去除製程之後使用接著劑接著封裝基板和上述元件的下面；及接著劑硬化製程，使上述接著劑硬化。
  4. 如申請專利範圍第3項之半導體裝之製造方法，其中，在上述去除製程中，僅去除於上述元件的側面上部所形成的熔融物。
  5. 一種半導體裝置之製造方法，其特徵在於包括： 溝形成製程，使用刀片或蝕刻技術在晶圓上形成溝；雷射切割製程，對於從平面角度看起來形成上述溝的部分保留上述溝的一部分，並進行雷射切割，形成貫通孔，將上述晶圓分離成一個個的元件；固晶製程，使用接著劑接著封裝基板和上述元件的下面；及接著劑硬化製程，使上述接著劑硬化。
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