JP7156590B2 - 基板を製造する方法および基板を製造する為のシステム - Google Patents
基板を製造する方法および基板を製造する為のシステム Download PDFInfo
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- JP7156590B2 JP7156590B2 JP2021079840A JP2021079840A JP7156590B2 JP 7156590 B2 JP7156590 B2 JP 7156590B2 JP 2021079840 A JP2021079840 A JP 2021079840A JP 2021079840 A JP2021079840 A JP 2021079840A JP 7156590 B2 JP7156590 B2 JP 7156590B2
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Description
Claims (11)
- 基板(18)の製造方法であって、
第1面(4)と前記第1面(4)の反対側の第2面(6)とを有するワークピース(2)を準備するステップと、
第1面(12)と前記第1面(12)の反対側の第2面(14)とを有するキャリア(10)を準備するステップと、
前記キャリア(10)を前記ワークピース(2)に付けるステップであって、前記キャリア(10)の前記第1面(12)の少なくとも周辺部分(16)が前記ワークピース(2)の前記第1面(4)に付けられるステップと、
前記ワークピース(2)の内側に改質層(8)を形成するステップと、
前記ワークピース(2)を前記改質層(8)に沿って分割するステップであって、それにより、前記基板(18)に前記キャリア(10)が付けられる、ステップと、
前記キャリア(10)の中央部分(24)において、前記キャリア(10)の前記第2面(14)側からキャリア材料を除去するステップであって、前記キャリア(10)に凹部(26)を形成するステップと、
を含み、
前記キャリア(10)の前記第1面(12)の少なくとも周辺部分(16)は、前記キャリア(10)の前記第1面(12)が前記ワークピース(2)の前記第1面(4)に直接接触するように、前記ワークピース(2)の前記第1面(4)に付けられており、
前記方法は、前記基板(18)から前記キャリア(10)を除去するステップを更に含む、方法。 - 前記キャリア(10)が付けられた前記基板(18)側の前記基板(18)の表面(20)の一部分が、前記キャリア材料を除去するステップ中に露出される、請求項1に記載の方法。
- 前記方法は、前記基板(18)の前記表面(20)の露出部分を処理するステップを更に含む、請求項2に記載の方法。
- 前記キャリア(10)の前記第1面(12)の全体が前記ワークピース(2)の前記第1面(4)に付けられているか、前記キャリア(10)の前記第1面(12)の前記周辺部分(16)のみが前記ワークピース(2)の前記第1面(4)に付けられている、請求項1~3のいずれか一項に記載の方法。
- 前記キャリア(10)の前記第1面(12)の少なくとも周辺部分(16)は、前記ワークピース(2)の前記第1面(4)に融着および/または陽極接合により付けられている、請求項1~4のいずれか一項に記載の方法。
- 前記キャリア(10)の前記中央部分(24)における前記キャリア(10)の前記第2面(14)側からキャリア材料を除去するステップは、前記キャリア(10)を研削する工程、及び/又は、前記キャリア(10)を研磨する工程、及び/又は、前記キャリア(10)を切断する工程、及び/又は、前記キャリア(10)をエッチングする工程を含む、請求項1~5のいずれか一項に記載の方法。
- 前記キャリア(10)のエッチング工程は、前記キャリア(10)のプラズマエッチングおよび/または前記キャリア(10)のドライエッチングおよび/または前記キャリア(10)のウェットエッチングからなる、請求項6に記載の方法。
- 前記キャリア(10)を切断する工程は、前記キャリア(10)を切断するブレードおよび/または前記キャリア(10)を切断するレーザおよび/または前記キャリア(10)を切断するプラズマを含む、または、前記キャリア(10)を切断するブレードおよび/または前記キャリア(10)を切断するレーザおよび/または前記キャリア(10)を切断するプラズマからなる、請求項6または7に記載の方法。
- 前記ワークピース(2)の内側に前記改質層(8)を形成するステップは、前記ワークピース(2)にレーザビーム(LB)を加える工程を含む、又は、前記ワークピース(2)にレーザビーム(LB)を加える工程から成る、請求項1~8のいずれか一項に記載の方法。
- 前記ワークピース(2)は、前記レーザビーム(LB)に対して透過性を有する材料から作られる、請求項9に記載の方法。
- 基板(18)を製造する為のシステムにおいて、
ワークピース(2)を支持する為の支持部材であって、前記ワークピース(2)は、第1面(4)および前記第1面(4)の反対側の第2面(6)を有する、前記支持部材と、
前記ワークピース(2)にキャリア(10)を付けるように構成された付ける手段であって、前記キャリア(10)は、第1面(12)および前記第1面(12)の反対側の第2面(14)を有し、前記キャリア(10)の前記第1面(12)の少なくとも周辺部分(16)は、前記ワークピース(2)の前記第1面に付けられる、前記付ける手段であって、前記キャリア(10)の前記第1面(12)の少なくとも周辺部分(16)は、前記キャリア(10)の前記第1面(12)が前記ワークピース(2)の前記第1面(4)に直接接触するように、前記ワークピース(2)の前記第1面(4)に付けられる、前記付ける手段と、
前記ワークピース(2)の内側に改質層(8)を形成するように構成された改質層形成手段と、
前記改質層(8)に沿って前記ワークピース(2)を分割するように構成される分割手段であって、これにより、前記キャリア(10)が付けられた前記基板(18)を得る、前記分割手段と、
前記キャリア(10)の中央部分(24)において、前記キャリア(10)の前記第2面(14)側からキャリア材料を除去し、前記キャリア(10)に凹部(26)を形成する材料除去手段と、
を備え、
前記システムは、前記基板(18)から前記キャリア(10)を除去するように構成されている、システム。
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