JP6946153B2 - ウエーハの生成方法およびウエーハ生成装置 - Google Patents
ウエーハの生成方法およびウエーハ生成装置 Download PDFInfo
- Publication number
- JP6946153B2 JP6946153B2 JP2017221073A JP2017221073A JP6946153B2 JP 6946153 B2 JP6946153 B2 JP 6946153B2 JP 2017221073 A JP2017221073 A JP 2017221073A JP 2017221073 A JP2017221073 A JP 2017221073A JP 6946153 B2 JP6946153 B2 JP 6946153B2
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- wafer
- axis direction
- manufacturing history
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 34
- 235000012431 wafers Nutrition 0.000 claims description 266
- 238000004519 manufacturing process Methods 0.000 claims description 125
- 239000013078 crystal Substances 0.000 claims description 18
- 230000001678 irradiating effect Effects 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 67
- 239000007788 liquid Substances 0.000 description 30
- 238000004140 cleaning Methods 0.000 description 26
- 239000000758 substrate Substances 0.000 description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 18
- 229910010271 silicon carbide Inorganic materials 0.000 description 17
- 230000032258 transport Effects 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 230000007547 defect Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
- B23K26/048—Automatically focusing the laser beam by controlling the distance between laser head and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
- B23K26/0884—Devices involving movement of the laser head in at least one axial direction in at least two axial directions in at least in three axial directions, e.g. manipulators, robots
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Robotics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Die Bonding (AREA)
Description
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :140kHz
平均出力 :1.0W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.7
集光点のZ軸方向位置 :インゴットの上面から420〜430μm
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :140kHz
平均出力 :14W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.7
集光点のZ軸方向位置 :インゴットの上面から300μm
集光点の送り速度 :765mm/s
インデックス量 :250〜400μm
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :140kHz
平均出力 :1.0W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.7
集光点のZ軸方向位置 :インゴットの上面から100μm
4:保持手段
6:平坦化手段
8:レーザー照射手段
10:ウエーハ剥離手段
12:ウエーハ収容手段
150:インゴット
165:製造履歴(第一の製造履歴形成工程で形成)
166:改質層
168:クラック
170:剥離層
171:製造履歴(第二の製造履歴形成工程で形成)
172:ウエーハ
Claims (4)
- インゴットからウエーハを生成するウエーハの生成方法であって、
インゴットの上面を平坦化する平坦化工程と、
平坦化されたインゴットの上面から2番目に生成すべきウエーハのデバイスが形成されない領域の内部にインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し製造履歴を形成する第一の製造履歴形成工程と、
平坦化されたインゴットの上面からインゴットに対して透過性を有する波長のレーザー光線の集光点を最初に生成すべきウエーハの厚みに相当する深さに位置づけてレーザー光線をインゴットに照射し剥離層を形成する剥離層形成工程と、
平坦化されたインゴットの上面から最初に生成すべきウエーハのデバイスが形成されない領域の内部にインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し製造履歴を形成する第二の製造履歴形成工程と、
インゴットから剥離層を起点として最初に生成すべきウエーハを剥離してウエーハを生成するウエーハ生成工程と、を最初に実施し、
続いて、該平坦化工程と、該第一の製造履歴形成工程と、該剥離層形成工程と、該ウエーハ生成工程と、を順次実施するウエーハの生成方法。 - 該第一の製造履歴形成工程および該第二の製造履歴形成工程において形成される製造履歴は、インゴットのロットナンバー、生成されるウエーハの順番、製造年月日、製造工場、生成に寄与した機種のいずれかが含まれる請求項1記載のウエーハの生成方法。
- インゴットは、第一の面と、該第一の面と反対側の第二の面と、該第一の面から該第二の面に至るc軸と、該c軸に直交するc面とを有する単結晶SiCインゴットであり、該第一の面の垂線に対して該c軸が傾き該c面と該第一の面とでオフ角が形成されており、
該剥離層形成工程において、
単結晶SiCインゴットに対して透過性を有する波長のパルスレーザー光線の集光点を該第一の面から生成すべきウエーハの厚みに相当する深さに位置づけると共に該オフ角が形成される方向と直交する方向に単結晶SiCインゴットと該集光点とを相対的に移動してSiCがSiとCとに分離し次に照射されるパルスレーザー光線が前に形成されたCに吸収されて連鎖的にSiCがSiとCとに分離して形成される直線状の改質層およびクラックを形成し、該オフ角が形成される方向に単結晶SiCインゴットと該集光点とを相対的に移動して所定量インデックスして剥離層を形成する請求項1記載のウエーハの生成方法。 - 請求項1記載のウエーハの生成方法を実施するウエーハ生成装置であって、
インゴットを保持する保持手段と、該保持手段に保持されたインゴットの上面を研削して平坦化する平坦化手段と、該保持手段に保持されたインゴットの上面から生成すべきウエーハの厚みに相当する深さにインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し剥離層を形成する剥離層形成手段と、生成すべきウエーハのデバイスが形成されない領域の内部にインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し製造履歴を形成する製造履歴形成手段と、インゴットの上面を保持し剥離層からウエーハを剥離するウエーハ剥離手段と、剥離されたウエーハを収容するウエーハ収容手段と、
から少なくとも構成されるウエーハ生成装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017221073A JP6946153B2 (ja) | 2017-11-16 | 2017-11-16 | ウエーハの生成方法およびウエーハ生成装置 |
MYPI2018704023A MY195790A (en) | 2017-11-16 | 2018-10-30 | Wafer Producing Method and Wafer Producing Apparatus |
KR1020180137452A KR102491739B1 (ko) | 2017-11-16 | 2018-11-09 | 웨이퍼의 생성 방법 및 웨이퍼 생성 장치 |
CN201811351293.2A CN109801834B (zh) | 2017-11-16 | 2018-11-14 | 晶片的生成方法和晶片生成装置 |
DE102018219424.6A DE102018219424A1 (de) | 2017-11-16 | 2018-11-14 | Waferherstellungsverfahren und waferherstellungsvorrichtung |
US16/192,250 US10755946B2 (en) | 2017-11-16 | 2018-11-15 | Method for producing a wafer from a hexagonal single crystal ingot by applying a laser beam to form a first production history, an exfoliation layer, and a second production history |
TW107140500A TWI782138B (zh) | 2017-11-16 | 2018-11-15 | 晶圓的生成方法及晶圓生成裝置 |
US16/926,851 US20200343102A1 (en) | 2017-11-16 | 2020-07-13 | Wafer producing method and wafer producing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017221073A JP6946153B2 (ja) | 2017-11-16 | 2017-11-16 | ウエーハの生成方法およびウエーハ生成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019091852A JP2019091852A (ja) | 2019-06-13 |
JP6946153B2 true JP6946153B2 (ja) | 2021-10-06 |
Family
ID=66335525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017221073A Active JP6946153B2 (ja) | 2017-11-16 | 2017-11-16 | ウエーハの生成方法およびウエーハ生成装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US10755946B2 (ja) |
JP (1) | JP6946153B2 (ja) |
KR (1) | KR102491739B1 (ja) |
CN (1) | CN109801834B (ja) |
DE (1) | DE102018219424A1 (ja) |
MY (1) | MY195790A (ja) |
TW (1) | TWI782138B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7073172B2 (ja) * | 2018-04-03 | 2022-05-23 | 株式会社ディスコ | ウエーハの生成方法 |
KR102637161B1 (ko) * | 2018-12-21 | 2024-02-16 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
JP7210292B2 (ja) * | 2019-01-15 | 2023-01-23 | 株式会社ディスコ | ウエーハの生成方法 |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
DE102019207990B4 (de) * | 2019-05-31 | 2024-03-21 | Disco Corporation | Verfahren zum Bearbeiten eines Werkstücks und System zum Bearbeiten eines Werkstücks |
DE102020206233B3 (de) | 2020-05-18 | 2021-08-12 | Disco Corporation | Verfahren zum herstellen eines substrats und system zum herstellen eines substrats |
JP7517936B2 (ja) * | 2020-10-01 | 2024-07-17 | 株式会社ディスコ | 加工装置 |
US11848197B2 (en) | 2020-11-30 | 2023-12-19 | Thinsic Inc. | Integrated method for low-cost wide band gap semiconductor device manufacturing |
CN113953122B (zh) * | 2021-12-23 | 2022-03-18 | 苏州优晶光电科技有限公司 | 一种可自动定中心的碳化硅晶锭粘结加工设备及方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5025593A (en) * | 1988-01-18 | 1991-06-25 | Mazda Motor Corporation | Slicing machine and control method thereof |
JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
JP4071476B2 (ja) * | 2001-03-21 | 2008-04-02 | 株式会社東芝 | 半導体ウェーハ及び半導体ウェーハの製造方法 |
US8835802B2 (en) * | 2006-01-24 | 2014-09-16 | Stephen C. Baer | Cleaving wafers from silicon crystals |
JP5917862B2 (ja) | 2011-08-30 | 2016-05-18 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
JP6062315B2 (ja) * | 2013-04-24 | 2017-01-18 | 株式会社ディスコ | ウエーハの加工方法 |
JP6341639B2 (ja) * | 2013-08-01 | 2018-06-13 | 株式会社ディスコ | 加工装置 |
JP2015062946A (ja) * | 2013-09-26 | 2015-04-09 | 株式会社フジクラ | 単結晶ウェハのマーキング方法 |
KR101581372B1 (ko) * | 2014-01-15 | 2016-01-11 | 주식회사 엘지실트론 | 노치리스 웨이퍼 제조 장치 및 이의 제조 방법 |
JP6506520B2 (ja) * | 2014-09-16 | 2019-04-24 | 株式会社ディスコ | SiCのスライス方法 |
JP6391471B2 (ja) * | 2015-01-06 | 2018-09-19 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395632B2 (ja) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP2016171149A (ja) * | 2015-03-11 | 2016-09-23 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP6532273B2 (ja) * | 2015-04-21 | 2019-06-19 | 株式会社ディスコ | ウェーハの加工方法 |
JP6604891B2 (ja) * | 2016-04-06 | 2019-11-13 | 株式会社ディスコ | ウエーハの生成方法 |
-
2017
- 2017-11-16 JP JP2017221073A patent/JP6946153B2/ja active Active
-
2018
- 2018-10-30 MY MYPI2018704023A patent/MY195790A/en unknown
- 2018-11-09 KR KR1020180137452A patent/KR102491739B1/ko active IP Right Grant
- 2018-11-14 DE DE102018219424.6A patent/DE102018219424A1/de active Pending
- 2018-11-14 CN CN201811351293.2A patent/CN109801834B/zh active Active
- 2018-11-15 TW TW107140500A patent/TWI782138B/zh active
- 2018-11-15 US US16/192,250 patent/US10755946B2/en active Active
-
2020
- 2020-07-13 US US16/926,851 patent/US20200343102A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW201933438A (zh) | 2019-08-16 |
JP2019091852A (ja) | 2019-06-13 |
MY195790A (en) | 2023-02-20 |
TWI782138B (zh) | 2022-11-01 |
CN109801834B (zh) | 2024-05-17 |
US20200343102A1 (en) | 2020-10-29 |
US10755946B2 (en) | 2020-08-25 |
DE102018219424A1 (de) | 2019-05-16 |
KR20190056306A (ko) | 2019-05-24 |
CN109801834A (zh) | 2019-05-24 |
KR102491739B1 (ko) | 2023-01-25 |
US20190148164A1 (en) | 2019-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6946153B2 (ja) | ウエーハの生成方法およびウエーハ生成装置 | |
JP6904793B2 (ja) | ウエーハ生成装置 | |
JP7009194B2 (ja) | ウエーハ生成装置および搬送トレー | |
TWI758505B (zh) | 晶圓生成裝置 | |
JP7073172B2 (ja) | ウエーハの生成方法 | |
JP2019029382A (ja) | ウエーハの生成方法およびウエーハ生成装置 | |
US7981770B2 (en) | Wafer machining method for preparing a wafer for dicing | |
KR20180063832A (ko) | SiC 웨이퍼의 생성 방법 | |
US20090011571A1 (en) | Wafer working method | |
CN1285103C (zh) | 用于自衬底切割器件的方法和设备 | |
JP2010253499A (ja) | レーザー加工装置 | |
JP6762651B2 (ja) | 加工方法 | |
JP2022090272A (ja) | ウエーハ生成装置 | |
JP2006303105A (ja) | 半導体ウエーハの加工方法 | |
JP2018093042A (ja) | ウエーハ加工装置及びウエーハの加工方法 | |
TW202305925A (zh) | 晶圓之處理方法 | |
JP2021170613A (ja) | ウエーハの生成方法 | |
JP2020129639A (ja) | デバイスパッケージ形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200914 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210812 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210824 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210915 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6946153 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |