JP2019091852A - ウエーハの生成方法およびウエーハ生成装置 - Google Patents
ウエーハの生成方法およびウエーハ生成装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 151
- 235000012431 wafers Nutrition 0.000 claims description 267
- 238000000034 method Methods 0.000 claims description 62
- 230000001678 irradiating effect Effects 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 20
- 239000010410 layer Substances 0.000 description 68
- 239000007788 liquid Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 17
- 229910010271 silicon carbide Inorganic materials 0.000 description 17
- 238000003860 storage Methods 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 230000004308 accommodation Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02518—Deposited layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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Abstract
Description
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :140kHz
平均出力 :1.0W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.7
集光点のZ軸方向位置 :インゴットの上面から420〜430μm
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :140kHz
平均出力 :14W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.7
集光点のZ軸方向位置 :インゴットの上面から300μm
集光点の送り速度 :765mm/s
インデックス量 :250〜400μm
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :140kHz
平均出力 :1.0W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.7
集光点のZ軸方向位置 :インゴットの上面から100μm
4:保持手段
6:平坦化手段
8:レーザー照射手段
10:ウエーハ剥離手段
12:ウエーハ収容手段
150:インゴット
165:製造履歴(第一の製造履歴形成工程で形成)
166:改質層
168:クラック
170:剥離層
171:製造履歴(第二の製造履歴形成工程で形成)
172:ウエーハ
Claims (4)
- インゴットからウエーハを生成するウエーハの生成方法であって、
インゴットの上面を平坦化する平坦化工程と、
平坦化されたインゴットの上面から2番目に生成すべきウエーハのデバイスが形成されない領域の内部にインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し製造履歴を形成する第一の製造履歴形成工程と、
平坦化されたインゴットの上面からインゴットに対して透過性を有する波長のレーザー光線の集光点を最初に生成すべきウエーハの厚みに相当する深さに位置づけてレーザー光線をインゴットに照射し剥離層を形成する剥離層形成工程と、
平坦化されたインゴットの上面から最初に生成すべきウエーハのデバイスが形成されない領域の内部にインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し製造履歴を形成する第二の製造履歴形成工程と、
インゴットから剥離層を起点として最初に生成すべきウエーハを剥離してウエーハを生成するウエーハ生成工程と、を最初に実施し、
続いて、該平坦化工程と、該第一の製造履歴形成工程と、該剥離層形成工程と、該ウエーハ生成工程と、を順次実施するウエーハの生成方法。 - 該第一の製造履歴形成工程および該第二の製造履歴形成工程において形成される製造履歴は、インゴットのロットナンバー、生成されるウエーハの順番、製造年月日、製造工場、生成に寄与した機種のいずれかが含まれる請求項1記載のウエーハの生成方法。
- インゴットは、第一の面と、該第一の面と反対側の第二の面と、該第一の面から該第二の面に至るc軸と、該c軸に直交するc面とを有する単結晶SiCインゴットであり、該第一の面の垂線に対して該c軸が傾き該c面と該第一の面とでオフ角が形成されており、
該剥離層形成工程において、
単結晶SiCインゴットに対して透過性を有する波長のパルスレーザー光線の集光点を該第一の面から生成すべきウエーハの厚みに相当する深さに位置づけると共に該オフ角が形成される方向と直交する方向に単結晶SiCインゴットと該集光点とを相対的に移動してSiCがSiとCとに分離し次に照射されるパルスレーザー光線が前に形成されたCに吸収されて連鎖的にSiCがSiとCとに分離して形成される直線状の改質層およびクラックを形成し、該オフ角が形成される方向に単結晶SiCインゴットと該集光点とを相対的に移動して所定量インデックスして剥離層を形成する請求項1記載のウエーハの生成方法。 - 請求項1記載のウエーハの生成方法を実施するウエーハ生成装置であって、
インゴットを保持する保持手段と、該保持手段に保持されたインゴットの上面を研削して平坦化する平坦化手段と、該保持手段に保持されたインゴットの上面から生成すべきウエーハの厚みに相当する深さにインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し剥離層を形成する剥離層形成手段と、生成すべきウエーハのデバイスが形成されない領域の内部にインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し製造履歴を形成する製造履歴形成手段と、インゴットの上面を保持し剥離層からウエーハを剥離するウエーハ剥離手段と、剥離されたウエーハを収容するウエーハ収容手段と、
から少なくとも構成されるウエーハ生成装置。
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