JP2019029382A - ウエーハの生成方法およびウエーハ生成装置 - Google Patents
ウエーハの生成方法およびウエーハ生成装置 Download PDFInfo
- Publication number
- JP2019029382A JP2019029382A JP2017143841A JP2017143841A JP2019029382A JP 2019029382 A JP2019029382 A JP 2019029382A JP 2017143841 A JP2017143841 A JP 2017143841A JP 2017143841 A JP2017143841 A JP 2017143841A JP 2019029382 A JP2019029382 A JP 2019029382A
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- wafer
- laser beam
- axis direction
- peeling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 83
- 235000012431 wafers Nutrition 0.000 claims description 290
- 238000000034 method Methods 0.000 claims description 102
- 230000001678 irradiating effect Effects 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 230000032798 delamination Effects 0.000 claims 2
- 238000004299 exfoliation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 76
- 239000007788 liquid Substances 0.000 description 30
- 238000004140 cleaning Methods 0.000 description 25
- 239000000758 substrate Substances 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- 238000003860 storage Methods 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0408—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work for planar work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Abstract
Description
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :80kHz
平均出力 :3.2W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.43
集光点のZ軸方向位置 :インゴットの上面から300μm
集光点の送り速度 :120〜260mm/s
インデックス量 :250〜400μm
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :80kHz
平均出力 :1.0W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.43
集光点のZ軸方向位置 :インゴットの上面から100μm
4:保持手段
6:平坦化手段
8:レーザー照射手段
10:ウエーハ剥離手段
12:ウエーハ収容手段
150:インゴット
150a:第一のインゴット
150b:第二のインゴット
150c:第三のインゴット
150d:第四のインゴット
152:第一の面
154:第二の面
α:オフ角
A:オフ角が形成される方向
166:改質層
168:クラック
170:剥離層
171:製造履歴
172:ウエーハ
LB:パルスレーザー光線
FP:集光点
Claims (5)
- インゴットからウエーハを生成するウエーハの生成方法であって、
生成すべきウエーハのデバイスが形成されない領域の内部にインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線を照射し製造履歴を形成する製造履歴形成工程を少なくとも備えたウエーハの生成方法。 - インゴットからウエーハを生成するウエーハの生成方法であって、
インゴットの上面を平坦化する平坦化工程と、
平坦化されたインゴットの上面から生成すべきウエーハの厚みに相当する深さにインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し剥離層を形成する剥離層形成工程と、
生成すべきウエーハのデバイスが形成されない領域の内部にインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し製造履歴を形成する製造履歴形成工程と、
インゴットから剥離層を起点として生成すべきウエーハを剥離してウエーハを生成するウエーハ生成工程と、
から、少なくとも構成されるウエーハの生成方法。 - 該製造履歴形成工程において形成する製造履歴は、インゴットのロットナンバー、生成されるウエーハの順番、製造年月日、製造工場、生成に寄与した機種のいずれかが含まれる請求項1又は2記載のウエーハの生成方法。
- インゴットは、第一の面と、該第一の面と反対側の第二の面と、該第一の面から該第二の面に至るc軸と、該c軸に直交するc面とを有する単結晶SiCインゴットであり、該第一の面の垂線に対して該c軸が傾き該c面と該第一の面とでオフ角が形成されており、
該剥離層形成工程において、
単結晶SiCインゴットに対して透過性を有する波長のパルスレーザー光線の集光点を該第一の面から生成すべきウエーハの厚みに相当する深さに位置づけると共に該オフ角が形成される方向と直交する方向に単結晶SiCインゴットと該集光点とを相対的に移動してSiCがSiとCとに分離し次に照射されるパルスレーザー光線が前に形成されたCに吸収されて連鎖的にSiCがSiとCとに分離して形成される直線状の改質層およびクラックを形成し、該オフ角が形成される方向に単結晶SiCインゴットと該集光点とを相対的に移動して所定量インデックスして剥離層を形成する請求項2記載のウエーハの生成方法。 - インゴットからウエーハを生成するウエーハ生成装置であって、
インゴットを保持する保持手段と、該保持手段に保持されたインゴットの上面を研削して平坦化する平坦化手段と、該保持手段に保持されたインゴットの上面から生成すべきウエーハの厚みに相当する深さにインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し剥離層を形成する剥離層形成手段と、生成すべきウエーハのデバイスが形成されない領域の内部にインゴットに対して透過性を有する波長のレーザー光線の集光点を位置づけてレーザー光線をインゴットに照射し製造履歴を形成する製造履歴形成手段と、インゴットの上面を保持し剥離層からウエーハを剥離するウエーハ剥離手段と、剥離されたウエーハを収容するウエーハ収容手段と、
から少なくとも構成されるウエーハ生成装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017143841A JP2019029382A (ja) | 2017-07-25 | 2017-07-25 | ウエーハの生成方法およびウエーハ生成装置 |
US16/039,626 US20190030651A1 (en) | 2017-07-25 | 2018-07-19 | Wafer producing method and wafer producing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017143841A JP2019029382A (ja) | 2017-07-25 | 2017-07-25 | ウエーハの生成方法およびウエーハ生成装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2019029382A true JP2019029382A (ja) | 2019-02-21 |
Family
ID=65138183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017143841A Pending JP2019029382A (ja) | 2017-07-25 | 2017-07-25 | ウエーハの生成方法およびウエーハ生成装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20190030651A1 (ja) |
JP (1) | JP2019029382A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021203616A1 (de) | 2020-04-17 | 2021-10-21 | Disco Corporation | Waferherstellungsverfahren |
DE102022206233A1 (de) | 2021-06-29 | 2022-12-29 | Disco Corporation | Markiermaschine und waferherstellungssystem |
KR20230120577A (ko) | 2022-02-09 | 2023-08-17 | 가부시기가이샤 디스코 | 요철 저감 방법 및 요철 저감 장치 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11251041B2 (en) * | 2018-08-02 | 2022-02-15 | Samsung Electronics Co., Ltd. | Substrate, integrated circuit device including the substrate, and method of manufacturing the integrated circuit device |
JP7128067B2 (ja) * | 2018-09-14 | 2022-08-30 | 株式会社ディスコ | ウエーハの生成方法およびレーザー加工装置 |
JP7210292B2 (ja) * | 2019-01-15 | 2023-01-23 | 株式会社ディスコ | ウエーハの生成方法 |
CN110834147A (zh) * | 2019-11-26 | 2020-02-25 | 深圳市牧激科技有限公司 | 激光加工控制方法、激光加工装置及计算机可读存储介质 |
JP7370879B2 (ja) * | 2020-01-22 | 2023-10-30 | 株式会社ディスコ | ウエーハ生成方法、及びウエーハ生成装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011211128A (ja) * | 2010-03-31 | 2011-10-20 | Casio Computer Co Ltd | 半導体装置の製造方法 |
JP2015062946A (ja) * | 2013-09-26 | 2015-04-09 | 株式会社フジクラ | 単結晶ウェハのマーキング方法 |
JP2015154075A (ja) * | 2014-02-11 | 2015-08-24 | サムスン エレクトロニクス カンパニー リミテッド | ウェハーの製造方法及びそれによって製造されたウェハー |
JP2015233031A (ja) * | 2014-06-09 | 2015-12-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2016197698A (ja) * | 2015-04-06 | 2016-11-24 | 株式会社ディスコ | ウエーハの生成方法 |
-
2017
- 2017-07-25 JP JP2017143841A patent/JP2019029382A/ja active Pending
-
2018
- 2018-07-19 US US16/039,626 patent/US20190030651A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011211128A (ja) * | 2010-03-31 | 2011-10-20 | Casio Computer Co Ltd | 半導体装置の製造方法 |
JP2015062946A (ja) * | 2013-09-26 | 2015-04-09 | 株式会社フジクラ | 単結晶ウェハのマーキング方法 |
JP2015154075A (ja) * | 2014-02-11 | 2015-08-24 | サムスン エレクトロニクス カンパニー リミテッド | ウェハーの製造方法及びそれによって製造されたウェハー |
JP2015233031A (ja) * | 2014-06-09 | 2015-12-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2016197698A (ja) * | 2015-04-06 | 2016-11-24 | 株式会社ディスコ | ウエーハの生成方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021203616A1 (de) | 2020-04-17 | 2021-10-21 | Disco Corporation | Waferherstellungsverfahren |
KR20210128908A (ko) | 2020-04-17 | 2021-10-27 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 |
DE102022206233A1 (de) | 2021-06-29 | 2022-12-29 | Disco Corporation | Markiermaschine und waferherstellungssystem |
KR20230002051A (ko) | 2021-06-29 | 2023-01-05 | 가부시기가이샤 디스코 | 마킹 장치 및 웨이퍼 생성 장치 |
KR20230120577A (ko) | 2022-02-09 | 2023-08-17 | 가부시기가이샤 디스코 | 요철 저감 방법 및 요철 저감 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20190030651A1 (en) | 2019-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6946153B2 (ja) | ウエーハの生成方法およびウエーハ生成装置 | |
JP2019029382A (ja) | ウエーハの生成方法およびウエーハ生成装置 | |
JP6904793B2 (ja) | ウエーハ生成装置 | |
TWI758505B (zh) | 晶圓生成裝置 | |
JP7009194B2 (ja) | ウエーハ生成装置および搬送トレー | |
JP7164396B2 (ja) | ウエーハ生成装置 | |
JP7073172B2 (ja) | ウエーハの生成方法 | |
JP2007235069A (ja) | ウェーハ加工方法 | |
KR20180063832A (ko) | SiC 웨이퍼의 생성 방법 | |
JP2007214457A (ja) | ウェーハ加工装置及び方法 | |
JP2007235068A (ja) | ウェーハ加工方法 | |
JP2019033134A (ja) | ウエーハ生成方法 | |
JP6865828B2 (ja) | 搬送装置、基板処理システム、搬送方法、および基板処理方法 | |
JP2017152442A (ja) | 加工方法 | |
JP2022090272A (ja) | ウエーハ生成装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200515 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210526 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210615 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210805 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210921 |