CN105103278B - 半导体装置、半导体装置的制造方法 - Google Patents

半导体装置、半导体装置的制造方法 Download PDF

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CN105103278B
CN105103278B CN201380075504.3A CN201380075504A CN105103278B CN 105103278 B CN105103278 B CN 105103278B CN 201380075504 A CN201380075504 A CN 201380075504A CN 105103278 B CN105103278 B CN 105103278B
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bonding agent
semiconductor device
cutting
chip
laser
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CN105103278A (zh
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吉田男
吉田一男
根岸将人
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明所涉及的半导体装置的特征在于，具备：安装基板；粘接剂，其涂敷于该安装基板；以及器件，其利用该粘接剂将下表面与该安装基板粘接，该器件的侧面上部与该器件的侧面下部相比表面粗糙度较小。

Description

半导体装置、半导体装置的制造方法
技术领域
本发明涉及一种将切割得到的器件利用粘接剂固定于安装基板的半导体装置以及该半导体装置的制造方法。
背景技术
将晶片等沿纵向及横向分割并切开为各个器件(芯片)的作业称为切割(dicing)。切割主要有3种方法。作为第1方法，有刀片切割的方法，该方法使称为金刚石刀片的极薄的圆形刃具高速旋转而对晶片进行分割。
作为第2方法，有划线折断的方法，该方法使用金刚石的角部对晶片形成刻痕，然后向晶片施加机械应力而对晶片进行分割。作为第3方法，有使用激光对晶片进行分割的激光切割的方法。激光切割是集中激光能量而使晶片材料的一部分升华、熔融或电离，由此将晶片分离为各个器件的方法。
专利文献1中公开了一种将激光切割和刀片切割相结合而得到的切割技术。该技术在沿着晶片的切割路径照射激光光线而形成加工槽之后，使用刀片沿着该加工槽对晶片进行切削。
专利文献1：日本特开2012－4478号公报
发明内容
激光切割与刀片切割以及划线折断相比具有高产量和高成品率。并且，激光切割与刀片切割相比能够缩小分割宽度(切割路径宽度)，因而能够增加器件获得数。
但是，如果利用激光切割对晶片等进行切割，则在器件的侧面形成熔融物。如果使器件下表面与粘接剂接触而进行芯片键合，则存在粘接剂沿着器件侧面的熔融物攀爬而到达器件上表面的问题。由此，存在器件上表面的电极焊盘被污染而使电极焊盘与导线之间的接合强度降低的问题。另外，在使用导电性的粘接剂的情况下，存在由于攀爬至器件上表面的粘接剂而引起电短路的问题。
另外，在专利文献1公开的技术中，利用刀片切割对几乎整个晶片进行切削，因而存在无法加快刀片的进给速度，无法提高生产率的问题。
本发明就是为了解决上述课题而提出的，其目的在于提供一种能够提高生产率并防止粘接剂的攀爬的半导体装置以及该半导体装置的制造方法。
本发明所涉及的半导体装置的特征在于，具备：安装基板；粘接剂，其涂敷于该安装基板；以及器件，其利用该粘接剂将下表面与该安装基板粘接，该器件的侧面上部与该器件的侧面下部相比表面粗糙度较小。
本发明所涉及的半导体装置的制造方法的特征在于，具备：激光切割工序，在该激光切割工序中，利用激光切割在晶片中形成贯穿孔，分离为各个器件；去除工序，在该去除工序中，利用刀片或蚀刻，将在该激光切割工序中在该器件的侧面处形成的熔融物去除；芯片键合工序，在该芯片键合工序中，在该去除工序后，利用粘接剂将安装基板与该器件的下表面进行粘接；以及粘接剂固化工序，在该粘接剂固化工序中，使该粘接剂固化。
发明的效果
根据本发明，能够提供一种能够提高生产率并防止粘接剂的攀爬的半导体装置。
附图说明
图1是表示本发明的实施方式1所涉及的半导体装置的剖视图。
图2是表示激光切割的状况的晶片剖视图。
图3是表示去除熔融物这一操作的剖视图。
图4是表示芯片键合工序的剖视图。
图5是将激光切割后的器件侧面的表面粗糙度Rz与刀片切割后的器件侧面的表面粗糙度Rz进行比较的照片。
图6是针对每种切割方式表示出器件侧面的表面粗糙度Rz和粘接剂攀爬至器件上表面所需的时间的表。
图7是表示本发明的实施方式2所涉及的半导体装置的剖视图。
图8是表示对晶片形成槽这一操作的晶片剖视图。
图9是表示激光切割的状况的晶片剖视图。
具体实施方式
参照附图，对本发明的实施方式所涉及的半导体装置和半导体装置的制造方法进行说明。对于相同或相对应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1
图1是表示本发明的实施方式1所涉及的半导体装置的剖视图。半导体装置10具备安装基板12。在安装基板12涂敷有粘接剂14。安装基板12与器件16的下表面利用粘接剂14而粘接。器件16例如由GaAs等化合物半导体形成。器件16的上表面成为形成有电极焊盘18的有源区域。
在器件16的侧面上部16A处形成有表面粗糙度Rz小于或等于1.0μm的切割痕。在器件16的侧面下部16B处形成有GaAs由于激光切割而熔融所形成的熔融物20。熔融物20是由激光切割产生的切割痕。熔融物20是具有微小裂纹的多孔质(porous)，因此器件16的侧面下部16B成为表面粗糙度Rz大于或等于4.0μm的粗糙面。
粘接剂14的一部分14a在表面粗糙度Rz大的侧面下部16B上攀爬。但是，粘接剂14的一部分14a未到达表面粗糙度Rz小的侧面上部16A。
对半导体装置10的制造方法进行说明。首先对晶片实施激光切割。图2是表示激光切割的状况的晶片剖视图。利用在激光器装置50内进行放大后放射的激光52，对晶片60进行切割。利用激光切割，沿着晶片60的切割路径形成贯穿孔54、56，分离为各个器件62、16、64。将该工序称为激光切割工序。此外，如众所周知的那样，在晶片60的下表面粘贴切割带70而实施激光切割工序。
在各器件的侧面形成有激光切割时产生的熔融物20A。贯穿孔54的宽度与其两侧的熔融物20A的宽度之和为x1。x1例如为10～20μm中的任一者。
接着，利用刀片去除在激光切割工序中形成于器件的侧面处的熔融物20A。将该工序称为去除工序。图3是表示去除熔融物这一操作的剖视图。将宽度为x1的刀片100沿着贯穿孔54向纸面外侧方向(或里侧方向)进给，将熔融物20A去除。由此，在侧面上部16A处形成由刀片100产生的切割痕，将侧面上部16A的表面粗糙度Rz设为小于或等于1.0μm。在此，不将熔融物20A全部去除，而是在侧面下部处留下熔融物20。
接着，在去除工序之后，利用粘接剂将安装基板与器件的下表面进行粘接。将该工序称为芯片键合工序。图4是表示芯片键合工序的剖视图。粘接剂14是具有导电性的Ag膏，但也可以由例如液状或膜状的材料形成。
接着，从芯片键合工序结束起经过一定“待机时间”后，使粘接剂固化。将该工序称为粘接剂固化工序。在粘接剂固化工序中，利用加热或UV照射使粘接剂14固化。此外，在粘接剂固化工序后，对电极焊盘18适当实施导线键合。
图5是将激光切割后的器件侧面的表面粗糙度Rz与刀片切割后的器件侧面的表面粗糙度Rz进行比较的照片。激光切割A～D中示出使用振荡频率不同的4种振荡器进行激光切割时的侧面状态和表面粗糙度。在激光切割中，器件侧面的表面粗糙度Rz变为4～12μm。
在刀片切割中，器件侧面的表面粗糙度Rz小于或等于1μm。因此，利用刀片切割形成的侧面上部16A的表面粗糙度Rz小于或等于1.0μm，利用激光切割形成的侧面下部16B的表面粗糙度Rz大于或等于4.0μm。
图6是针对每种切割方式表示出器件侧面的表面粗糙度Rz和粘接剂攀爬至器件上表面所需的时间的表。在激光切割的情况下，器件侧面的表面粗糙度Rz大，因而粘接剂攀爬至器件上表面所需的时间短。另一方面，在刀片切割或划线折断中，器件侧面的表面粗糙度Rz小，因而粘接剂攀爬至器件上表面所需的时间长。
根据本发明的实施方式1所涉及的半导体装置10，器件的侧面上部16A的表面粗糙度Rz变为小于或等于1.0μm。由此，即使延长从芯片键合工序结束至粘接剂固化工序的待机时间，也能够防止粘接剂14在器件侧面上攀爬并到达器件上表面。通过将待机时间设得较长，从而能够采用生产效率好的批量处理。
另外，由于减小了侧面上部16A的表面粗糙度Rz，因此即使粘接剂14的量大幅地波动，也能够防止粘接剂14到达器件上表面。如上述所示，由于能够利用侧面上部16A防止粘接剂14的攀爬，所以粘接剂14的选项增多。例如，能够采用高性能的导热粘接剂、能够提高接合强度的粘接剂、润湿性高的粘接剂、或者低粘性的粘接剂。
如果要利用刀片切割对晶片进行完全分割，则无法加快刀片的进给速度，无法提高生产率。但是，在本发明的实施方式1所涉及的半导体装置的制造方法中，首先利用能够进行高速切割的激光切割对晶片进行完全分割，然后利用刀片100将熔融物20A的一部分去除。由此，与利用刀片对晶片进行完全分割相比，能够以短时间结束切割，因而能够提高生产率。此外，仅将侧面上部的熔融物去除，是为了与将熔融物全体去除的情况相比使处理高速化，并且为了降低刀片的磨损量和刀片更换作业的频率。
另外，在刀片切割方式的情况下，所需的切割路径的宽度往往为50～100μm左右。但是，在本发明的激光切割中，能够将刀片的宽度x1设为10～20μm中的任一者，因而能够缩小切割路径的宽度而增加器件获得数。
侧面上部16A和侧面下部16B的表面粗糙度Rz并不限定于上述值。只要使用本发明的实施方式1所涉及的半导体装置的制造方法，使得侧面上部16A的表面粗糙度小于侧面下部16B的表面粗糙度，就能够防止粘接剂14的攀爬。
本发明的实施方式1所涉及的器件并不限定于GaAs，能够采用各种材料。例如，也可以由陶瓷形成器件。熔融物20利用刀片100去除，但也可以利用湿蚀刻或干蚀刻去除。在去除工序中，将器件的侧面上部的熔融物去除，但也可以将器件的侧面整体的熔融物去除。粘接剂只要能够将安装基板与器件粘接即可，并不限定于导电性的材料。此外，这些变形也能够应用于下面的实施方式2。
实施方式2
本发明的实施方式2所涉及的半导体装置和半导体装置的制造方法与实施方式1的共通点较多，因而以与实施方式1的不同点为中心进行说明。图7是表示本发明的实施方式2所涉及的半导体装置的剖视图。在该半导体装置中，利用粘接剂14将器件200的下表面固定于安装基板12。
器件200的侧面上部200A成为斜面。在侧面上部200A处形成有表面粗糙度Rz小于或等于1.0μm的切割痕。在侧面下部200B处形成有GaAs由于激光切割而熔融所形成的熔融物20。熔融物20是由激光切割产生的切割痕。因此，侧面下部200B成为表面粗糙度Rz大于或等于4.0μm的粗糙面。
对本发明的实施方式2所涉及的半导体装置的制造方法进行说明。首先对晶片形成槽。图8是表示对晶片形成槽这一操作的晶片剖视图。利用刀片100对晶片60形成槽102。槽102沿着切割路径形成。
接着，进行激光切割。图9是表示激光切割的状况的晶片剖视图。对于在俯视观察时形成有槽102的部分，以留下槽102的一部分的方式进行激光切割而形成贯穿孔201、202。由此，将晶片分离为各个器件200、204、206。将该工序称为激光切割工序。利用激光切割，在侧面下部200B处形成熔融物20。
接着，利用粘接剂14将安装基板12与器件200的下表面进行粘接。将该工序称为芯片键合工序。接着，经过待机时间后，转移至粘接剂固化工序。在粘接剂固化工序中，利用加热或UV照射使粘接剂14固化。接着，适当实施导线键合工序。
在本发明的实施方式2所涉及的半导体装置中，首先利用刀片100形成槽102，由此形成表面粗糙度小的侧面上部200A。接着，以留下侧面上部200A的方式，利用激光切割分离为各个器件。因此，能够降低侧面上部200A的表面粗糙度，因而能够防止粘接剂的攀爬。此外，也可以不利用刀片100形成槽102，而利用蚀刻来形成槽102。
标号的说明
10半导体装置，12安装基板，14粘接剂，14a粘接剂的一部分，16器件，16A侧面上部，16B侧面下部，18电极焊盘，20、20A熔融物，50激光装置，52激光，54、56贯穿孔，60晶片，70切割带，100刀片，102槽，200器件，200A侧面上部，200B侧面下部，201、202贯穿孔。

Claims (4)

1.一种半导体装置，其特征在于，
具备：
安装基板；
粘接剂，其涂敷于所述安装基板；以及
器件，其利用所述粘接剂将下表面与所述安装基板粘接，
所述器件的侧面上部与所述器件的侧面下部相比表面粗糙度较小，
所述侧面下部成为多孔质。
2.根据权利要求1所述的半导体装置，其特征在于，
在所述器件的侧面上部处形成有表面粗糙度Rz小于或等于1.0μm的切割痕，
在所述器件的侧面下部处形成有表面粗糙度Rz大于或等于4.0μm的切割痕。
3.一种半导体装置的制造方法，其特征在于，具备：
激光切割工序，在该激光切割工序中，利用激光切割在晶片中形成贯穿孔，分离为各个器件；
去除工序，在该去除工序中，利用刀片或蚀刻，仅将在所述激光切割工序中在所述器件的侧面整体形成的熔融物之中的、所述器件的侧面上部的所述熔融物去除；
芯片键合工序，在该芯片键合工序中，在所述去除工序后，利用粘接剂将安装基板与所述器件的下表面进行粘接；以及
粘接剂固化工序，在该粘接剂固化工序中，使所述粘接剂固化。
4.根据权利要求3所述的半导体装置的制造方法，其特征在于，
在所述去除工序中，仅将在所述器件的侧面上部处形成的熔融物去除。
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