JP6183556B2 - 冷却器一体型半導体モジュール - Google Patents
冷却器一体型半導体モジュール Download PDFInfo
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- JP6183556B2 JP6183556B2 JP2016529166A JP2016529166A JP6183556B2 JP 6183556 B2 JP6183556 B2 JP 6183556B2 JP 2016529166 A JP2016529166 A JP 2016529166A JP 2016529166 A JP2016529166 A JP 2016529166A JP 6183556 B2 JP6183556 B2 JP 6183556B2
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- 239000004065 semiconductor Substances 0.000 title claims description 105
- 229910000679 solder Inorganic materials 0.000 claims description 46
- 229920005989 resin Polymers 0.000 claims description 40
- 239000011347 resin Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 238000007747 plating Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 32
- 238000007789 sealing Methods 0.000 claims description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 238000005304 joining Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000013532 laser treatment Methods 0.000 claims description 2
- 238000001721 transfer moulding Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 76
- 230000017525 heat dissipation Effects 0.000 description 13
- 230000008646 thermal stress Effects 0.000 description 8
- 239000004033 plastic Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000004519 grease Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910006913 SnSb Inorganic materials 0.000 description 2
- 229910006907 SnSbAg Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Description
一方、特許文献3に記載された半導体モジュールでは、半導体素子と冷却板との間に、めっき領域と粗面化領域が形成された金属ブロックを介在させていることから、封止樹脂が半導体素子、金属ブロック、はんだ、冷却板と直に接する構造であって、コンパクトな構造とは言えないばかりか、様々な界面において接着性を確保しなければならないという問題がある。
を備えることを特徴とする。
図1には、実施例の計算に用いた、冷却器一体型半導体モジュール100の断面が示されている。半導体モジュール11の絶縁配線基板1は、厚さ0.32mmの窒化ケイ素を主成分とするセラミックス製の絶縁基板6と、絶縁基板6の一方の主面に配置された厚さ0.4mmの銅合金からなる回路層5と、絶縁基板6の他方の主面に配置された厚さ0.4mmの銅合金からなる金属層7とを備える。回路層5の上には1個のIGBT構造の半導体素子3がSnSb系はんだ層4によって接合されている。絶縁配線基板1と半導体素子3を被覆する封止樹脂2は、エポキシ樹脂のインサート成型によって形成されている。そして、半導体モジュール11の裏面の全面には、厚さ5μmのニッケルめっき層10が配置されている。一方、冷却器9は、アルミニウム合金(A6063)の押し出し成型にて形成される厚さ1mmの外殻と、厚さ0.8mmのフィンを備える。半導体モジュール11は、厚さ0.25mmのSn8%Sb3%Agはんだ層8を介して、冷却器9に接続されている。金属組成比率は、質量パーセントで表している。すなわち、Snを89%、Sbを8%、Agを3%含む。ただし、各組成比率には、はんだの生産工程における不可避的な微量の不純物を含んでもよい。
図2には、比較例の計算に用いた、冷却器一体型半導体モジュール200の断面が示されている。半導体モジュール20の裏面にはニッケルめっき層10が形成されておらず、はんだ層18の周辺領域では、封止樹脂2の下面と冷却器9との間に隙間ができている。ただし、それ以外の構成は実施例と同じである。
熱応力シミュレーションでは、半導体モジュール全体の温度を−40℃から105℃まで変化させた時に、はんだ層8に発生する塑性ひずみ振幅(%)を計算し、計算結果を図3に示した。
ΔεpNfb=C ・・・(1)
(Δεp:塑性ひずみ振幅、Nf:疲労寿命、b、C:材料による定数)
2:封止樹脂
3:半導体素子
4:はんだ層
5:回路層
6:絶縁基板、セラミックス基板
7:金属層
8,18:はんだ層
9:冷却器、フィンベース
9a:フィン
9b:冷媒流路
10:めっき層
11,20:半導体モジュール
100,200:冷却器一体型半導体モジュール
Claims (6)
- 絶縁基板と、
前記絶縁基板のおもて面に設けられた回路層と、
前記回路層と電気的に接続された半導体素子と、
前記絶縁基板の裏面に設けられた金属層と、
前記絶縁基板、前記回路層、前記半導体素子、および前記金属層の一部を覆う封止樹脂と、
前記金属層の下面側に配置された冷却器と、
少なくとも前記封止樹脂の前記冷却器と対向する面に配置されためっき層と、
前記めっき層と前記冷却器とを接続する接合部材と、
を備えることを特徴とする冷却器一体型半導体モジュール。 - 請求項1に記載の冷却器一体型半導体モジュールにおいて、
前記封止樹脂の前記めっき層との界面の粗さは、算術平均粗さ5μm以上であることを特徴とする冷却器一体型半導体モジュール。 - 請求項2に記載の冷却器一体型半導体モジュールにおいて、
少なくとも前記封止樹脂の前記冷却器と対向する面が、化学的エッチング、機械的切削、サンドブラスト法、レーザ処理から選ばれるいずれかの方法で粗面化された面、または、トランスファーモールド用金型に予め形成された粗面により成形された面であることを特徴とする冷却器一体型半導体モジュール。 - 請求項1に記載の冷却器一体型半導体モジュールにおいて、
前記接合部材の厚さは、250μm以下であることを特徴とする冷却器一体型半導体モジュール。 - 請求項1に記載の冷却器一体型半導体モジュールにおいて、
前記接合部材は、Sn8%Sb3%Ag組成のはんだであることを特徴とする冷却器一体型半導体モジュール。 - 請求項1に記載の冷却器一体型半導体モジュールにおいて、
前記めっき層は、1μm以上5μm以下の厚さであって、銅、ニッケル、金、銀から選択される少なくとも1種類以上の金属を含有することを特徴とする冷却器一体型半導体モジュール。
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